Vishay Siliconix IRFS11N50A

Overview

IRFS11N50A from Vishay Siliconix is a 500 V, 11 A N-channel power MOSFET in D2PAK (TO-263) package, with R_DS(on) = 0.52 Ω at V_GS = 10 V, Q_g = 52 nC, and rated for repetitive avalanche energy of 17 mJ - designed for high-speed switching in SMPS half-bridge and PFC boost topologies.

For engineers reviewing the IRFS11N50A datasheet, IRFS11N50A pinout, IRFS11N50A application, or IRFS11N50A equivalent, this part supports critical design decisions in uninterruptible power supplies, two-transistor forward converters, and industrial DC-DC stages where ruggedness against dV/dt stress and unclamped inductive switching is required.

Technical Context

This MOSFET employs planar V-groove silicon technology optimized for high-voltage blocking and controlled dynamic performance. Its gate charge profile (Q_gs = 13 nC, Q_gd = 18 nC) enables predictable turn-on/turn-off timing under 9.1 Ω gate resistance, with t_r = 35 ns and t_f = 28 ns at V_DD = 250 V and I_D = 11 A.

The device integrates a fully characterized body diode with t_rr = 510–770 ns, Q_rr = 3.4–5.1 μC, and peak dV/dt immunity of 6.9 V/ns - validated under ISD ≤ 11 A, dI/dt ≤ 140 A/μs, and T_J ≤ 150 °C conditions per Figure 12 test setup.

Key Specifications

Pinout & Package

D2PAK (TO-263) package with exposed drain pad on underside for thermal and electrical connection; 3-terminal surface-mount configuration with G–D–S pin order as viewed from top side with marking dot in upper-left corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Compared with STP12NK50ZFP and IXTH12N50L, the IRFS11N50A offers surface-mount D2PAK packaging with direct thermal path to PCB, making it optimal for compact, high-power-density SMPS where automated assembly and thermal management via copper pour are prioritized.

Availability

IRFS11N50A is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and high-speed industrial power switching requiring stable component supply and long-term lifecycle support.

Supply support for IRFS11N50A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFS11N50A belongs to Vishay's high-voltage power MOSFET product line engineered for demanding industrial and telecom power conversion applications where avalanche capability, dV/dt immunity, and repeatable switching behavior are mandatory.

FAQ

What is the maximum continuous drain current for IRFS11N50A at 100 °C case temperature?

The IRFS11N50A supports 7.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to junction-to-case thermal resistance of 0.75 °C/W and ensures safe operation within the 150 °C maximum junction temperature limit when properly heatsinked. The IRFS11N50A must be mounted on a thermally adequate PCB copper area to maintain this rating.

Does IRFS11N50A have a fully characterized body diode, and what are its key recovery parameters?

Yes, the IRFS11N50A features a fully characterized intrinsic body diode with t_rr = 510–770 ns and Q_rr = 3.4–5.1 μC at T_J = 25 °C, I_F = 11 A, and dI/dt = 100 A/μs. These values are measured per standard JEDEC test conditions and enable precise dead-time selection in half-bridge configurations. The IRFS11N50A body diode voltage is specified at 1.5 V for I_S = 11 A and V_GS = 0 V.

Can IRFS11N50A be used in avalanche-mode operation, and what are its rated limits?

Yes, the IRFS11N50A is rated for both single-pulse (E_AS = 275 mJ) and repetitive avalanche (I_AR = 11 A, E_AR = 17 mJ) operation. Repetitive ratings assume pulse width limited by maximum junction temperature and are validated per Figure 12 test circuit with L = 4.5 mH and R_g = 25 Ω. The IRFS11N50A avalanche performance is guaranteed across its full temperature range and does not require external clamping in properly designed hard-switched topologies.

What is the gate threshold voltage range for IRFS11N50A, and how does it affect drive requirements?

The IRFS11N50A has a gate threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V at I_D = 250 μA, confirming it is a standard-level MOSFET requiring ≥10 V gate drive for full enhancement. This ensures low R_DS(on) (0.52 Ω) and avoids partial turn-on losses. The IRFS11N50A is not a logic-level device, so 3.3 V or 5 V microcontroller outputs cannot directly drive it without level-shifting or buffering.

What package type is used for IRFS11N50A, and what are its thermal mounting requirements?

The IRFS11N50A uses the D2PAK (TO-263) surface-mount package with an exposed drain pad that serves as both electrical connection and primary thermal path. To achieve the specified R_thJC = 0.75 °C/W, the drain pad must be soldered to a minimum 16.1 mm × 10.7 mm copper area (per AN826 recommended pads) with ≥2 oz copper thickness and thermal vias to inner ground planes. The IRFS11N50A thermal performance degrades significantly if the drain pad is left floating or insufficiently plated.