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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS7734TRLPBF

Name: IRFS7734TRLPBF
Brand: Infineon Technologies
SKU: IRFS7734TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS7734TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS7734TRLPBF.pdf

Description:: MOSFET N-CH 75V 183A D2PAK

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Product details

Overview

IRFS7734TRLPBF from Infineon Technologies (formerly International Rectifier) is a 75V, 183A N-channel enhancement-mode HEXFET® Power MOSFET in D2-Pak (TO-263) package, optimized for high-current switching in motor drives and DC/DC converters. It delivers 2.8 mΩ typical R_DS(on) at V_GS = 10 V, supports 650 A pulsed drain current, and features enhanced body diode dV/dt and dI/dt capability for robust synchronous rectification in half-bridge topologies.

For engineers reviewing the IRFS7734TRLPBF datasheet, IRFS7734TRLPBF pinout, IRFS7734TRLPBF application, or IRFS7734TRLPBF equivalent, key selection criteria include its 75 V V_DS, 2.8 mΩ R_DS(on), 180–270 nC total gate charge, avalanche-rated 350–670 mJ energy handling, and D2-Pak thermal performance with R_θJC = 0.51 °C/W.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell layout to achieve low on-resistance while maintaining high avalanche ruggedness and fast, controlled body diode recovery. Its gate threshold voltage (2.1–3.7 V) and transconductance (250 S typ.) support stable turn-on across temperature and load conditions.

The device is characterized for unclamped inductive switching (UIS) with thermally limited single-pulse avalanche energy up to 670 mJ and repetitive avalanche capability under defined duty cycles. Dynamic parameters-including 55 nC Q_gd, 123 ns t_r, and 100 ns t_f-are specified at V_DD = 38 V, I_D = 100 A, and R_G = 2.7 Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage for 48 V bus systems with 50% safety margin against transients.
R_DS(on) max	3.5 mΩ @ V_GS = 10 V, I_D = 100 A - Enables <1.8 W conduction loss at 100 A, critical for high-efficiency motor inverters.
I_D continuous	183 A @ T_C = 25°C - Supports high-power brushed/BLDC motor drive stages without parallel devices.
Q_g typ.	180 nC - Determines gate driver power requirement; compatible with standard 2–3 A peak gate drivers.
E_AS	350 mJ (thermally limited) - Withstands single-pulse inductive energy spikes in hard-switched bridge legs.
t_r/t_f	123 ns / 100 ns - Fast switching reduces overlap losses in synchronous rectifiers and resonant converters.
V_SD	1.2 V @ I_S = 100 A - Low forward drop improves efficiency in OR-ing and reverse-conduction applications.

Pinout & Package

IRFS7734TRLPBF uses the D2-Pak (TO-263) surface-mount package with exposed drain pad for low thermal resistance (R_θJC = 0.51 °C/W) and high-current PCB routing. The three-terminal configuration supports high-density power stage layouts.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path collector	Internally connected to large copper tab; must be soldered to thermal pad for rated power dissipation.
Source (S)	Current return and reference node	Provides low-inductance return path; ties to power ground plane in half-bridge configurations.
Gate (G)	Control terminal	High-impedance input requiring <2.0 Ω series resistance to damp ringing during fast switching.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	5.1 V/ns at T_J = 175°C - Prevents false turn-on during high-speed commutation in BLDC and inverter applications.
Fully characterized avalanche SOA	670 mJ single-pulse E_AS at T_J = 25°C - Enables reliable operation in unclamped inductive switching without external snubbers.
Low C_oss eff. (ER)	707 pF - Reduces capacitive turn-off loss and improves zero-voltage switching (ZVS) margin in resonant topologies.
Lead-free, RoHS-compliant construction	Meets IPC/JEDEC J-STD-020D reflow profile - Compatible with standard lead-free assembly processes up to 260°C peak.

Applications

Brushed Motor Drive

BLDC Inverter Stage

Use Scenario: High-current H-bridge for cordless power tools operating from 36–48 V battery packs.

IC Role / Device Role / Timing Role: High-side and low-side switch in dual-phase half-bridge configuration, switching at 20–50 kHz.

Use Value: 2.8 mΩ R_DS(on) minimizes I²R heating during stall conditions; 183 A rating avoids derating at ambient >60°C.

Use Scenario: 3-phase inverter driving 500 W–2 kW permanent-magnet BLDC motors in HVAC blowers and e-bike controllers.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack inverter module, conducting freewheeling current via integrated body diode.

