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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFSL31N20DTRL

Name: IRFSL31N20DTRL
Brand: Vishay Siliconix
SKU: IRFSL31N20DTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL31N20DTRL

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL31N20DTRL.pdf

Description:: MOSFET N-CH 200V 31A I2PAK

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Product details

Overview

IRFSL31N20DTRL from Infineon Technologies (formerly International Rectifier) is a 200 V, 31 A N-channel D2Pak-3L power MOSFET optimized for high-frequency DC–DC converters and telecom 48 V input forward topologies. It features 0.082 Ω R_DS(on) at V_GS = 10 V, 70 nC typical total gate charge, and 170 pF effective output capacitance (C_oss-eff) to minimize switching losses in hard-switched SMPS stages.

For engineers reviewing the IRFSL31N20DTRL datasheet, IRFSL31N20DTRL pinout, IRFSL31N20DTRL application, or IRFSL31N20DTRL equivalent, key selection criteria include its 200 V V_DS rating, 124 A pulsed drain current capability, avalanche-rated construction (420 mJ single-pulse E_AS), and D2Pak surface-mount package with low 0.75 °C/W junction-to-case thermal resistance.

Technical Context

This device employs HEXFET® silicon technology with fully characterized dynamic parameters including C_iss = 2370 pF, C_oss = 390 pF (at V_DS = 25 V), and C_rss = 78 pF - enabling accurate loss modeling in resonant and phase-shifted full-bridge designs. Its gate threshold voltage (V_GS(th)) ranges from 3.0 V to 5.5 V, ensuring robust turn-on margin with standard 10 V gate drivers.

The integrated body diode delivers 1.3 V forward voltage at 18 A and 25 °C, with 200–300 ns reverse recovery time and 1.7–2.6 µC Q_rr, supporting synchronous rectification and freewheeling in continuous conduction mode (CCM) operation. Thermal design is supported by validated transient impedance curves and linear derating of 1.3 W/°C above 25 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Withstands 48 V telecom bus transients up to 160 V DC plus safety margin in forward converter primary switches.
R_DS(on) max	0.082 Ω @ V_GS = 10 V, I_D = 18 A - Enables <1.5 W conduction loss at 31 A continuous drain current under heatsinked conditions.
Q_g typ	70 nC - Determines gate drive power requirement; compatible with common 1–2 A peak gate drivers in 100–500 kHz SMPS.
C_oss-eff	170 pF - Represents fixed capacitance charging during V_DS rise from 0 to 160 V; critical for ZVS timing and snubber sizing.
E_AS	420 mJ - Supports unclamped inductive switching without failure; enables robust operation in flyback and LLC primary side.
T_J range	−55 °C to +175 °C - Qualified for industrial and telecom environments with extended thermal cycling reliability.
R_θJC	0.75 °C/W - Enables direct thermal interface to heatsink; supports >150 W dissipation with ≤112.5 °C ΔT at 150 W.

Pinout & Package

IRFSL31N20DTRL uses the D2Pak-3L (TO-263AB) surface-mount package with exposed drain pad for thermal and electrical performance. The package measures 15.49 mm × 10.54 mm × 4.78 mm and is tape-and-reel packaged per EIA-418 for automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control terminal	Receives 10 V logic-level signal; requires <70 nC charge to fully enhance; Miller plateau at ~4.5 V.
2 - Drain	High-side power switch node	Connected to PCB copper pour for thermal conduction; electrically tied to exposed backside metal tab.
3 - Source	Power return and reference	Serves as local ground reference for gate driver; carries full load current and body diode reverse recovery charge.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	33/70 nC typical - Reduces Miller-induced shoot-through risk and improves controllability in high-dV/dt environments.
Fully characterized C_oss	150 pF @ V_DS = 160 V - Enables precise soft-switching timing prediction in phase-shifted full-bridge and LLC resonant converters.
Avalanche-rated	420 mJ single-pulse E_AS - Eliminates need for external clamping in inductive switching applications like PFC boost stages.
Optimized body diode	Q_rr = 1.7–2.6 µC, t_rr = 200–300 ns - Minimizes commutation loss in synchronous rectifiers and half-bridge freewheel paths.
Thermally enhanced D2Pak	R_θJC = 0.75 °C/W - Allows direct mounting to heatsink via soldered drain pad, reducing thermal resistance by >40% vs. TO-220.

