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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFSL9N60APBF

Name: IRFSL9N60APBF
Brand: Vishay Siliconix
SKU: IRFSL9N60APBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL9N60APBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL9N60APBF.pdf

Description:: MOSFET N-CH 600V 9.2A I2PAK

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Product details

Overview

IRFSL9N60APBF from Vishay Siliconix is a 600 V, 9.2 A N-channel power MOSFET in I2PAK (TO-262) package, featuring 0.75 Ω R_DS(on) at V_GS = 10 V, 49 nC total gate charge, and 290 mJ single-pulse avalanche energy - designed for high-voltage, high-speed switching in offline SMPS main switch and active-clamped forward topologies.

For engineers reviewing the IRFSL9N60APBF datasheet, IRFSL9N60APBF pinout, IRFSL9N60APBF application, or IRFSL9N60APBF equivalent, this page delivers verified electrical specs, thermal performance data, body diode recovery characteristics (t_rr = 530–800 ns), and through-hole mounting guidance for reliable high-power design validation.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for ruggedness in repetitive and unclamped inductive switching. Its gate structure minimizes Q_g/Q_gd ratio (49 nC / 20 nC), enabling fast, low-loss turn-on/turn-off with controlled dv/dt (5.0 V/ns peak diode recovery rating).

The device integrates a co-packaged body diode with characterized reverse recovery (Q_rr = 3.0–4.4 μC, t_rr = 530–800 ns) and forward voltage (V_SD = 1.5 V at 9.2 A), supporting hard-switched topologies where diode conduction occurs during dead time.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 480 V DC bus operation with 25 % margin for voltage transients in offline SMPS
R_DS(on)	0.75 Ω @ V_GS = 10 V - enables ≤ 63 W conduction loss at 9.2 A continuous drain current
Q_g	49 nC - determines gate drive power requirement; compatible with standard 10 V logic-level drivers
E_AS	290 mJ - specifies single-pulse avalanche robustness under unclamped inductive load conditions
t_rr	530–800 ns - defines body diode recovery window impacting switching loss and EMI in hard-switched converters
R_thJC	0.75 °C/W - enables 170 W power dissipation at T_C = 25 °C with minimal heatsink interface resistance
I_D (T_C = 100 °C)	5.8 A - derated continuous current limit for sustained operation in compact enclosures

Pinout & Package

I2PAK (TO-262) package with isolated tab (drain-connected), through-hole mounting, and 3-pin configuration optimized for high-current PCB trace routing and thermal transfer to heatsink via case contact.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead)	Source (S)	Low-side return path; connects directly to PCB ground plane for minimal loop inductance
Pin 2 (Lead)	Gate (G)	Control input; requires <100 nA leakage isolation and <13 ns turn-on delay with 9.1 Ω gate resistor
Pin 3 (Tab)	Drain (D)	High-voltage output node; electrically connected to metal tab for direct heatsink mounting and thermal conduction

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	2.45 (49/20 nC) - reduces Miller-induced switching oscillation and improves gate drive efficiency
Fully characterized C_oss(eff)	96 pF (0–480 V) - enables accurate snubber design and soft-switching analysis in resonant converters
Avalanche-rated construction	290 mJ E_AS, 17 mJ E_AR - guarantees safe operation under transient overvoltage without external clamping
Body diode t_rr and Q_rr	530–800 ns / 3.0–4.4 μC - allows predictable dead-time optimization and reduced shoot-through risk
RoHS-compliant Pb-free	IRFSL9N60APBF suffix confirms lead-free and halogen-free compliance per Vishay Doc. 99912

