Infineon Technologies IRFS7534TRLPBF

Overview

IRFS7534TRLPBF from Infineon Technologies is a 60V, 2.0 mΩ typ. N-channel D2PAK-2 (TO-263) Power MOSFET optimized for high-current synchronous rectification and half/full-bridge motor drive topologies. It delivers 195A package-limited continuous drain current at 25°C, features 186 nC total gate charge, and supports avalanche energy up to 373 mJ (single-pulse), enabling robust operation in BLDC inverters and resonant DC/DC converters.

For engineers reviewing the IRFS7534TRLPBF datasheet, IRFS7534TRLPBF pinout, IRFS7534TRLPBF application, or IRFS7534TRLPBF equivalent, key selection criteria include R_DS(on) vs. temperature stability, dV/dt ruggedness of the body diode, SOA compliance in unclamped inductive switching, and thermal resistance (R_θJC = 0.51°C/W) for high-power PCB-mount designs.

Technical Context

This MOSFET employs HEXFET® silicon with enhanced body diode dI/dt capability (up to 1135 A/µs) and improved dynamic dV/dt ruggedness-critical for fast-switching bridge legs where commutation-induced voltage transients occur. Its fully characterized avalanche SOA and thermally limited E_AS rating ensure reliable operation under repetitive unclamped inductive load conditions.

The device uses standard gate drive logic (V_GS(th) = 2.1–3.7 V) and exhibits low C_iss (10,034 pF) and C_oss (921 pF) at V_DS = 25 V, supporting efficient high-frequency switching in hard- and soft-switched topologies including LLC resonant converters and OR-ing power supplies.

Key Specifications

Pinout & Package

IRFS7534TRLPBF is housed in a D2PAK-2 (TO-263-2L) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard D2PAK footprint: Gate (left lead), Drain (center pad + tab), Source (right lead).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Compared with STL220N6F7, IRFS7534TRLPBF offers 10% lower R_DS(on) and 2× higher avalanche energy, making it preferable for ruggedized motor drives; versus IXFH70N60X3, its 2.0 mΩ R_DS(on) enables >5× higher current density in 48 V systems, justifying use despite lower voltage rating.

Availability

IRFS7534TRLPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, synchronous rectifiers, and OR-ing power supplies requiring stable component supply across industrial, transportation, and telecom power systems.

Supply support for IRFS7534TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This device belongs to the StrongIRFET™ HEXFET® family, engineered specifically for high-efficiency, high-reliability power conversion in motor drives, UPS, and telecom infrastructure where low R_DS(on), robust avalanche behavior, and thermal performance are critical.

FAQ

What is the maximum continuous drain current for IRFS7534TRLPBF at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 164 A (silicon-limited) per the Absolute Maximum Ratings table. This reflects thermal derating from the 195 A package limit at 25°C, governed by R_θJC = 0.51°C/W and maximum junction temperature of 175°C.

Does IRFS7534TRLPBF support gate drive from a 3.3 V microcontroller directly?

No. With V_GS(th) ranging from 2.1–3.7 V and requiring 10 V for full enhancement (R_DS(on) = 2.0 mΩ), direct 3.3 V drive results in high R_DS(on) (>20 mΩ) and excessive conduction loss. A gate driver IC or level-shifting circuit is mandatory for reliable switching.

How is the body diode recovery performance quantified for this MOSFET?

The body diode is characterized with trr = 46 ns (T_J = 25°C), Q_rr = 71 nC, and peak recovery dv/dt = 9.2 V/ns at T_J = 175°C. These values are measured under IF = 100 A, V_R = 51 V, and di/dt = 100 A/µs, confirming suitability for high-di/dt freewheeling in synchronous rectifier applications.

Is IRFS7534TRLPBF suitable for use in a Class D audio amplifier output stage?

While electrically capable of high-frequency switching, IRFS7534TRLPBF is not optimized for audio-class linearity or low gate charge variation across V_GS. Its Q_g = 186 nC and C_iss = 10,034 pF introduce significant Miller effect at >200 kHz, and lack of specified SOA in linear region makes it unsuitable for analog Class D output stages without extensive characterization.