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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFS11N50ATRRP

Name: IRFS11N50ATRRP
Brand: Vishay Siliconix
SKU: IRFS11N50ATRRP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS11N50ATRRP

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS11N50ATRRP.pdf

Description:: MOSFET N-CH 500V 11A D2PAK

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Product details

Overview

IRFS11N50ATRRP from Vishay Siliconix is a 500 V, 11 A N-channel power MOSFET in D2PAK (TO-263) package, optimized for high-speed switching in SMPS and UPS systems. It features R_DS(on) = 0.52 Ω at V_GS = 10 V, Q_g = 52 nC, and robust avalanche capability (E_AS = 275 mJ), enabling efficient hard-switched bridge topologies.

For engineers reviewing the IRFS11N50ATRRP datasheet, IRFS11N50ATRRP pinout, IRFS11N50ATRRP application, or IRFS11N50ATRRP equivalent, key selection criteria include its 500 V blocking rating, low gate charge for simplified drive, body diode recovery time (t_rr = 510–770 ns), thermal resistance (R_thJC = 0.75 °C/W), and D2PAK package suitability for high-power industrial converters.

Technical Context

This MOSFET employs planar VDMOS technology with fully characterized capacitance (C_iss = 1423 pF, C_oss = 208 pF) and effective output capacitance (C_{oss eff.} = 97 pF) to support predictable snubber design and ZVS transition analysis. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures stable turn-on under wide temperature ranges (T_J = –55 to +150 °C).

The device integrates a fast-recovery body diode (Q_rr = 3.4–5.1 μC, t_rr = 510–770 ns) and supports repetitive avalanche operation (I_AR = 11 A, E_AR = 17 mJ), making it suitable for unclamped inductive switching in forward and PFC boost topologies without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Supports primary-side switching in 400 V DC bus applications with 25 % margin
R_DS(on)	0.52 Ω @ V_GS = 10 V - Enables <1.5 W conduction loss at 11 A continuous drain current
Q_g	52 nC - Reduces gate driver power requirement and simplifies 12 V logic-level drive design
E_AS	275 mJ - Withstands single-pulse inductive energy without failure in flyback or forward converters
t_r/t_f	35 ns / 28 ns - Supports >500 kHz switching frequency with controlled dV/dt (6.9 V/ns)
R_thJC	0.75 °C/W - Allows 170 W power dissipation at T_C = 25 °C with minimal heatsink interface resistance
I_D (T_C = 100 °C)	7.0 A - Defines usable current derating for sustained operation in enclosed industrial enclosures

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated thermal pad on drain (pin 2), rated for 170 W maximum power dissipation at T_C = 25 °C. Package outline conforms to JEDEC TO-263AB standard; recommended PCB pad dimensions per Vishay AN826.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 10 V drive for full enhancement; ±30 V absolute max rating
2 (D)	Drain	Main power terminal and thermal path; electrically connected to exposed metal tab (drain potential)
3 (S)	Source	Power return and reference node; forms common connection with gate drive ground in low-side configuration

Key Features

Feature	Design Value
Low Q_g (52 nC)	Reduces gate driver IC stress and enables use of cost-effective 12 V microcontroller GPIOs without buffer stages
Fully characterized C_oss & C_{oss eff.}	Enables accurate soft-switching timing prediction and snubber component selection across 0–400 V V_DS range
Robust avalanche rating (E_AS = 275 mJ)	Eliminates need for external clamping circuits in two-transistor forward and resonant LLC primary switches
Fast body diode recovery (t_rr = 510–770 ns)	Minimizes cross-conduction losses during synchronous rectification or half-bridge dead-time transitions
Thermal resistance R_thJC = 0.75 °C/W	Supports compact thermal design with direct heatsink mounting via soldered thermal pad, reducing system footprint

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in 500–1000 W two-transistor forward converter operating from 380–400 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer to transformer primary; operates at 100–200 kHz with hard switching. Use Value: 500 V V_DS rating and 275 mJ E_AS ensure reliable operation during line surges and transformer leakage inductance spikes.	Use Scenario: Inverter stage H-bridge switch in online double-conversion UPS delivering clean 230 V AC output. IC Role / Device Role / Timing Role: N-channel high-side/low-side switching element; driven by isolated gate drivers with precise dead-time control. Use Value: Low R_DS(on) (0.52 Ω) minimizes conduction loss at 11 A RMS load current; fast t_r/t_f enables tight PWM resolution.
Power Factor Correction (PFC) Boost	High-Speed Industrial Motor Drive
Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for server PSUs and telecom rectifiers. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch synchronizing with AC input zero-crossings; handles 11 A peak inductor current. Use Value: Confirmed Q_gd/Q_gs ratio (18/13) supports stable Miller plateau control; low C_oss reduces switching loss at 65–100 kHz.	Use Scenario: Half-bridge leg in 3 kW servo drive inverter powering 400 V AC induction motors. IC Role / Device Role / Timing Role: Fast-switching power stage element handling repetitive 44 A pulsed drain current (I_DM) during acceleration transients. Use Value: Repetitive avalanche rating (I_AR = 11 A, E_AR = 17 mJ) sustains safe operation during motor regeneration and short-circuit fault conditions.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in 500–1000 W two-transistor forward converter operating from 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer to transformer primary; operates at 100–200 kHz with hard switching.

Use Value: 500 V V_DS rating and 275 mJ E_AS ensure reliable operation during line surges and transformer leakage inductance spikes.

Use Scenario: Inverter stage H-bridge switch in online double-conversion UPS delivering clean 230 V AC output.