Applications

Telecom 48 V Forward Converters	Industrial DC–DC Brick Supplies
Use Scenario: Primary-side switch in isolated 48 V input, 12 V/30 A output forward converter operating at 200–300 kHz. IC Role / Device Role / Timing Role: High-side hard-switched power switch handling 31 A peak primary current and 200 V blocking. Use Value: Low R_DS(on) and C_oss-eff reduce conduction and turn-off losses; avalanche rating absorbs leakage inductance spikes.	Use Scenario: Main switch in 24–48 V input, 5–28 V adjustable output industrial DC–DC module with overtemperature protection. IC Role / Device Role / Timing Role: Primary FET in active-clamp forward or asymmetrical half-bridge topology requiring stable 175 °C operation. Use Value: −55 to +175 °C rating ensures reliability across wide ambient ranges; D2Pak package enables compact layout with low-inductance source loop.
Server VRM High-Side Switch	Industrial Motor Drive Half-Bridge
Use Scenario: High-side switch in multiphase buck converter supplying CPU core voltage (0.8–1.8 V) at up to 200 A. IC Role / Device Role / Timing Role: Fast-switching, low-Q_g FET synchronized with gate driver for <50 ns dead-time control. Use Value: 70 nC Q_g and 16 ns t_d(on) support high-frequency operation; low C_rss minimizes dv/dt-induced false turn-on.	Use Scenario: Upper-leg switch in 24–48 V three-phase inverter driving BLDC motors in factory automation equipment. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 10–20 kHz PWM inverters with regenerative braking. Use Value: 124 A I_DM handles motor stall currents; body diode Q_rr enables controlled freewheeling without external Schottky.

Telecom 48 V Forward Converters

Industrial DC–DC Brick Supplies

Use Scenario: Primary-side switch in isolated 48 V input, 12 V/30 A output forward converter operating at 200–300 kHz.

IC Role / Device Role / Timing Role: High-side hard-switched power switch handling 31 A peak primary current and 200 V blocking.

Use Value: Low R_DS(on) and C_oss-eff reduce conduction and turn-off losses; avalanche rating absorbs leakage inductance spikes.

Use Scenario: Main switch in 24–48 V input, 5–28 V adjustable output industrial DC–DC module with overtemperature protection.

IC Role / Device Role / Timing Role: Primary FET in active-clamp forward or asymmetrical half-bridge topology requiring stable 175 °C operation.

Use Value: −55 to +175 °C rating ensures reliability across wide ambient ranges; D2Pak package enables compact layout with low-inductance source loop.

Server VRM High-Side Switch

Industrial Motor Drive Half-Bridge

Use Scenario: High-side switch in multiphase buck converter supplying CPU core voltage (0.8–1.8 V) at up to 200 A.

IC Role / Device Role / Timing Role: Fast-switching, low-Q_g FET synchronized with gate driver for <50 ns dead-time control.

Use Value: 70 nC Q_g and 16 ns t_d(on) support high-frequency operation; low C_rss minimizes dv/dt-induced false turn-on.

Use Scenario: Upper-leg switch in 24–48 V three-phase inverter driving BLDC motors in factory automation equipment.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 10–20 kHz PWM inverters with regenerative braking.

