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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFSL9N60ATRR

Name: IRFSL9N60ATRR
Brand: Vishay Siliconix
SKU: IRFSL9N60ATRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL9N60ATRR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL9N60ATRR.pdf

Description:: MOSFET N-CH 600V 9.2A I2PAK

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Product details

Overview

IRFSL9N60ATRR from Vishay Siliconix is a 600 V, 9.2 A N-channel power MOSFET in I2PAK (TO-262) package, optimized for high-voltage switch-mode power supplies with R_DS(on) = 0.75 Ω at V_GS = 10 V, Q_g = 49 nC, and avalanche-rated E_AS = 290 mJ - used as main switch in active-clamped forward topologies.

For engineers reviewing the IRFSL9N60ATRR datasheet, IRFSL9N60ATRR pinout, IRFSL9N60ATRR application, or IRFSL9N60ATRR equivalent, this device supports through-hole mounting in offline SMPS designs requiring rugged dv/dt performance (5.0 V/ns), low gate charge drive simplicity, and validated unclamped inductive switching capability up to 9.2 A.

Technical Context

This MOSFET employs planar stripe silicon technology with fully characterized dynamic parameters including C_iss = 1400 pF, C_oss = 180 pF, and C_rss = 7.1 pF at V_DS = 25 V, enabling precise snubber and gate drive design. Its body diode exhibits t_rr = 530–800 ns and Q_rr = 3.0–4.4 μC under 100 A/μs di/dt conditions.

The device features enhanced gate oxide integrity and repetitive avalanche rating (I_AR = 9.2 A, E_AR = 17 mJ), with thermal resistance R_thJC = 0.75 °C/W enabling high-power dissipation (P_D = 170 W at T_C = 25 °C) in PCB-mounted configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V DC bus offline SMPS without derating
R_DS(on)	0.75 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 5.5 A continuous drain current
Q_g	49 nC - allows direct drive from standard PWM controllers without external gate buffers
E_AS	290 mJ - sustains single-pulse inductive energy during hard-switching fault events
t_r/t_f	25 ns / 22 ns - supports >200 kHz switching frequencies with controlled EMI generation
T_J Range	−55 °C to +150 °C - qualified for industrial and UPS environments with wide ambient variation
dv/dt Rating	5.0 V/ns - prevents spurious turn-on in high-dV/dt noise environments like motor drives

Pinout & Package

I2PAK (TO-262) package with isolated drain tab, 3-pin through-hole mounting, and 13.46 mm × 9.65 mm footprint. Thermal pad on drain connects directly to heatsink via case mounting surface.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 0–10 V logic-level gate drive; ±30 V absolute max rating protects against transient overvoltage
D (Drain)	High-side power output	Internally connected to metal tab; requires insulated mounting when heatsink is grounded
S (Source)	Power return reference	Common node for gate drive return and current sensing; ties to PCB ground plane

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	Q_gd = 20 nC of total 49 nC - reduces Miller-induced switching instability in high-dV/dt circuits
Characterized C_oss eff.	96 pF across 0–480 V - enables accurate soft-switching timing prediction in resonant converters
Body diode Q_rr	3.0–4.4 μC - minimizes reverse recovery losses in synchronous rectification and freewheeling paths
Avalanche ruggedness	Validated E_AS = 290 mJ and I_AR = 9.2 A - eliminates need for external clamping in cost-sensitive SMPS
RoHS-compliant construction	Lead (Pb)-free and halogen-free variant available (SiHFSL9N60A-GE3) - meets IPC-J-STD-609A Class 1

Applications

Active-Clamped Forward Converter	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side main switch in 1–3 kW telecom and server UPS systems operating from 375–400 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch handling full load current during line-interactive and double-conversion modes. Use Value: Avalanche rating ensures reliability during AC input dropout events where inductive energy must be absorbed without failure.	Use Scenario: Output inverter stage in online UPS units delivering clean 230 V AC during mains failure. IC Role / Device Role / Timing Role: Fast-switching power transistor in H-bridge topology generating sinusoidal output via SPWM. Use Value: Low Q_g and fast t_r/t_f reduce gate drive losses and enable >50 kHz carrier frequency for low THD output filtering.
Industrial SMPS	Motor Drive Snubber Circuit
Use Scenario: Main switch in 500 W–2 kW industrial power supplies powering PLCs, HMIs, and sensors. IC Role / Device Role / Timing Role: Hard-switched power FET operating at 65–100 kHz with fixed-frequency PWM control. Use Value: R_DS(on) = 0.75 Ω limits conduction loss to <4 W at full load, supporting natural convection cooling.	Use Scenario: Clamp switch in IGBT-based 3-phase motor inverters absorbing turn-off energy from stray inductance. IC Role / Device Role / Timing Role: Unclamped inductive switching device triggered synchronously with IGBT turn-off. Use Value: E_AS = 290 mJ handles peak energy from 6.8 mH inductive loads without external TVS or Zener clamps.

Active-Clamped Forward Converter

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side main switch in 1–3 kW telecom and server UPS systems operating from 375–400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch handling full load current during line-interactive and double-conversion modes.

Use Value: Avalanche rating ensures reliability during AC input dropout events where inductive energy must be absorbed without failure.

