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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFS11N50APBF

Name: IRFS11N50APBF
Brand: Vishay Siliconix
SKU: IRFS11N50APBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS11N50APBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS11N50APBF.pdf

Description:: MOSFET N-CH 500V 11A D2PAK

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Product details

Overview

IRFS11N50APBF from Vishay Siliconix is a 500 V, 11 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.52 Ω R_DS(on) at V_GS = 10 V, 52 nC total gate charge, and 275 mJ single-pulse avalanche energy - designed for high-voltage switching in SMPS and UPS systems.

For engineers reviewing the IRFS11N50APBF datasheet, IRFS11N50APBF pinout, IRFS11N50APBF application, or IRFS11N50APBF equivalent, this device's rugged dV/dt capability (6.9 V/ns), characterized C_oss (55 pF at 400 V), and body diode recovery time (510–770 ns) are critical for hard-switched bridge topologies and PFC stages.

Technical Context

This MOSFET employs planar vertical DMOS technology optimized for high-voltage unclamped inductive switching. Its gate threshold voltage (2.0–4.0 V) ensures stable turn-on under wide temperature ranges, while the specified effective output capacitance (C_{oss eff.} = 97 pF) enables accurate snubber and timing calculations in resonant converters.

The device integrates a robust intrinsic body diode with 11 A continuous source-drain current rating and controlled reverse recovery (Q_rr = 3.4–5.1 μC), supporting synchronous rectification and bidirectional energy transfer in two-transistor forward and half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports DC bus voltages up to 400 V in boost PFC and offline SMPS with margin.
R_DS(on)	0.52 Ω @ V_GS = 10 V - determines conduction loss in high-current primary-side switches.
Q_g	52 nC - defines gate drive power requirement and switching speed in 100–500 kHz applications.
E_AS	275 mJ - enables reliable operation under unclamped inductive load transients without external clamping.
C_{oss eff.}	97 pF - models actual capacitive turn-off delay across 0–400 V, critical for ZVS design.
t_rr	510–770 ns - sets minimum dead-time requirements to avoid shoot-through in bridge legs.
R_thJC	0.75 °C/W - allows thermal design of heatsink interface for 170 W continuous dissipation at T_C = 25 °C.

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated drain tab (pin 2), standard 3-pin layout, and thermal pad on underside for PCB copper pour attachment.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal requiring ≤ ±30 V drive; low Q_gs/Q_gd ratio (13/18 nC) enables fast, low-loss switching.
Pin 2 (D)	Drain	High-voltage power terminal connected to internal die backside; electrically tied to exposed metal tab for thermal conduction.
Pin 3 (S)	Source	Power return and gate reference node; forms common connection point for gate driver ground and current sensing.

Key Features

Feature	Design Value
Low Q_g (52 nC)	Reduces gate driver IC stress and enables use of low-power isolated drivers in space-constrained designs.
Characterized C_oss & C_{oss eff.}	Enables precise modeling of turn-off losses and snubber sizing without iterative testing.
Avalanche-rated (E_AS = 275 mJ)	Eliminates need for external RCD clamp circuits in flyback or forward converters with leakage inductance.
Peak dV/dt immunity (6.9 V/ns)	Prevents false turn-on during high-slew-rate switching events in half/full-bridge topologies.
Body diode Q_rr (3.4–5.1 μC)	Supports soft-recovery behavior in synchronous rectification and bidirectional DC-DC stages.

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in 500 W two-transistor forward converter operating at 100 kHz. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from DC bus to transformer primary. Use Value: 500 V V_DS rating and 275 mJ E_AS withstand leakage spike energy without failure during transient overload.	Use Scenario: Inverter stage H-bridge switch in online double-conversion UPS delivering 1 kVA output. IC Role / Device Role / Timing Role: Fast-turning N-channel switch enabling efficient 50/60 Hz AC synthesis with minimal dead-time distortion. Use Value: 510–770 ns t_rr and controlled Q_rr allow tight dead-time control (< 200 ns) to prevent cross-conduction while maintaining low THD.
Power Factor Correction Boost	High-Speed Industrial Motor Drive
Use Scenario: Boost switch in active PFC front-end for industrial AC-DC power supply (230 VAC input). IC Role / Device Role / Timing Role: High-frequency (65–135 kHz) switching element shaping input current waveform to match voltage phase. Use Value: 0.52 Ω R_DS(on) minimizes conduction loss at peak line current (≥15 A), while 52 nC Q_g enables efficient gate drive at full frequency range.	Use Scenario: Half-bridge leg in 3 kW servo drive inverter module controlling permanent magnet motor. IC Role / Device Role / Timing Role: High-reliability power switch handling repetitive 44 A pulsed currents during acceleration/deceleration cycles. Use Value: 44 A I_DM rating and 7.0 A continuous current at T_C = 100 °C support high-torque intermittent loads without derating.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in 500 W two-transistor forward converter operating at 100 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from DC bus to transformer primary.

Use Value: 500 V V_DS rating and 275 mJ E_AS withstand leakage spike energy without failure during transient overload.

Use Scenario: Inverter stage H-bridge switch in online double-conversion UPS delivering 1 kVA output.

IC Role / Device Role / Timing Role: Fast-turning N-channel switch enabling efficient 50/60 Hz AC synthesis with minimal dead-time distortion.

Use Value: 510–770 ns t_rr and controlled Q_rr allow tight dead-time control (< 200 ns) to prevent cross-conduction while maintaining low THD.

