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Vishay Siliconix IRFU1N60A
- Part No.:
- IRFU1N60A
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IRFU1N60A.pdf
- Description:
- MOSFET N-CH 600V 1.4A TO251AA
- Quantity:
- Payment:
- Shipping:
Inventory:4,120
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Product details
Overview
IRFU1N60A from Vishay Siliconix is a 600 V, 1.4 A N-channel power MOSFET in DPAK (TO-252) package, featuring 7.0 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and 93 mJ single-pulse avalanche energy - designed for high-voltage, low-current switching in flyback SMPS and PFC stages.
For engineers reviewing the IRFU1N60A datasheet, IRFU1N60A pinout, IRFU1N60A application, or IRFU1N60A equivalent, this device is evaluated for unclamped inductive switching robustness, body diode recovery performance (trr = 290–440 ns), and thermal management in PCB-mounted configurations with RthJA = 50 °C/W.
Technical Context
This MOSFET employs planar high-voltage silicon technology optimized for ruggedness in repetitive and single-pulse avalanche conditions. Its gate charge profile (Qgd = 8.1 nC, Qgs = 2.7 nC) supports predictable turn-on/turn-off timing in hard-switched topologies with 2.15 Ω gate resistance.
The integrated body diode exhibits VSD = 1.6 V at IS = 1.4 A and controlled reverse recovery (Qrr = 510–760 μC), enabling reliable operation in discontinuous conduction mode (DCM) flyback converters without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Withstands full-line rectified input in universal-input SMPS up to 265 VAC. |
| RDS(on) max | 7.0 Ω at VGS = 10 V - Sets conduction loss ceiling of ~10 W at 1.4 A DC, suitable for low-power (<30 W) isolated converters. |
| Qg max | 14 nC - Enables drive with standard gate drivers (e.g., UCC27531) without requiring high-current buffers. |
| EAS | 93 mJ - Supports unclamped inductive switching at IAS = 1.4 A, critical for transformer reset reliability. |
| trr | 290–440 ns - Limits diode reverse recovery stress during hard commutation in flyback primary switches. |
| RthJC | 3.5 °C/W - Enables direct heatsinking via drain pad; junction-to-case path dominates thermal design over ambient. |
| ID continuous | 1.4 A at TC = 25 °C - Derates linearly to 0.89 A at 100 °C case temperature per 0.28 W/°C factor. |
Pinout & Package
DPAK (TO-252) package with exposed drain pad on bottom side for thermal and electrical connection; three-terminal surface-mount configuration optimized for high-voltage isolation and PCB copper area heat spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; low Qg enables fast switching with minimal driver loss. |
| D (Drain) | High-side power terminal | Connected to transformer primary and HV bus; electrically tied to exposed thermal pad for low-inductance, low-RthJC path. |
| S (Source) | Reference and return node | Forms local ground reference for gate drive; source inductance directly impacts dV/dt immunity and switching stability. |
Key Features
| Feature | Design Value |
|---|---|
| Low gate charge (Qg = 14 nC) | Reduces gate driver power dissipation and simplifies layout by minimizing required gate loop area. |
| Fully characterized avalanche capability | Validated EAS = 93 mJ and IAR = 1.4 A enable robust transformer reset without external clamping circuits. |
| Controlled body diode recovery | Qrr = 510–760 μC and trr = 290–440 ns minimize voltage overshoot and EMI during diode commutation. |
| Enhanced dV/dt ruggedness | Rated peak diode recovery dV/dt = 3.8 V/ns - resists false turn-on in high-noise, high-dV/dt environments like PFC boost stages. |
| Thermally optimized DPAK | RthJC = 3.5 °C/W allows >30 W power dissipation with modest heatsinking, supporting compact board-level thermal design. |
Applications
| Switch Mode Power Supply (Flyback) | Power Factor Correction (PFC) |
|---|---|
Use Scenario: Primary-side switch in low-power offline flyback converters (≤30 W) with universal AC input (85–265 VAC). IC Role / Device Role: High-voltage switching element handling full rectified line voltage and transformer magnetizing current. Use Value: 600 V VDS rating and 93 mJ EAS ensure safe operation during transformer reset without snubber losses. |
Use Scenario: Switching device in boost-type active PFC front-end for industrial power supplies and LED drivers. IC Role / Device Role: Controls energy transfer from AC line to bulk capacitor while shaping input current waveform. Use Value: Low Qg (14 nC) and stable RDS(on) support high-frequency (≥65 kHz) operation with minimal gate drive overhead. |
| Uninterruptible Power Supply (UPS) | DC-DC Isolated Converter |
Use Scenario: Inverter stage switch in line-interactive UPS systems converting 12–48 V DC battery to 120/230 V AC output. IC Role / Device Role: Half-bridge or push-pull switch operating in square-wave or modified sine-wave topology. Use Value: Repetitive avalanche rating (IAR = 1.4 A, EAR = 3.6 mJ) sustains reliability under load transients and short-circuit events. |
