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Vishay Siliconix IRFU214PBF
- Part No.:
- IRFU214PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IRFU214PBF.pdf
- Description:
- MOSFET N-CH 250V 2.2A TO251AA
- Quantity:
- Payment:
- Shipping:
Inventory:2,855
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Product details
Overview
IRFU214PBF from Vishay Siliconix is a 250 V, 2.2 A N-channel power MOSFET in TO-251 (IPAK) through-hole package, featuring 2.0 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating up to 2.2 A - designed for mid-power switching in offline AC-DC converters, motor control stages, and industrial power supplies.
For engineers reviewing the IRFU214PBF datasheet, IRFU214PBF pinout, IRFU214PBF application, or IRFU214PBF equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery characteristics (trr = 190–390 ns), PCB-mount power dissipation (2.5 W), and direct alternative part comparisons with technical differentiation.
Technical Context
This device belongs to Vishay's third-generation high-voltage power MOSFET family optimized for ruggedness and fast switching. It supports unclamped inductive switching with 190 mJ single-pulse avalanche energy and operates reliably across –55 °C to +150 °C junction temperature range.
The IRFU214PBF uses planar stripe DMOS technology with integrated body diode, exhibits 4.8 V/ns peak diode recovery dV/dt capability, and maintains stable threshold voltage (2.0–4.0 V) and low gate leakage (±100 nA) under rated conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - supports primary-side switching in 230 VAC offline SMPS without derating |
| RDS(on) @ VGS = 10 V | 2.0 Ω - enables <2.2 A continuous conduction with ≤5 W I²R loss at 100 °C case |
| Qg | 8.2 nC - determines gate drive strength requirement; compatible with standard 1-A peak drivers |
| ID (TC = 100 °C) | 1.4 A - defines maximum sustained current under thermally constrained PCB-mount conditions |
| EAS | 190 mJ - quantifies single-event unclamped inductive energy handling without failure |
| trr | 190–390 ns - sets minimum dead-time requirement in synchronous rectification or half-bridge topologies |
| RthJA (PCB mount) | 50 °C/W - establishes thermal design margin: ΔTJ-A = 125 °C at 2.5 W dissipation on 1" FR-4 |
Pinout & Package
IRFU214PBF uses the TO-251AA (IPAK) through-hole package with three terminals: Gate (G), Drain (D), and Source (S). The drain tab is internally connected to the die substrate and serves as the primary heat path; mounting requires mechanical anchoring and thermal via placement beneath the tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Receives 10 V logic-level drive; 1.8 nC Qgs ensures fast turn-on with minimal Miller effect |
| D | Drain power terminal | High-side switch node; connects to load/inductor; electrically tied to metal tab for thermal conduction |
| S | Source return path | Reference node for gate drive; carries full load current; must be low-inductance connection to minimize switching noise |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 2.2 A IAR, 2.5 mJ EAR - enables robust operation in inductive load switching without external snubbers |
| Dynamic dV/dt rating | 4.8 V/ns - suppresses false turn-on during high-slew-rate voltage transients in bridge configurations |
| Fast switching | td(on) = 7.0 ns, tf = 7.0 ns - reduces switching losses in 100–500 kHz SMPS designs |
| Low Qgd/Qg ratio | 4.5/8.2 = 55 % - improves hard-switching efficiency and reduces Miller plateau duration |
| Through-hole IPAK package | TO-251AA outline with 8.89 mm × 6.35 mm footprint - provides mechanical stability and higher creepage vs. SMD DPAK |
Applications
| AC-DC Power Supply | DC Motor Control |
|---|---|
|
Use Scenario: Primary-side switching transistor in 15–30 W offline flyback converter. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from universal AC input to isolated DC output. Use Value: 250 V VDS rating accommodates reflected output voltage plus line surge; 2.0 Ω RDS(on) limits conduction loss to <1.2 W at 1.3 A RMS. |
Use Scenario: Low-side driver in brushed DC motor H-bridge for industrial actuators. IC Role / Device Role / Timing Role: Ground-referenced power switch enabling bidirectional current flow through motor windings. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM commutation; 190–390 ns trr allows safe dead-time setting below 1 μs. |
| LED Driver | Industrial PLC Output Stage |
|
Use Scenario: Constant-current switch in isolated LED driver for street lighting. IC Role / Device Role / Timing Role: Regulated current source switch modulating LED string current at 100–1000 Hz. Use Value: 2.2 A continuous rating supports >10 W LED loads; body diode VSD = 2.0 V ensures low forward drop during freewheeling phase. |
