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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFS9N60A

Name: IRFS9N60A
Brand: Vishay Siliconix
SKU: IRFS9N60A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS9N60A

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS9N60A.pdf

Description:: MOSFET N-CH 600V 9.2A D2PAK

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Product details

Overview

IRFS9N60A from Vishay Siliconix is a 600 V, 9.2 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring 0.75 Ω R_DS(on) at V_GS = 10 V, 49 nC total gate charge, and 290 mJ single-pulse avalanche energy - deployed as main switch in offline SMPS topologies including active-clamped forward converters.

For engineers reviewing the IRFS9N60A datasheet, IRFS9N60A pinout, IRFS9N60A application, or IRFS9N60A equivalent, this page delivers verified electrical specs, thermal performance data, body diode recovery characteristics, and real-world switching behavior under 300 V/9.2 A conditions - critical for high-reliability industrial power supply design and UPS output stage selection.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage hard-switching applications, with fully characterized C_iss (1400 pF), C_oss (180 pF), and C_rss (7.1 pF) enabling accurate snubber and gate drive loss calculation. Its 0.66 V/°C V_DS temperature coefficient ensures stable breakdown voltage across -55 °C to +150 °C operation.

The device integrates a robust intrinsic body diode with 530–800 ns reverse recovery time (t_rr) and 3.0–4.4 μC Q_rr, validated under 100 A/μs dI/dt and 9.2 A forward current - supporting reliable unclamped inductive switching in flyback and forward converter freewheeling paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 480 V DC bus designs with 25 % margin for line surges and ringing
R_DS(on) @ V_GS = 10 V	0.75 Ω - enables <1.5 W conduction loss at 5.5 A continuous drain current
Q_g	49 nC - determines gate driver peak current requirement (~500 mA for 100 ns turn-on)
E_AS	290 mJ - withstands single-pulse inductive energy without failure in unclamped tests
t_r/t_f	25 ns / 22 ns - defines minimum practical switching period for >100 kHz operation
T_J Range	-55 °C to +150 °C - qualified for industrial ambient environments with derated power above 100 °C case temperature
R_thJC	0.75 °C/W - allows 170 W dissipation at 25 °C case temperature with ≤127.5 °C junction rise

Pinout & Package

D2PAK (TO-263) package with exposed drain tab on underside for low-thermal-resistance PCB mounting; 3-pin configuration with G–D–S terminal layout matching JEDEC TO-263AB outline.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–10 V logic-level drive; 13 nC Q_gs and 20 nC Q_gd define Miller plateau timing
D (Drain)	High-side power node	Connected to exposed copper tab; carries full load current and dissipates heat directly to heatsink
S (Source)	Reference node	Common return for gate drive and load current; ties to power ground in non-isolated topologies

Key Features

Feature	Design Value
Low Q_g	49 nC total gate charge reduces gate driver complexity and switching losses in 50–200 kHz SMPS
Avalanche ruggedness	290 mJ E_AS and 9.2 A I_AR support robust operation during transient overloads without external clamping
Body diode t_rr	530–800 ns recovery time minimizes cross-conduction loss in synchronous rectification and freewheeling paths
dV/dt immunity	5.0 V/ns peak diode recovery dv/dt rating prevents false turn-on in high-noise high-side switching
Thermal resistance	0.75 °C/W R_thJC enables compact heatsink design for 100–150 W power stages

Applications

Active-Clamped Forward Converter	Offline UPS Inverter Stage
Use Scenario: Main switch in 300–400 W telecom-grade forward converter with active clamp reset. IC Role / Device Role / Timing Role: High-voltage primary-side switching element handling 400 V DC input and 10–20 A peak transformer current. Use Value: 600 V V_DS and 290 mJ E_AS ensure safe operation during clamp capacitor voltage overshoot and leakage inductance spikes.	Use Scenario: Output H-bridge switch in 1 kVA line-interactive UPS delivering clean 230 V AC during mains failure. IC Role / Device Role / Timing Role: Hard-switched power stage transistor operating at 16–20 kHz with bidirectional body diode conduction. Use Value: 9.2 A continuous ID and 530–800 ns t_rr reduce switching loss and prevent shoot-through during dead-time transitions.
Industrial Motor Drive Half-Bridge	High-Voltage DC-DC Isolated Supply
Use Scenario: Low-side switch in 48–72 V DC-fed brushless motor control with regenerative braking. IC Role / Device Role / Timing Role: Fast-turning freewheeling path for back-EMF current during PWM off-time. Use Value: 1.5 V V_SD body diode forward drop and 37 A pulsed ISM rating sustain 10 ms braking pulses without thermal runaway.	Use Scenario: Primary-side switch in 24 V input, 400 V isolated DC-DC converter for photovoltaic string monitoring. IC Role / Device Role / Timing Role: 600 V-rated power switch operating at fixed 100 kHz with zero-voltage switching assist. Use Value: 0.75 Ω R_DS(on) limits conduction loss to <1.2 W at 4.5 A RMS, enabling >92 % efficiency at full load.

Active-Clamped Forward Converter

Offline UPS Inverter Stage

Use Scenario: Main switch in 300–400 W telecom-grade forward converter with active clamp reset.

IC Role / Device Role / Timing Role: High-voltage primary-side switching element handling 400 V DC input and 10–20 A peak transformer current.

Use Value: 600 V V_DS and 290 mJ E_AS ensure safe operation during clamp capacitor voltage overshoot and leakage inductance spikes.

Use Scenario: Output H-bridge switch in 1 kVA line-interactive UPS delivering clean 230 V AC during mains failure.

