Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFU220PBF

Name: IRFU220PBF
Brand: Vishay Siliconix
SKU: IRFU220PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFU220PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU220PBF.pdf

Description:: MOSFET N-CH 200V 4.8A TO251AA

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,496

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFU220PBF from Vishay Siliconix is a 200 V, 4.8 A N-channel power MOSFET in TO-251 (IPAK) through-hole package, featuring 0.80 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and industrial power switching where ruggedness and fast switching are required.

For engineers reviewing the IRFU220PBF datasheet, IRFU220PBF pinout, IRFU220PBF application, or IRFU220PBF equivalent, this page delivers verified package mapping (TO-251/IPAK), confirmed thermal derating (0.33 W/°C), avalanche energy (4.2 mJ), body diode recovery (150–300 ns), and direct alternative comparisons with real parameter-level differences.

Technical Context

This third-generation TrenchFET® MOSFET uses planar silicon technology optimized for low conduction loss and robust unclamped inductive switching. Its gate threshold voltage (2.0–4.0 V) supports standard 10 V gate drive, while dynamic dV/dt rating (5.0 V/ns) ensures noise immunity in high-speed switching environments.

The device integrates a fast-recovery body diode (t_rr = 150–300 ns, Q_rr = 0.91–1.8 μC) and exhibits linear SOA behavior up to 100 µs pulse width. Junction-to-case thermal resistance is 3.0 °C/W, enabling efficient heatsinking in PCB-mounted industrial power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports 170 V DC bus designs with 15% margin for transients
R_DS(on)	0.80 Ω @ V_GS = 10 V - enables ≤3.8 W conduction loss at 4.8 A continuous drain current
Q_g	14 nC - determines gate driver current requirement (~1.4 A peak for 10 ns rise time)
I_D (T_C = 100 °C)	3.0 A - defines maximum sustained current under typical heatsink-limited conditions
E_AR	4.2 mJ - quantifies safe repetitive avalanche energy handling without degradation
t_rr	150–300 ns - sets minimum dead-time requirement in synchronous buck or half-bridge topologies
R_thJC	3.0 °C/W - allows direct thermal interface to heatsink with predictable junction temperature rise

Pinout & Package

IRFU220PBF uses the TO-251AA (IPAK) through-hole package with three leads: Gate (G), Drain (D), and Source (S). The drain tab is internally connected to lead 2 (Drain) and serves as the primary thermal path; mounting requires mechanical anchoring and thermal via placement under the tab per Vishay's recommended pad layout.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (G)	Gate	High-impedance control input; requires <100 nA leakage budget and 14 nC charge for full enhancement
Lead 2 (D)	Drain	Main power output terminal; electrically and thermally tied to exposed drain tab for heatsinking
Lead 3 (S)	Source	Power return reference; forms common node with gate drive return and body diode cathode

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation in inductive load switching without external snubbers (E_AR = 4.2 mJ)
Dynamic dV/dt rating	5.0 V/ns immunity prevents false turn-on during high-slew-rate voltage transients
Fast switching	7.2 ns turn-on delay + 22 ns rise time supports >500 kHz PWM in hard-switched topologies
Body diode t_rr & Q_rr	150–300 ns / 0.91–1.8 μC enables reduced dead-time and lower crossover loss in synchronous rectification
Through-hole IPAK package	TO-251AA mechanical stability supports high-vibration environments and manual rework capability

Applications

DC-DC Converter	Motor Drive Stage
Use Scenario: 200 V input isolated flyback or forward converter delivering 12 V/3 A output in industrial power supplies. IC Role / Device Role / Timing Role: Primary-side switching MOSFET handling high-voltage DC bus switching at 100–300 kHz. Use Value: 0.80 Ω R_DS(on) minimizes conduction loss at full load; 4.2 mJ E_AR absorbs leakage inductance spikes without clamping.	Use Scenario: Low-cost 24–48 V brushed DC motor controller for HVAC actuators or conveyor modules. IC Role / Device Role / Timing Role: High-side or H-bridge switch controlling bidirectional motor current up to 4.8 A continuous. Use Value: 5.0 V/ns dV/dt rating prevents shoot-through during rapid bus transitions; TO-251 mechanical robustness withstands motor vibration.
LED Driver	Industrial Power Sequencer
Use Scenario: Constant-current LED string driver for high-bay lighting operating from 150–200 V DC bus. IC Role / Device Role / Timing Role: Switching element in buck or buck-boost regulator regulating LED current with PWM dimming. Use Value: Fast 22 ns rise time enables precise current regulation at high PWM frequencies; body diode Q_rr < 1.8 μC reduces switching loss during freewheeling.	Use Scenario: Power sequencing circuit enabling controlled ramp-up of multiple voltage rails in PLC backplanes. IC Role / Device Role / Timing Role: Soft-start switch isolating downstream rails until upstream supply stabilizes. Use Value: Repetitive avalanche rating protects against inrush-induced voltage overshoot; 3.0 °C/W R_thJC allows stable thermal performance during extended soft-start pulses.

DC-DC Converter

Motor Drive Stage

Use Scenario: 200 V input isolated flyback or forward converter delivering 12 V/3 A output in industrial power supplies.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET handling high-voltage DC bus switching at 100–300 kHz.

Use Value: 0.80 Ω R_DS(on) minimizes conduction loss at full load; 4.2 mJ E_AR absorbs leakage inductance spikes without clamping.

Use Scenario: Low-cost 24–48 V brushed DC motor controller for HVAC actuators or conveyor modules.

