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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFS9N60APBF

Name: IRFS9N60APBF
Brand: Vishay Siliconix
SKU: IRFS9N60APBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS9N60APBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS9N60APBF.pdf

Description:: MOSFET N-CH 600V 9.2A D2PAK

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Product details

Overview

IRFS9N60APBF from Vishay Siliconix is a 600 V, 9.2 A N-channel power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.75 Ω at V_GS = 10 V, Q_g = 49 nC, and 290 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS main switch and UPS applications.

For engineers reviewing the IRFS9N60APBF datasheet, IRFS9N60APBF pinout, IRFS9N60APBF application, or IRFS9N60APBF equivalent, key selection criteria include its 600 V V_DS, 0.75 Ω on-resistance, 49 nC gate charge, rugged avalanche capability, and D2PAK thermal performance for industrial power conversion designs.

Technical Context

This MOSFET employs planar high-voltage silicon technology optimized for fast switching and robust unclamped inductive switching (UIS). Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, while low C_iss (1400 pF) and C_oss (180 pF) support high-frequency operation up to several hundred kHz.

The device integrates a body diode with t_rr = 530–800 ns and Q_rr = 3.0–4.4 μC, enabling moderate-speed synchronous rectification or freewheeling in flyback and forward converters. Its R_thJC = 0.75 °C/W enables 170 W continuous dissipation at T_C = 25 °C without forced cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 480 V DC bus operation with 25 % margin for surge and ringing in offline SMPS.
R_DS(on)	0.75 Ω @ V_GS = 10 V - delivers ≤ 63 W conduction loss at 9.2 A, suitable for <100 W primary-side switching.
Q_g	49 nC - requires ~0.5 W average gate drive power at 100 kHz, compatible with standard MOSFET drivers (e.g., IR2110).
E_AS	290 mJ - withstands unclamped inductive energy from 6.8 mH load at 9.2 A without failure, critical for hard-switched topologies.
t_r/t_f	25 ns / 22 ns - enables <500 ns total switching transition, minimizing overlap loss in 200–500 kHz designs.
I_D (T_C = 100 °C)	5.8 A - defines usable current derating in thermally constrained enclosures or natural-convection heatsinks.

Pinout & Package

D2PAK (TO-263) package with exposed drain pad for low thermal resistance (R_thJC = 0.75 °C/W); 3-pin surface-mount outline per JEDEC TO-263AB standard; recommended PCB pad layout includes 10.67 mm × 9.02 mm thermal pad with ≥4 thermal vias.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–10 V logic-level signal; 13 nC Q_gs and 20 nC Q_gd define Miller effect and switching timing.
D (Drain)	High-side power terminal	Connected to HV DC bus (up to 600 V); electrically tied to exposed copper pad for thermal and electrical grounding.
S (Source)	Reference and return path	Common node for gate driver return, current sensing, and body diode cathode; ties to low-side switch source or ground plane.

Key Features

Feature	Design Value
Low Q_g (49 nC)	Reduces gate driver power loss and simplifies drive circuit design for 100–500 kHz switching frequencies.
Enhanced dV/dt ruggedness (5.0 V/ns)	Prevents false turn-on during high dv/dt transients in bridge configurations without snubbers.
Characterized avalanche energy (290 mJ)	Enables reliable operation in unclamped inductive switching events common in flyback and LLC resonant converters.
Body diode t_rr = 530–800 ns	Supports moderate-frequency freewheeling with predictable reverse recovery behavior and low Q_rr-induced losses.
RoHS-compliant Pb-free termination	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), allowing standard reflow without baking.

Applications

Active Clamped Forward Converter	Offline AC-DC Power Supply
Use Scenario: Primary-side main switch in telecom and server PSU designs operating from 85–265 VAC input. IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus, conducting during main PWM on-time and blocking during off-time. Use Value: 600 V rating provides margin against line surges and transformer leakage spikes; 0.75 Ω R_DS(on) limits conduction loss at 9.2 A peak current.	Use Scenario: Main switch in 50–150 W open-frame power supplies for industrial controls and LED drivers. IC Role / Device Role / Timing Role: Fast-turning power switch in discontinuous conduction mode (DCM) flyback topology with 100–200 kHz switching. Use Value: 49 nC Q_g and 25 ns rise time enable efficient high-frequency operation; characterized C_oss allows accurate snubber design.
Uninterruptible Power Supply (UPS)	DC-DC Boost Converter
Use Scenario: Inverter-stage switch in line-interactive UPS systems converting 360–400 V DC bus to 230 VAC output. IC Role / Device Role / Timing Role: Half-bridge high-side switch subjected to repetitive UIS stress during battery backup mode transitions. Use Value: 290 mJ E_AS and 9.2 A I_AR ensure survivability during load dump and short-circuit events without external clamping.	Use Scenario: Boost switch in PFC front-end stage of industrial motor drives and solar inverters. IC Role / Device Role / Timing Role: Medium-power switching transistor handling 400 V output and 5–8 A average input current at 65–100 kHz. Use Value: Low C_iss/C_oss ratio (1400/180 pF) improves light-load efficiency; 150 °C max T_J supports sealed enclosure operation.

Active Clamped Forward Converter

Offline AC-DC Power Supply

Use Scenario: Primary-side main switch in telecom and server PSU designs operating from 85–265 VAC input.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus, conducting during main PWM on-time and blocking during off-time.

Use Value: 600 V rating provides margin against line surges and transformer leakage spikes; 0.75 Ω R_DS(on) limits conduction loss at 9.2 A peak current.

Use Scenario: Main switch in 50–150 W open-frame power supplies for industrial controls and LED drivers.

IC Role / Device Role / Timing Role: Fast-turning power switch in discontinuous conduction mode (DCM) flyback topology with 100–200 kHz switching.

