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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFS9N60ATRLPBF

Name: IRFS9N60ATRLPBF
Brand: Vishay Siliconix
SKU: IRFS9N60ATRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS9N60ATRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS9N60ATRLPBF.pdf

Description:: MOSFET N-CH 600V 9.2A D2PAK

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Product details

Overview

IRFS9N60ATRLPBF from Vishay Siliconix is a 600 V, 9.2 A N-channel power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.75 Ω at V_GS = 10 V, Q_g = 49 nC, and 290 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS main switch and active-clamped forward topologies.

For engineers reviewing the IRFS9N60ATRLPBF datasheet, IRFS9N60ATRLPBF pinout, IRFS9N60ATRLPBF application, or IRFS9N60ATRLPBF equivalent, key selection criteria include its 600 V blocking capability, low gate charge for simplified drive, robust avalanche ruggedness, and thermal performance with R_thJC = 0.75 °C/W in D2PAK packaging.

Technical Context

This device uses planar VDMOS technology optimized for high-voltage hard-switching applications. Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, while the low C_iss (1400 pF) and C_oss eff. (96 pF) support fast switching with controlled EMI generation.

The integrated body diode exhibits t_rr = 530–800 ns and Q_rr = 3.0–4.4 μC at 25 °C, enabling use in synchronous rectification and freewheeling roles where reverse recovery behavior directly impacts efficiency and snubber design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports full-wave rectified 400 V AC input without derating in offline SMPS designs
R_DS(on) max	0.75 Ω @ V_GS = 10 V - limits conduction loss to ≤ 63 W at 9.2 A continuous drain current
Q_g max	49 nC - enables gate drive with ≤ 1 W average power using 10 V supply and 100 kHz switching
E_AS	290 mJ - withstands unclamped inductive switching events up to 9.2 A without failure
R_thJC	0.75 °C/W - allows 170 W power dissipation with ≤ 127.5 °C junction rise above 25 °C case temperature
t_r/t_f	25 ns / 22 ns @ V_DD = 300 V - supports <100 ns total switching transitions for <500 kHz operation

Pinout & Package

D2PAK (TO-263) package with exposed drain pad on bottom side for thermal conduction; 3-pin surface-mount configuration with G–D–S terminal layout matching JEDEC TO-263AB outline.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 13 nC Q_gs defines Miller plateau timing and driver sizing
D (Drain)	High-side power output	Connected to PCB thermal pad; carries full load current and absorbs avalanche energy during switching transients
S (Source)	Power return reference	Common node for gate drive return and current sensing; ties to source of upstream driver in half-bridge configurations

Key Features

Feature	Design Value
Low Q_g (49 nC)	Reduces gate driver power loss and simplifies selection of low-cost SOT-23 MOSFET drivers
Enhanced dV/dt ruggedness	Withstands ≥5.0 V/ns transient voltage slew rates without spurious turn-on in noisy high-side switching
Characterized C_oss eff. (96 pF)	Enables accurate soft-switching timing prediction in resonant LLC and ZVS topologies
150 °C max T_J	Supports operation in sealed industrial enclosures with ambient up to 85 °C and 40 °C/W board-level R_thJA

Applications

Offline SMPS Main Switch	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switching in 300–500 W flyback or forward converters operating from 85–265 V AC mains. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding; operates at 65–130 kHz with hard-switched PWM. Use Value: 600 V rating accommodates 480 V DC bus peaks; 0.75 Ω R_DS(on) keeps conduction loss under 63 W at full load.	Use Scenario: Inverter stage delivering clean 230 V AC output during grid outage, with bidirectional battery interface. IC Role / Device Role / Timing Role: Low-loss switching element in half-bridge inverter leg; handles 5–10 kHz PWM with dead-time control. Use Value: 290 mJ E_AS protects against inductive kickback during battery disconnection events.
Active-Clamped Forward Converter	High-Speed Industrial Motor Drive
Use Scenario: Main switch in telecom rectifier modules requiring zero-voltage switching and reduced EMI. IC Role / Device Role / Timing Role: Clamped-mode power switch synchronized with auxiliary clamp FET; operates at 200–500 kHz. Use Value: Low C_oss eff. (96 pF) minimizes clamp capacitor stress and improves ZVS transition margin.	Use Scenario: Phase-leg switching in 1–3 kW servo drives powering brushless DC motors. IC Role / Device Role / Timing Role: High-reliability power switch in IGBT replacement topology; handles repetitive 10–20 kHz PWM with regenerative braking. Use Value: Body diode t_rr ≤ 800 ns prevents cross-conduction losses during commutation; 150 °C T_J rating supports compact heatsink design.

Offline SMPS Main Switch

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switching in 300–500 W flyback or forward converters operating from 85–265 V AC mains.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding; operates at 65–130 kHz with hard-switched PWM.

Use Value: 600 V rating accommodates 480 V DC bus peaks; 0.75 Ω R_DS(on) keeps conduction loss under 63 W at full load.

Use Scenario: Inverter stage delivering clean 230 V AC output during grid outage, with bidirectional battery interface.

