Vishay Siliconix IRFRC20TRRPBF
- Part No.:
- IRFRC20TRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFRC20TRRPBF.pdf
- Description:
- MOSFET N-CH 600V 2A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:8,382
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Product details
Overview
IRFRC20TRRPBF from Vishay Siliconix is a 600 V, 2.0 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 4.4 Ω RDS(on) at VGS = 10 V, 18 nC total gate charge, and repetitive avalanche rating up to 2.0 A - designed for high-voltage DC-DC converters, offline SMPS auxiliary supplies, and industrial motor control snubbers.
For engineers reviewing the IRFRC20TRRPBF datasheet, IRFRC20TRRPBF pinout, IRFRC20TRRPBF application, or IRFRC20TRRPBF equivalent, this page delivers verified package mapping, validated thermal derating curves, confirmed diode recovery characteristics (trr = 290–580 ns), and real-world SOA boundary data per Fig. 7 of Vishay S26-0614-Rev. G.
Technical Context
This third-generation planar MOSFET uses ruggedized silicon design optimized for unclamped inductive switching, with specified single-pulse avalanche energy (EAS = 74 mJ) and linear derating factor of 0.33 W/°C at TC = 25 °C. Its body diode supports 2.0 A continuous source-drain current and exhibits VSD = 1.6 V at IS = 2.0 A, TJ = 25 °C.
The device operates across -55 °C to +150 °C junction temperature range, with maximum dV/dt capability of 3.0 V/ns and gate threshold voltage (VGS(th)) tightly specified between 2.0 V and 4.0 V. Thermal resistance from junction-to-case is 3.0 °C/W, enabling high-power-density PCB mount designs when paired with appropriate copper area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports primary-side switching in 400 V DC bus and universal AC input offline topologies |
| RDS(on) | 4.4 Ω @ VGS = 10 V - defines conduction loss in low-current auxiliary rails (e.g., <2 A bias supplies) |
| Qg | 18 nC - determines gate drive power requirement and switching speed in hard-switched applications |
| ID (TC = 25 °C) | 2.0 A - usable continuous drain current under heatsink-cooled conditions |
| EAS | 74 mJ - quantifies energy-handling capability during unclamped inductive turn-off events |
| trr | 290–580 ns - critical for minimizing reverse recovery losses in flyback snubber and synchronous rectifier circuits |
| RthJC | 3.0 °C/W - enables thermal modeling of junction temperature rise above case in layout-constrained designs |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad on bottom side for thermal conduction; standard 3-pin configuration with gull-wing leads compatible with vapor-phase and infrared reflow.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal requiring ≤ ±20 V drive; 100 nA leakage ensures low standby power |
| D | Drain | Main high-voltage power terminal; electrically connected to exposed thermal pad for heat dissipation |
| S | Source | Power return and reference node; forms integral body diode anode with drain |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 2.0 A repetitive avalanche current (IAR) without degradation - essential for robustness in inductive load switching |
| Dynamic dV/dt rating | 3.0 V/ns immunity prevents false turn-on in high-noise high-voltage environments like motor drives |
| Fast switching | Turn-on delay 10 ns, rise time 23 ns, fall time 25 ns - reduces switching losses in 50–500 kHz SMPS |
| Surface-mount (DPAK) | Enables automated assembly and compact board layout; thermal pad allows direct PCB copper connection |
| Low Qgd/Qg ratio | Qgd = 8.9 nC / Qg = 18 nC → ~49% - improves Miller immunity and hard-switching stability |
Applications
| Offline Auxiliary Power Supply | Industrial Motor Control Snubber |
|---|---|
Use Scenario: Providing isolated 12–24 V bias supply for gate drivers in 3-phase inverters using 400–690 V DC bus. IC Role / Device Role / Timing Role: High-voltage N-channel switch in flyback or RCD-clamp topology operating at 65–130 kHz. Use Value: 600 V rating withstands reflected transients; 2.0 A current supports >15 W output; avalanche rating absorbs clamp energy. | Use Scenario: Suppressing voltage spikes across IGBTs during turn-off in variable-frequency drives. IC Role / Device Role / Timing Role: Passive snubber switch absorbing inductive energy during IGBT commutation. Use Value: 74 mJ EAS handles typical snubber energy; fast trr minimizes recovery oscillation; DPAK fits tight heatsink spacing. |
| High-Voltage DC-DC Converter | LED Driver Primary Switch |
Use Scenario: Step-down conversion from 375 V DC (PFC output) to 24 V for industrial sensors and PLC modules. IC Role / Device Role / Timing Role: Primary-side MOSFET in non-isolated buck or buck-boost regulator. Use Value: 4.4 Ω RDS(on) limits conduction loss at 1–2 A loads; 3.0 °C/W RthJC enables thermal management on 1"² FR-4. | Use Scenario: Constant-current switching element in high-bay LED driver with 277 V AC input. IC Role / Device Role / Timing Role: Main switching transistor in primary-side controlled flyback LED driver. Use Value: Repetitive avalanche rating protects against LED string open-circuit transients; 600 V VDS covers peak line voltage + margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK60ZFP | 600 V, 6 A, RDS(on) = 1.2 Ω, TO-220FP package, Zener-protected gate | Higher current rating but through-hole only; lacks surface-mount compatibility and same thermal pad structure | Select when higher current headroom and gate protection are prioritized over SMT assembly and compact footprint. |
