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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFS9N60ATRRPBF

Name: IRFS9N60ATRRPBF
Brand: Vishay Siliconix
SKU: IRFS9N60ATRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS9N60ATRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS9N60ATRRPBF.pdf

Description:: MOSFET N-CH 600V 9.2A D2PAK

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Product details

Overview

IRFS9N60ATRRPBF from Vishay Siliconix is a 600 V, 9.2 A N-channel power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.75 Ω at V_GS = 10 V, Q_g = 49 nC, and 290 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS main switch and active-clamped forward topologies.

For engineers reviewing the IRFS9N60ATRRPBF datasheet, IRFS9N60ATRRPBF pinout, IRFS9N60ATRRPBF application, or IRFS9N60ATRRPBF equivalent, key selection criteria include its 600 V blocking capability, 0.75 Ω on-resistance at 10 V gate drive, 49 nC total gate charge, body diode recovery time of 530–800 ns, and D2PAK thermal performance with R_thJC = 0.75 °C/W.

Technical Context

This device uses planar vertical DMOS technology optimized for rugged high-voltage operation, with fully characterized avalanche voltage/current and dynamic dV/dt immunity up to 5.0 V/ns. Its gate threshold voltage (2.0–4.0 V) and low gate leakage (±100 nA) support stable TTL/CMOS-level drive without external level shifting.

The integrated body diode exhibits V_SD = 1.5 V at 9.2 A and Q_rr = 3.0–4.4 μC, enabling reliable unclamped inductive switching in hard-switched converters. Capacitance parameters - C_iss = 1400 pF, C_oss = 180 pF, C_rss = 7.1 pF - are specified at V_DS = 25 V and f = 1 MHz per JEDEC test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 480 V DC bus designs with 25 % safety margin for surge and ringing
R_DS(on)	0.75 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 5.5 A continuous drain current
Q_g	49 nC - determines gate driver power requirement and switching speed in 300–400 V hard-switching applications
E_AS	290 mJ - allows safe operation under unclamped inductive load faults without device failure
t_r/t_f	25 ns / 22 ns - supports >200 kHz switching in resonant and quasi-resonant SMPS topologies
R_thJC	0.75 °C/W - enables 170 W power dissipation with ≤127.5 °C junction rise above 25 °C case temperature
I_D (T_C = 100 °C)	5.8 A - defines maximum continuous current in thermally constrained PCB layouts

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); standard JEDEC outline compliant; recommended minimum pad layout: 10.67 mm × 9.02 mm thermal pad with 3.68 mm source/sink traces.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≤±30 V bias; 13 nC Q_gs and 20 nC Q_gd define Miller and turn-on timing
D	Drain	High-side switching node; electrically connected to exposed thermal pad; handles 600 V transient and 37 A pulsed current
S	Source	Power ground reference; carries full load current and body diode reverse recovery charge (Q_rr = 3.0–4.4 μC)

Key Features

Feature	Design Value
Low Q_g	49 nC total gate charge reduces driver IC stress and improves efficiency in high-frequency SMPS
Avalanche ruggedness	290 mJ single-pulse E_AS and 17 mJ repetitive EAR ensure reliability during overvoltage transients
Dynamic dV/dt immunity	5.0 V/ns rated peak diode recovery dV/dt prevents false turn-on in high dv/dt environments
Body diode characterization	trr = 530–800 ns and Q_rr = 3.0–4.4 μC enable predictable snubber design in flyback and LLC converters
Thermal resistance	R_thJC = 0.75 °C/W allows direct heatsinking via PCB copper or external heatsink attachment to drain pad

