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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFU110

Name: IRFU110
Brand: Vishay Siliconix
SKU: IRFU110
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU110

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU110.pdf

Description:: MOSFET N-CH 100V 4.3A TO251AA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFU110 from Vishay Siliconix is a 100 V, 4.3 A N-channel Power MOSFET in IPAK (TO-251) package with 0.54 Ω R_DS(on) at V_GS = 10 V, 8.3 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and power supply switching stages.

For engineers reviewing the IRFU110 datasheet, IRFU110 pinout, IRFU110 application, or IRFU110 equivalent, key selection criteria include its 5.0 °C/W junction-to-case thermal resistance, 75 mJ single-pulse avalanche energy, fast 6.9 ns turn-on delay, and compatibility with standard gate drivers due to simple drive requirements and low Q_gs/Q_gd ratio.

Technical Context

The IRFU110 operates as a unidirectional voltage-controlled switch with enhancement-mode N-channel topology, optimized for hard-switched topologies requiring ruggedness against unclamped inductive switching. Its dynamic dV/dt rating of 5.5 V/ns and body diode reverse recovery time of 100–200 ns support reliable operation in flyback and buck configurations.

It features third-generation silicon process enabling low on-resistance without sacrificing switching speed or avalanche robustness. The device supports parallel operation via matched threshold voltage (2.0–4.0 V) and low thermal resistance, and integrates a co-packaged body diode with 2.5 V forward drop at 1.5 A and 12 A pulsed capability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum blocking voltage for 24 V/48 V input systems with margin
R_DS(on) @ V_GS = 10 V	0.54 Ω - enables <1.0 W conduction loss at 1.4 A RMS in continuous conduction mode
Q_g	8.3 nC - determines gate driver current requirement (~0.8 mA avg. at 100 kHz)
I_D @ T_C = 25 °C	4.3 A - usable continuous current with heatsink; derates linearly above 25 °C
E_AS	75 mJ - withstands unclamped inductive energy in relay/snubberless designs
R_thJC	5.0 °C/W - allows direct mounting to PCB copper pour or small heatsink for thermal management
V_GS(th)	2.0–4.0 V - compatible with 3.3 V and 5 V logic-level gate drivers

Pinout & Package

IRFU110 uses the IPAK (TO-251) surface-mount package with straight leads and drain-connected tab for thermal and electrical connection. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control electrode; requires ≤ ±20 V bias; low 2.3 nC Q_gs enables fast turn-on
D	Drain	Main high-side current path; internally connected to metal tab for thermal dissipation
S	Source	Reference node for gate drive; source inductance LS = 6.0 nH affects switching ringing

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 4.3 A I_AR and 2.5 mJ E_AR without derating-enables robust overvoltage protection in inductive loads
Dynamic dV/dt rating	5.5 V/ns immunity prevents false turn-on during high-speed switching transients
Fast switching	6.9 ns t_d(on), 16 ns t_r, 15 ns t_d(off), 9.4 ns t_f - reduces switching losses below 200 kHz
Ease of paralleling	Matched V_GS(th) and positive R_DS(on) temperature coefficient ensure current sharing across multiple devices
Simple drive requirements	Low 8.3 nC Q_g and 2.3 nC Q_gs allow use with microcontroller GPIO or low-power gate drivers

Applications

DC-DC Buck Converter	Brushed DC Motor Driver
Use Scenario: Step-down regulation from 48 V bus to 12 V for industrial sensors and actuators. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 100–500 kHz. Use Value: 0.54 Ω R_DS(on) limits conduction loss to <0.8 W at 1.3 A load; 75 mJ E_AS absorbs inductive kickback during PWM dead-time.	Use Scenario: H-bridge half-bridge leg controlling 24 V brushed motors in automated valves and HVAC dampers. IC Role / Device Role / Timing Role: Low-side switching element with body diode freewheeling during PWM off-cycle. Use Value: 2.5 V V_SD and 100–200 ns t_rr minimize freewheeling loss and reduce voltage overshoot; 5.0 °C/W R_thJC enables compact PCB thermal design.
AC-DC Auxiliary Supply	LED Constant-Current Driver
Use Scenario: Discrete flyback switch in offline 5–12 V auxiliary supplies for PLC I/O modules. IC Role / Device Role / Timing Role: Primary-side power switch handling 100 V reflected output voltage and leakage inductance spikes. Use Value: Repetitive avalanche rating sustains 2.5 mJ per cycle under no-load or short-circuit conditions; 5.5 V/ns dV/dt immunity prevents spurious turn-on from transformer coupling.	Use Scenario: Constant-current buck switch regulating 350 mA through high-brightness LED strings in signage and architectural lighting. IC Role / Device Role / Timing Role: PWM-controlled current regulator operating at 1–5 kHz with analog dimming interface. Use Value: 4.3 A I_D rating provides 12× headroom for surge currents; low Q_g ensures precise current step response with minimal gate drive power.

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down regulation from 48 V bus to 12 V for industrial sensors and actuators.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 100–500 kHz.

Use Value: 0.54 Ω R_DS(on) limits conduction loss to <0.8 W at 1.3 A load; 75 mJ E_AS absorbs inductive kickback during PWM dead-time.

Use Scenario: H-bridge half-bridge leg controlling 24 V brushed motors in automated valves and HVAC dampers.

IC Role / Device Role / Timing Role: Low-side switching element with body diode freewheeling during PWM off-cycle.

Use Value: 2.5 V V_SD and 100–200 ns t_rr minimize freewheeling loss and reduce voltage overshoot; 5.0 °C/W R_thJC enables compact PCB thermal design.

AC-DC Auxiliary Supply

LED Constant-Current Driver

Use Scenario: Discrete flyback switch in offline 5–12 V auxiliary supplies for PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side power switch handling 100 V reflected output voltage and leakage inductance spikes.

Use Value: Repetitive avalanche rating sustains 2.5 mJ per cycle under no-load or short-circuit conditions; 5.5 V/ns dV/dt immunity prevents spurious turn-on from transformer coupling.

Use Scenario: Constant-current buck switch regulating 350 mA through high-brightness LED strings in signage and architectural lighting.

IC Role / Device Role / Timing Role: PWM-controlled current regulator operating at 1–5 kHz with analog dimming interface.

Use Value: 4.3 A I_D rating provides 12× headroom for surge currents; low Q_g ensures precise current step response with minimal gate drive power.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60Z	600 V V_DS, 1 A I_D, higher R_DS(on) (7.5 Ω), Zener-protected gate	Better suited for high-voltage flyback snubber circuits; not interchangeable in 100 V, >2 A loads	Select only when primary need is 600 V blocking with integrated gate protection-not for IRFU110's 100 V/4.3 A role
IRFZ44NPbF	55 V V_DS, 49 A I_D, lower R_DS(on) (0.028 Ω), TO-220 package	Higher current, lower voltage rating; larger footprint and different thermal path	Use where 55 V system voltage and higher current capacity are acceptable-and TO-220 mounting is feasible

Compared with STP1NK60Z and IRFZ44NPbF, the IRFU110 uniquely balances 100 V rating, 4.3 A current, IPAK footprint, and 0.54 Ω on-resistance-making it optimal for space-constrained 24–48 V industrial power stages where thermal performance and avalanche ruggedness are prioritized over ultra-low R_DS(on) or extreme voltage rating.

Availability

IRFU110 is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and LED drivers requiring stable component supply with consistent lead-free (Pb-free) and halogen-free compliance per Vishay S24-0422-Rev. D.

Supply support for IRFU110 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global semiconductor manufacturer specializing in discrete semiconductors, passive components, and sensors, with emphasis on reliability, ruggedness, and application-specific optimization.

The IRFU110 belongs to Vishay's third-generation Power MOSFET family engineered for cost-effective, high-ruggedness switching in industrial power conversion-emphasizing dynamic dV/dt immunity, repetitive avalanche capability, and ease of parallel operation.

FAQ

What is the maximum continuous drain current for IRFU110 at 100 °C case temperature?

The IRFU110 supports 2.7 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the IPAK package and must be validated against actual board layout, copper area, and ambient conditions. The IRFU110 datasheet specifies a linear derating factor of 0.2 W/°C above 25 °C, and the IRFU110's R_thJC of 5.0 °C/W enables predictable junction temperature estimation in thermally managed designs.

Does IRFU110 have a built-in body diode, and what are its key parameters?

Yes, the IRFU110 integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key parameters include 2.5 V forward voltage (V_SD) at 1.5 A and 25 °C, 100–200 ns reverse recovery time (t_rr), and 0.44–0.88 μC reverse recovery charge (Q_rr). These values are measured with I_F = 5.6 A and dI/dt = 100 A/μs, making the IRFU110 suitable for freewheeling in low-frequency PWM applications-but not recommended for high-frequency synchronous rectification without external Schottky assistance.

Is IRFU110 pin-compatible with other IPAK-packaged MOSFETs like SiHFU110?

Yes, the IRFU110 is pin-compatible with SiHFU110, as both share identical IPAK (TO-251) package dimensions, terminal assignments (G-D-S), and mechanical footprint. Vishay explicitly lists SiHFU110 as an ordering variant in the same datasheet (S24-0422-Rev. D), confirming identical pinout, thermal characteristics, and absolute maximum ratings. Designers may substitute SiHFU110-GE3 for IRFU110PbF without layout changes, though minor parametric differences in R_DS(on) distribution or gate charge tolerance should be verified per lot.

What gate drive voltage is required to fully enhance IRFU110?

The IRFU110 achieves full enhancement at V_GS = 10 V, where its R_DS(on) is specified at 0.54 Ω. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, meaning it begins conducting significantly above ~3 V-but full on-state performance requires ≥10 V to minimize conduction loss. The IRFU110 is not a logic-level MOSFET; using 3.3 V or 5 V gate drive results in substantially higher R_DS(on) and thermal stress, and is not recommended for continuous operation.

Can IRFU110 be used in avalanche mode for energy clamping?

Yes, the IRFU110 is explicitly rated for repetitive avalanche operation with I_AR = 4.3 A and E_AR = 2.5 mJ per pulse, and single-pulse avalanche energy of 75 mJ. This capability allows safe clamping of inductive energy in relay drivers, solenoid controls, and snubberless flyback converters-provided pulse width and duty cycle remain within limits defined in Figure 11 and 12 of the IRFU110 datasheet. Operation beyond these boundaries risks permanent device failure.

IRFU110 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 540mOhm @ 900mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

IRFU110 FAQ

1.How can I place an order for IRFU110 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU110 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU110 reliable?

The price and inventory of IRFU110 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU110 is usually 5 days.

3.What payment methods are accepted for IRFU110?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU110 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU110?

IRFU110 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU110 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU110?

For technical support, including IRFU110 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU110 requirements.

6.How does Aetrix verify that IRFU110 is sourced from the original manufacturer or authorized distributors?

All IRFU110 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU110 meets industry standards.

7.What is the process for return or replacement of IRFU110?

All IRFU110 units undergo pre-shipment inspection (PSI). If there is an issue with IRFU110, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU110 part is unused and in its original packaging.

Return procedure for IRFU110:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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