Use Scenario: Primary-side switch in isolated DC-DC modules (e.g., 48 V input to 12 V output) used in telecom and industrial control. IC Role / Device Role: High-side switch in forward or active-clamp forward topologies requiring precise timing and low conduction loss. Use Value: Tight VGS(th) range (2.0–4.0 V) and low Ciss (229 pF) improve PWM control accuracy and reduce switching delay variation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR1N60APbF | Same die, identical RDS(on), Qg, and avalanche specs; packaged in IPAK (TO-251) with vertical leadform instead of DPAK's gull-wing leads. | Requires different PCB footprint and reflow profile due to TO-251 thermal pad geometry and mounting orientation. | Select IRFR1N60APbF only when mechanical constraints favor through-hole-compatible surface mount or higher standoff height is needed. |
| SiHFU1N60A-GE3 | Same Vishay family, Pb-free/halogen-free construction; identical electrical specs but qualified to JEDEC JESD47 reliability standards with enhanced moisture sensitivity level (MSL 1). | Preferred for RoHS-compliant, high-reliability industrial production where extended shelf life and reflow robustness are mandatory. | Choose SiHFU1N60A-GE3 for new designs targeting IPC Class 2/3 assembly and long-term supply continuity with green compliance. |
Compared with IRFR1N60APbF, the IRFU1N60A offers lower-profile DPAK mounting and better thermal coupling to PCB copper; versus SiHFU1N60A-GE3, it lacks MSL 1 qualification and halogen-free certification but remains suitable for cost-sensitive commercial-grade designs.
Availability
IRFU1N60A is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and power factor correction circuits requiring stable component supply across industrial and embedded power design cycles.
Supply support for IRFU1N60A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The IRFU1N60A belongs to Vishay's high-voltage planar MOSFET product line, engineered for ruggedness in unclamped inductive switching and optimized for cost-effective, low-power AC/DC conversion.
FAQ
What is the maximum continuous drain current rating for IRFU1N60A at 100 °C case temperature?
The IRFU1N60A supports 0.89 A continuous drain current at TC = 100 °C, derived from its 1.4 A rating at 25 °C and linear derating factor of 0.28 W/°C. This value reflects thermal limits under PCB-mount conditions with RthJA = 50 °C/W, not ambient-rated operation.
Does IRFU1N60A have a fully specified body diode for synchronous rectification?
No - the IRFU1N60A body diode is characterized for reverse recovery (trr = 290–440 ns, Qrr = 510–760 μC) and forward voltage (VSD = 1.6 V at 1.4 A), but it is not rated for synchronous rectification duty. Its recovery behavior is optimized for flyback reset, not bidirectional conduction.
Can IRFU1N60A be driven directly by a 3.3 V microcontroller GPIO?
No - the IRFU1N60A has a gate threshold voltage range of 2.0–4.0 V and requires 10 V for full enhancement (RDS(on) ≤ 7.0 Ω). A 3.3 V drive yields high RDS(on) and excessive conduction loss; a dedicated gate driver or level-shifting circuit is required.
What is the recommended minimum PCB pad layout for IRFU1N60A in DPAK package?
Vishay recommends a 0.224" × 0.420" (5.69 mm × 10.67 mm) copper pad for the drain thermal pad, with 0.055" (1.397 mm) soldermask opening and thermal vias to internal ground planes. Full details are in Application Note 826 (Document 72594).
Is IRFU1N60A suitable for use in automotive applications?
The IRFU1N60A is not AEC-Q101 qualified and is intended for industrial, commercial, and consumer power supplies. It lacks automotive-specific stress testing, failure rate reporting, and temperature cycling validation; Vishay's Automotive Qualified MOSFETs (e.g., SQ series) should be used instead.
IRFU1N60A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7Ohm @ 840mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 229 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 36W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-251AA
IRFU1N60A FAQ
1.How can I place an order for IRFU1N60A through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFU1N60A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFU1N60A reliable?
The price and inventory of IRFU1N60A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU1N60A is usually 5 days.
3.What payment methods are accepted for IRFU1N60A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU1N60A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFU1N60A?
IRFU1N60A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFU1N60A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFU1N60A?
For technical support, including IRFU1N60A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU1N60A requirements.
6.How does Aetrix verify that IRFU1N60A is sourced from the original manufacturer or authorized distributors?
All IRFU1N60A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU1N60A meets industry standards.
7.What is the process for return or replacement of IRFU1N60A?
All IRFU1N60A units undergo pre-shipment inspection (PSI). If there is an issue with IRFU1N60A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFU1N60A part is unused and in its original packaging.
Return procedure for IRFU1N60A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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