Applications

Active-Clamped Forward Converter	Offline AC-DC Power Supply
Use Scenario: Primary-side main switch in telecom and server PSUs operating at 100–300 kHz with 380–400 V DC bus. IC Role / Device Role / Timing Role: High-voltage synchronous rectifier control switch handling 600 V blocking and 9.2 A peak current. Use Value: 0.75 Ω R_DS(on) minimizes conduction loss at partial load; 290 mJ E_AS withstands clamp circuit overshoot during reset.	Use Scenario: Main switch in universal-input (85–265 VAC) 200–500 W industrial power supplies. IC Role / Device Role / Timing Role: Primary-side power switch in discontinuous conduction mode (DCM) flyback or critical conduction mode (CrCM) PFC stage. Use Value: 49 nC Q_g enables efficient gate driving with low-cost 1-A drivers; 5.0 V/ns dV/dt rating suppresses spurious turn-on from transformer leakage spikes.
Uninterruptible Power Supply (UPS)	High-Speed Motor Drive Inverter
Use Scenario: DC-link switching in online double-conversion UPS systems with battery backup and 400 V DC bus. IC Role / Device Role / Timing Role: Bidirectional energy transfer switch in H-bridge output stage during battery charging and inverting modes. Use Value: Fully characterized C_iss/C_oss/C_rss values allow precise dead-time optimization to minimize shoot-through risk.	Use Scenario: Half-bridge leg in 3-phase BLDC motor drives for HVAC and industrial automation requiring fast commutation. IC Role / Device Role / Timing Role: High-side switching element in 600 V-rated inverter leg, operating with 25 ns rise/fall times. Use Value: 22 ns fall time and 25 ns rise time support >150 kHz PWM frequency while maintaining <1 % switching loss overhead.

Active-Clamped Forward Converter

Offline AC-DC Power Supply

Use Scenario: Primary-side main switch in telecom and server PSUs operating at 100–300 kHz with 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage synchronous rectifier control switch handling 600 V blocking and 9.2 A peak current.

Use Value: 0.75 Ω R_DS(on) minimizes conduction loss at partial load; 290 mJ E_AS withstands clamp circuit overshoot during reset.

Use Scenario: Main switch in universal-input (85–265 VAC) 200–500 W industrial power supplies.

IC Role / Device Role / Timing Role: Primary-side power switch in discontinuous conduction mode (DCM) flyback or critical conduction mode (CrCM) PFC stage.

Use Value: 49 nC Q_g enables efficient gate driving with low-cost 1-A drivers; 5.0 V/ns dV/dt rating suppresses spurious turn-on from transformer leakage spikes.

Uninterruptible Power Supply (UPS)

High-Speed Motor Drive Inverter

Use Scenario: DC-link switching in online double-conversion UPS systems with battery backup and 400 V DC bus.

IC Role / Device Role / Timing Role: Bidirectional energy transfer switch in H-bridge output stage during battery charging and inverting modes.

Use Value: Fully characterized C_iss/C_oss/C_rss values allow precise dead-time optimization to minimize shoot-through risk.

Use Scenario: Half-bridge leg in 3-phase BLDC motor drives for HVAC and industrial automation requiring fast commutation.

IC Role / Device Role / Timing Role: High-side switching element in 600 V-rated inverter leg, operating with 25 ns rise/fall times.

Use Value: 22 ns fall time and 25 ns rise time support >150 kHz PWM frequency while maintaining <1 % switching loss overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK60ZFP	Zener-protected superjunction MOSFET; R_DS(on) = 0.7 Ω, Q_g = 42 nC, same 600 V rating but TO-220FP package	Lacks D2PAK thermal performance (R_thJC = 1.25 °C/W vs. 0.75 °C/W); lower E_AS (190 mJ)	Prefer when through-hole mounting and lower gate charge are prioritized over thermal density
IXFH9N60X3	Ultra-junction X3 technology; R_DS(on) = 0.65 Ω, Q_g = 38 nC, D2PAK-3L package, 150 °C T_J rating	Higher dV/dt immunity (7.5 V/ns), faster trr (380 ns), but no documented E_AS rating	Prefer when fastest switching and lowest conduction loss are required, and avalanche robustness is secondary

Compared with STP9NK60ZFP and IXFH9N60X3, IRFS9N60ATRRPBF delivers superior thermal performance in surface-mount form factor and verified 290 mJ avalanche energy - making it optimal for space-constrained, high-reliability offline SMPS where fault tolerance and board-level thermal management are critical.

