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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFU210PBF

Name: IRFU210PBF
Brand: Vishay Siliconix
SKU: IRFU210PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU210PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU210PBF.pdf

Description:: MOSFET N-CH 200V 2.6A TO251AA

Quantity:: RFQ Add To RFQ list

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Inventory:11,306

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Product details

Overview

IRFU210PBF from Vishay Siliconix is a 200 V, 2.6 A N-channel power MOSFET in straight-lead IPAK (TO-251) package, optimized for through-hole mounting in DC-DC converters, motor control, and power supply switching circuits with R_DS(on) = 1.5 Ω at V_GS = 10 V and 8.2 nC total gate charge.

For engineers reviewing the IRFU210PBF datasheet, IRFU210PBF pinout, IRFU210PBF application, or IRFU210PBF equivalent, this part supports ruggedized switching in industrial power stages where repetitive avalanche capability (E_AS = 95 mJ), fast turn-on delay (8.2 ns), and body diode recovery time (150–310 ns) are critical selection criteria.

Technical Context

This third-generation power MOSFET employs planar VDMOS technology with optimized cell layout to achieve low on-resistance while maintaining high dV/dt immunity (5.0 V/ns) and robust unclamped inductive switching performance. Its gate threshold voltage (2.0–4.0 V) ensures compatibility with standard 10 V gate drivers.

The device integrates a fast-recovery body diode (t_rr = 150–310 ns, Q_rr = 0.60–1.4 μC) and features internal source/drain inductances (L_S = 7.5 nH, L_D = 4.5 nH) that influence high-speed switching behavior and layout-sensitive ringing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Maximum blocking voltage for use in 100–150 V bus applications with safety margin
R_DS(on)	1.5 Ω @ V_GS = 10 V - Determines conduction loss in continuous 1.6 A load conditions
Q_g	8.2 nC - Gate drive energy requirement affecting driver sizing and switching loss
I_D (T_C = 25 °C)	2.6 A - Continuous current rating under heatsink-mounted conditions
E_AS	95 mJ - Single-pulse avalanche energy tolerance for inductive load transients
t_r/t_f	17 ns / 8.9 ns - Rise/fall times defining minimum achievable switching period in hard-switched topologies
V_SD	2.0 V @ I_S = 2.6 A - Forward voltage of integrated body diode impacting synchronous rectification losses

Pinout & Package

IRFU210PBF uses the IPAK (TO-251) straight-lead through-hole package with gull-wing leads, designed for PCB mounting with thermal relief pads per Vishay Application Note 826. The drain tab is electrically connected to lead 2 and serves as primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (G)	Gate	Control terminal requiring ≤ ±20 V drive; 1.8 nC gate-source charge defines Miller plateau timing
Lead 2 (D)	Drain	Main power output terminal; internally bonded to exposed drain tab for thermal conduction
Lead 3 (S)	Source	Power return and reference node; connects to gate driver ground; 7.5 nH internal inductance affects shoot-through risk

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under unclamped inductive switching (I_AR = 2.7 A, E_AR = 2.5 mJ) without external snubbers
Dynamic dV/dt rating	5.0 V/ns immunity prevents false turn-on in noisy high-side switch configurations
Fast switching	8.2 ns turn-on delay + 17 ns rise time supports >500 kHz PWM in SMPS designs
Through-hole IPAK package	Provides mechanical robustness and thermal stability vs. surface-mount alternatives in high-vibration environments
Low Q_gd/Q_g ratio	4.5/8.2 ≈ 55% - Reduces Miller effect, improving controllability during hard commutation

Applications

DC-DC Converter Primary Switch	Brushed DC Motor Driver
Use Scenario: High-efficiency 12–48 V input buck converter delivering up to 3 A output in industrial PLC power modules. IC Role / Device Role / Timing Role: Main switching element operating at 250–500 kHz with synchronous rectification disabled. Use Value: 1.5 Ω R_DS(on) limits conduction loss to <1.5 W at 2.6 A, while 95 mJ E_AS handles transformer leakage energy without clamping.	Use Scenario: H-bridge driver for 24 V brushed motors in automated gate actuators with bidirectional stall protection. IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and enabling regenerative braking via body diode conduction. Use Value: 2.0 V V_SD and 150 ns t_rr minimize braking energy loss and reduce voltage overshoot during current reversal.
AC-DC Auxiliary Supply	LED Driver Power Switch
Use Scenario: Flyback auxiliary supply powering control circuitry in 3 kW server PSUs with 370 V DC link. IC Role / Device Role / Timing Role: Self-supplied startup switch handling 200 V transient surges during brownout recovery. Use Value: 200 V V_DS rating and 5.0 V/ns dV/dt immunity prevent spurious turn-on during line transients and EMI events.	Use Scenario: Constant-current boost LED driver for street lighting with 72 V string voltage and 700 mA output. IC Role / Device Role / Timing Role: High-side switch modulating current through inductor-based regulation loop. Use Value: 8.2 nC Q_g enables efficient gate driving from low-power MCU GPIOs, reducing BOM cost vs. dedicated drivers.