Use Scenario: Solid-state relay replacement in programmable logic controller digital output module. IC Role / Device Role / Timing Role: Load-switching element driving solenoids, contactors, or indicator lamps from microcontroller GPIO. Use Value: Through-hole IPAK mounting ensures vibration resistance; ±20 V VGS rating tolerates transient coupling in noisy factory environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR214PbF | Same silicon die, DPAK (TO-252) surface-mount package; RthJC = 5.0 °C/W identical, but RthJA = 110 °C/W (vs. 50 °C/W for IRFU214PBF PCB mount) | Requires reflow-compatible layout; unsuitable for high-vibration environments where through-hole anchoring is mandatory | Select IRFR214PbF only when board space constraints prohibit TO-251 footprint or automated SMT assembly is required. |
| STP2NK25Z | 250 V, 2.5 A, RDS(on) = 2.2 Ω, Qg = 7.5 nC; Zener-protected gate; no specified avalanche rating | Lacks repetitive avalanche qualification; lower dV/dt immunity (not specified); gate protection adds 10–15 % cost | Choose STP2NK25Z only if gate ESD robustness is prioritized over inductive fault tolerance in low-energy control circuits. |
Compared with IRFU214PBF, IRFR214PbF trades mechanical reliability for SMT compatibility and higher ambient thermal resistance, while STP2NK25Z sacrifices avalanche ruggedness for integrated gate protection - making IRFU214PBF optimal for thermally constrained, vibration-prone, inductive-load applications requiring proven fault energy absorption.
Availability
IRFU214PBF is available at Aetrix Electronics and suitable for AC-DC power supplies, DC motor controllers, and industrial PLC output stages requiring stable component supply, long-term lifecycle support, and traceable sourcing from Vishay-authorized channels.
Supply support for IRFU214PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and high-reliability manufacturing.
The IRFU214PBF belongs to Vishay's third-generation high-voltage power MOSFET product line, engineered specifically for cost-sensitive, thermally demanding industrial and power-conversion applications where avalanche capability and through-hole mechanical integrity are critical.
FAQ
What is the maximum continuous drain current for IRFU214PBF at 100 °C case temperature?
The IRFU214PBF supports 1.4 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects linear derating from 2.2 A at 25 °C using a factor of 0.20 W/°C, and assumes proper PCB copper area per Vishay's recommended pad layout for TO-251.
Does IRFU214PBF have avalanche capability, and how is it rated?
Yes, the IRFU214PBF is repetitively avalanche rated: IAR = 2.2 A and EAR = 2.5 mJ under defined pulse conditions (pulse width limited by TJ(max)). It also supports single-pulse avalanche energy of 190 mJ, validated per the unclamped inductive test circuit in Figure 12 of the datasheet.
What is the gate threshold voltage range for IRFU214PBF, and why does it matter in circuit design?
The IRFU214PBF has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C. This variation affects minimum gate drive voltage needed for reliable turn-on - systems using 3.3 V logic must verify sufficient overdrive margin, while 5 V or 10 V drives ensure full enhancement across process and temperature extremes.
Can IRFU214PBF be used in parallel with identical devices, and what design considerations apply?
Yes, the IRFU214PBF is designed for ease of paralleling due to its positive RDS(on) temperature coefficient and matched dynamic parameters. Key requirements include symmetrical gate drive paths, individual gate resistors (≥10 Ω), and balanced source inductance - all critical to prevent current imbalance and thermal runaway during high-current operation.
What is the body diode reverse recovery time (trr) of IRFU214PBF, and how does it impact switching performance?
The IRFU214PBF body diode exhibits trr = 190–390 ns at TJ = 25 °C, IF = 2.7 A, and dI/dt = 100 A/μs. This parameter directly influences required dead time in half-bridge or synchronous rectifier topologies - insufficient dead time risks shoot-through, especially above 100 kHz switching frequencies.
IRFU214PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-251AA
IRFU214PBF FAQ
1.How can I place an order for IRFU214PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFU214PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFU214PBF reliable?
The price and inventory of IRFU214PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU214PBF is usually 5 days.
3.What payment methods are accepted for IRFU214PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU214PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFU214PBF?
IRFU214PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFU214PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFU214PBF?
For technical support, including IRFU214PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU214PBF requirements.
6.How does Aetrix verify that IRFU214PBF is sourced from the original manufacturer or authorized distributors?
All IRFU214PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU214PBF meets industry standards.
7.What is the process for return or replacement of IRFU214PBF?
All IRFU214PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU214PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFU214PBF part is unused and in its original packaging.
Return procedure for IRFU214PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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