Use Value: 5.1 V/ns dV/dt immunity prevents shoot-through during high di/dt commutation; 47 ns t_rr limits reverse recovery loss.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side switch in isolated 48 V–12 V DC/DC converter for telecom and server power supplies.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode, driven synchronously with primary-side PWM.

Use Value: 1.2 V V_SD and 2.8 mΩ R_DS(on) reduce conduction loss by >40% vs. 40 V Schottky; low Q_gd/Q_g ratio improves control stability.

Use Scenario: Redundant 48 V input OR-ing circuit in industrial PLC backplanes with hot-swap capability.

IC Role / Device Role / Timing Role: Forward-conducting MOSFET enabling seamless switchover between two independent power sources.

Use Value: Low R_DS(on) ensures <10 mV drop at 100 A, minimizing heat generation and voltage imbalance; avalanche rating handles load dump transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N7F7AG	75 V, 220 A, 2.2 mΩ R_DS(on), DFN8 5×6 mm package, lower R_θJA but no TO-263 footprint	Better thermal performance on 2-layer PCB; unsuitable for through-hole legacy designs or heatsink mounting	Select when board space is constrained and PCB thermal design supports DFN8; avoid if mechanical mounting to heatsink is required.
IXFH76N75X3	75 V, 76 A, 5.5 mΩ R_DS(on), TO-247 package, higher R_DS(on) but superior UIS rating (1000 mJ)	Lower current density; preferred for ultra-high-reliability aerospace or military applications with extreme transient stress	Select only when avalanche energy margin >670 mJ is mandatory and 183 A rating is not required; otherwise over-spec'd and costlier.

Compared with STL220N7F7AG and IXFH76N75X3, IRFS7734TRLPBF uniquely balances high current (183 A), low R_DS(on) (2.8 mΩ), and D2-Pak mountability-making it optimal for industrial motor drives where thermal interface to heatsink and legacy PCB compatibility are critical.

Availability

IRFS7734TRLPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifiers requiring stable component supply across automotive aftermarket, industrial automation, and renewable energy power conversion programs.

Supply support for IRFS7734TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap technologies.

This device belongs to the StrongIRFET™ family of high-current silicon MOSFETs, engineered specifically for high-efficiency, high-reliability power conversion in motor control and industrial switching applications.

FAQ

What is the maximum junction temperature for continuous operation?

The IRFS7734TRLPBF has an operating junction temperature range of –55°C to +175°C. For continuous operation, thermal design must ensure T_J does not exceed 175°C under worst-case ambient, power dissipation, and heatsink conditions. Derating begins above T_C = 100°C, where continuous I_D drops to 130 A.

Is IRFS7734TRLPBF suitable for synchronous rectification in LLC resonant converters?

Yes-its 1.2 V V_SD, 47 ns t_rr, and 5.1 V/ns dV/dt rating make it well-suited for secondary-side synchronous rectification in LLC converters operating up to 500 kHz. Gate drive timing must account for Q_gd = 55 nC to prevent cross-conduction during dead-time transitions.

Does this part require a gate resistor for safe operation?

Yes-a series gate resistor (typically 1.5–3.3 Ω) is required to damp high-frequency oscillation caused by gate-drain capacitance and PCB inductance. Without it, ringing can exceed ±20 V gate rating and cause erratic switching or device failure, especially at I_D > 50 A and dV/dt > 10 V/ns.

How does the avalanche rating compare between single-pulse and repetitive conditions?

Single-pulse avalanche energy is 350 mJ (T_J start = 25°C) or 670 mJ (T_J start = 25°C, L = 1 mH). Repetitive avalanche is permitted only within SOA limits shown in Figure 16: at 1% duty cycle, max E_AR ≈ 40 mJ/pulse; sustained operation requires thermal modeling to ensure ΔT_J stays below 150°C per pulse.

IRFS7734TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 183A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 270 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10150 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 290W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IRFS7734TRLPBF FAQ

1.How can I place an order for IRFS7734TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7734TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7734TRLPBF reliable?

The price and inventory of IRFS7734TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7734TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFS7734TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7734TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7734TRLPBF?

IRFS7734TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7734TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7734TRLPBF?

For technical support, including IRFS7734TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7734TRLPBF requirements.

6.How does Aetrix verify that IRFS7734TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFS7734TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7734TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFS7734TRLPBF?

All IRFS7734TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7734TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7734TRLPBF part is unused and in its original packaging.

Return procedure for IRFS7734TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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