Infineon Technologies IRFS3307ZTRRPBF

Overview

IRFS3307ZTRRPBF from Infineon Technologies is a 75V, 120A (package-limited), 4.6mΩ N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 (I²PAK) package, optimized for high-frequency hard-switching and synchronous rectification in SMPS and UPS systems. It features enhanced avalanche ruggedness (300mJ single-pulse), low Coss eff. (TR) of 410pF, and fast diode recovery (trr = 33ns at 25°C).

For engineers reviewing the IRFS3307ZTRRPBF datasheet, IRFS3307ZTRRPBF pinout, IRFS3307ZTRRPBF application, or IRFS3307ZTRRPBF equivalent, key selection criteria include RDS(on) stability over temperature, body diode dV/dt capability (≥1.5V/ns), gate charge profile (Qg = 79nC typ.), and thermal resistance (RθJC = 0.65°C/W) for high-current PCB-mount designs.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted charge balance to achieve simultaneous low RDS(on) and high dv/dt immunity. Its body diode is engineered for soft recovery (Qrr = 42nC typ., IRRM = 2.2A) and high dI/dt tolerance (≤1570A/μs under specified conditions).

The device operates with VGS(th) = 2.0–4.0V and exhibits positive temperature coefficient for RDS(on), enabling inherent current sharing in paralleled configurations. Gate drive requires 10V for full conduction, with internal RG = 0.70Ω supporting controlled switching transitions without external gate resistors in many applications.

Key Specifications

Pinout & Package

IRFS3307ZTRRPBF uses the TO-262 (I²PAK) package: isolated drain tab, surface-mount compatible with through-hole footprint, 3-pin single-row configuration. Thermal pad on drain connects directly to PCB copper for low-impedance heat path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-ruggedness power MOSFET applications.

Compared with STL220N7F7AG and IXFH120N075T2, IRFS3307ZTRRPBF delivers optimal balance of low RDS(on), moderate Qg, and proven avalanche performance in TO-262-a preferred choice for space-constrained, high-reliability SMPS where thermal management is achievable via PCB copper.

Availability

IRFS3307ZTRRPBF is available at Aetrix Electronics and suitable for high-efficiency server SMPS, online UPS inverter stages, and industrial motor drive half-bridges requiring stable component supply across multi-year production cycles.

Supply support for IRFS3307ZTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers.

This device belongs to the HEXFET® Power MOSFET product line, designed specifically for high-frequency, high-current switching in industrial power supplies, UPS systems, and motor control inverters where ruggedness and thermal efficiency are paramount.

FAQ

Is IRFS3307ZTRRPBF suitable for surface-mount assembly?

Yes-IRFS3307ZTRRPBF uses the TO-262 (I²PAK) package, which is explicitly qualified for surface-mount reflow soldering per JEDEC J-STD-020. Its isolated drain tab allows direct thermal connection to inner-layer copper pours, and the datasheet provides recommended footprint dimensions and thermal relief patterns in Application Note AN-994.

What is the maximum safe operating frequency for hard-switched applications?

Based on measured tr = 64ns and tf = 65ns with RG = 2.6Ω, the device supports hard-switched operation up to 500kHz while maintaining <10% switching loss contribution. Above this, gate drive optimization and layout parasitic minimization become critical-designs exceeding 1MHz require evaluation using the provided Ciss/Coss/Crss values and SPICE models from Infineon's website.

Does the body diode support bidirectional current flow in bridge configurations?

Yes-the intrinsic p-n body diode conducts source-to-drain current (IS = 128A continuous) and supports reverse recovery (trr = 33ns). In H-bridge or half-bridge topologies, it enables freewheeling paths during dead-time intervals. However, its VSD = 1.3V necessitates synchronous gate control for optimal efficiency in high-current rectification.

How does RDS(on) change with junction temperature?

RDS(on) increases linearly with temperature: normalized to 1.0× at 25°C, it reaches ~2.2× at 175°C (per Fig. 4). At 100°C junction, RDS(on) ≈ 1.7× typical value (7.8mΩ), increasing conduction loss proportionally. Thermal design must therefore maintain TJ < 125°C for sustained 120A operation to avoid excessive heating.