Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRFU224PBF

Part No.:
IRFU224PBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIRFU224PBF.pdf
Description:
MOSFET N-CH 250V 3.8A TO251AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,479

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFU224PBF from Vishay Siliconix is a 250 V, 3.8 A N-channel power MOSFET in TO-251 (IPAK) through-hole package, featuring 1.1 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and repetitive avalanche rating up to 3.8 A - designed for robust switching in DC-DC converters, motor drivers, and industrial power supplies.

For engineers reviewing the IRFU224PBF datasheet, IRFU224PBF pinout, IRFU224PBF application, or IRFU224PBF equivalent, this part delivers verified avalanche ruggedness, fast 7 ns turn-on delay and 12 ns fall time, low 2.7 nC gate-source charge for efficient gate drive, and thermal performance validated under PCB-mount conditions with RthJA = 50 °C/W.

Technical Context

The IRFU224PBF employs third-generation planar vertical DMOS technology optimized for high-voltage switching with low conduction loss and controlled dynamic behavior. Its gate threshold voltage (2.0–4.0 V) supports standard 10 V logic-level drive, while its 4.8 V/ns peak diode recovery dV/dt rating ensures stable operation during fast inductive turn-off events.

Designed for unclamped inductive switching, the device sustains 130 mJ single-pulse avalanche energy and 4.2 mJ repetitive avalanche energy under defined test conditions (VDD = 50 V, IAS = 3.8 A). Its internal source and drain inductances (LS = 7.5 nH, LD = 4.5 nH) are characterized to support accurate switching waveform modeling in hard-switched topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 250 V - supports primary-side switching in offline SMPS up to 200 V DC bus with margin
RDS(on) 1.1 Ω max at VGS = 10 V, ID = 2.3 A - enables <1.2 W conduction loss at 3.3 A continuous current
Qg 14 nC max - determines gate driver current requirement (~1.4 mA avg for 100 kHz, 10 V swing)
ID (TC = 25 °C) 3.8 A continuous - defines safe operating area when mounted on 1" FR-4 PCB with 2.5 W dissipation limit
EAS 130 mJ single-pulse - allows reliable operation in flyback or buck converters without external snubbers
dV/dt (diode) 4.8 V/ns peak - mitigates false triggering during body diode commutation in half-bridge configurations
TJ range –55 to +150 °C - qualified for industrial ambient environments including motor control enclosures

Pinout & Package

IRFU224PBF uses the TO-251AA (IPAK) through-hole package with three leads: Gate (G), Drain (D), and Source (S). The package features a thermally enhanced die attach to the leadframe, enabling 2.5 W power dissipation on standard FR-4 PCBs. Mounting requires standard wave soldering or hand-soldering with 260 °C peak temperature for 10 s.

Pin/Terminal Circuit Role Design Meaning
G Gate control input Accepts 0–10 V logic-level signals; 100 nA leakage ensures low standby power in always-on systems
D High-side power switch node Connected to drain of internal MOSFET; rated for 250 V blocking and 15 A pulsed current
S Source return path / body diode cathode Serves as common reference for gate drive and carries reverse recovery current up to 15 A pulsed

Key Features

Feature Design Value
Repetitive avalanche rated Withstands 3.8 A repetitive avalanche current (IAR) without degradation - eliminates need for external clamping in inductive load switching
Dynamic dV/dt rating 4.8 V/ns peak diode recovery dV/dt - prevents spurious turn-on during fast voltage transients across drain-source
Fast switching 7 ns turn-on delay + 12 ns fall time (VDD = 125 V, ID = 4.4 A, RG = 18 Ω) - reduces switching losses in 100–500 kHz converters
Low Qgd/Qg ratio 7.8/14 = 56% - improves Miller immunity and enables stable operation with moderate gate resistance
PCB-mount power capability 2.5 W dissipation on 1" FR-4 - supports compact, heatsink-free designs in space-constrained industrial modules

Applications

DC-DC Converter Primary Switch Brushed DC Motor Driver

Use Scenario: High-efficiency 24–48 V input buck converter delivering 5–12 V at up to 3 A for embedded controllers.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer via PWM at 200–300 kHz.

Use Value: 1.1 Ω RDS(on) limits conduction loss to <1.2 W; 14 nC Qg enables use of low-cost SOT-23 gate drivers.

Use Scenario: H-bridge driver for 24 V brushed motors in automated valves or HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current up to 3.8 A with integrated body diode freewheeling.

Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM decay; 1.8 V VSD minimizes freewheeling loss.

AC-DC Adapter Flyback Switch Industrial Solenoid Driver

Use Scenario: 15 W offline flyback adapter for IoT sensors, using universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: Primary-side switch operating in discontinuous conduction mode (DCM) at ~65 kHz.

Use Value: 130 mJ EAS safely clamps leakage inductance spikes; 250 V VDS provides margin above 375 V reflected voltage.

Use Scenario: 24 V solenoid actuator control in factory automation PLC I/O modules.

