Vishay Siliconix IRFU014PBF

Overview

IRFU014PBF from Vishay Siliconix is a 60 V, 7.7 A N-channel power MOSFET in TO-251 (IPAK) through-hole package, featuring 0.20 Ω R_DS(on) at V_GS = 10 V, 11 nC total gate charge, and 27.4 mJ single-pulse avalanche energy-designed for DC-DC converters, motor control, and power supply switching circuits.

For engineers reviewing the IRFU014PBF datasheet, IRFU014PBF pinout, IRFU014PBF application, or IRFU014PBF equivalent, this page delivers verified package mapping (TO-251/IPAK), confirmed thermal resistance (R_thJA = 50 °C/W on PCB mount), body diode recovery specs (t_rr = 70–140 ns), dV/dt rating (4.5 V/ns), and absolute maximum ratings including 31 A pulsed drain current and -55 to +150 °C operating temperature range.

Technical Context

This third-generation power MOSFET uses planar V-groove technology to achieve low R_DS(on) while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (2.0–4.0 V) supports standard 10 V gate drive, and its dynamic parameters-including C_iss = 300 pF, C_oss = 160 pF, and Q_gd/Q_gs ratio of ~1.87-enable fast, controllable switching with minimal Miller effect.

The device integrates a robust intrinsic body diode with 7.7 A continuous source-drain current capability and 1.6 V forward voltage at 7.7 A, optimized for freewheeling and synchronous rectification roles. Thermal design is supported by a low junction-to-case resistance (R_thJC = 5.0 °C/W) and defined PCB-mount derating (2.5 W at T_A = 25 °C).

Key Specifications

Pinout & Package

IRFU014PBF uses the TO-251AA (IPAK) through-hole package with gull-wing leads, optimized for manual or wave-solder assembly. The package features an exposed drain pad on the bottom surface for thermal conduction to the PCB copper pour.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFU014PBF, IRFR014PbF trades mechanical robustness and PCB thermal performance for smaller footprint and SMT compatibility, while SiHFU014-GE3 offers identical performance with enhanced material compliance-making IRFU014PBF optimal for through-hole reliability-critical designs where thermal management via PCB copper is prioritized.

Availability

IRFU014PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and LED drivers requiring stable component supply across industrial OEM production cycles.

Supply support for IRFU014PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRFU/IRFR series targets cost-sensitive, medium-power switching applications-designed for high-volume industrial, automotive accessory, and consumer power systems where proven third-generation silicon performance meets stringent thermal and transient robustness requirements.

FAQ

What is the maximum continuous drain current for IRFU014PBF at 100 °C case temperature?

The maximum continuous drain current for IRFU014PBF is 4.9 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-251 package mounted on a standard PCB; the full 7.7 A rating applies only at T_C = 25 °C. Designers must verify junction temperature using R_thJC = 5.0 °C/W and actual power dissipation to ensure T_J remains ≤ 150 °C in the final layout.

Does IRFU014PBF have avalanche capability, and how is it rated?

Yes, IRFU014PBF is rated for single-pulse avalanche energy (E_AS) of 27.4 mJ under test conditions of V_DD = 25 V, starting T_J = 25 °C, L = 924 μH, R_g = 25 Ω, and I_AS = 7.7 A. This rating confirms ruggedness against inductive switching transients in relay drivers, solenoid controls, and flyback snubberless designs-though repetitive avalanche is not guaranteed and requires careful circuit-level validation.

What is the gate threshold voltage range for IRFU014PBF, and why does it matter for drive design?

The gate threshold voltage (V_GS(th)) for IRFU014PBF is 2.0–4.0 V at V_DS = V_GS and I_D = 250 μA. This range indicates the minimum gate voltage needed to begin channel conduction. For reliable enhancement-mode operation, gate drive must exceed 4.0 V-ideally ≥ 10 V-to achieve the specified 0.20 Ω R_DS(on). Logic-level drivers (e.g., 3.3 V or 5 V) may yield higher on-resistance and increased conduction loss, so IRFU014PBF is best paired with 10 V gate drivers.

How does the body diode performance of IRFU014PBF compare to external Schottky diodes in flyback applications?

IRFU014PBF's intrinsic body diode has V_SD = 1.6 V at 7.7 A and t_rr = 70–140 ns, which is slower and higher-drop than typical 0.5 V Schottky diodes-but avoids extra component count and layout area. In low-frequency (<100 kHz) flyback aux supplies, its integrated diode reduces BOM cost and improves reliability; however, for high-efficiency or high-frequency designs, an external Schottky or synchronous rectifier IC may be preferable to minimize conduction and recovery losses.

Can IRFU014PBF be paralleled with identical units, and what design considerations apply?

Yes, IRFU014PBF is designed for ease of paralleling, as noted in its features list. Key considerations include matched gate drive impedance (identical R_g per device), symmetrical PCB layout to minimize loop inductance imbalance, and thermal coupling via shared copper pour. The positive temperature coefficient of R_DS(on) promotes current sharing, but gate charge mismatch (Q_g = 11 nC max) requires tight unit-to-unit V_GS(th) tolerance (2.0–4.0 V) and adequate gate drive strength to avoid dynamic imbalance during switching transitions.