Use Value: 124 A I_DM handles motor stall currents; body diode Q_rr enables controlled freewheeling without external Schottky.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	200 V, 30 A, R_DS(on) = 0.085 Ω, Q_g = 75 nC, TO-220 package	Higher R_θJA (62 °C/W vs. 40 °C/W for D2Pak), no avalanche rating specified	Acceptable for lower-power or less thermally constrained designs where through-hole assembly is preferred.
IXTP30N20P	200 V, 30 A, R_DS(on) = 0.080 Ω, Q_g = 62 nC, TO-220 package, 300 mJ E_AS	Lower gate charge but smaller avalanche energy (300 mJ vs. 420 mJ); same thermal limits but higher R_θJC (1.0 °C/W)	Better for ultra-fast switching where gate drive loss dominates; less suitable for high-energy inductive loads.

Compared with STP30NF20 and IXTP30N20P, the IRFSL31N20DTRL offers superior avalanche ruggedness, lower thermal resistance, and D2Pak packaging for improved power density - making it optimal for space-constrained, high-reliability telecom and industrial SMPS designs.

Availability

IRFSL31N20DTRL is available at Aetrix Electronics and suitable for telecom power supplies, industrial DC–DC converters, and server VRMs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFSL31N20DTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRFSL31N20DTRL belongs to Infineon's legacy HEXFET® Power MOSFET family, engineered specifically for high-efficiency, high-frequency switched-mode power supplies in telecom infrastructure and industrial power conversion.

FAQ

What is the maximum continuous drain current for IRFSL31N20DTRL at 100°C case temperature?

The IRFSL31N20DTRL supports 21 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2Pak package and must be verified against actual board-level thermal performance using R_θJC = 0.75 °C/W and ambient conditions.

Does IRFSL31N20DTRL have avalanche capability, and how is it rated?

Yes, the IRFSL31N20DTRL is fully avalanche-rated with 420 mJ single-pulse avalanche energy (E_AS) at starting T_J = 25°C and 18 A avalanche current (I_AR). These values are measured per JEDEC standards and enable reliable operation in unclamped inductive switching circuits such as PFC boost stages without external snubbers.

What is the gate threshold voltage range for IRFSL31N20DTRL, and why does it matter?

The IRFSL31N20DTRL has a gate threshold voltage (V_GS(th)) range of 3.0 V to 5.5 V at I_D = 250 µA. This range ensures compatibility with standard 5 V and 10 V gate drivers while providing sufficient noise margin to prevent spurious turn-on in noisy power systems - critical for stable operation in telecom base station power supplies.

Can IRFSL31N20DTRL be used in synchronous rectification topologies?

Yes, the IRFSL31N20DTRL's body diode is characterized with 1.3 V forward voltage at 18 A and 25 °C, 200–300 ns reverse recovery time, and 1.7–2.6 µC Q_rr. These parameters make it suitable for synchronous rectification in forward and LLC converters when driven with appropriate gate timing to avoid cross-conduction.

What is the recommended footprint and thermal mounting method for IRFSL31N20DTRL?

The IRFSL31N20DTRL D2Pak-3L package requires a minimum recommended footprint per datasheet Figure 9: 11.43 mm × 8.89 mm copper pour for the drain pad, with solder mask defined for optimal thermal transfer. Mounting uses full-surface solder reflow on the exposed drain tab; thermal vias under the pad are strongly recommended to route heat to inner layers or heatsink.

IRFSL31N20DTRL Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 82mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2370 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

IRFSL31N20DTRL FAQ

1.How can I place an order for IRFSL31N20DTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL31N20DTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL31N20DTRL reliable?

The price and inventory of IRFSL31N20DTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL31N20DTRL is usually 5 days.

3.What payment methods are accepted for IRFSL31N20DTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL31N20DTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL31N20DTRL?

IRFSL31N20DTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL31N20DTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL31N20DTRL?

For technical support, including IRFSL31N20DTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL31N20DTRL requirements.

6.How does Aetrix verify that IRFSL31N20DTRL is sourced from the original manufacturer or authorized distributors?

All IRFSL31N20DTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL31N20DTRL meets industry standards.

7.What is the process for return or replacement of IRFSL31N20DTRL?

All IRFSL31N20DTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL31N20DTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL31N20DTRL part is unused and in its original packaging.

Return procedure for IRFSL31N20DTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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