IC Role / Device Role / Timing Role: High-side or low-side switch enabling precise on/off timing with fast turn-off (<20 ns fall time).

Use Value: 4.8 V/ns dV/dt rating prevents false triggering during rapid solenoid de-energization; TO-251 mechanical robustness withstands vibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRFR224PbF Same silicon die, DPAK (TO-252) surface-mount package instead of TO-251 - RthJC = 3.0 °C/W identical, but RthJA = 110 °C/W vs. 50 °C/W for IRFU224PBF on PCB Preferred for automated SMT assembly; lower profile but requires thermal pad and reflow profile optimization Select IRFR224PbF only when board space constraints favor SMT and thermal management includes copper pour under DPAK
STP2NK25Z 250 V, 2.5 A, 2.2 Ω RDS(on), 9 nC Qg - higher on-resistance, lower gate charge, same TO-220 footprint (not pin-compatible) Used in cost-sensitive linear regulators and low-frequency switching where conduction loss dominates Choose STP2NK25Z only if gate drive is limited to <5 mA and thermal design accommodates higher RDS(on) loss

Compared with IRFU224PBF, IRFR224PbF offers identical electrical specs but demands different PCB layout and thermal strategy due to DPAK's higher junction-to-ambient resistance, while STP2NK25Z trades higher conduction loss for lower gate drive demand and legacy TO-220 compatibility - neither is pin-compatible, requiring layout revision.

Availability

IRFU224PBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power supplies, and solenoid control systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Vishay-authorized channels.

Supply support for IRFU224PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFU224PBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for industrial-grade switching applications demanding avalanche tolerance, fast dynamics, and consistent parametric stability across temperature.

FAQ

What is the maximum continuous drain current for IRFU224PBF at 100 °C case temperature?

The IRFU224PBF supports 2.4 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-251 package on standard PCBs; operation above this current requires forced-air cooling or heatsinking. The IRFU224PBF datasheet confirms this value under linear derating factor of 0.33 W/°C from 42 W at 25 °C.

Does IRFU224PBF have a built-in body diode, and what are its key parameters?

Yes, the IRFU224PBF integrates a monolithic body diode with 3.8 A continuous forward current (IS), 15 A pulsed rating (ISM), 1.8 V forward voltage (VSD) at 3.8 A and 25 °C, and 200–400 ns reverse recovery time (trr). These values are measured per the device's test conditions in the datasheet and enable reliable freewheeling in inductive loads without external diodes.

Can IRFU224PBF be used in avalanche mode, and what are the limits?

Yes, IRFU224PBF is explicitly rated for repetitive avalanche operation: 3.8 A repetitive avalanche current (IAR) and 4.2 mJ repetitive avalanche energy (EAR). Single-pulse capability reaches 130 mJ. These ratings assume pulse width and duty cycle limits defined in Figure 11 and 12 of the datasheet, with junction temperature kept ≤150 °C. The IRFU224PBF must not exceed these boundaries without derating.

What is the gate threshold voltage range for IRFU224PBF, and how does it affect drive requirements?

The IRFU224PBF has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 μA. This allows reliable turn-on with standard 5 V or 10 V logic-level drivers. However, full enhancement (RDS(on) ≤ 1.1 Ω) requires VGS ≥ 10 V. Driving below 4.5 V risks partial turn-on and excessive conduction loss - the IRFU224PBF is not a logic-level MOSFET optimized for 3.3 V drive.

Is IRFU224PBF RoHS-compliant and halogen-free?

Yes, IRFU224PBF is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and JEDEC JS709 standards. The "PbF" suffix denotes lead-free termination, and material compliance is documented in Vishay's official product change notices and the "Material categorization" section of the datasheet (document 91271, Rev. D).

IRFU224PBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
250 V
Current - Continuous Drain (Id) @ 25°C:
3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.1Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
260 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 42W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-251AA

IRFU224PBF FAQ

1.How can I place an order for IRFU224PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU224PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU224PBF reliable?

The price and inventory of IRFU224PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU224PBF is usually 5 days.

3.What payment methods are accepted for IRFU224PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU224PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU224PBF?

IRFU224PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU224PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU224PBF?

For technical support, including IRFU224PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU224PBF requirements.

6.How does Aetrix verify that IRFU224PBF is sourced from the original manufacturer or authorized distributors?

All IRFU224PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU224PBF meets industry standards.

7.What is the process for return or replacement of IRFU224PBF?

All IRFU224PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU224PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU224PBF part is unused and in its original packaging.

Return procedure for IRFU224PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFU224PBF Tags

  • IRFU224PBF
  • IRFU224PBF PDF
  • IRFU224PBF Datasheet
  • IRFU224PBF Specifications
  • IRFU224PBF Images
  • Vishay Siliconix
  • Vishay Siliconix IRFU224PBF
  • Buy IRFU224PBF
  • IRFU224PBF Price
  • IRFU224PBF Distributor
  • IRFU224PBF Supplier
  • IRFU224PBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER