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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFS11N50ATRLP

Name: IRFS11N50ATRLP
Brand: Vishay Siliconix
SKU: IRFS11N50ATRLP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS11N50ATRLP

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS11N50ATRLP.pdf

Description:: MOSFET N-CH 500V 11A TO263AB

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Product details

Overview

IRFS11N50ATRLP from Vishay Siliconix is a 500 V, 11 A N-channel power MOSFET in D2PAK (TO-263) package, optimized for high-speed switching in SMPS and UPS systems. It features R_DS(on) = 0.52 Ω at V_GS = 10 V, Q_g = 52 nC, and robust avalanche capability (E_AS = 275 mJ), enabling efficient hard-switched bridge topologies.

For engineers reviewing the IRFS11N50ATRLP datasheet, IRFS11N50ATRLP pinout, IRFS11N50ATRLP application, or IRFS11N50ATRLP equivalent, key selection criteria include its 500 V blocking rating, low gate charge for simplified drive, body diode recovery performance (t_rr = 510–770 ns), and thermal resistance (R_thJC = 0.75 °C/W) for high-power density designs.

Technical Context

This MOSFET employs planar silicon technology with fully characterized capacitance profiles (C_iss = 1423 pF, C_oss = 208 pF, C_rss = 8.1 pF) and specified effective output capacitance (C_{oss eff.} = 97 pF) to support accurate snubber and timing calculations in resonant and hard-switched converters.

Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) and transconductance (g_fs = 6.1 S) ensure stable turn-on under wide temperature and drive conditions, while dV/dt ruggedness (6.9 V/ns) and repetitive avalanche rating (I_AR = 11 A, E_AR = 17 mJ) support reliable operation in inductive switching environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Supports primary-side switching in 400 V DC bus applications including PFC boost and two-transistor forward converters.
R_DS(on)	0.52 Ω @ V_GS = 10 V - Enables <1.2 W conduction loss at 11 A continuous drain current, critical for thermal management in compact SMPS.
Q_g	52 nC - Determines gate driver power requirement and switching speed; compatible with standard 1-A peak drivers in 100–500 kHz designs.
E_AS	275 mJ - Specifies single-pulse unclamped inductive energy handling, supporting robustness during startup or fault conditions without external clamping.
t_r/t_f	35 ns / 28 ns - Fast transition times reduce switching losses and EMI generation in high-frequency power stages.
R_thJC	0.75 °C/W - Enables 170 W power dissipation with ≤127.5 °C junction rise above case, facilitating heatsink sizing for industrial-grade thermal design.
V_SD	1.5 V @ I_S = 11 A - Body diode forward voltage impacts synchronous rectification losses and reverse recovery stress in LLC or phase-shifted full-bridge topologies.

Pinout & Package

D2PAK (TO-263) package with exposed drain tab for low thermal resistance and high-current capability. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Drain tab electrically connected to pin 2 (Drain) and serves as primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives PWM signal; requires ≤10 V logic-level drive; gate-source leakage ≤ ±100 nA ensures low standby power.
D	High-side drain node	Connected to drain tab; carries full load current and withstands 500 V transient spikes; primary thermal interface to heatsink.
S	Source reference and return path	Common source node for gate drive reference and current sensing; supports Kelvin source connection for accurate R_DS(on) monitoring.

Key Features

Feature	Design Value
Low Q_g	52 nC enables simple gate drive with minimal Miller plateau duration, reducing risk of shoot-through in half-bridge configurations.
Characterized C_oss & C_{oss eff.}	C_{oss eff.} = 97 pF provides predictable timing for zero-voltage switching (ZVS) design in resonant converters.
Avalanche-rated	275 mJ single-pulse and 17 mJ repetitive avalanche energy allow operation without external snubbers in inductive switching circuits.
Body diode t_rr	510–770 ns with Q_rr = 3.4–5.1 μC enables controlled recovery in hard-commutated topologies, minimizing voltage overshoot.
dV/dt ruggedness	6.9 V/ns rating prevents false turn-on during high dv/dt transients common in high-frequency bridge legs.

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in 500 W two-transistor forward converter with 400 V DC bus. IC Role / Device Role / Timing Role: High-voltage, high-current switching element controlling energy transfer through transformer primary winding. Use Value: 500 V V_DS rating and 275 mJ E_AS ensure safe operation during line surges and transformer reset events.	Use Scenario: Inverter stage H-bridge switch in online double-conversion UPS delivering 1 kVA output. IC Role / Device Role / Timing Role: Half-bridge leg switch managing bidirectional power flow between battery bank and AC output. Use Value: Low R_DS(on) (0.52 Ω) minimizes conduction loss at 11 A RMS, while fast t_r/t_f reduces switching loss at 20–50 kHz PWM frequency.
Power Factor Correction (PFC) Boost	High-Speed Industrial Motor Drive
Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for server PSU. IC Role / Device Role / Timing Role: Main switching device shaping input current waveform to match sinusoidal AC voltage. Use Value: Specified C_iss/C_oss/C_rss enable precise EMI filter design; Q_g = 52 nC supports efficient gate driving at 65–100 kHz.	Use Scenario: High-side switch in 3-phase inverter stage for 750 W servo amplifier. IC Role / Device Role / Timing Role: Fast-switching power stage component enabling precise PWM-controlled torque delivery. Use Value: 6.9 V/ns dV/dt ruggedness prevents spurious turn-on during cross-conduction; body diode t_rr < 770 ns limits commutation loss during regeneration.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in 500 W two-transistor forward converter with 400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element controlling energy transfer through transformer primary winding.

Use Value: 500 V V_DS rating and 275 mJ E_AS ensure safe operation during line surges and transformer reset events.

