Vishay Siliconix IRFS11N50ATRL

Overview

IRFS11N50ATRL from Vishay Siliconix is a 500 V, 11 A N-channel power MOSFET in D2PAK (TO-263) package, with R_DS(on) = 0.52 Ω at V_GS = 10 V, Q_g = 52 nC, and rated for repetitive avalanche energy of 17 mJ - designed for high-speed switching in SMPS half-bridge and PFC boost topologies.

For engineers reviewing the IRFS11N50ATRL datasheet, IRFS11N50ATRL pinout, IRFS11N50ATRL application, or IRFS11N50ATRL equivalent, key selection criteria include its 500 V V_DS, low gate charge enabling simple drive, robust dV/dt ruggedness (6.9 V/ns), and validated unclamped inductive switching performance up to 11 A.

Technical Context

This device employs a planar vertical DMOS structure optimized for high-voltage switching with enhanced avalanche capability. Its gate threshold voltage (2.0–4.0 V) and low Q_gd/Q_g ratio (18/52 ≈ 35%) support fast, controllable turn-off in hard-switched converters.

The integrated body diode exhibits t_rr = 510–770 ns and Q_rr = 3.4–5.1 μC at I_F = 11 A, dI/dt = 100 A/μs, making it suitable for synchronous rectification and freewheeling in bridge configurations where reverse recovery behavior directly impacts EMI and efficiency.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal management; 3-pin configuration (G, D, S) with drain connected to the large copper tab on the underside.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP12NK50ZFP and IXTH12N50L, IRFS11N50ATRL delivers optimal balance of low gate charge, surface-mount thermal efficiency, and validated avalanche robustness - making it especially suited for compact, high-reliability SMPS and UPS designs where D2PAK layout and thermal management are prioritized.

Availability

IRFS11N50ATRL is available at Aetrix Electronics and suitable for Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), and Power Factor Correction (PFC) boost applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRFS11N50ATRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific characterization.

The IRFS11N50ATRL belongs to Vishay's high-voltage power MOSFET product line engineered for industrial-grade switching in power conversion systems demanding high dV/dt immunity, repeatable avalanche tolerance, and precise dynamic parameter definition.

FAQ

What is the maximum continuous drain current for IRFS11N50ATRL at 100 °C case temperature?

The maximum continuous drain current for IRFS11N50ATRL is 7.0 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full-load conditions. The IRFS11N50ATRL datasheet provides thermal resistance values (R_thJC = 0.75 °C/W) to support this calculation.

Does IRFS11N50ATRL have a fully characterized body diode, and what are its key recovery parameters?

Yes, IRFS11N50ATRL features a fully characterized intrinsic body diode with t_rr = 510–770 ns and Q_rr = 3.4–5.1 μC at T_J = 25 °C, I_F = 11 A, and dI/dt = 100 A/μs. These values are measured and documented in the datasheet, enabling accurate prediction of reverse recovery losses and EMI in bridge configurations. The IRFS11N50ATRL body diode voltage (V_SD) is 1.5 V at I_S = 11 A, supporting use in freewheeling and synchronous rectification roles.

Is IRFS11N50ATRL RoHS-compliant, and what does the "-TRL" suffix indicate?

Yes, IRFS11N50ATRL is RoHS-compliant and halogen-free, as confirmed by Vishay's material categorization documentation. The "-TRL" suffix denotes tape-and-reel packaging optimized for automated SMT placement, with standard reel quantity and moisture sensitivity level (MSL) 1 rating. This makes IRFS11N50ATRL suitable for high-volume manufacturing without baking requirements. All compliance details for IRFS11N50ATRL are referenced in Vishay document #99912.

What is the gate threshold voltage range for IRFS11N50ATRL, and how does it affect drive circuit design?

The gate threshold voltage (V_GS(th)) for IRFS11N50ATRL is 2.0–4.0 V at I_D = 250 μA, confirming compatibility with standard 10 V gate drive. This range ensures reliable turn-on with typical PWM controllers while avoiding unintended conduction from noise. Designers should apply ≥10 V to achieve the specified R_DS(on) = 0.52 Ω. The IRFS11N50ATRL gate leakage (±100 nA at ±30 V) is low enough to prevent significant bias current errors in high-impedance drive networks.

Can IRFS11N50ATRL be used in avalanche-mode operation, and what are its rated energy limits?

Yes, IRFS11N50ATRL is fully characterized for both single-pulse (E_AS = 275 mJ) and repetitive avalanche (E_AR = 17 mJ, I_AR = 11 A) operation. These ratings are validated per JEDEC standards using unclamped inductive test circuits. For reliable repetitive use, designers must ensure pulse width and duty cycle remain within limits defined in Figure 11 and note 'a' of the datasheet. The IRFS11N50ATRL avalanche performance eliminates need for external clamps in many industrial SMPS designs.