IC Role / Device Role / Timing Role: Hard-switched power stage transistor operating at 16–20 kHz with bidirectional body diode conduction.

Use Value: 9.2 A continuous ID and 530–800 ns t_rr reduce switching loss and prevent shoot-through during dead-time transitions.

Industrial Motor Drive Half-Bridge

High-Voltage DC-DC Isolated Supply

Use Scenario: Low-side switch in 48–72 V DC-fed brushless motor control with regenerative braking.

IC Role / Device Role / Timing Role: Fast-turning freewheeling path for back-EMF current during PWM off-time.

Use Value: 1.5 V V_SD body diode forward drop and 37 A pulsed ISM rating sustain 10 ms braking pulses without thermal runaway.

Use Scenario: Primary-side switch in 24 V input, 400 V isolated DC-DC converter for photovoltaic string monitoring.

IC Role / Device Role / Timing Role: 600 V-rated power switch operating at fixed 100 kHz with zero-voltage switching assist.

Use Value: 0.75 Ω R_DS(on) limits conduction loss to <1.2 W at 4.5 A RMS, enabling >92 % efficiency at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK60ZFP	600 V, 8.5 A, 0.75 Ω R_DS(on), 42 nC Q_g, Superjunction Zener-protected	Lower gate charge improves light-load efficiency but reduced avalanche rating (120 mJ E_AS)	Preferable where gate drive loss dominates and surge immunity is managed externally
IXFH9N60P	600 V, 9 A, 0.85 Ω R_DS(on), 52 nC Q_g, TO-247 package	Higher R_DS(on) and larger package increase conduction loss and board area vs. D2PAK	Selected when higher thermal mass or legacy TO-247 footprint compatibility is required

Compared with STP9NK60ZFP and IXFH9N60P, the IRFS9N60A offers superior avalanche ruggedness and compact D2PAK packaging - making it optimal for space-constrained, high-surge industrial SMPS where unclamped inductive energy must be absorbed internally without external protection.

Availability

IRFS9N60A is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed power switching applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IRFS9N60A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedness for industrial and automotive markets.

The IRFS9N60A belongs to Vishay's high-voltage power MOSFET product line designed specifically for offline AC-DC conversion, UPS inverters, and industrial motor drives demanding high avalanche capability and stable parametric performance across temperature.

FAQ

What is the maximum continuous drain current rating for IRFS9N60A at 100 °C case temperature?

The IRFS9N60A supports 5.8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures junction temperature remains within the -55 °C to +150 °C operational range. At 25 °C case temperature, the rating increases to 9.2 A, and the linear derating factor is 1.3 W/°C above 25 °C.

Does IRFS9N60A have built-in gate protection or ESD safeguards?

The IRFS9N60A does not include integrated gate zener protection or ESD structures per its datasheet; it specifies ±30 V absolute maximum gate-source voltage (V_GS) and ±100 nA gate leakage at ±30 V. External gate resistors and clamping diodes are recommended in high-noise environments. Unlike some Zener-protected alternatives (e.g., STP9NK60ZFP), the IRFS9N60A relies on proper PCB layout and drive circuit design for gate integrity.

How does the body diode performance of IRFS9N60A impact its use in synchronous rectification?

The IRFS9N60A body diode exhibits V_SD = 1.5 V at 9.2 A and t_rr = 530–800 ns, making it unsuitable for high-frequency synchronous rectification where low forward voltage and ultrafast recovery are essential. Its body diode is optimized for freewheeling in hard-switched topologies - not for bidirectional conduction - and should be supplemented with external Schottky diodes in true synchronous designs.

Can IRFS9N60A be used in place of IRF840 in existing designs?

No - the IRFS9N60A is not a direct replacement for IRF840. While both are 500–600 V N-channel MOSFETs, the IRF840 has 0.85 Ω R_DS(on), 32 nC Q_g, and TO-220 packaging, whereas IRFS9N60A offers lower R_DS(on) (0.75 Ω), higher Q_g (49 nC), and D2PAK packaging. PCB layout, gate drive strength, and thermal interface must be requalified; the higher gate charge demands stronger drive capability than typical IRF840 circuits provide.

What is the significance of the 5.0 V/ns peak diode recovery dv/dt rating for IRFS9N60A?

The 5.0 V/ns peak diode recovery dv/dt rating indicates the maximum rate of voltage rise the IRFS9N60A can tolerate across its drain-source terminals during body diode commutation without spurious turn-on. This parameter is critical in high-side switching configurations where rapid V_DS transients could couple into the gate via C_rss; exceeding this limit risks unintended conduction and shoot-through. Layout practices minimizing stray inductance are essential to maintain this margin.

IRFS9N60A Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRFS9N60A FAQ

1.How can I place an order for IRFS9N60A through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS9N60A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS9N60A reliable?

The price and inventory of IRFS9N60A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS9N60A is usually 5 days.

3.What payment methods are accepted for IRFS9N60A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS9N60A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS9N60A?

IRFS9N60A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS9N60A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS9N60A?

For technical support, including IRFS9N60A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS9N60A requirements.

6.How does Aetrix verify that IRFS9N60A is sourced from the original manufacturer or authorized distributors?

All IRFS9N60A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS9N60A meets industry standards.

7.What is the process for return or replacement of IRFS9N60A?

All IRFS9N60A units undergo pre-shipment inspection (PSI). If there is an issue with IRFS9N60A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS9N60A part is unused and in its original packaging.

Return procedure for IRFS9N60A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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