Vishay Siliconix IRFU020PBF
- Part No.:
- IRFU020PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IRFU020PBF.pdf
- Description:
- MOSFET N-CH 60V 14A TO251AA
- Quantity:
- Payment:

- Shipping:

Inventory:5,779
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Product details
Overview
IRFU020PBF from Vishay Siliconix is a 60 V, 14 A N-channel power MOSFET in DPAK (TO-252) package with 0.10 Ω RDS(on) at VGS = 10 V, 25 nC total gate charge, and 91 mJ single-pulse avalanche energy-designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFU020PBF datasheet, IRFU020PBF pinout, IRFU020PBF application, or IRFU020PBF equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics, PCB-mount power dissipation limits, and validated surface-mount compatibility per JEDEC TO-252 standards.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon geometry to achieve low conduction loss while maintaining rugged unclamped inductive switching capability. Its 5.5 V/ns peak diode recovery dV/dt rating supports reliable operation in fast-switching topologies with high di/dt transients.
The device features a fully rated internal body diode with 88–180 ns reverse recovery time (trr), 0.29–0.64 μC Qrr, and 1.5 V forward voltage at 14 A-enabling synchronous rectification and freewheeling without external diode supplementation in many mid-power applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage; defines safe operating range in buck, flyback, and half-bridge topologies. |
| RDS(on) @ VGS = 10 V | 0.10 Ω - Low on-resistance enables <1.4 W conduction loss at 14 A continuous current; critical for thermal management in compact layouts. |
| Qg | 25 nC - Total gate charge determines drive strength requirement; compatible with standard logic-level gate drivers (e.g., TC4420, UCC27531). |
| EAS | 91 mJ - Single-pulse avalanche energy rating allows robustness against inductive kickback without snubbers in relay/motor drive circuits. |
| TJ Range | −55 °C to +150 °C - Extended junction temperature range supports operation in sealed enclosures or high-ambient industrial environments. |
| RthJA (PCB mount) | 50 °C/W - Thermal resistance when mounted on 1" square FR-4 PCB; enables 2.5 W ambient-rated power dissipation without heatsink. |
| ID @ TC = 100 °C | 9.0 A - Derated continuous drain current at elevated case temperature; informs thermal design margin for sustained loads. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; compatible with vapor phase, infrared, and wave soldering per JEDEC MS-012.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level signal to fully enhance channel; requires ≤25 nC charge for full turn-on; sensitive to ESD (±20 V max). |
| D (Drain) | High-side power output | Connected to exposed copper pad on bottom of package; serves as primary heat path and high-voltage node in switching circuits. |
| S (Source) | Reference/return node | Common return for gate drive and load current; forms Kelvin connection for accurate current sensing in high-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 5.5 V/ns - Enables stable operation during rapid voltage transitions without spurious turn-on in noisy power systems. |
| Fast switching | 13 ns turn-on delay + 58 ns rise time - Reduces switching losses in PWM frequencies up to 500 kHz for efficient SMPS designs. |
| Ease of paralleling | Positive RDS(on) temperature coefficient - Ensures current sharing stability across multiple IRFU020PBF devices in parallel arrays. |
| Simple drive requirements | Logic-level compatible (VGS(th) = 2.0–4.0 V) - Operates directly from microcontroller GPIO or low-voltage gate drivers without level-shifting. |
| Ruggedized construction | 91 mJ EAS + 56 A pulsed drain current - Withstands repetitive inductive energy spikes in motor gate drivers and solenoid controls. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down regulation from 48 V bus to 12 V for industrial I/O modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250 kHz PWM frequency. Use Value: 0.10 Ω RDS(on) minimizes conduction loss; 25 nC Qg ensures clean edge timing with standard gate driver ICs. |
Use Scenario: H-bridge half-bridge leg controlling 24 V, 8 A brushed motor in automated valve actuation. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current and freewheeling via integrated body diode. Use Value: 88–180 ns trr and 0.29–0.64 μC Qrr reduce switching loss during commutation; 91 mJ EAS absorbs inductive flyback. |
| AC-DC Auxiliary Supply | Hot-Swap Load Switch |
Use Scenario: Secondary-side synchronous rectifier in 60 W offline flyback adapter for PLC power rails. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to improve efficiency at light-to-moderate loads. Use Value: 1.5 V VSD at 14 A enables lower forward drop than discrete diodes; 50 °C/W RthJA (PCB mount) sustains 2.5 W dissipation without heatsink. |
Use Scenario: Inrush-limited 24 V power rail enable for field-replaceable sensor modules. IC Role / Device Role / Timing Role: Controlled high-side switch with soft-start via gate resistor network. Use Value: 60 V VDS provides margin above 24 V rail; ±20 V VGS rating supports robust gate protection circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR020TRPbF | Same die, identical RDS(on), Qg, and avalanche rating; differs only in tape-and-reel packaging (no lead-free marking). | No functional difference; suitable for same PCB layout and thermal design. | Select IRFR020TRPbF for legacy procurement or non-halogen-free compliance requirements. |
| SiHFR020-GE3 | Identical electrical specs and DPAK package; RoHS-compliant with halogen-free epoxy and matte tin plating. | Same mounting and drive requirements; preferred for automotive or green-electronics programs requiring full material compliance. | Choose SiHFR020-GE3 when full Vishay "GE3" environmental compliance is mandated by OEM or regulatory program. |
Compared with IRFU020PBF, IRFR020TRPbF offers identical performance in a non-halogen-free tape-and-reel format, while SiHFR020-GE3 delivers identical electrical behavior with certified lead-free/halogen-free construction-making all three suitable for drop-in replacement where packaging or compliance drives selection.
Availability
IRFU020PBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and hot-swap load switching requiring stable component supply and long-term production continuity.
Supply support for IRFU020PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.
The IRFU020PBF belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in industrial power systems and motor control applications.
FAQ
What is the maximum continuous drain current for IRFU020PBF at 100 °C case temperature?
The IRFU020PBF supports 9.0 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be validated against actual board layout and airflow conditions in the final design.
Does IRFU020PBF have a logic-level gate threshold?
Yes, the IRFU020PBF has a gate-source threshold voltage (VGS(th)) ranging from 2.0 V to 4.0 V at TJ = 25 °C, enabling direct drive from 3.3 V or 5 V microcontrollers without gate boosting-though full enhancement to 0.10 Ω RDS(on) requires VGS ≥ 10 V.
Can IRFU020PBF be used in parallel configurations?
Yes, the IRFU020PBF exhibits a positive RDS(on) temperature coefficient, which promotes natural current sharing among paralleled devices. For stable operation, matched gate drive routing and symmetrical PCB layout are required-verified in Vishay Application Note AN826 for DPAK thermal pad design.
What is the avalanche energy rating of IRFU020PBF?
The IRFU020PBF is rated for 91 mJ single-pulse avalanche energy (EAS) under test conditions of VDD = 25 V, starting TJ = 25 °C, L = 541 μH, and Rg = 25 Ω. This rating applies to unclamped inductive switching events and supports robustness in relay, solenoid, and motor drive applications.
Is IRFU020PBF RoHS and halogen-free compliant?
Yes, IRFU020PBF is lead (Pb)-free and halogen-free per Vishay's material categorization standard (document 99912). It meets RoHS Directive 2011/65/EU and IEC 61249-2-21:2011 requirements, with matte tin plating and halogen-free molding compound confirmed in the official Vishay product change notice.
IRFU020PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 640 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-251AA
IRFU020PBF FAQ
1.How can I place an order for IRFU020PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFU020PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFU020PBF reliable?
The price and inventory of IRFU020PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU020PBF is usually 5 days.
3.What payment methods are accepted for IRFU020PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU020PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFU020PBF?
IRFU020PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFU020PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFU020PBF?
For technical support, including IRFU020PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU020PBF requirements.
6.How does Aetrix verify that IRFU020PBF is sourced from the original manufacturer or authorized distributors?
All IRFU020PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU020PBF meets industry standards.
7.What is the process for return or replacement of IRFU020PBF?
All IRFU020PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU020PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFU020PBF part is unused and in its original packaging.
Return procedure for IRFU020PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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