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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFS11N50ATRR

Name: IRFS11N50ATRR
Brand: Vishay Siliconix
SKU: IRFS11N50ATRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS11N50ATRR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS11N50ATRR.pdf

Description:: MOSFET N-CH 500V 11A D2PAK

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Product details

Overview

IRFS11N50ATRR from Vishay Siliconix is a 500 V, 11 A N-channel power MOSFET in D2PAK (TO-263) package, with R_DS(on) = 0.52 Ω at V_GS = 10 V, Q_g = 52 nC, and rated for repetitive avalanche energy of 17 mJ - designed for high-speed switching in SMPS half-bridge and PFC boost topologies.

For engineers reviewing the IRFS11N50ATRR datasheet, IRFS11N50ATRR pinout, IRFS11N50ATRR application, or IRFS11N50ATRR equivalent, key selection criteria include its 500 V blocking voltage, low gate charge for simplified drive, robust dV/dt ruggedness (6.9 V/ns), and validated unclamped inductive switching performance up to 11 A.

Technical Context

This device employs planar vertical DMOS technology optimized for high-voltage, medium-current switching. Its gate structure delivers low Q_g/Q_gd ratio (52 nC / 18 nC), enabling fast turn-on/turn-off with reduced Miller-induced shoot-through risk in bridge configurations.

The integrated body diode features t_rr = 510–770 ns and Q_rr = 3.4–5.1 μC at I_F = 11 A, supporting hard-switched PFC stages where controlled reverse recovery is critical to EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in offline 400 V DC bus applications without derating
R_DS(on)	0.52 Ω @ V_GS = 10 V - limits conduction loss to ≤ 60 W at 11 A continuous drain current
Q_g	52 nC - enables gate drive with standard 1 A peak drivers at ≤ 500 kHz switching frequency
E_AS	275 mJ - withstands single-pulse inductive energy in UPS and motor control fault conditions
t_rr	510–770 ns - ensures predictable diode recovery timing in synchronous rectification and PFC designs
R_thJC	0.75 °C/W - allows ≥ 130 W power dissipation with 25 °C case temperature and minimal heatsink
I_D (T_C = 100 °C)	7.0 A - defines usable current limit in thermally constrained industrial enclosures

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); lead (Pb)-free and halogen-free per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–10 V logic-level signal; requires ≤ 52 nC charge for full enhancement
D (Drain)	High-side power terminal	Connected to exposed copper pad; carries full load current and dissipates heat directly to PCB/heatsink
S (Source)	Reference and return path	Common node for gate drive reference and current sensing; tied to power ground in low-side switch layouts

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	52 nC total gate charge with only 18 nC Miller charge - reduces switching losses and improves noise immunity in high-dV/dt environments
Specified C_{oss eff.}	97 pF effective output capacitance - enables accurate snubber design and soft-switching analysis across 0–400 V V_DS
Characterized avalanche capability	275 mJ single-pulse and 17 mJ repetitive avalanche energy - eliminates need for external clamping in inductive load transients
Enhanced dV/dt ruggedness	6.9 V/ns peak diode recovery dV/dt - prevents false turn-on during high-speed commutation in bridge circuits

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Two-transistor forward converter operating from 375–400 V DC bus in telecom rectifiers. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer via transformer reset. Use Value: 500 V rating and 0.52 Ω R_DS(on) enable >92% efficiency at 1 kW with <100 W conduction loss.	Use Scenario: Online double-conversion UPS delivering clean 230 V AC during grid failure. IC Role / Device Role / Timing Role: Inverter-stage half-bridge switch converting battery DC to regulated AC output. Use Value: Repetitive avalanche rating (17 mJ) sustains operation during load dump or short-circuit events without failure.
Power Factor Correction Boost	High-Speed Industrial Motor Drive
Use Scenario: Continuous conduction mode (CCM) PFC front-end for server PSUs. IC Role / Device Role / Timing Role: Boost switch cycling at 65–100 kHz to shape input current waveform. Use Value: Low Q_gd (18 nC) minimizes dead-time losses and improves THD performance under dynamic loads.	Use Scenario: 3-phase inverter stage driving 3 kW BLDC motor in CNC spindle control. IC Role / Device Role / Timing Role: High-side leg switch in 6-pack IGBT/MOSFET module replacement. Use Value: Body diode t_rr (510–770 ns) and Q_rr (3.4–5.1 μC) ensure predictable freewheeling behavior during PWM commutation.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Two-transistor forward converter operating from 375–400 V DC bus in telecom rectifiers.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer via transformer reset.

Use Value: 500 V rating and 0.52 Ω R_DS(on) enable >92% efficiency at 1 kW with <100 W conduction loss.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC during grid failure.

IC Role / Device Role / Timing Role: Inverter-stage half-bridge switch converting battery DC to regulated AC output.

Use Value: Repetitive avalanche rating (17 mJ) sustains operation during load dump or short-circuit events without failure.

Power Factor Correction Boost

High-Speed Industrial Motor Drive

Use Scenario: Continuous conduction mode (CCM) PFC front-end for server PSUs.