Use Scenario: Inverter stage H-bridge switch in online double-conversion UPS delivering 1 kVA output.

IC Role / Device Role / Timing Role: Half-bridge leg switch managing bidirectional power flow between battery bank and AC output.

Use Value: Low R_DS(on) (0.52 Ω) minimizes conduction loss at 11 A RMS, while fast t_r/t_f reduces switching loss at 20–50 kHz PWM frequency.

Power Factor Correction (PFC) Boost

High-Speed Industrial Motor Drive

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for server PSU.

IC Role / Device Role / Timing Role: Main switching device shaping input current waveform to match sinusoidal AC voltage.

Use Value: Specified C_iss/C_oss/C_rss enable precise EMI filter design; Q_g = 52 nC supports efficient gate driving at 65–100 kHz.

Use Scenario: High-side switch in 3-phase inverter stage for 750 W servo amplifier.

IC Role / Device Role / Timing Role: Fast-switching power stage component enabling precise PWM-controlled torque delivery.

Use Value: 6.9 V/ns dV/dt ruggedness prevents spurious turn-on during cross-conduction; body diode t_rr < 770 ns limits commutation loss during regeneration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50ZFP	500 V, 12 A, R_DS(on) = 0.58 Ω, Q_g = 45 nC, TO-220FP package	Higher R_DS(on) and lower power dissipation (125 W vs. 170 W); no D2PAK thermal pad	Preferred where board space permits TO-220FP and lower gate charge is prioritized over thermal performance.
IXTH12N50L	500 V, 12 A, R_DS(on) = 0.55 Ω, Q_g = 58 nC, TO-247 package	Higher Q_g, larger footprint, higher R_thJC (0.83 °C/W); enhanced avalanche rating (E_AS = 320 mJ)	Selected when maximum avalanche margin is required and TO-247 mechanical mounting is acceptable.

Compared with STP12NK50ZFP and IXTH12N50L, IRFS11N50ATRLP offers superior thermal performance via D2PAK's 0.75 °C/W R_thJC, tighter R_DS(on) tolerance, and validated C_{oss eff.} for ZVS design-making it optimal for space-constrained, high-efficiency SMPS where thermal density and switching predictability are critical.

Availability

IRFS11N50ATRLP is available at Aetrix Electronics and suitable for Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), and Power Factor Correction (PFC) applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFS11N50ATRLP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The IRFS11N50ATRLP belongs to Vishay's high-voltage TrenchFET® family, engineered for high-efficiency, high-reliability switching in telecom, computing, and industrial power supplies where ruggedness and thermal performance are essential.

FAQ

What is the maximum continuous drain current for IRFS11N50ATRLP at 100 °C case temperature?

The maximum continuous drain current for IRFS11N50ATRLP is 7.0 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be verified against actual PCB layout, heatsinking, and ambient conditions in the final design. IRFS11N50ATRLP maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient.

Does IRFS11N50ATRLP have a fully characterized body diode for synchronous rectification analysis?

Yes, IRFS11N50ATRLP includes full body diode characterization: V_SD = 1.5 V at I_S = 11 A, t_rr = 510–770 ns, Q_rr = 3.4–5.1 μC, and dI/dt limit of 140 A/μs. These parameters are measured per JEDEC standards and enable accurate loss modeling in topologies relying on intrinsic diode conduction, such as LLC resonant converters.

Is IRFS11N50ATRLP RoHS-compliant and halogen-free?

Yes, IRFS11N50ATRLP is lead (Pb)-free and halogen-free, conforming to Vishay's "-GE3" suffix standard. It meets the material categorization requirements defined in Vishay document 99912 and complies with EU RoHS Directive 2011/65/EU. The part marking and packaging reflect full environmental compliance without performance trade-offs.

What is the gate threshold voltage range for IRFS11N50ATRLP, and how does it affect drive design?

The gate threshold voltage (V_GS(th)) for IRFS11N50ATRLP is 2.0–4.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing unintended conduction from noise. Designers must ensure V_GS exceeds 4.0 V for full enhancement and account for gate driver output impedance to avoid operating near the threshold region during PWM transitions.

Can IRFS11N50ATRLP be used in avalanche-mode operation, and what are the limits?

Yes, IRFS11N50ATRLP is rated for both single-pulse (E_AS = 275 mJ) and repetitive avalanche (E_AR = 17 mJ, I_AR = 11 A). Repetitive operation requires pulse width and duty cycle limits per Figure 11 and must maintain T_J ≤ 150 °C. Avalanche testing follows JEDEC JESD24-11 methodology, and IRFS11N50ATRLP's ruggedness is validated across manufacturing lots.

IRFS11N50ATRLP Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 520mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1423 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263AB

IRFS11N50ATRLP FAQ

1.How can I place an order for IRFS11N50ATRLP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS11N50ATRLP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS11N50ATRLP reliable?

The price and inventory of IRFS11N50ATRLP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS11N50ATRLP is usually 5 days.

3.What payment methods are accepted for IRFS11N50ATRLP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS11N50ATRLP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS11N50ATRLP?

IRFS11N50ATRLP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS11N50ATRLP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS11N50ATRLP?

For technical support, including IRFS11N50ATRLP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS11N50ATRLP requirements.

6.How does Aetrix verify that IRFS11N50ATRLP is sourced from the original manufacturer or authorized distributors?

All IRFS11N50ATRLP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS11N50ATRLP meets industry standards.

7.What is the process for return or replacement of IRFS11N50ATRLP?

All IRFS11N50ATRLP units undergo pre-shipment inspection (PSI). If there is an issue with IRFS11N50ATRLP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS11N50ATRLP part is unused and in its original packaging.

Return procedure for IRFS11N50ATRLP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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