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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS7430TRLPBF

Name: IRFS7430TRLPBF
Brand: Infineon Technologies
SKU: IRFS7430TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS7430TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS7430TRLPBF.pdf

Description:: MOSFET N-CH 40V 195A D2PAK

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Product details

Overview

IRFS7430TRLPBF from Infineon Technologies is a 40 V, 195 A (package-limited), N-channel D2PAK-7L HEXFET® Power MOSFET with 0.97 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-current synchronous rectification and half-bridge switching in DC/DC converters and BLDC motor drives.

For engineers reviewing the IRFS7430TRLPBF datasheet, IRFS7430TRLPBF pinout, IRFS7430TRLPBF application, or IRFS7430TRLPBF equivalent, key selection criteria include its 1.2 mΩ max R_DS(on), 460 nC total gate charge, 2130 pF C_oss, 1524 A pulsed source current capability, and enhanced body diode dI/dt ruggedness up to 990 A/μs.

Technical Context

This MOSFET employs planar silicon technology with optimized trench-assisted cell layout to achieve low conduction loss while maintaining robust unclamped inductive switching (UIS) performance-rated for 760 mJ single-pulse avalanche energy at T_J = 25°C. Its gate threshold voltage (2.2–3.9 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers.

The device features a fully characterized SOA curve up to 100 μs pulse width, validated avalanche operation under repetitive conditions, and a body diode with 52 ns reverse recovery time and 97 nC Q_rr at 100 A, supporting fast commutation in resonant and hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage compatible with 12 V/24 V/36 V battery systems and 48 V intermediate bus architectures.
R_DS(on) typ.	0.97 mΩ @ V_GS = 10 V, I_D = 100 A - Enables <1.0 W conduction loss at 100 A, critical for high-efficiency power stages.
I_D (package)	195 A @ T_C = 25°C - Limited by bond wire capacity; defines maximum continuous current under PCB-mount thermal conditions.
Q_g	300–460 nC - High gate charge necessitates robust gate driver (≥2 A peak) but supports stable operation in high-dV/dt noise environments.
C_oss eff. (ER)	2605 pF - Energy-related output capacitance directly impacts turn-off loss and ZVS transition behavior in resonant converters.
V_SD	0.86–1.2 V @ I_S = 100 A - Low forward voltage of integrated body diode reduces conduction loss during freewheeling in synchronous rectifiers.
E_AS	760 mJ - Single-pulse avalanche energy rating confirms ruggedness against inductive switching transients without external snubbers.

Pinout & Package

IRFS7430TRLPBF is housed in a surface-mount D2PAK-7L (TO-263-7L) package with exposed drain pad for low thermal resistance (R_θJC = 0.40°C/W). The 7-pin configuration includes three parallel source terminals, two parallel gate pads, and one large drain tab for high-current routing and thermal dissipation.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1, 2, 3 (S)	Source (common)	Three paralleled source terminals reduce source inductance and improve current sharing in high-di/dt switching.
Pin 4, 5 (G)	Gate input	Dual gate pads enable low-inductance gate loop routing and support Kelvin-source gate drive for precise threshold control.
Pin 6, 7 (D)	Drain (exposed pad)	Large copper drain tab serves as primary heat path to PCB and provides low-inductance high-current return path.

Key Features

Feature	Design Value
Enhanced body diode dI/dt capability	Rated for 990 A/μs - Enables reliable operation in high-frequency synchronous rectification without oscillation or snap-off failure.
Fully characterized avalanche SOA	Validated for repetitive UIS events up to 150°C starting junction temperature - eliminates need for derating in motor drive fault conditions.
Low C_oss eff. (TR)	2920 pF - Reduces turn-off delay and improves ZVS initiation margin in LLC and phase-shifted full-bridge converters.
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 moisture sensitivity level 1 - supports lead-free reflow without popcorn cracking or delamination.
Improved dynamic dV/dt ruggedness	Rated > 2.7 V/ns diode recovery dv/dt - suppresses false turn-on in high-side configurations with fast bus transients.

Applications

Brushed Motor Drive

BLDC Motor Inverter

Use Scenario: H-bridge driver for cordless power tools operating from 18–36 V Li-ion packs with peak currents >150 A.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase PWM-controlled bridge, handling bidirectional current with body diode freewheeling.