IC Role / Device Role / Timing Role: Boost switch cycling at 65–100 kHz to shape input current waveform.

Use Value: Low Q_gd (18 nC) minimizes dead-time losses and improves THD performance under dynamic loads.

Use Scenario: 3-phase inverter stage driving 3 kW BLDC motor in CNC spindle control.

IC Role / Device Role / Timing Role: High-side leg switch in 6-pack IGBT/MOSFET module replacement.

Use Value: Body diode t_rr (510–770 ns) and Q_rr (3.4–5.1 μC) ensure predictable freewheeling behavior during PWM commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50ZFP	500 V, 12 A, R_DS(on) = 0.52 Ω, Q_g = 45 nC, TO-220FP package	Lower thermal resistance to ambient but no exposed drain pad; unsuitable for high-power SMT layouts	Prefer when through-hole mounting and lower gate drive demand are prioritized over board space and thermal density
IXTH12N50L	500 V, 12 A, R_DS(on) = 0.45 Ω, Q_g = 62 nC, TO-247 package	Lower on-resistance but higher gate charge; requires stronger gate driver and larger heatsink footprint	Choose when conduction loss dominates system efficiency and layout allows TO-247 mechanical clearance

Compared with STP12NK50ZFP and IXTH12N50L, the IRFS11N50ATRR offers optimal balance of SMT-compatible thermal performance (R_thJC = 0.75 °C/W), moderate gate drive burden (52 nC), and proven avalanche reliability - making it preferred for compact, high-density 500 V SMPS and UPS inverters.

Availability

IRFS11N50ATRR is available at Aetrix Electronics and suitable for Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), and Power Factor Correction (PFC) applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFS11N50ATRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFS11N50ATRR belongs to Vishay's high-voltage TrenchFET®-derived power MOSFET family, engineered for robustness in hard-switched offline power conversion systems demanding high dV/dt immunity and repeatable avalanche performance.

FAQ

What is the maximum continuous drain current rating for IRFS11N50ATRR at 100 °C case temperature?

The IRFS11N50ATRR has a maximum continuous drain current (I_D) of 7.0 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be used for thermal design validation in enclosed industrial environments where heatsink temperature reaches 100 °C.

Does IRFS11N50ATRR support logic-level gate drive?

No, the IRFS11N50ATRR is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and it requires V_GS = 10 V to achieve R_DS(on) = 0.52 Ω. Driving it with 3.3 V or 5 V logic signals results in incomplete enhancement and excessive conduction loss - a dedicated 10 V gate driver is required for full performance of the IRFS11N50ATRR.

What is the significance of the "TRR" suffix in IRFS11N50ATRR?

The "TRR" suffix in IRFS11N50ATRR denotes tape-and-reel packaging with 800 units per reel, intended for automated SMT assembly. It indicates RoHS-compliant, lead (Pb)-free, and halogen-free construction per Vishay specification, and distinguishes it from tube-packaged variants like IRFS11N50APbF. The IRFS11N50ATRR is optimized for high-volume manufacturing flow.

Can IRFS11N50ATRR be used in synchronous rectification topologies?

The IRFS11N50ATRR is not recommended for synchronous rectification due to its relatively high R_DS(on) (0.52 Ω) and non-optimized body diode characteristics (t_rr = 510–770 ns). Synchronous rectifiers require ultra-low on-resistance and fast, soft-recovery diodes - devices like Vishay SiR626DP or Infineon BSC014N06LS3 are better suited. The IRFS11N50ATRR functions best as a primary-side switch, not a secondary-side rectifier.

What is the peak diode recovery dV/dt rating for IRFS11N50ATRR, and why does it matter?

The IRFS11N50ATRR is rated for peak diode recovery dV/dt of 6.9 V/ns. This parameter quantifies its immunity to false turn-on during rapid voltage transients across the drain-source terminals when the body diode is recovering. In half-bridge or LLC resonant converters, exceeding this dV/dt can induce unintended conduction - proper gate resistor selection (e.g., R_g = 25 Ω) and layout minimization of stray inductance are essential to maintain reliable operation of the IRFS11N50ATRR.

IRFS11N50ATRR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 520mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1423 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRFS11N50ATRR FAQ

1.How can I place an order for IRFS11N50ATRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS11N50ATRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS11N50ATRR reliable?

The price and inventory of IRFS11N50ATRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS11N50ATRR is usually 5 days.

3.What payment methods are accepted for IRFS11N50ATRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS11N50ATRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS11N50ATRR?

IRFS11N50ATRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS11N50ATRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS11N50ATRR?

For technical support, including IRFS11N50ATRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS11N50ATRR requirements.

6.How does Aetrix verify that IRFS11N50ATRR is sourced from the original manufacturer or authorized distributors?

All IRFS11N50ATRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS11N50ATRR meets industry standards.

7.What is the process for return or replacement of IRFS11N50ATRR?

All IRFS11N50ATRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFS11N50ATRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS11N50ATRR part is unused and in its original packaging.

Return procedure for IRFS11N50ATRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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