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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFS9N60ATRL

Name: IRFS9N60ATRL
Brand: Vishay Siliconix
SKU: IRFS9N60ATRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS9N60ATRL

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS9N60ATRL.pdf

Description:: MOSFET N-CH 600V 9.2A D2PAK

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Product details

Overview

IRFS9N60ATRL from Vishay Siliconix is a 600 V, 9.2 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.75 Ω R_DS(on) at V_GS = 10 V, 49 nC total gate charge, and 290 mJ single-pulse avalanche energy-designed for high-voltage switching in offline SMPS main switch and active-clamped forward topologies.

For engineers reviewing the IRFS9N60ATRL datasheet, IRFS9N60ATRL pinout, IRFS9N60ATRL application, or IRFS9N60ATRL equivalent, key selection criteria include its 600 V blocking capability, rugged avalanche performance, low Q_g/Q_gd ratio for fast hard-switching, and thermal resistance of 0.75 °C/W junction-to-case-critical for high-efficiency, high-reliability power conversion designs.

Technical Context

This device employs planar vertical DMOS technology with fully characterized avalanche voltage and current ratings, enabling robust unclamped inductive switching. Its gate threshold voltage (2.0–4.0 V) and low gate input resistance (0.5–3.2 Ω) support direct drive from standard PWM controllers without gate drivers in moderate-speed applications.

The MOSFET integrates an intrinsic body diode with 530–800 ns reverse recovery time and 3.0–4.4 μC Q_rr, optimized for snubberless operation in flyback and forward converters. Its C_{oss eff.} of 96 pF (0–480 V) and dV/dt immunity up to 5.0 V/ns ensure stable operation under high dv/dt stress in high-frequency SMPS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus designs with 50 % safety margin for surge and ringing
R_DS(on) @ V_GS = 10 V	0.75 Ω - enables ≤ 63 W conduction loss at 9.2 A continuous drain current
Q_g max	49 nC - determines gate drive power and switching speed; compatible with UC384x-class controllers
E_AS	290 mJ - allows reliable unclamped inductive switching without external snubbers
R_thJC	0.75 °C/W - enables 170 W power dissipation with ≤ 127.5 °C junction rise above 25 °C case
I_D @ T_C = 100 °C	5.8 A - defines usable current derating in thermally constrained heatsink environments
Body diode V_SD	1.5 V @ 9.2 A - impacts conduction loss during synchronous rectification or freewheeling phases

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level signal to modulate channel conductivity; requires < 49 nC charge for full turn-on
D (Drain)	High-side power output	Connected to 600 V DC bus; electrically and thermally tied to exposed metal tab for low-inductance, high-current routing
S (Source)	Power return reference	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery charge

Key Features

Feature	Design Value
Low Q_g / Q_gd ratio (49 nC / 20 nC)	Enables clean, low-overshoot switching with minimal Miller-induced shoot-through risk in half-bridge configurations
Fully characterized C_{oss eff.} (96 pF)	Allows accurate calculation of turn-off losses and resonant timing in ZVS/ZCS topologies
170 W P_D @ T_C = 25 °C	Supports high-power density designs with minimal heatsink volume when mounted on ≥ 10 cm² 2-oz copper
5.0 V/ns peak diode dV/dt rating	Prevents false turn-on during high-speed commutation in bridge-leg layouts with shared source nodes
RoHS-compliant, halogen-free construction	Meets IPC-J-STD-609A Class 1 material declarations for industrial and telecom end-equipment compliance

Applications

Server PSU Main Switch	Industrial UPS Inverter Stage
Use Scenario: Primary-side switching in 1–3 kW telecom/server PSUs using active-clamped forward topology with 380–400 V DC input. IC Role / Device Role / Timing Role: High-voltage main switch handling 9.2 A peak current at 100–200 kHz; operates in hard-switched mode with controlled dv/dt. Use Value: 290 mJ E_AS eliminates need for clamping circuits; 0.75 Ω R_DS(on) maintains >94 % efficiency at full load.	Use Scenario: DC–AC inverter leg in 5–10 kVA online UPS systems requiring bidirectional current handling and high reliability. IC Role / Device Role / Timing Role: N-channel switch in H-bridge output stage; body diode conducts freewheeling current during dead-time intervals. Use Value: 530–800 ns trr and 3.0–4.4 μC Q_rr minimize switching loss and EMI during zero-crossing transitions.
EV Charger Auxiliary Supply	Medical Imaging Power Module
Use Scenario: Off-line auxiliary SMPS supplying control logic and gate drivers in 11–22 kW EV charging stations. IC Role / Device Role / Timing Role: 600 V primary switch in flyback converter operating at 65 kHz with wide input range (85–265 VAC). Use Value: 600 V V_DS withstands 265 VAC line surges + 100 % margin; 25 μA I_DSS ensures low standby leakage.	Use Scenario: High-isolation, low-noise power supply for X-ray detector bias rails and FPGA sequencing in portable imaging systems. IC Role / Device Role / Timing Role: Isolated DC–DC primary switch in reinforced-insulation flyback design meeting IEC 60601-1 creepage requirements. Use Value: Low 100 nA IGSS and 2.0–4.0 V V_GS(th) enable precise gate control and reduced EMI coupling into sensitive analog front-ends.

Server PSU Main Switch

Industrial UPS Inverter Stage

Use Scenario: Primary-side switching in 1–3 kW telecom/server PSUs using active-clamped forward topology with 380–400 V DC input.

IC Role / Device Role / Timing Role: High-voltage main switch handling 9.2 A peak current at 100–200 kHz; operates in hard-switched mode with controlled dv/dt.

Use Value: 290 mJ E_AS eliminates need for clamping circuits; 0.75 Ω R_DS(on) maintains >94 % efficiency at full load.

