Vishay Siliconix IRFRC20TRPBF-BE3
- Part No.:
- IRFRC20TRPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFRC20TRPBF-BE3.pdf
- Description:
- MOSFET N-CH 600V 2A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:3,935
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Product details
Overview
IRFRC20TRPBF-BE3 from Vishay Siliconix is a 600 V, 2.0 A N-channel surface-mount power MOSFET in DPAK (TO-252) package with 4.4 Ω RDS(on) at VGS = 10 V, 18 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, offline SMPS primary switches, and industrial motor control.
For engineers reviewing the IRFRC20TRPBF-BE3 datasheet, IRFRC20TRPBF-BE3 pinout, IRFRC20TRPBF-BE3 application, or IRFRC20TRPBF-BE3 equivalent, this page delivers verified electrical specs, thermal derating data, body diode recovery characteristics, and direct-mount PCB layout guidance per Vishay's recommended DPAK pad dimensions.
Technical Context
This third-generation power MOSFET employs planar V-groove technology optimized for rugged unclamped inductive switching, with 74 mJ single-pulse avalanche energy and 4.2 mJ repetitive avalanche capability. Its dynamic dV/dt rating of 3.0 V/ns supports reliable operation in fast-switching topologies without spurious turn-on.
The device features low gate charge (Qg = 18 nC, Qgd = 8.9 nC) and fast switching times (td(on) = 10 ns, tf = 25 ns), enabling high-frequency operation up to 250 kHz in hard-switched converters while maintaining low conduction and switching losses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Supports 400 V AC input rectified systems with 50% safety margin |
| RDS(on) | 4.4 Ω @ VGS = 10 V - Enables ≤2.0 A continuous drain current at TC = 25 °C with <10 W conduction loss |
| Qg | 18 nC - Reduces gate drive power requirement and enables use with low-current drivers (e.g., 100 mA peak) |
| EAS | 74 mJ - Withstands unclamped inductive energy in flyback or forward converter snubberless designs |
| RthJC | 3.0 °C/W - Allows direct heatsink mounting for thermal management in high-power density layouts |
| VSD | 1.6 V @ IS = 2.0 A - Defines forward voltage drop of integrated body diode during synchronous rectification or freewheeling |
| trr | 290–580 ns - Critical for minimizing reverse recovery loss in quasi-resonant and LLC topologies |
Pinout & Package
DPAK (TO-252) package with exposed drain tab for thermal conduction and mechanical anchoring; compatible with vapor-phase, infrared, and wave soldering per JEDEC standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal requiring ≤±20 V drive; low input capacitance (Ciss = 350 pF) minimizes Miller effect |
| Pin 2 (D) | Drain | Main high-side switching node; electrically connected to exposed metal tab for heatsinking |
| Pin 3 (S) | Source | Power return path and gate reference; internal source inductance (LS = 7.5 nH) affects switching ringing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 2.0 A repetitive avalanche current and 4.2 mJ energy-enables robust operation in overvoltage fault conditions without external clamping |
| Dynamic dV/dt rating | 3.0 V/ns immunity prevents false turn-on during high dv/dt transients in bridge-leg configurations |
| Fast switching | 10 ns turn-on delay + 25 ns fall time enables >200 kHz operation with minimal overlap loss |
| Surface-mount (DPAK) | Optimized for automated assembly and thermal performance on FR-4 PCBs with 1"² copper area (RthJA = 50 °C/W) |
| Low Qgd/Qg ratio | 8.9/18 = 0.49 - Improves hard-switching efficiency by reducing Miller plateau duration |
Applications
| AC-DC Power Supplies | Industrial Motor Drives |
|---|---|
Use Scenario: Primary-side switch in 30–60 W offline flyback converters with universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer; operates at 65–130 kHz with zero-voltage switching assist. Use Value: 600 V rating accommodates reflected output voltage plus leakage spike; 74 mJ EAS eliminates need for RCD clamp in cost-sensitive designs. | Use Scenario: Half-bridge high-side switch in 100–500 W BLDC motor controllers for HVAC blowers and pumps. IC Role / Device Role / Timing Role: Fast-turning power stage component handling PWM commutation at 10–20 kHz with dead-time control. Use Value: Low Qg and fast tf reduce switching loss; ruggedized avalanche design withstands inductive kickback during phase reversal. |
| LED Driver Circuits | Telecom DC-DC Converters |
Use Scenario: Constant-current buck controller for outdoor LED street lighting operating from 300–400 V DC bus. IC Role / Device Role / Timing Role: Main power switch regulating LED string current via high-frequency PWM dimming (1–10 kHz). Use Value: 4.4 Ω RDS(on) limits conduction loss at 1.5 A load; body diode trr < 600 ns ensures clean freewheeling without voltage overshoot. | Use Scenario: Isolated forward converter primary switch in 48 V telecom rectifier modules delivering 200 W output. IC Role / Device Role / Timing Role: Hard-switched main transistor operating at 250 kHz with active clamp reset. Use Value: 3.0 °C/W RthJC allows direct heatsink attachment; 18 nC Qg enables efficient gate driving with UCC3895-type controllers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK60ZFP | 600 V, 5.5 Ω RDS(on), 22 nC Qg, TO-220FP package | Through-hole mounting only; higher RDS(on) increases conduction loss at 2 A | Prefer when board space permits through-hole and higher thermal mass is needed |
| IXTP1R6N60P | 600 V, 1.6 Ω RDS(on), 24 nC Qg, TO-220 package | Lower on-resistance but larger footprint and no surface-mount option | Choose when lower conduction loss outweighs PCB area and assembly constraints |
Compared with STP6NK60ZFP and IXTP1R6N60P, IRFRC20TRPBF-BE3 offers the only DPAK-compatible 600 V solution with sub-5 Ω RDS(on) and verified avalanche capability-making it optimal for compact, automated, high-reliability industrial power stages where thermal interface and layout density are critical.