Use Value: 49 nC Q_g and 25 ns rise time enable efficient high-frequency operation; characterized C_oss allows accurate snubber design.

Uninterruptible Power Supply (UPS)

DC-DC Boost Converter

Use Scenario: Inverter-stage switch in line-interactive UPS systems converting 360–400 V DC bus to 230 VAC output.

IC Role / Device Role / Timing Role: Half-bridge high-side switch subjected to repetitive UIS stress during battery backup mode transitions.

Use Value: 290 mJ E_AS and 9.2 A I_AR ensure survivability during load dump and short-circuit events without external clamping.

Use Scenario: Boost switch in PFC front-end stage of industrial motor drives and solar inverters.

IC Role / Device Role / Timing Role: Medium-power switching transistor handling 400 V output and 5–8 A average input current at 65–100 kHz.

Use Value: Low C_iss/C_oss ratio (1400/180 pF) improves light-load efficiency; 150 °C max T_J supports sealed enclosure operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK60ZFP	R_DS(on) = 0.7 Ω (slightly lower), Q_g = 42 nC (lower), but E_AS = 220 mJ (30 % less than IRFS9N60APBF).	Better efficiency at light loads due to lower Q_g, but reduced avalanche margin in hard-switched topologies.	Preferred where gate drive loss dominates and avalanche stress is minimal; not drop-in for high-energy UIS conditions.
FQP9N60C	R_DS(on) = 0.75 Ω (identical), Q_g = 52 nC (slightly higher), R_thJC = 0.85 °C/W (worse thermal performance).	Same conduction loss but higher switching loss and lower power density; body diode t_rr = 1000 ns (slower).	Acceptable for cost-sensitive, lower-frequency (<100 kHz) designs where thermal headroom exists.

Compared with STP9NK60ZFP and FQP9N60C, the IRFS9N60APBF offers superior avalanche ruggedness and thermal performance in D2PAK, making it optimal for high-reliability 200–500 kHz offline SMPS where UIS stress and power density are critical.

Availability

IRFS9N60APBF is available at Aetrix Electronics and suitable for switch mode power supply (SMPS), uninterruptible power supply (UPS), and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRFS9N60APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFS9N60APBF belongs to Vishay's high-voltage TrenchFET®-derived power MOSFET family, engineered for ruggedness and efficiency in offline AC-DC conversion, UPS, and industrial motor control applications.

FAQ

What is the maximum junction temperature rating for IRFS9N60APBF?

The IRFS9N60APBF has a maximum operating junction temperature of +150 °C, as specified in its absolute maximum ratings. This allows reliable operation in enclosed industrial environments when mounted on a heatsink with R_thJC = 0.75 °C/W and proper PCB copper area. Derating begins above T_C = 25 °C at 1.3 W/°C, and the device must remain within this limit to avoid thermal runaway or parametric shift.

Does IRFS9N60APBF support logic-level gate drive?

No, IRFS9N60APBF is not a logic-level MOSFET. Its gate threshold voltage range is 2.0–4.0 V, but full enhancement requires V_GS = 10 V to achieve R_DS(on) = 0.75 Ω. Driving it with only 5 V results in significantly higher on-resistance (>2 Ω) and excessive conduction loss. It must be paired with a dedicated gate driver capable of sourcing/sinking ≥1 A peak current to manage its 49 nC Q_g.

What is the body diode reverse recovery charge (Q_rr) of IRFS9N60APBF?

The IRFS9N60APBF body diode has a reverse recovery charge Q_rr of 3.0–4.4 μC, measured at T_J = 25 °C, I_F = 9.2 A, and dI/dt = 100 A/μs. This value directly impacts switching loss in freewheeling paths and must be accounted for in snubber design and EMI filtering. The relatively low Q_rr supports clean turn-off in flyback and forward converters.

Can IRFS9N60APBF replace IRF840 in existing designs?

IRFS9N60APBF is not a direct replacement for IRF840. While both are 500–600 V N-channel MOSFETs, IRF840 has R_DS(on) = 0.85 Ω and Q_g = 38 nC, whereas IRFS9N60APBF offers lower R_DS(on) (0.75 Ω) but higher Q_g (49 nC). Layout changes may be needed due to D2PAK vs. TO-220 footprint, and gate drive strength must increase to handle the extra 11 nC. Thermal design must also be revalidated.

Is IRFS9N60APBF RoHS-compliant and halogen-free?

Yes, IRFS9N60APBF is RoHS-compliant and halogen-free, as confirmed by Vishay's material declaration (document #99912). It uses lead (Pb)-free terminations and complies with EU RoHS Directive 2011/65/EU and JEDEC JS-709. The "PbF" suffix explicitly denotes Pb-free packaging, and the device meets MSL1 per IPC-J-STD-020 for standard reflow assembly without preconditioning.

IRFS9N60APBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRFS9N60APBF FAQ

1.How can I place an order for IRFS9N60APBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS9N60APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS9N60APBF reliable?

The price and inventory of IRFS9N60APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS9N60APBF is usually 5 days.

3.What payment methods are accepted for IRFS9N60APBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS9N60APBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS9N60APBF?

IRFS9N60APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS9N60APBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS9N60APBF?

For technical support, including IRFS9N60APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS9N60APBF requirements.

6.How does Aetrix verify that IRFS9N60APBF is sourced from the original manufacturer or authorized distributors?

All IRFS9N60APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS9N60APBF meets industry standards.

7.What is the process for return or replacement of IRFS9N60APBF?

All IRFS9N60APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS9N60APBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS9N60APBF part is unused and in its original packaging.

Return procedure for IRFS9N60APBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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