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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS7434TRLPBF

Name: IRFS7434TRLPBF
Brand: Infineon Technologies
SKU: IRFS7434TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS7434TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS7434TRLPBF.pdf

Description:: MOSFET N-CH 40V 195A D2PAK

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Product details

Overview

IRFS7434TRLPBF from Infineon Technologies is a 40 V, 195 A (package-limited), D2Pak-packaged N-channel HEXFET Power MOSFET with 1.25 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-current synchronous rectification and half-bridge motor drive topologies in battery-powered systems.

For engineers reviewing the IRFS7434TRLPBF datasheet, IRFS7434TRLPBF pinout, IRFS7434TRLPBF application, or IRFS7434TRLPBF equivalent, key selection criteria include its 1.25 mΩ on-resistance, 195 A continuous drain rating at T_C = 25°C, enhanced body diode dV/dt and dI/dt capability, and avalanche-rated operation up to 490 mJ single-pulse energy.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell layout to achieve low R_DS(on) while maintaining robust unclamped inductive switching (UIS) performance. Its gate charge profile (Q_g = 216 nC typ.) supports fast switching in resonant and hard-switched DC/DC converters.

The integrated body diode features 38 ns reverse recovery time (T_J = 25°C) and 50 nC Q_rr, enabling reliable operation in synchronous rectifier and OR-ing applications where reverse recovery stress must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 12–24 V battery systems.
R_DS(on) typ.	1.25 mΩ @ V_GS = 10 V, T_J = 25°C - Enables <1.3 W conduction loss at 100 A, critical for thermal management in compact power stages.
I_D (package)	195 A @ T_C = 25°C - Determined by bond wire current limit; sets practical maximum continuous current in PCB-mounted D2Pak layouts.
E_AS	490 mJ - Single-pulse avalanche energy rating; allows safe operation under inductive turn-off transients without external snubbers.
Q_g	216 nC - Total gate charge required for full enhancement; determines driver strength requirement and switching loss trade-off.
t_rr	38 ns - Body diode reverse recovery time at T_J = 25°C; enables high-frequency synchronous rectification up to ~200 kHz.
R_θJC	0.5 °C/W - Junction-to-case thermal resistance; permits direct heatsink mounting for high-power density designs.

Pinout & Package

IRFS7434TRLPBF is housed in a surface-mount D2Pak (TO-263) package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
G	Control input	Accepts 10 V gate drive to fully enhance channel; threshold voltage 2.2–3.9 V ensures TTL/CMOS compatibility with margin.
D	High-current output node	Connected to internal silicon die and exposed copper pad; carries full load current and dissipates heat directly to heatsink.
S	Reference return path	Common source node for gate drive reference and current sensing; low-inductance layout essential for stable switching.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	5.0 V/ns - Prevents spurious turn-on during high-speed voltage transitions in bridge configurations.
Dynamic dV/dt ruggedness	Characterized per JEDEC JESD22-A114 - Ensures reliable operation under fast-rising bus transients without latch-up.
Lead-free and RoHS compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 - Supports lead-free reflow without popcorn cracking risk.
Full SOA characterization	Includes UIS, switching, and linear-mode Safe Operating Area curves - Enables confident design in hard-switched and resonant topologies.

Applications

Brushed Motor Drive

BLDC Motor Drive

Use Scenario: H-bridge control of 24 V DC brushed motors in power tools and robotics.

IC Role / Device Role / Timing Role: Low-side and high-side switch in PWM-controlled half-bridge legs.

Use Value: 1.25 mΩ R_DS(on) minimizes I²R losses at 100+ A peak currents, extending battery runtime and reducing heatsink size.

Use Scenario: Six-step commutation in 48 V BLDC inverters for e-bikes and HVAC fans.

IC Role / Device Role / Timing Role: High-current phase-leg switch handling 150 A peak currents with fast switching.

Use Value: 38 ns t_rr and 139 nC Q_sync enable clean dead-time control and reduced shoot-through risk.

Synchronous Rectification

OR-ing Power Switch

Use Scenario: Secondary-side switching in 48 V → 12 V isolated DC/DC converters for telecom systems.

IC Role / Device Role / Timing Role: Active replacement of Schottky diode in forward/flyback secondary.

Use Value: 0.9 V V_SD body diode forward drop and low Q_rr reduce conduction and switching losses vs. discrete diodes.

Use Scenario: Redundant 24 V power supply combining in industrial PLC backplanes.

IC Role / Device Role / Timing Role: Unidirectional current path with reverse-blocking and low forward drop.

Use Value: 195 A continuous rating and 490 mJ E_AS support hot-swap insertion and fault current limiting without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1407PbF	R_DS(on) = 4.8 mΩ (higher), I_D = 130 A (lower), same D2Pak package	Lower current density; suitable only for ≤80 A continuous loads	Select when lower gate charge (71 nC) and cost sensitivity outweigh on-resistance penalty.
STL220N4F7AG	R_DS(on) = 1.15 mΩ (slightly lower), 40 V rating, D2PAK-7L package with Kelvin source	Improved gate drive stability via separate Kelvin source; requires 7-pin layout	Select for ultra-low-noise gate drive in high-frequency ZVS/ZCS converters where layout complexity is acceptable.

Compared with IRF1407PbF, IRFS7434TRLPBF delivers 3.8× lower conduction loss at 100 A but demands higher gate drive energy; versus STL220N4F7AG, it lacks Kelvin source but offers broader industry footprint compatibility and proven avalanche robustness in unclamped inductive loads.

Availability

IRFS7434TRLPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across automotive-grade production, industrial automation, and renewable energy power conversion programs.

Supply support for IRFS7434TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in demanding power conversion and motor control applications.

FAQ

What is the maximum continuous drain current for IRFS7434TRLPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 127 A, derived from thermal derating of the 195 A rating at 25°C using the 1.96 W/°C linear derating factor. This value reflects package-limited current under sustained thermal conditions and assumes adequate heatsinking.

Does IRFS7434TRLPBF support gate drive voltages below 10 V?

Yes - the gate threshold voltage (V_GS(th)) ranges from 2.2 V to 3.9 V, enabling partial enhancement at 5 V logic levels. However, full conduction (R_DS(on) ≤ 1.6 mΩ) requires ≥10 V gate drive; operation at 6–8 V yields higher on-resistance and increased conduction loss.

How is the body diode performance characterized in this MOSFET?

The body diode is fully characterized for reverse recovery: t_rr = 38 ns, Q_rr = 50 nC, and I_RRM = 1.9 A at T_J = 25°C, with dv/dt capability rated at 5.0 V/ns. These parameters are measured under standardized conditions (V_R = 34 V, I_F = 100 A, di/dt = 100 A/μs) and validated across temperature.

Can IRFS7434TRLPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (1.4× increase from 25°C to 175°C) enables inherent current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling; gate resistors ≥2.7 Ω are recommended to damp oscillations.

IRFS7434TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.6mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 324 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10820 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 294W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS7434TRLPBF FAQ

1.How can I place an order for IRFS7434TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7434TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7434TRLPBF reliable?

The price and inventory of IRFS7434TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7434TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFS7434TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7434TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7434TRLPBF?

IRFS7434TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7434TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7434TRLPBF?

For technical support, including IRFS7434TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7434TRLPBF requirements.

6.How does Aetrix verify that IRFS7434TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFS7434TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7434TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFS7434TRLPBF?

All IRFS7434TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7434TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7434TRLPBF part is unused and in its original packaging.

Return procedure for IRFS7434TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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