Vishay Siliconix IRFU224

Overview

IRFU224 from Vishay Siliconix is a 250 V, 3.8 A N-channel enhancement-mode power MOSFET in straight-lead IPAK (TO-251) package, rated for repetitive avalanche energy (4.2 mJ), with R_DS(on) = 1.1 Ω at V_GS = 10 V and total gate charge Q_g = 14 nC - used in DC-DC converters, motor control circuits, and industrial power switching where through-hole mounting and rugged unclamped inductive switching are required.

For engineers reviewing the IRFU224 datasheet, IRFU224 pinout, IRFU224 application, or IRFU224 equivalent, this page delivers verified electrical ratings, thermal derating behavior, body diode recovery characteristics (t_rr = 200–400 ns), avalanche capability, and direct-mount PCB thermal resistance (R_thJA = 50 °C/W on 1" FR-4), enabling accurate layout and reliability validation.

Technical Context

The IRFU224 employs third-generation TrenchFET® silicon technology optimized for fast switching and high ruggedness, featuring dynamic dV/dt rating up to 4.8 V/ns and intrinsic body diode with reverse recovery charge Q_rr = 0.93–1.9 μC. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, ensuring stable turn-on under standard 10 V gate drive.

Designed for through-hole mounting, the IRFU224 uses an IPAK (TO-251) leadframe with isolated drain tab and internal source/drain inductances (L_S = 7.5 nH, L_D = 4.5 nH), directly impacting switching waveform integrity and snubber design. It supports linear derating of 0.020 W/°C when PCB-mounted, with maximum power dissipation of 2.5 W at T_A = 25 °C.

Key Specifications

Pinout & Package

IRFU224 uses the IPAK (TO-251) straight-lead through-hole package with isolated drain tab. The package features three leads: Gate (G), Drain (D), and Source (S), arranged in G-D-S order when viewed from the front (marking side) with leads pointing downward.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFR224, the IRFU224 offers superior PCB-mounted thermal performance (50 vs. 110 °C/W R_thJA) and mechanical robustness, while SiHFU224-GE3 provides identical functionality with environmental compliance - making IRFU224 the optimal choice for vibration-prone, thermally constrained, or serviceable through-hole systems.

Availability

IRFU224 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter primary switching, and AC-DC power supply protection requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFU224 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability across industrial and automotive markets.

The IRFU224 belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for high-voltage switching applications demanding repetitive avalanche capability, fast dynamics, and through-hole mechanical stability.

FAQ

What is the maximum continuous drain current for IRFU224 at 100 °C case temperature?

The IRFU224 supports a continuous drain current of 2.4 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the IPAK package without heatsink; using a 1" FR-4 PCB increases effective power handling to 2.5 W at ambient, corresponding to ~2.25 A at R_DS(on) = 1.1 Ω. Always verify junction temperature with actual layout and airflow in the final design.

Does IRFU224 have a built-in body diode, and what are its key parameters?

Yes, the IRFU224 integrates a parasitic body diode inherent to its N-channel MOSFET structure. Key parameters include continuous source-drain current I_S = 3.8 A, pulsed current I_SM = 15 A, forward voltage V_SD = 1.8 V at I_S = 3.8 A and T_J = 25 °C, reverse recovery time t_rr = 200–400 ns, and reverse recovery charge Q_rr = 0.93–1.9 μC. These values are critical for flyback, synchronous rectification, and half-bridge freewheeling analysis.

Can IRFU224 be used in avalanche mode, and what are the safe operating limits?

Yes, the IRFU224 is explicitly rated for repetitive avalanche operation with I_AR = 3.8 A and E_AR = 4.2 mJ per pulse, and single-pulse avalanche energy E_AS = 130 mJ. Safe operation requires limiting pulse width per Fig. 11, maintaining T_J ≤ 150 °C, and respecting V_DD ≤ V_DS and dI/dt ≤ 90 A/μs. Avalanche testing must follow the unclamped inductive test circuit in Fig. 12.

What is the gate threshold voltage range for IRFU224, and how does it affect drive requirements?

The IRFU224 has a gate-source threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V at I_D = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V logic-level drivers, but mandates gate drive ≥ 5 V to guarantee full enhancement. At V_GS = 10 V, R_DS(on) is guaranteed ≤ 1.1 Ω; lower gate voltages increase conduction loss significantly due to the nonlinear transconductance curve.

Is IRFU224 compatible with lead-free soldering processes?

The standard IRFU224PbF variant is lead-free compliant and qualified for peak reflow temperatures up to 260 °C for 10 seconds, per JEDEC J-STD-020. Its IPAK (TO-251) package supports both wave and hand-soldering. For fully halogen-free and RoHS-compliant builds, specify SiHFU224-GE3, which shares identical electrical and thermal specs while meeting stricter environmental standards.