IC Role / Device Role / Timing Role: N-channel high-side/low-side switching element; driven by isolated gate drivers with precise dead-time control.

Use Value: Low R_DS(on) (0.52 Ω) minimizes conduction loss at 11 A RMS load current; fast t_r/t_f enables tight PWM resolution.

Power Factor Correction (PFC) Boost

High-Speed Industrial Motor Drive

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch synchronizing with AC input zero-crossings; handles 11 A peak inductor current.

Use Value: Confirmed Q_gd/Q_gs ratio (18/13) supports stable Miller plateau control; low C_oss reduces switching loss at 65–100 kHz.

Use Scenario: Half-bridge leg in 3 kW servo drive inverter powering 400 V AC induction motors.

IC Role / Device Role / Timing Role: Fast-switching power stage element handling repetitive 44 A pulsed drain current (I_DM) during acceleration transients.

Use Value: Repetitive avalanche rating (I_AR = 11 A, E_AR = 17 mJ) sustains safe operation during motor regeneration and short-circuit fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50ZFP	500 V, 12 A, R_DS(on) = 0.55 Ω, Q_g = 45 nC, TO-220FP package	Lower Q_g but higher R_DS(on); through-hole mounting limits thermal performance vs. D2PAK	Prefer for lower-cost prototyping where surface-mount assembly is unavailable
IXFH12N50P	500 V, 12 A, R_DS(on) = 0.50 Ω, Q_g = 62 nC, TO-247 package	Higher Q_g increases gate drive loss; TO-247 offers superior heatsinking but larger footprint	Prefer for ultra-high-reliability designs requiring >200 W dissipation with forced-air cooling

Compared with STP12NK50ZFP and IXFH12N50P, the IRFS11N50ATRRP delivers optimal balance of low gate charge, D2PAK thermal efficiency, and avalanche ruggedness for space-constrained industrial SMPS-without requiring PCB redesign or layout changes for alternative packages.

Availability

IRFS11N50ATRRP is available at Aetrix Electronics and suitable for Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), and Power Factor Correction (PFC) boost applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IRFS11N50ATRRP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFS11N50ATRRP belongs to Vishay's high-voltage power MOSFET product line, engineered for rugged, high-efficiency switching in offline AC-DC conversion and industrial power systems.

FAQ

What is the maximum continuous drain current rating for IRFS11N50ATRRP at 100 °C case temperature?

The IRFS11N50ATRRP has a maximum continuous drain current (I_D) of 7.0 A when the case temperature is maintained at 100 °C. This derating reflects thermal limitations of the D2PAK package and ensures junction temperature remains within the safe operating range of –55 to +150 °C. The full 11 A rating applies only at T_C = 25 °C.

Does IRFS11N50ATRRP support avalanche operation, and what are its key avalanche ratings?

Yes, the IRFS11N50ATRRP is fully specified for both single-pulse and repetitive avalanche operation. Its single-pulse avalanche energy (E_AS) is 275 mJ, and it supports repetitive avalanche current (I_AR) up to 11 A with energy per pulse (E_AR) of 17 mJ. These values are validated per test conditions in Figure 12 and Table 1 of the Vishay datasheet S13-1927-Rev. E.

What is the gate threshold voltage range for IRFS11N50ATRRP, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for IRFS11N50ATRRP is specified from 2.0 V to 4.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while avoiding unintended conduction from noise or leakage. It is not a logic-level MOSFET (which would have V_GS(th) < 2.0 V), so 5 V microcontroller outputs require level-shifting or buffering for full enhancement.

How does the body diode performance of IRFS11N50ATRRP impact its use in half-bridge configurations?

The IRFS11N50ATRRP body diode has t_rr = 510–770 ns and Q_rr = 3.4–5.1 μC at T_J = 25 °C, enabling acceptable commutation behavior in half-bridge topologies. However, its reverse recovery characteristics necessitate careful dead-time selection to avoid shoot-through; designers should verify timing margins using actual waveforms under load, especially above 100 kHz switching.

Is IRFS11N50ATRRP RoHS-compliant, and what does the 'TRRP' suffix indicate?

Yes, IRFS11N50ATRRP is RoHS-compliant and halogen-free. The 'TRRP' suffix denotes tape-and-reel packaging (TR), lead (Pb)-free and halogen-free construction (RP), and Vishay's standard green environmental compliance designation. It replaces legacy Pb-bearing variants like IRFS11N50APbF and aligns with Vishay document 99912 for material categorization.

IRFS11N50ATRRP Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 520mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1423 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRFS11N50ATRRP FAQ

1.How can I place an order for IRFS11N50ATRRP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS11N50ATRRP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS11N50ATRRP reliable?

The price and inventory of IRFS11N50ATRRP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS11N50ATRRP is usually 5 days.

3.What payment methods are accepted for IRFS11N50ATRRP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS11N50ATRRP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS11N50ATRRP?

IRFS11N50ATRRP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS11N50ATRRP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS11N50ATRRP?

For technical support, including IRFS11N50ATRRP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS11N50ATRRP requirements.

6.How does Aetrix verify that IRFS11N50ATRRP is sourced from the original manufacturer or authorized distributors?

All IRFS11N50ATRRP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS11N50ATRRP meets industry standards.

7.What is the process for return or replacement of IRFS11N50ATRRP?

All IRFS11N50ATRRP units undergo pre-shipment inspection (PSI). If there is an issue with IRFS11N50ATRRP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS11N50ATRRP part is unused and in its original packaging.

Return procedure for IRFS11N50ATRRP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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