| IXTP2N60P | 600 V, 2.0 A, RDS(on) = 5.5 Ω, TO-220 package, no avalanche rating | No repetitive avalanche specification; higher RDS(on); through-hole mounting only | Choose only for cost-sensitive non-avalanche-critical applications where DPAK footprint is not required. |
Compared with STP6NK60ZFP and IXTP2N60P, IRFRC20TRRPBF uniquely combines DPAK surface-mount form factor, verified repetitive avalanche capability (IAR = 2.0 A), and 4.4 Ω on-resistance - making it optimal for space-constrained, reliability-critical auxiliary and snubber circuits where PCB real estate and transient robustness are paramount.
Availability
IRFRC20TRRPBF is available at Aetrix Electronics and suitable for offline auxiliary power supplies, industrial motor control snubbers, and high-voltage DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing from Vishay-authorized channels.
Supply support for IRFRC20TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFRC20 series belongs to Vishay's third-generation high-voltage power MOSFET product line, engineered specifically for ruggedized switching in offline power conversion, snubber networks, and auxiliary bias generation where avalanche tolerance and surface-mount integration are mandatory.
FAQ
What is the maximum junction temperature for IRFRC20TRRPBF?
The IRFRC20TRRPBF has an operating junction and storage temperature range of -55 °C to +150 °C. This maximum junction temperature of +150 °C is used to define its safe operating area and thermal derating behavior, especially under repetitive avalanche conditions where pulse width is limited by junction temperature rise as shown in Figure 11 of Vishay document S26-0614-Rev. G.
Does IRFRC20TRRPBF have a specified body diode reverse recovery time?
Yes, IRFRC20TRRPBF specifies body diode reverse recovery time (trr) as 290–580 ns at TJ = 25 °C, IF = 2.0 A, and dI/dt = 100 A/μs. This parameter is critical for evaluating performance in flyback snubbers and synchronous rectification circuits where diode recovery losses impact efficiency and EMI.
Is IRFRC20TRRPBF lead-free and halogen-free?
Yes, IRFRC20TRRPBF is lead-free and halogen-free, conforming to RoHS Directive 2011/65/EU and Vishay's material categorization per document 99912. The "-TRR" suffix denotes tape-and-reel packaging, and "PbF" explicitly indicates lead-free termination; full compliance documentation is available via Vishay's website under document number 91285.
What is the gate threshold voltage range for IRFRC20TRRPBF?
The gate-source threshold voltage (VGS(th)) for IRFRC20TRRPBF is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while maintaining noise immunity against spurious gate excitation in high-dV/dt environments.
Can IRFRC20TRRPBF be used in avalanche mode repeatedly?
Yes, IRFRC20TRRPBF is explicitly rated for repetitive avalanche operation with IAR = 2.0 A and EAR = 4.2 mJ, as defined in the Absolute Maximum Ratings table. Pulse width is limited by maximum junction temperature, and proper thermal design - including PCB copper area per Application Note 826 - is required to sustain repetitive operation without degradation.
IRFRC20TRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.4Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFRC20TRRPBF FAQ
1.How can I place an order for IRFRC20TRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFRC20TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFRC20TRRPBF reliable?
The price and inventory of IRFRC20TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFRC20TRRPBF is usually 5 days.
3.What payment methods are accepted for IRFRC20TRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFRC20TRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFRC20TRRPBF?
IRFRC20TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFRC20TRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFRC20TRRPBF?
For technical support, including IRFRC20TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFRC20TRRPBF requirements.
6.How does Aetrix verify that IRFRC20TRRPBF is sourced from the original manufacturer or authorized distributors?
All IRFRC20TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFRC20TRRPBF meets industry standards.
7.What is the process for return or replacement of IRFRC20TRRPBF?
All IRFRC20TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFRC20TRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFRC20TRRPBF part is unused and in its original packaging.
Return procedure for IRFRC20TRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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