Use Scenario: Output inverter stage in online UPS units delivering clean 230 V AC during mains failure.

IC Role / Device Role / Timing Role: Fast-switching power transistor in H-bridge topology generating sinusoidal output via SPWM.

Use Value: Low Q_g and fast t_r/t_f reduce gate drive losses and enable >50 kHz carrier frequency for low THD output filtering.

Industrial SMPS

Motor Drive Snubber Circuit

Use Scenario: Main switch in 500 W–2 kW industrial power supplies powering PLCs, HMIs, and sensors.

IC Role / Device Role / Timing Role: Hard-switched power FET operating at 65–100 kHz with fixed-frequency PWM control.

Use Value: R_DS(on) = 0.75 Ω limits conduction loss to <4 W at full load, supporting natural convection cooling.

Use Scenario: Clamp switch in IGBT-based 3-phase motor inverters absorbing turn-off energy from stray inductance.

IC Role / Device Role / Timing Role: Unclamped inductive switching device triggered synchronously with IGBT turn-off.

Use Value: E_AS = 290 mJ handles peak energy from 6.8 mH inductive loads without external TVS or Zener clamps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW9NK90Z	900 V V_DS, R_DS(on) = 1.2 Ω, Q_g = 42 nC, TO-247 package	Higher voltage rating but higher R_DS(on); suited for 700 V DC bus systems	Select when system requires >650 V blocking margin or legacy TO-247 heatsink compatibility
IXFH30N60P	600 V V_DS, R_DS(on) = 0.18 Ω, Q_g = 120 nC, TO-247 package	Lower R_DS(on) but higher Q_g and larger footprint; requires gate driver buffering	Select when conduction loss dominates and gate drive strength permits higher Q_g handling

Compared with STW9NK90Z and IXFH30N60P, the IRFSL9N60ATRR offers optimal balance of voltage rating, gate drive simplicity, and thermal performance in I2PAK form factor - making it preferred for space-constrained 600 V SMPS where layout area and driver complexity are critical constraints.

Availability

IRFSL9N60ATRR is available at Aetrix Electronics and suitable for switch mode power supply (SMPS), uninterruptible power supply (UPS), and high-speed power switching applications requiring stable component supply, long-term manufacturing continuity, and RoHS-compliant sourcing.

Supply support for IRFSL9N60ATRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFSL9N60ATRR belongs to Vishay's high-voltage power MOSFET product line, engineered specifically for robust offline SMPS topologies including active-clamped forward and LLC resonant converters.

FAQ

What is the maximum continuous drain current rating for IRFSL9N60ATRR at 100 °C case temperature?

The IRFSL9N60ATRR has a continuous drain current rating of 5.8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the I2PAK package and ensures safe operation within its R_thJC = 0.75 °C/W junction-to-case thermal resistance. At lower case temperatures, the device supports up to 9.2 A continuously.

Does IRFSL9N60ATRR support surface-mount assembly?

No, the IRFSL9N60ATRR is designed exclusively for through-hole mounting in I2PAK (TO-262) package. The datasheet explicitly states "This device is only for through-hole application", and its leadform, thermal tab geometry, and mechanical dimensions align with wave-solder and hand-solder processes - not reflow-compatible SMT profiles.

What is the typical gate-source threshold voltage range for IRFSL9N60ATRR?

The gate-source threshold voltage (V_GS(th)) for IRFSL9N60ATRR is specified as 2.0 V minimum to 4.0 V maximum at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing false triggering from noise below 2 V.

Can IRFSL9N60ATRR be used in synchronous rectification topologies?

The IRFSL9N60ATRR is not optimized for synchronous rectification due to its relatively high R_DS(on) (0.75 Ω) and body diode recovery characteristics (t_rr = 530–800 ns, Q_rr = 3.0–4.4 μC). It is intended for high-side switching roles; dedicated low-R_DS(on), fast-recovery MOSFETs are recommended for secondary-side synchronous rectification.

What is the peak diode recovery dv/dt rating for IRFSL9N60ATRR?

The peak diode recovery dv/dt rating for IRFSL9N60ATRR is 5.0 V/ns, measured under specified test conditions (T_J = 25 °C, I_SD ≤ 9.2 A, di/dt ≤ 50 A/μs). This parameter quantifies the device's immunity to spurious turn-on during body diode commutation and is critical for stable operation in hard-switched converters.

IRFSL9N60ATRR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

IRFSL9N60ATRR FAQ

1.How can I place an order for IRFSL9N60ATRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL9N60ATRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL9N60ATRR reliable?

The price and inventory of IRFSL9N60ATRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL9N60ATRR is usually 5 days.

3.What payment methods are accepted for IRFSL9N60ATRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL9N60ATRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL9N60ATRR?

IRFSL9N60ATRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL9N60ATRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL9N60ATRR?

For technical support, including IRFSL9N60ATRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL9N60ATRR requirements.

6.How does Aetrix verify that IRFSL9N60ATRR is sourced from the original manufacturer or authorized distributors?

All IRFSL9N60ATRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL9N60ATRR meets industry standards.

7.What is the process for return or replacement of IRFSL9N60ATRR?

All IRFSL9N60ATRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL9N60ATRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL9N60ATRR part is unused and in its original packaging.

Return procedure for IRFSL9N60ATRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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