Use Scenario: DC–AC inverter leg in 5–10 kVA online UPS systems requiring bidirectional current handling and high reliability.

IC Role / Device Role / Timing Role: N-channel switch in H-bridge output stage; body diode conducts freewheeling current during dead-time intervals.

Use Value: 530–800 ns trr and 3.0–4.4 μC Q_rr minimize switching loss and EMI during zero-crossing transitions.

EV Charger Auxiliary Supply

Medical Imaging Power Module

Use Scenario: Off-line auxiliary SMPS supplying control logic and gate drivers in 11–22 kW EV charging stations.

IC Role / Device Role / Timing Role: 600 V primary switch in flyback converter operating at 65 kHz with wide input range (85–265 VAC).

Use Value: 600 V V_DS withstands 265 VAC line surges + 100 % margin; 25 μA I_DSS ensures low standby leakage.

Use Scenario: High-isolation, low-noise power supply for X-ray detector bias rails and FPGA sequencing in portable imaging systems.

IC Role / Device Role / Timing Role: Isolated DC–DC primary switch in reinforced-insulation flyback design meeting IEC 60601-1 creepage requirements.

Use Value: Low 100 nA IGSS and 2.0–4.0 V V_GS(th) enable precise gate control and reduced EMI coupling into sensitive analog front-ends.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK60ZFP	600 V, 8.5 A, R_DS(on) = 0.75 Ω, Q_g = 42 nC, TO-220FP package	Lower thermal mass and higher R_thJA; unsuitable for >100 W continuous conduction without forced air	Preferred for cost-sensitive, lower-power (<150 W), through-hole assembled supplies
IXFH9N60X3	600 V, 9.4 A, R_DS(on) = 0.65 Ω, Q_g = 34 nC, TO-247 package	Lower R_DS(on) and gate charge, but larger footprint and higher price; no RoHS/halogen-free option in base variant	Selected when <0.65 Ω conduction loss and <34 nC drive requirement outweigh D2PAK layout advantages

Compared with STP9NK60ZFP and IXFH9N60X3, the IRFS9N60ATRL offers optimal balance of surface-mount integration, 0.75 Ω conduction loss, 290 mJ avalanche ruggedness, and halogen-free compliance-making it preferred for high-density, high-reliability, and regulated industrial power modules where D2PAK thermal and assembly benefits are decisive.

Availability

IRFS9N60ATRL is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed power switching applications requiring stable component supply, long-term lifecycle assurance, and traceable RoHS-compliant sourcing.

Supply support for IRFS9N60ATRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The IRFS9N60ATRL belongs to Vishay's high-voltage power MOSFET product line engineered for demanding offline AC–DC and DC–DC conversion in industrial, telecom, and medical power systems where avalanche capability and thermal stability are critical.

FAQ

What is the maximum continuous drain current for IRFS9N60ATRL at 100 °C case temperature?

The IRFS9N60ATRL supports 5.8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures junction temperature remains ≤150 °C under steady-state conduction. Designers must verify PCB copper area and airflow to sustain this current in actual layouts.

Does IRFS9N60ATRL have avalanche capability, and how is it rated?

Yes, the IRFS9N60ATRL is fully characterized for avalanche operation: it delivers 290 mJ single-pulse avalanche energy (E_AS) and supports 9.2 A repetitive avalanche current (I_AR) with 17 mJ per pulse (E_AR). These values are measured under standardized conditions (L = 6.8 mH, R_g = 25 Ω, starting T_J = 25 °C) and enable robust unclamped inductive switching without external protection.

What is the gate threshold voltage range for IRFS9N60ATRL, and why does it matter?

The IRFS9N60ATRL has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental conduction from noise or leakage. Tight V_GS(th) distribution also improves current sharing in paralleled configurations and simplifies gate drive design for fixed-voltage controllers.

How does the body diode performance of IRFS9N60ATRL impact its use in flyback converters?

In flyback converters, the IRFS9N60ATRL's body diode conducts during the transformer reset phase. Its 530–800 ns reverse recovery time (t_rr) and 3.0–4.4 μC reverse recovery charge (Q_rr) directly affect switching loss and EMI. Lower Q_rr reduces turn-on loss in synchronous rectification and minimizes voltage spikes across the MOSFET during diode commutation-critical for maintaining efficiency and reliability.

Is IRFS9N60ATRL RoHS-compliant and halogen-free?

Yes, the IRFS9N60ATRL is both RoHS-compliant and halogen-free, as confirmed by Vishay's material declaration (document #99912) and ordering code suffix "-GE3" in equivalent SiHFS9N60ATRL-GE3. The "PbF" in IRFS9N60ATRLPbF denotes lead-free termination, and all packaging meets JEDEC J-STD-609A Class 1 requirements for bromine/chlorine content.

IRFS9N60ATRL Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRFS9N60ATRL FAQ

1.How can I place an order for IRFS9N60ATRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS9N60ATRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS9N60ATRL reliable?

The price and inventory of IRFS9N60ATRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS9N60ATRL is usually 5 days.

3.What payment methods are accepted for IRFS9N60ATRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS9N60ATRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS9N60ATRL?

IRFS9N60ATRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS9N60ATRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS9N60ATRL?

For technical support, including IRFS9N60ATRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS9N60ATRL requirements.

6.How does Aetrix verify that IRFS9N60ATRL is sourced from the original manufacturer or authorized distributors?

All IRFS9N60ATRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS9N60ATRL meets industry standards.

7.What is the process for return or replacement of IRFS9N60ATRL?

All IRFS9N60ATRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFS9N60ATRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS9N60ATRL part is unused and in its original packaging.

Return procedure for IRFS9N60ATRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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