Vishay Siliconix IRFU014

Overview

IRFU014 from Vishay Siliconix is a 60 V, 7.7 A N-channel enhancement-mode power MOSFET in straight-lead IPAK (TO-251) package, optimized for through-hole mounting in DC-DC converters, motor control, and load switching. It delivers R_DS(on) = 0.20 Ω at V_GS = 10 V, Q_g = 11 nC, and supports unclamped inductive switching with E_AS = 27.4 mJ.

For engineers reviewing the IRFU014 datasheet, IRFU014 pinout, IRFU014 application, or IRFU014 equivalent, this page provides verified electrical specs, thermal derating data, body diode recovery characteristics, PCB-mount power dissipation limits (2.5 W), and real-world switching timing (t_r = 50 ns, t_f = 19 ns) - all confirmed for the IRFU014 variant specifically.

Technical Context

The IRFU014 is a third-generation silicon-based planar MOSFET designed for ruggedized operation in hard-switched topologies. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures reliable turn-on with standard 10 V logic-level drivers, while its low output capacitance (C_oss = 160 pF) and reverse transfer capacitance (C_rss = 29 pF) reduce switching losses and improve EMI performance.

It features an integrated body diode with t_rr = 70–140 ns and Q_rr = 0.20–0.40 μC, enabling moderate-frequency freewheeling in buck and half-bridge circuits. Thermal resistance R_thJA = 50 °C/W (PCB mount) and R_thJC = 5.0 °C/W allow stable operation up to T_J = 150 °C under controlled board layout conditions.

Key Specifications

Pinout & Package

IRFU014 uses the IPAK (TO-251) straight-lead through-hole package with three terminals: Gate (G), Drain (D), and Source (S). The drain is internally connected to the exposed thermal pad on the bottom surface, requiring direct solder connection to a copper pour for thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFR014, the IRFU014 offers superior mechanical retention and simplified thermal pad access in through-hole layouts, while SiHFU014 adds regulatory compliance without altering performance - making IRFU014 the optimal choice for field-serviceable, thermally demanding, or non-RoHS-constrained applications.

Availability

IRFU014 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC conversion, and high-reliability load switching requiring stable component supply across extended production lifecycles.

Supply support for IRFU014 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and manufacturability.

The IRFU014 belongs to Vishay's third-generation power MOSFET family, engineered for cost-effective, high-reliability switching in industrial, automotive, and computing power systems where thermal robustness and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current for IRFU014 at 100 °C case temperature?

The IRFU014 supports 4.9 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This value reflects linear derating from 7.7 A at 25 °C using a factor of 0.20 W/°C. Operation above this current requires active cooling or reduced duty cycle to maintain T_J ≤ 150 °C. The IRFU014 datasheet confirms this limit applies specifically to the straight-lead IPAK variant.

Does IRFU014 have avalanche capability, and how is it specified?

Yes, the IRFU014 is rated for single-pulse avalanche energy of 27.4 mJ under defined test conditions (V_DD = 25 V, I_AS = 7.7 A, T_J = 25 °C). This rating is validated per JEDEC standards and allows the IRFU014 to safely absorb inductive energy during unclamped inductive switching events without failure - a key advantage over non-rated MOSFETs in relay or motor drive applications.

What is the gate threshold voltage range for IRFU014, and why does it matter?

The IRFU014 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This ensures full enhancement with standard 5 V or 10 V logic-level drivers while preventing accidental turn-on from noise. The specification is confirmed for the IRFU014 variant in the "Specifications" section of Vishay document 91263, and directly impacts gate drive circuit design and noise immunity.

Can IRFU014 be used in parallel with other MOSFETs, and what ensures current sharing?

Yes, the IRFU014 supports paralleling due to its positive temperature coefficient of R_DS(on). As junction temperature rises, on-resistance increases - causing current to naturally redistribute among parallel devices. This behavior is inherent to the silicon process and confirmed across the IRFU014 product family, enabling scalable current handling without external balancing components.

What is the recommended PCB footprint and thermal pad layout for IRFU014?

Vishay recommends a minimum copper area of 1" square (FR-4) connected directly to the drain tab for the IRFU014, achieving R_thJA = 50 °C/W. Specific pad dimensions are provided in Application Note 826 for TO-252, but adapted for TO-251: 6.35 mm × 6.73 mm thermal pad with ≥ 0.5 mm solder mask clearance. This layout is validated for the IRFU014's IPAK package and essential for sustaining 2.5 W power dissipation at ambient.