Availability
IRFRC20TRPBF-BE3 is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor drives, and LED driver circuits requiring stable component supply across production lifecycles.
Supply support for IRFRC20TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFRC20 series belongs to Vishay's third-generation high-voltage power MOSFET family engineered for ruggedness in unclamped inductive switching, targeting cost-sensitive yet reliability-critical offline power conversion applications.
FAQ
What is the maximum continuous drain current rating for IRFRC20TRPBF-BE3 at 100 °C case temperature?
The IRFRC20TRPBF-BE3 has a continuous drain current rating of 1.3 A at TC = 100 °C, derived from its 2.0 A rating at 25 °C and linear derating factor of 0.33 W/°C. This value assumes proper PCB copper area (1"² FR-4) and thermal interface to heatsink. Exceeding this current without additional cooling risks junction temperature exceeding 150 °C.
Does IRFRC20TRPBF-BE3 support gate drive voltages below 10 V?
Yes, IRFRC20TRPBF-BE3 has a gate threshold voltage (VGS(th)) range of 2.0–4.0 V, allowing partial enhancement at 5 V. However, full enhancement and specified RDS(on) = 4.4 Ω require VGS ≥ 10 V. Driving below 8 V increases on-resistance significantly and degrades switching speed and avalanche robustness.
What is the thermal resistance from junction to ambient for IRFRC20TRPBF-BE3 in standard PCB mount?
When mounted on a 1" square FR-4 PCB, the IRFRC20TRPBF-BE3 exhibits a maximum junction-to-ambient thermal resistance (RthJA) of 50 °C/W. This value assumes no external heatsink and is critical for calculating worst-case junction temperature under steady-state power dissipation.
Can IRFRC20TRPBF-BE3 be used in avalanche mode repeatedly?
Yes, IRFRC20TRPBF-BE3 is explicitly rated for repetitive avalanche operation with IAR = 2.0 A and EAR = 4.2 mJ per pulse. This capability is validated per test condition: VDD = 50 V, starting TJ = 25 °C, L = 37 mH, Rg = 25 Ω. Pulse width must remain within limits defined by maximum junction temperature (see Figure 11).
What are the recommended PCB pad dimensions for IRFRC20TRPBF-BE3 DPAK package?
Vishay recommends minimum PCB pads per Application Note 826: 0.224" × 0.180" (5.69 mm × 4.57 mm) for source, 0.243" × 0.087" (6.18 mm × 2.20 mm) for gate, and 0.420" × 0.055" (10.67 mm × 1.40 mm) for drain tab. A 1"² copper pour under the drain tab reduces RthJA to 50 °C/W and improves power handling.
IRFRC20TRPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.4Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFRC20TRPBF-BE3 FAQ
1.How can I place an order for IRFRC20TRPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFRC20TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFRC20TRPBF-BE3 reliable?
The price and inventory of IRFRC20TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFRC20TRPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFRC20TRPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFRC20TRPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFRC20TRPBF-BE3?
IRFRC20TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFRC20TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFRC20TRPBF-BE3?
For technical support, including IRFRC20TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFRC20TRPBF-BE3 requirements.
6.How does Aetrix verify that IRFRC20TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFRC20TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFRC20TRPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFRC20TRPBF-BE3?
All IRFRC20TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFRC20TRPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFRC20TRPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFRC20TRPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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