Applications

Server PSU Main Switch	Industrial UPS Inverter
Use Scenario: Primary-side switching in 3 kW telecom rectifier with 380–400 V DC bus and 100 kHz PWM frequency. IC Role / Device Role / Timing Role: High-voltage N-channel power switch handling full load current in active-clamped forward topology. Use Value: 600 V rating and 290 mJ avalanche capability eliminate need for external RCD clamp, reducing BOM count and layout area.	Use Scenario: Bidirectional DC-link switching in 5 kVA online UPS with battery backup and zero-transfer-time switchover. IC Role / Device Role / Timing Role: Main inverter switch managing 480 V DC bus inversion to 230 V AC output under dynamic load steps. Use Value: Low 0.75 Ω R_DS(on) and 5.8 A derated current at 100 °C enable >96 % efficiency at full load without forced air cooling.
Solar Microinverter DC-DC Stage	EV Onboard Charger PFC
Use Scenario: Isolated DC-DC stage stepping up PV panel output (60–150 V) to 400 V DC link in single-phase microinverter. IC Role / Device Role / Timing Role: High-side switch in interleaved flyback or forward converter operating at 65–130 kHz. Use Value: Characterized C_iss/C_oss/C_rss values (1400/180/7.1 pF) support precise ZVS timing control and EMI filtering.	Use Scenario: Boost PFC switch in 6.6 kW OBC handling 240 V AC input and delivering 400 V DC to battery pack. IC Role / Device Role / Timing Role: Continuous-conduction-mode (CCM) boost switch with critical conduction mode (CrCM) transition capability. Use Value: 9.2 A continuous current and 37 A pulsed rating sustain 20 A RMS boost inductor current with 2× safety margin.

Server PSU Main Switch

Industrial UPS Inverter

Use Scenario: Primary-side switching in 3 kW telecom rectifier with 380–400 V DC bus and 100 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-voltage N-channel power switch handling full load current in active-clamped forward topology.

Use Value: 600 V rating and 290 mJ avalanche capability eliminate need for external RCD clamp, reducing BOM count and layout area.

Use Scenario: Bidirectional DC-link switching in 5 kVA online UPS with battery backup and zero-transfer-time switchover.

IC Role / Device Role / Timing Role: Main inverter switch managing 480 V DC bus inversion to 230 V AC output under dynamic load steps.

Use Value: Low 0.75 Ω R_DS(on) and 5.8 A derated current at 100 °C enable >96 % efficiency at full load without forced air cooling.

Solar Microinverter DC-DC Stage

EV Onboard Charger PFC

Use Scenario: Isolated DC-DC stage stepping up PV panel output (60–150 V) to 400 V DC link in single-phase microinverter.

IC Role / Device Role / Timing Role: High-side switch in interleaved flyback or forward converter operating at 65–130 kHz.

Use Value: Characterized C_iss/C_oss/C_rss values (1400/180/7.1 pF) support precise ZVS timing control and EMI filtering.

Use Scenario: Boost PFC switch in 6.6 kW OBC handling 240 V AC input and delivering 400 V DC to battery pack.

IC Role / Device Role / Timing Role: Continuous-conduction-mode (CCM) boost switch with critical conduction mode (CrCM) transition capability.

Use Value: 9.2 A continuous current and 37 A pulsed rating sustain 20 A RMS boost inductor current with 2× safety margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK60ZFP	600 V, 8.5 A, R_DS(on) = 0.75 Ω, Q_g = 42 nC, TO-220FP package	Lower thermal resistance not available; smaller package limits power dissipation to 125 W	Preferred where space-constrained PCBs preclude I2PAK footprint but lower power (≤1.5 kW) suffices
IXFH9N60P	600 V, 9.3 A, R_DS(on) = 0.75 Ω, Q_g = 52 nC, TO-247AC package	Higher Q_g increases gate drive loss; TO-247 offers superior heatsinking but larger board area	Chosen when maximum thermal performance is required and mechanical clearance permits TO-247 mounting

Compared with STP9NK60ZFP and IXFH9N60P, the IRFSL9N60APBF provides optimal balance of 170 W power handling, 0.75 °C/W R_thJC, and I2PAK through-hole reliability - making it ideal for industrial SMPS where thermal margin and assembly robustness outweigh ultra-low Q_g or largest-package cooling.

Availability

IRFSL9N60APBF is available at Aetrix Electronics and suitable for switch mode power supply (SMPS), uninterruptible power supply (UPS), and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRFSL9N60APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness and parametric consistency.

The IRFSL9N60APBF belongs to Vishay's high-voltage power MOSFET product line engineered for offline AC-DC conversion, featuring enhanced avalanche endurance and fully characterized dynamic parameters for mission-critical power systems.