IC Role / Device Role / Timing Role: High-side or H-bridge switch controlling bidirectional motor current up to 4.8 A continuous.

Use Value: 5.0 V/ns dV/dt rating prevents shoot-through during rapid bus transitions; TO-251 mechanical robustness withstands motor vibration.

LED Driver

Industrial Power Sequencer

Use Scenario: Constant-current LED string driver for high-bay lighting operating from 150–200 V DC bus.

IC Role / Device Role / Timing Role: Switching element in buck or buck-boost regulator regulating LED current with PWM dimming.

Use Value: Fast 22 ns rise time enables precise current regulation at high PWM frequencies; body diode Q_rr < 1.8 μC reduces switching loss during freewheeling.

Use Scenario: Power sequencing circuit enabling controlled ramp-up of multiple voltage rails in PLC backplanes.

IC Role / Device Role / Timing Role: Soft-start switch isolating downstream rails until upstream supply stabilizes.

Use Value: Repetitive avalanche rating protects against inrush-induced voltage overshoot; 3.0 °C/W R_thJC allows stable thermal performance during extended soft-start pulses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR220PbF	Same die, DPAK (TO-252) surface-mount package; R_thJA = 50 °C/W (PCB mount) vs. IRFU220PBF's 110 °C/W	Requires reflow-compatible layout; unsuitable for through-hole assembly or manual prototyping	Select when automated SMT production and space-constrained board area are priorities
STP20NM20	200 V, 20 A, 0.12 Ω R_DS(on), TO-220 package; higher current but larger footprint and no avalanche rating	Lacks repetitive avalanche capability; requires external protection in inductive loads	Select only for low-duty-cycle, non-inductive switching where higher current and lower R_DS(on) outweigh ruggedness needs

Compared with IRFU220PBF, IRFR220PbF offers identical electrical specs in a surface-mount form ideal for volume production, while STP20NM20 trades avalanche ruggedness for lower on-resistance and higher current-making IRFU220PBF the optimal choice for reliability-critical through-hole power switching.

Availability

IRFU220PBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, LED drivers, and power sequencers requiring stable component supply across long-lifecycle programs.

Supply support for IRFU220PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRFU220PBF belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for high-voltage industrial switching applications demanding avalanche tolerance, fast switching, and thermal stability.

FAQ

What is the maximum continuous drain current for IRFU220PBF at 100 °C case temperature?

The maximum continuous drain current for IRFU220PBF is 3.0 A when the case temperature (T_C) is 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 4.8 A rating at 25 °C and must be used with the 0.33 W/°C linear derating factor to ensure safe operation under sustained load conditions. IRFU220PBF maintains this current capability while preserving its 200 V V_DS rating and 0.80 Ω R_DS(on).

Does IRFU220PBF have avalanche capability, and how is it rated?

Yes, IRFU220PBF is repetitively avalanche rated with E_AR = 4.2 mJ and I_AR = 4.8 A under defined test conditions (V_DD = 50 V, T_J = 25 °C, L = 14 mH, R_g = 25 Ω). This rating allows the device to safely absorb inductive energy without failure during unclamped inductive switching events. IRFU220PBF's avalanche performance is validated per JEDEC standards and documented in Figure 12c of its datasheet.

What is the gate threshold voltage range for IRFU220PBF, and why does it matter?

The gate threshold voltage (V_GS(th)) for IRFU220PBF is 2.0–4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental activation from noise or leakage. Because IRFU220PBF is not a logic-level MOSFET, it requires ≥5 V gate drive for partial conduction and ≥10 V for full enhancement-critical for designing robust gate drive circuits that avoid linear-mode operation.

How does the body diode performance of IRFU220PBF impact synchronous rectifier designs?

IRFU220PBF's body diode has t_rr = 150–300 ns and Q_rr = 0.91–1.8 μC, enabling reduced dead-time and lower switching losses in synchronous rectifier configurations. Its V_SD = 1.8 V at I_S = 4.8 A also limits forward conduction loss during freewheeling. These parameters make IRFU220PBF suitable for medium-frequency (<300 kHz) synchronous buck converters where diode recovery behavior directly affects efficiency-unlike standard rectifiers with slower recovery.

What is the thermal resistance from junction to case (R_thJC) for IRFU220PBF, and how is it used in thermal design?

The maximum junction-to-case thermal resistance (R_thJC) for IRFU220PBF is 3.0 °C/W, measured from junction to the drain tab. This value is used to calculate temperature rise from power dissipation: ΔT = P_D × R_thJC. For example, at 3.0 A and 0.80 Ω, conduction loss is ~7.2 W, resulting in ~21.6 °C rise above the heatsink temperature. IRFU220PBF's low R_thJC supports direct mounting to external heatsinks without thermal interface material in many industrial applications.

IRFU220PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 4.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 2.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 260 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

IRFU220PBF FAQ

1.How can I place an order for IRFU220PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU220PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU220PBF reliable?

The price and inventory of IRFU220PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU220PBF is usually 5 days.

3.What payment methods are accepted for IRFU220PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU220PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU220PBF?

IRFU220PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU220PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU220PBF?

For technical support, including IRFU220PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU220PBF requirements.

6.How does Aetrix verify that IRFU220PBF is sourced from the original manufacturer or authorized distributors?

All IRFU220PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU220PBF meets industry standards.

7.What is the process for return or replacement of IRFU220PBF?

All IRFU220PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU220PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU220PBF part is unused and in its original packaging.

Return procedure for IRFU220PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …