Infineon Technologies IRFS4410PBF

Overview

IRFS4410PBF from Infineon Technologies (formerly International Rectifier) is a 100V, 88A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, featuring 8.0 mΩ typical R_DS(on), 120 nC total gate charge, and enhanced body diode dV/dt/dI/dt capability. It is engineered for high-efficiency synchronous rectification in SMPS and hard-switched high-frequency power conversion stages.

For engineers reviewing the IRFS4410PBF datasheet, IRFS4410PBF pinout, IRFS4410PBF application, or IRFS4410PBF equivalent, key selection criteria include its 100V V_DSS, 8.0 mΩ R_DS(on) at V_GS = 10V, 38 ns typical reverse recovery time (t_rr), robust unclamped inductive switching (UIS) rating of 300 mJ, and thermal resistance R_θJC = 0.61 °C/W - critical for high-current, thermally constrained designs.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell layout to achieve low conduction loss and fast switching performance. Its body diode is specifically characterized for high dI/dt (≤650 A/µs) and dV/dt ruggedness, enabling reliable operation in synchronous rectifier topologies without external Schottky diodes.

The device's dynamic parameters - including C_iss = 5150 pF, C_oss(eff, TR) = 500 pF, and Q_gd/Q_gs ratio of ~1.4 - support stable gate drive in high-frequency converters up to 500 kHz. Avalanche energy rating (E_AS = 300 mJ) is thermally limited and validated per JEDEC JESD24-11.

Key Specifications

Pinout & Package

IRFS4410PBF uses the standard TO-220AB package with isolated tab (drain-connected), offering mechanical robustness and straightforward heatsinking. The three-terminal configuration supports high-current PCB mounting with screw-down thermal interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFS4410PBF, STP110N10F7 offers lower on-resistance but sacrifices thermal isolation and requires gate drive recalibration, while IXTH110N10L2 delivers higher avalanche immunity at the expense of board space and thermal interface compatibility - making IRFS4410PBF the optimal balance for TO-220-based high-reliability SMPS designs.

Availability

IRFS4410PBF is available at Aetrix Electronics and suitable for server power supplies, uninterruptible power systems, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for IRFS4410PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

IRFS4410PBF belongs to the HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability power conversion in industrial, computing, and renewable energy systems where ruggedness and thermal performance are critical.

FAQ

Is IRFS4410PBF suitable for synchronous rectification in LLC resonant converters?

Yes. With 38 ns typical reverse recovery time (t_rr) and characterized body diode dV/dt capability (>10 V/ns), IRFS4410PBF supports ZVS-assisted synchronous rectification in LLC topologies up to 300 kHz. Its low Q_gd/Q_gs ratio ensures stable gate control during diode commutation, minimizing shoot-through risk.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies 63 A continuous drain current at T_C = 100°C and V_GS = 10 V. This value is thermally limited by junction temperature (T_J(max) = 175°C) and accounts for R_θJC = 0.61 °C/W and ambient thermal conditions - not package current rating alone.

Does IRFS4410PBF have a fully rated avalanche capability?

Yes. It is fully characterized for single-pulse unclamped inductive switching (UIS) with E_AS = 300 mJ at T_J = 25°C, tested per JEDEC JESD24-11. Repetitive avalanche is permitted within defined limits: I_AR ≤ 58 A, pulse width ≤ 400 µs, duty cycle ≤ 2%, and T_J ≤ 175°C.

Can IRFS4410PBF be mounted directly to a heatsink without electrical isolation?

No. The TO-220AB package has an electrically connected drain tab. Direct mounting to a grounded heatsink creates a short circuit unless an isolating pad (e.g., mica or silicone film) and shoulder washer are used. Thermal resistance increases by ~0.2–0.3 °C/W with standard isolators.