DC-DC Converter Primary Switch

Brushed DC Motor Driver

Use Scenario: High-efficiency 12–48 V input buck converter delivering up to 3 A output in industrial PLC power modules.

IC Role / Device Role / Timing Role: Main switching element operating at 250–500 kHz with synchronous rectification disabled.

Use Value: 1.5 Ω R_DS(on) limits conduction loss to <1.5 W at 2.6 A, while 95 mJ E_AS handles transformer leakage energy without clamping.

Use Scenario: H-bridge driver for 24 V brushed motors in automated gate actuators with bidirectional stall protection.

IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and enabling regenerative braking via body diode conduction.

Use Value: 2.0 V V_SD and 150 ns t_rr minimize braking energy loss and reduce voltage overshoot during current reversal.

AC-DC Auxiliary Supply

LED Driver Power Switch

Use Scenario: Flyback auxiliary supply powering control circuitry in 3 kW server PSUs with 370 V DC link.

IC Role / Device Role / Timing Role: Self-supplied startup switch handling 200 V transient surges during brownout recovery.

Use Value: 200 V V_DS rating and 5.0 V/ns dV/dt immunity prevent spurious turn-on during line transients and EMI events.

Use Scenario: Constant-current boost LED driver for street lighting with 72 V string voltage and 700 mA output.

IC Role / Device Role / Timing Role: High-side switch modulating current through inductor-based regulation loop.

Use Value: 8.2 nC Q_g enables efficient gate driving from low-power MCU GPIOs, reducing BOM cost vs. dedicated drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR210PbF	DPAK (TO-252) surface-mount package; identical electrical specs but different thermal path and layout requirements	Requires rework of PCB footprint and thermal pad design; not suitable for through-hole assembly lines	Select when board space is constrained and automated SMT placement is available
STP2NK20Z	200 V, 1.8 A, R_DS(on) = 2.2 Ω, Q_g = 4.5 nC; SuperMESH™ process with lower gate charge but higher on-resistance	Better suited for ultra-low-power standby supplies where switching loss dominates conduction loss	Select when gate drive capability is limited and average current <1.5 A

Compared with IRFU210PBF, IRFR210PbF offers identical performance in a surface-mount package requiring PCB redesign, while STP2NK20Z trades higher R_DS(on) for significantly lower Q_g, favoring low-duty-cycle or low-current applications where gate drive efficiency is prioritized over conduction loss.

Availability

IRFU210PBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and LED lighting systems requiring stable component supply across multi-year production cycles.

Supply support for IRFU210PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness and reliability.

The IRFU210PBF belongs to Vishay's third-generation power MOSFET family engineered for high-voltage industrial switching applications demanding repetitive avalanche capability and fast dynamic performance.

FAQ

What is the maximum junction temperature for IRFU210PBF?

The IRFU210PBF has an operating junction and storage temperature range of -55 °C to +150 °C. This 150 °C maximum junction temperature allows sustained operation in enclosed industrial enclosures with ambient temperatures up to 85 °C when properly heatsinked, as confirmed by its 5.0 °C/W junction-to-case thermal resistance rating.

Does IRFU210PBF support logic-level gate drive?

No, IRFU210PBF is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, and it requires a minimum 10 V gate-source voltage to achieve its specified R_DS(on) of 1.5 Ω. Driving it with 3.3 V or 5 V logic signals will result in incomplete turn-on and excessive conduction losses.

Can IRFU210PBF be used in parallel configurations?

Yes, IRFU210PBF is explicitly designed for ease of paralleling, as noted in its official features list. Its positive temperature coefficient of R_DS(on) ensures current sharing stability across multiple devices, and its low gate charge (8.2 nC) simplifies matched gate drive implementation in high-current applications like motor phase legs.

What is the body diode reverse recovery charge (Q_rr) of IRFU210PBF?

The body diode reverse recovery charge Q_rr of IRFU210PBF is specified as 0.60–1.4 μC at T_J = 25 °C, I_F = 3.3 A, and dI/dt = 100 A/μs. This value directly impacts switching loss and voltage overshoot during hard-commutation events, making it critical for snubberless flyback or active clamp designs.

Is IRFU210PBF RoHS-compliant and halogen-free?

Yes, IRFU210PBF is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and Vishay's material categorization standard documented in www.vishay.com/doc?99912. The "PBF" suffix explicitly denotes Pb-free construction, and full compliance data is available in Vishay's official material declarations.

IRFU210PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 2.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 1.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 140 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

IRFU210PBF FAQ

1.How can I place an order for IRFU210PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU210PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU210PBF reliable?

The price and inventory of IRFU210PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU210PBF is usually 5 days.

3.What payment methods are accepted for IRFU210PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU210PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU210PBF?

IRFU210PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU210PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU210PBF?

For technical support, including IRFU210PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU210PBF requirements.

6.How does Aetrix verify that IRFU210PBF is sourced from the original manufacturer or authorized distributors?

All IRFU210PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU210PBF meets industry standards.

7.What is the process for return or replacement of IRFU210PBF?

All IRFU210PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU210PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU210PBF part is unused and in its original packaging.

Return procedure for IRFU210PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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