Use Value: 0.97 mΩ R_DS(on) limits conduction loss to <2.2 W at 150 A, enabling compact heatsink design and >97% efficiency at rated load.

Use Scenario: Upper-leg switch in 3-phase BLDC inverter for e-bike controller, switching at 20 kHz with 120° commutation.

IC Role / Device Role / Timing Role: High-current, high-dV/dt switching element requiring robust gate drive and fast body diode recovery.

Use Value: 52 ns t_rr and 97 nC Q_rr minimize commutation loss and EMI during phase transitions, reducing filter component count.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side switch in 48 V → 12 V isolated DC/DC converter for telecom shelf power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce forward drop and improve light-load efficiency.

Use Value: 0.86 V V_SD at 100 A cuts conduction loss by >60% vs. 0.5 V Schottky, increasing full-load efficiency from 93% to 95.8%.

Use Scenario: Redundant 48 V input OR-ing circuit in server PSU with hot-swap capability and reverse-current blocking.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET providing low-loss forward conduction and fast reverse-blocking response.

Use Value: 195 A continuous current rating and 1524 A pulsed source current support >200 A system-level redundancy with <1.5 mΩ effective on-resistance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A, R_DS(on) = 0.75 mΩ typ., DFN8 5×6 mm package, no exposed drain pad	Limited to ≤120 A continuous due to higher R_θJA; unsuitable for high-power TO-263 footprint replacement	Select when board space is constrained and thermal interface to heatsink is not required.
IXFH70N40P3	400 V, 70 A, R_DS(on) = 22 mΩ, TO-247 package, higher voltage rating but lower current density	Designed for 380 V DC bus; excessive V_DSS margin increases gate charge and cost for 48 V systems	Choose only if system requires 400 V blocking or legacy TO-247 mechanical compatibility.

Compared with STL220N4F7AG and IXFH70N40P3, IRFS7430TRLPBF uniquely balances ultra-low R_DS(on), high package current rating, and D2PAK-7L thermal performance-making it optimal for 48 V automotive and industrial power stages where both conduction loss and thermal management are critical.

Availability

IRFS7430TRLPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifiers requiring stable component supply across production ramps and long-life industrial programs.

Supply support for IRFS7430TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in battery-powered and industrial power conversion systems.

FAQ

What is the maximum continuous drain current for IRFS7430TRLPBF at 100°C case temperature?

The maximum continuous drain current is 301 A at T_C = 100°C under silicon-limited conditions, but the practical limit is 195 A due to bond wire current capacity. This value assumes proper PCB copper area (1" square FR-4) and is validated per Figure 2 in the datasheet.

Does IRFS7430TRLPBF support Kelvin-source gate drive?

Yes-the D2PAK-7L package provides separate gate and source terminals (Pins 4/5 for gate, Pins 1/2/3 for source), enabling true Kelvin-source connection to eliminate source inductance effects and stabilize switching waveforms in high-di/dt applications.

Can IRFS7430TRLPBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (R_DS(on) increases with junction temperature) ensures inherent current sharing. Parallel operation requires matched gate drive impedance and symmetrical PCB layout to balance dynamic current distribution.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

A 2.7 Ω gate resistor is specified in the datasheet for UIS testing and provides optimal trade-off between switching speed (t_d(off) ≈ 160 ns) and ringing suppression. For 100 kHz hard-switching, use 2.2–3.3 Ω with active Miller clamp to prevent false turn-on.

IRFS7430TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 460 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS7430TRLPBF FAQ

1.How can I place an order for IRFS7430TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7430TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7430TRLPBF reliable?

The price and inventory of IRFS7430TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7430TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFS7430TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7430TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7430TRLPBF?

IRFS7430TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7430TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7430TRLPBF?

For technical support, including IRFS7430TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7430TRLPBF requirements.

6.How does Aetrix verify that IRFS7430TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFS7430TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7430TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFS7430TRLPBF?

All IRFS7430TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7430TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7430TRLPBF part is unused and in its original packaging.

Return procedure for IRFS7430TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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