Infineon Technologies IRFS7730TRLPBF

Overview

IRFS7730TRLPBF from Infineon Technologies (formerly International Rectifier) is a 75V, 2.2 mΩ typ. N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, rated for 195A continuous drain current (package-limited) and 246A silicon-limited operation at 25°C. It delivers high-current switching in half-bridge and synchronous rectifier topologies for motor drives and DC/DC converters.

For engineers reviewing the IRFS7730TRLPBF datasheet, IRFS7730TRLPBF pinout, IRFS7730TRLPBF application, or IRFS7730TRLPBF equivalent, key selection criteria include its 2.6 mΩ max R_DS(on) at V_GS = 10 V, 407 nC max total gate charge, 1120 pF typical C_oss, robust 465 mJ single-pulse avalanche energy, and enhanced body diode dI/dt capability up to 1626 A/µs.

Technical Context

This device employs trench-gate HEXFET® technology optimized for low conduction loss and fast switching in hard-switched and resonant-mode power stages. Its gate threshold voltage (2.1–3.7 V) enables compatibility with standard 5 V and 10 V logic-level drivers, while the 2.1 Ω typical gate resistance supports controlled turn-on/turn-off timing without external gate resistors in many designs.

The MOSFET features fully characterized dynamic parameters including 192 nC typical Q_sync (Q_g – Q_gd) and 79 nC typical Q_gd, enabling accurate loss modeling in bridge configurations. Its 0.40 °C/W junction-to-case thermal resistance and 40 °C/W junction-to-ambient (PCB mount) rating support high-power density thermal management in compact industrial and automotive-grade layouts.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration with Gull-wing leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Compared with STL220N7F7AG and IXTH180N075L2, IRFS7730TRLPBF offers balanced performance: superior avalanche ruggedness versus the DFN part and significantly smaller footprint than the TO-247 alternative-ideal for cost-sensitive, thermally demanding motor drive modules.

Availability

IRFS7730TRLPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifiers requiring stable component supply across production ramps and long-life industrial programs.

Supply support for IRFS7730TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

This device belongs to the StrongIRFET™ family of high-current trench-MOSFETs engineered for rugged, high-efficiency switching in motor control and power conversion systems up to 10 kW.

FAQ

What is the maximum continuous drain current for IRFS7730TRLPBF at 100°C case temperature?

The maximum continuous drain current is 174 A at T_C = 100°C (silicon-limited), as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to junction-to-case thermal resistance (0.40 °C/W) and maximum allowable junction temperature of 175°C. The package-limited rating drops to 195 A only at T_C = 25°C.

Does IRFS7730TRLPBF require a negative gate voltage for reliable turn-off in high-noise environments?

No. The device has a gate threshold voltage range of 2.1–3.7 V and is fully enhanced at V_GS = 10 V. While a negative gate bias (e.g., –5 V) improves noise immunity, it is not required-standard 0 V/10 V gate drive suffices for most motor drive and converter applications per the datasheet's tested dV/dt ruggedness specification.

Can IRFS7730TRLPBF be used in parallel configurations without current-sharing resistors?

Yes-its positive R_DS(on) temperature coefficient (normalized R_DS(on) increases with junction temperature, per Fig 6) provides inherent thermal current balancing. Parallel operation is validated in application note AN-1140; however, matched layout symmetry and gate drive impedance are mandatory to ensure equal dynamic current distribution during switching transitions.

What is the recommended PCB footprint and thermal pad design for IRFS7730TRLPBF?

Per Infineon application note AN-994, use a minimum 1.0" × 1.0" (25.4 mm × 25.4 mm) copper area on the primary layer, connected to inner-layer thermal planes via ≥12 thermal vias (0.3 mm diameter). The exposed drain pad must be soldered directly to this copper; solder mask should be removed from the entire pad area to maximize thermal transfer and mechanical adhesion.