FAQ

What is the maximum continuous drain current for IRFSL9N60APBF at 100 °C case temperature?

The IRFSL9N60APBF supports 5.8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the I2PAK package and ensures junction temperature remains within the -55 to +150 °C operating range. Designers must verify heatsink interface resistance and ambient airflow to maintain this rating in real-world operation. The IRFSL9N60APBF datasheet confirms this value under linear derating factor of 1.3 W/°C beyond 25 °C.

Does IRFSL9N60APBF have a fully characterized body diode, and what are its key recovery parameters?

Yes, the IRFSL9N60APBF includes a fully characterized intrinsic body diode with published reverse recovery time (t_rr = 530–800 ns), reverse recovery charge (Q_rr = 3.0–4.4 μC), and forward voltage (V_SD = 1.5 V at 9.2 A). These parameters are measured at T_J = 25 °C with di/dt = 100 A/μs and are essential for dead-time optimization and EMI prediction in hard-switched converters. The IRFSL9N60APBF datasheet explicitly lists these values in the Drain-Source Body Diode Characteristics section.

Is IRFSL9N60APBF suitable for surface-mount assembly, or is it strictly through-hole?

The IRFSL9N60APBF is designated for through-hole application only, as confirmed in the Applications section of the official datasheet. Its I2PAK (TO-262) package features bent leads intended for wave soldering or hand-soldering into plated-through holes, not reflow-compatible gull-wing or J-lead configurations. Attempting surface-mount assembly would compromise mechanical integrity, thermal path, and long-term reliability. The IRFSL9N60APBF datasheet states "This device is only for through-hole application" without qualification.

What is the gate-source threshold voltage range for IRFSL9N60APBF, and how does it affect drive circuit design?

The gate-source threshold voltage (V_GS(th)) for IRFSL9N60APBF is specified from 2.0 V to 4.0 V at T_J = 25 °C, meaning the device begins conducting at ≥2.0 V but achieves full enhancement only above ~4.0 V. This range necessitates a minimum 10 V gate drive to ensure low R_DS(on) (0.75 Ω) and avoid linear-mode operation. Drive circuits must deliver clean, noise-immune 10–15 V pulses with sufficient current to charge 49 nC total gate charge within nanoseconds. The IRFSL9N60APBF datasheet defines this parameter under V_DS = V_GS, I_D = 250 μA test conditions.

How does the avalanche energy rating of IRFSL9N60APBF compare to similar 600 V MOSFETs, and what does it mean for circuit protection?

The IRFSL9N60APBF delivers 290 mJ single-pulse avalanche energy (E_AS) and 17 mJ repetitive avalanche energy (E_AR), exceeding typical industry benchmarks for 600 V devices (e.g., 150–220 mJ E_AS). This rating validates operation under unclamped inductive switching events without external snubbers - critical in active-clamped forward and LLC resonant converters. It means the IRFSL9N60APBF can absorb transient energy from leakage inductance spikes without failure, provided pulse width and duty cycle remain within datasheet limits. The IRFSL9N60APBF datasheet confirms E_AS testing per note b (L = 6.8 mH, I_AS = 9.2 A).

IRFSL9N60APBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

IRFSL9N60APBF FAQ

1.How can I place an order for IRFSL9N60APBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL9N60APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL9N60APBF reliable?

The price and inventory of IRFSL9N60APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL9N60APBF is usually 5 days.

3.What payment methods are accepted for IRFSL9N60APBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL9N60APBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL9N60APBF?

IRFSL9N60APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL9N60APBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL9N60APBF?

For technical support, including IRFSL9N60APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL9N60APBF requirements.

6.How does Aetrix verify that IRFSL9N60APBF is sourced from the original manufacturer or authorized distributors?

All IRFSL9N60APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL9N60APBF meets industry standards.

7.What is the process for return or replacement of IRFSL9N60APBF?

All IRFSL9N60APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL9N60APBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL9N60APBF part is unused and in its original packaging.

Return procedure for IRFSL9N60APBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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