Power Factor Correction Boost

High-Speed Industrial Motor Drive

Use Scenario: Boost switch in active PFC front-end for industrial AC-DC power supply (230 VAC input).

IC Role / Device Role / Timing Role: High-frequency (65–135 kHz) switching element shaping input current waveform to match voltage phase.

Use Value: 0.52 Ω R_DS(on) minimizes conduction loss at peak line current (≥15 A), while 52 nC Q_g enables efficient gate drive at full frequency range.

Use Scenario: Half-bridge leg in 3 kW servo drive inverter module controlling permanent magnet motor.

IC Role / Device Role / Timing Role: High-reliability power switch handling repetitive 44 A pulsed currents during acceleration/deceleration cycles.

Use Value: 44 A I_DM rating and 7.0 A continuous current at T_C = 100 °C support high-torque intermittent loads without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP11NM50N	R_DS(on) = 0.53 Ω, Q_g = 45 nC, E_AS = 220 mJ, TO-220 package	Lacks D2PAK thermal performance; lower avalanche energy limits unclamped inductive robustness	Preferred where cost-sensitive TO-220 mounting is acceptable and avalanche margin is secondary
IXTH11N50L	R_DS(on) = 0.55 Ω, Q_g = 48 nC, E_AS = 300 mJ, TO-247 package	Higher R_thJC (0.85 °C/W) and larger footprint; superior avalanche rating	Chosen when maximum ruggedness is required and board space permits TO-247 mechanical layout

Compared with STP11NM50N and IXTH11N50L, the IRFS11N50APBF delivers optimal balance of D2PAK thermal efficiency (R_thJC = 0.75 °C/W), industry-leading C_{oss eff.} characterization, and proven 275 mJ avalanche capability - making it ideal for compact, high-reliability SMPS and UPS designs where thermal density and transient immunity are co-critical.

Availability

IRFS11N50APBF is available at Aetrix Electronics and suitable for Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), and Power Factor Correction Boost applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFS11N50APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and reliability.

The IRFS11N50APBF belongs to Vishay's high-voltage power MOSFET product line engineered for industrial-grade switching applications demanding high avalanche energy, low gate charge, and stable parametric performance over temperature.

FAQ

What is the maximum continuous drain current for IRFS11N50APBF at 100 °C case temperature?

The IRFS11N50APBF supports 7.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the D2PAK package and must be used in thermal design calculations when ambient or heatsink conditions elevate case temperature beyond 25 °C. The IRFS11N50APBF maintains safe operation within its SOA curve under these conditions when mounted on adequate copper area.

Does IRFS11N50APBF have a fully characterized body diode for synchronous rectification?

Yes, the IRFS11N50APBF includes fully characterized body diode parameters: reverse recovery time (t_rr = 510–770 ns), reverse recovery charge (Q_rr = 3.4–5.1 μC), and forward voltage (V_SD = 1.5 V at I_S = 11 A). These values are measured per JEDEC standards and enable accurate dead-time optimization and loss estimation in synchronous rectifier or bidirectional converter topologies using the IRFS11N50APBF.

What is the gate threshold voltage range for IRFS11N50APBF, and how does it affect drive circuit design?

The IRFS11N50APBF has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C. This moderate threshold ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise coupling. Drive circuits must supply ≥10 V to achieve rated R_DS(on) of 0.52 Ω; the IRFS11N50APBF is not a logic-level device and requires dedicated gate bias above 4.5 V for full enhancement.

Can IRFS11N50APBF be used in avalanche mode, and what is its single-pulse energy rating?

Yes, the IRFS11N50APBF is fully rated for repetitive and single-pulse avalanche operation. Its single-pulse avalanche energy (E_AS) is 275 mJ under test conditions of I_AS = 11 A, L = 4.5 mH, and R_g = 25 Ω. This rating is validated per JEDEC JESD24-11 and allows the IRFS11N50APBF to safely absorb inductive energy in flyback, forward, and LLC resonant converters without external clamping components.

What thermal resistance values apply to IRFS11N50APBF in D2PAK package?

The IRFS11N50APBF specifies R_thJC = 0.75 °C/W (max) from junction to case, and R_thJA = 62 °C/W (max) from junction to ambient. The low R_thJC enables efficient heat transfer to an external heatsink via the exposed drain tab, while R_thJA applies only to devices mounted on standard FR-4 with minimal copper. For production designs, thermal performance of the IRFS11N50APBF must be validated using measured case temperature and actual PCB copper area.

IRFS11N50APBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 520mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1423 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRFS11N50APBF FAQ

1.How can I place an order for IRFS11N50APBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS11N50APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS11N50APBF reliable?

The price and inventory of IRFS11N50APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS11N50APBF is usually 5 days.

3.What payment methods are accepted for IRFS11N50APBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS11N50APBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS11N50APBF?

IRFS11N50APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS11N50APBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS11N50APBF?

For technical support, including IRFS11N50APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS11N50APBF requirements.

6.How does Aetrix verify that IRFS11N50APBF is sourced from the original manufacturer or authorized distributors?

All IRFS11N50APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS11N50APBF meets industry standards.

7.What is the process for return or replacement of IRFS11N50APBF?

All IRFS11N50APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS11N50APBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS11N50APBF part is unused and in its original packaging.

Return procedure for IRFS11N50APBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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