Availability

IRFS9N60ATRRPBF is available at Aetrix Electronics and suitable for switch mode power supply (SMPS), uninterruptible power supply (UPS), and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRFS9N60ATRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power management solutions for industrial, computing, and automotive markets.

The IRFS9N60ATRRPBF belongs to Vishay's high-voltage power MOSFET product line, engineered for rugged offline power conversion with emphasis on avalanche survivability, dynamic stability, and thermal efficiency in compact surface-mount packages.

FAQ

What is the maximum continuous drain current for IRFS9N60ATRRPBF at 100 °C case temperature?

The maximum continuous drain current for IRFS9N60ATRRPBF is 5.8 A when the case temperature is maintained at 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, and must be validated against actual PCB layout and heatsinking in the target IRFS9N60ATRRPBF application.

Does IRFS9N60ATRRPBF have a built-in gate protection diode?

No, IRFS9N60ATRRPBF does not integrate a gate protection Zener diode. Its gate-source voltage rating is ±30 V, and gate leakage is specified at ±100 nA at ±30 V. External gate protection - such as a 15 V Zener clamp between gate and source - is recommended in noisy or high-dV/dt environments to prevent gate oxide damage. This design choice preserves low Q_g and ensures compatibility with standard MOSFET drivers used with IRFS9N60ATRRPBF.

What is the typical body diode reverse recovery time (trr) for IRFS9N60ATRRPBF?

The typical body diode reverse recovery time (t_rr) for IRFS9N60ATRRPBF is 530 ns, with a maximum of 800 ns, measured at T_J = 25 °C, I_F = 9.2 A, and dI/dt = 100 A/μs. This parameter directly impacts switching losses and EMI in hard-switched topologies like flyback and forward converters using IRFS9N60ATRRPBF as the primary switch.

Is IRFS9N60ATRRPBF RoHS-compliant and halogen-free?

Yes, IRFS9N60ATRRPBF is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU requirements. The "TRRPBF" suffix denotes tape-and-reel packaging with Pb-free terminations and halogen-free molding compound, as confirmed in the Vishay ordering information table for SiHFS9N60A-GE3 family variants including IRFS9N60ATRRPBF.

How does the effective output capacitance (Coss eff.) of IRFS9N60ATRRPBF affect zero-voltage switching (ZVS) design?

The effective output capacitance (C_{oss eff.}) of IRFS9N60ATRRPBF is 96 pF, defined across V_DS = 0 V to 480 V. This value determines the energy required to discharge the drain capacitance before turn-on in ZVS circuits - e.g., in LLC resonant converters - and directly influences minimum achievable switching frequency and resonant tank sizing. Designers must use this C_{oss eff.} value, not the small-signal C_oss, when calculating ZVS conditions for IRFS9N60ATRRPBF.

IRFS9N60ATRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRFS9N60ATRRPBF FAQ

1.How can I place an order for IRFS9N60ATRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS9N60ATRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS9N60ATRRPBF reliable?

The price and inventory of IRFS9N60ATRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS9N60ATRRPBF is usually 5 days.

3.What payment methods are accepted for IRFS9N60ATRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS9N60ATRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS9N60ATRRPBF?

IRFS9N60ATRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS9N60ATRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS9N60ATRRPBF?

For technical support, including IRFS9N60ATRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS9N60ATRRPBF requirements.

6.How does Aetrix verify that IRFS9N60ATRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFS9N60ATRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS9N60ATRRPBF meets industry standards.

7.What is the process for return or replacement of IRFS9N60ATRRPBF?

All IRFS9N60ATRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS9N60ATRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS9N60ATRRPBF part is unused and in its original packaging.

Return procedure for IRFS9N60ATRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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