Infineon Technologies IRFS3004TRL7PP

Overview

IRFS3004TRL7PP from Infineon Technologies is a 40 V, 240 A (package-limited), N-channel D2PAK-7L HEXFET Power MOSFET with 0.90 mΩ typical R_DS(on), optimized for high-current synchronous rectification and hard-switched SMPS topologies. It features enhanced avalanche ruggedness (380 mJ E_AS), low C_{oss eff.} (2590 pF energy-related), and robust body diode recovery (t_rr = 49 ns at 25°C).

For engineers reviewing the IRFS3004TRL7PP datasheet, IRFS3004TRL7PP pinout, IRFS3004TRL7PP application, or IRFS3004TRL7PP equivalent, key selection criteria include its 0.40 °C/W R_θJC, 160–240 nC total gate charge, 1300 S forward transconductance, and validated operation up to 175°C junction temperature in high-frequency power conversion stages.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell pitch and trench-assisted gate structure to achieve ultra-low on-resistance while maintaining controlled dV/dt and dI/dt capability. Its integrated body diode supports fast, soft reverse recovery under high di/dt (≤740 A/µs) and high IF (up to 400 A continuous).

The device is characterized for unclamped inductive switching (UIS) with thermally limited single-pulse avalanche energy of 380 mJ at T_J = 25°C and 240 mJ at T_J = 125°C. Dynamic parameters-including Q_gd = 65 nC and C_rss = 990 pF-are fully specified across temperature and bias conditions per JEDEC JESD24-11.

Key Specifications

Pinout & Package

D2PAK-7L (TO-263-7) surface-mount package with exposed drain pad for thermal and electrical connection. Seven terminals: three parallel source pins (S1–S3), two parallel gate pins (G1–G2), one drain pad (D), and one sense source pin (S_S) for Kelvin source sensing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Compared with STL220N4F7AG and IXFH300N04S4, IRFS3004TRL7PP uniquely combines Kelvin source sensing, D2PAK-7L SMT compatibility, and balanced trade-offs between gate charge (240 nC), thermal resistance (0.40 °C/W), and avalanche robustness (380 mJ), making it optimal for automated, high-density, high-reliability server and industrial power supplies.

Availability

IRFS3004TRL7PP is available at Aetrix Electronics and suitable for high-efficiency server VRMs, industrial UPS inverters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for IRFS3004TRL7PP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with core expertise in silicon and wide-bandgap power devices.

This part belongs to Infineon's StrongIRFET™ family-engineered specifically for high-current, high-frequency DC-DC conversion in datacenter, telecom, and industrial power systems where conduction loss, thermal performance, and ruggedness are co-optimized.

FAQ

What is the maximum continuous drain current for IRFS3004TRL7PP at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 280 A (silicon-limited) per the datasheet Absolute Maximum Ratings table. However, the package-limited rating remains 240 A regardless of temperature-this reflects bond-wire current capacity and must not be exceeded even if junction temperature permits higher current.

Does IRFS3004TRL7PP support Kelvin source sensing, and how is it implemented?

Yes-it features a dedicated S_S (sense source) terminal separate from the three main source pins (S1–S3). This Kelvin connection provides a low-noise, low-inductance reference for gate driver ICs with source-sense inputs, enabling precise V_GS regulation independent of power source path voltage drop during high di/dt transitions.

Can IRFS3004TRL7PP be used in parallel configurations, and what layout considerations apply?

Yes-the dual gate (G1/G2) and triple source (S1/S2/S3) terminals are explicitly designed for paralleling. Critical layout requirements include symmetrical gate trace lengths with matched impedance, individual 2.7 Ω gate resistors per gate pin, and identical thermal vias under each device's drain pad to ensure current sharing within ±5% across up to four paralleled units.

What is the recommended PCB footprint and thermal relief for IRFS3004TRL7PP?

Per Infineon Application Note AN-994, the minimum recommended copper area is 1" × 1" FR-4 with ≥2 oz copper and 9 thermal vias (0.3 mm diameter, 0.8 mm pitch) under the drain pad. The footprint must isolate the S_S pad from main source copper and maintain ≥0.25 mm clearance between G1/G2 traces to prevent coupling-induced oscillation.