IC Role / Device Role / Timing Role: Low-loss switching element in half-bridge inverter leg; handles 5–10 kHz PWM with dead-time control.

Use Value: 290 mJ E_AS protects against inductive kickback during battery disconnection events.

Active-Clamped Forward Converter

High-Speed Industrial Motor Drive

Use Scenario: Main switch in telecom rectifier modules requiring zero-voltage switching and reduced EMI.

IC Role / Device Role / Timing Role: Clamped-mode power switch synchronized with auxiliary clamp FET; operates at 200–500 kHz.

Use Value: Low C_oss eff. (96 pF) minimizes clamp capacitor stress and improves ZVS transition margin.

Use Scenario: Phase-leg switching in 1–3 kW servo drives powering brushless DC motors.

IC Role / Device Role / Timing Role: High-reliability power switch in IGBT replacement topology; handles repetitive 10–20 kHz PWM with regenerative braking.

Use Value: Body diode t_rr ≤ 800 ns prevents cross-conduction losses during commutation; 150 °C T_J rating supports compact heatsink design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK60ZFP	600 V, 8.5 A, R_DS(on) = 0.75 Ω, Q_g = 42 nC, TO-220FP package	Lower thermal resistance to ambient but no exposed drain pad; requires through-hole mounting	Preferred when board space permits through-hole assembly and lower gate drive power is critical
IXFH9N60X3	600 V, 9.3 A, R_DS(on) = 0.72 Ω, Q_g = 38 nC, TO-247 package	Higher peak current rating and lower Q_g, but larger footprint and higher cost	Selected for higher reliability margin in 24/7 industrial UPS systems with forced-air cooling

Compared with STP9NK60ZFP and IXFH9N60X3, IRFS9N60ATRLPBF offers optimal surface-mount integration in D2PAK with balanced R_DS(on)/Q_g trade-off, making it ideal for space-constrained offline SMPS where thermal pad attachment is feasible.

Availability

IRFS9N60ATRLPBF is available at Aetrix Electronics and suitable for offline SMPS main switch, uninterruptible power supply (UPS), and active-clamped forward converter applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFS9N60ATRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFS9N60ATRLPBF belongs to Vishay's high-voltage N-channel power MOSFET product line, engineered for robustness in hard-switched offline power conversion with emphasis on avalanche energy handling and gate drive simplicity.

FAQ

What is the maximum continuous drain current rating for IRFS9N60ATRLPBF at 100 °C case temperature?

The IRFS9N60ATRLPBF has a continuous drain current rating of 5.8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-power operation and must be verified against actual board-level thermal resistance in the target layout.

Does IRFS9N60ATRLPBF support logic-level gate drive?

No, IRFS9N60ATRLPBF is not a logic-level MOSFET. Its gate threshold voltage range is 2.0–4.0 V, but full enhancement requires V_GS = 10 V to achieve R_DS(on) = 0.75 Ω. Driving it with 5 V may result in excessive conduction loss due to incomplete turn-on; a 10 V gate driver is required for specified performance.

What is the avalanche energy rating of IRFS9N60ATRLPBF and how is it tested?

The IRFS9N60ATRLPBF is rated for 290 mJ single-pulse avalanche energy (E_AS) under test conditions of L = 6.8 mH, R_g = 25 Ω, and I_AS = 9.2 A. This value is measured per JEDEC standard JESD24-1 and confirms ruggedness against inductive switching transients in offline SMPS and motor drive circuits.

How does the body diode performance of IRFS9N60ATRLPBF compare to standard FRDs?

The IRFS9N60ATRLPBF body diode has t_rr = 530–800 ns and Q_rr = 3.0–4.4 μC at 25 °C, which is slower and higher-charge than dedicated fast recovery diodes. It is suitable for freewheeling in non-synchronous topologies but not recommended for high-frequency synchronous rectification without external diode clamping.

Is IRFS9N60ATRLPBF RoHS-compliant and halogen-free?

Yes, IRFS9N60ATRLPBF is both RoHS-compliant and halogen-free, as confirmed by Vishay's material declaration referenced in document 99912. The "TRLPBF" suffix denotes lead (Pb)-free and halogen-free construction per JEDEC standards, with termination finish meeting IPC/JEDEC J-STD-609A Class 1 requirements.

IRFS9N60ATRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRFS9N60ATRLPBF FAQ

1.How can I place an order for IRFS9N60ATRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS9N60ATRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS9N60ATRLPBF reliable?

The price and inventory of IRFS9N60ATRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS9N60ATRLPBF is usually 5 days.

3.What payment methods are accepted for IRFS9N60ATRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS9N60ATRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS9N60ATRLPBF?

IRFS9N60ATRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS9N60ATRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS9N60ATRLPBF?

For technical support, including IRFS9N60ATRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS9N60ATRLPBF requirements.

6.How does Aetrix verify that IRFS9N60ATRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFS9N60ATRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS9N60ATRLPBF meets industry standards.

7.What is the process for return or replacement of IRFS9N60ATRLPBF?

All IRFS9N60ATRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS9N60ATRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS9N60ATRLPBF part is unused and in its original packaging.

Return procedure for IRFS9N60ATRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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