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Vishay Siliconix IRFU310

Part No.:
IRFU310
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIRFU310.pdf
Description:
MOSFET N-CH 400V 1.7A TO251AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,931

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Product details

Overview

IRFU310 from Vishay Siliconix is a 400 V, 1.7 A N-channel power MOSFET in straight-lead IPAK (TO-251) package, optimized for through-hole mounting in offline switch-mode power supplies, AC-DC adapters, and motor control circuits. It features 3.6 Ω RDS(on) at VGS = 10 V, 12 nC total gate charge, and full repetitive avalanche rating up to 1.7 A.

For engineers reviewing the IRFU310 datasheet, IRFU310 pinout, IRFU310 application, or IRFU310 equivalent, this page delivers verified electrical specs, thermal derating behavior, diode recovery characteristics, and real-world mounting guidance for reliable high-voltage switching design.

Technical Context

The IRFU310 employs third-generation planar vertical DMOS technology with ruggedized die construction, enabling stable operation under unclamped inductive switching stress. Its 86 mJ single-pulse avalanche energy and 2.5 mJ repetitive avalanche energy support robust fault tolerance in flyback and forward converter topologies.

Designed for high-voltage DC-link switching, it delivers fast turn-on delay (7.9 ns) and fall time (11 ns) with low internal source inductance (7.5 nH), minimizing voltage overshoot during hard commutation. The body diode exhibits 240–540 ns reverse recovery time and 0.85–1.6 μC Qrr, suitable for non-synchronous rectification where controlled diode conduction is required.

Key Specifications

ParameterValue and Actual Design Meaning
VDS400 V - Supports primary-side switching in 230 VAC offline applications with ≥2× safety margin
RDS(on) @ VGS = 10 V3.6 Ω - Enables <1.7 A continuous drain current at TC = 25 °C with ≤10 W conduction loss
Qg12 nC - Determines gate drive power requirement; compatible with standard 1 A peak gate drivers
EAS86 mJ - Withstands single-energy avalanche events without failure in inductive load switching
TJ Range−55 to +150 °C - Qualified for industrial ambient environments and thermally constrained PCB layouts
dV/dt Rating4.0 V/ns - Resists false turn-on during high-speed voltage transients in noisy power stages
PD @ TC = 25 °C25 W - Requires heatsinking for sustained >1.1 A operation above 100 °C case temperature

Pinout & Package

IRFU310 uses the IPAK (TO-251) straight-lead through-hole package with exposed drain pad for thermal conduction. Mounting requires 1" square FR-4 PCB area for rated 2.5 W power dissipation at ambient.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control inputAccepts 0–20 V logic-level signal; threshold voltage 2.0–4.0 V ensures reliable turn-on with 5 V microcontroller outputs
D (Drain)High-side power nodeConnected to DC bus or transformer primary; electrically tied to exposed metal tab for heatsink attachment
S (Source)Return path / referenceProvides common return for gate drive and load current; used as ground reference for current sensing

Key Features

FeatureDesign Value
Repetitive avalanche ratedWithstands 1.7 A repetitive avalanche current without degradation-enables reliable operation in clamped inductive loads
Dynamic dV/dt rating4.0 V/ns immunity prevents spurious turn-on during fast voltage transitions in high-frequency SMPS
Fast switching performance7.9 ns turn-on delay + 11 ns fall time reduces switching losses below 200 kHz operation
Low Qgd/Qg ratio6.5/12 = 54% - Improves Miller immunity and enables stable operation with moderate gate resistance
Body diode with defined Qrr0.85–1.6 μC reverse recovery charge supports predictable snubber design in non-synchronous converters

Applications

Offline AC-DC AdaptersIndustrial Motor Drives

Use Scenario: 230 VAC input rectified to ~320 VDC bus driving a flyback converter delivering 5–12 V output.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer via transformer coupling.

Use Value: 400 V VDS rating provides margin over 320 V bus; 3.6 Ω RDS(on) limits conduction loss to <1.0 W at 0.5 A RMS drain current.

Use Scenario: Low-power BLDC or stepper motor driver using discrete half-bridge topology with external gate control.

IC Role / Device Role / Timing Role: Low-side switching element handling phase current return path with integrated body diode freewheeling.

Use Value: 1.7 A continuous rating and 6.0 A pulsed capability support 24 V/1 A motor phases; 240 ns trr enables clean commutation at ≤10 kHz PWM.

LED Driver Power StagesUPS Inverter Stages

Use Scenario: Constant-current buck or buck-boost LED driver operating from 12–48 VDC input powering high-brightness arrays.

IC Role / Device Role / Timing Role: Main switching transistor regulating average LED current via PWM duty cycle control.

Use Value: 12 nC Qg allows efficient gate driving at 100–500 kHz; 25 W PD supports heatsinked operation for >10 W output power.

Use Scenario: Line-interactive UPS using push-pull or half-bridge inverter to generate 120/230 VAC from 12–48 VDC battery bank.

IC Role / Device Role / Timing Role: High-voltage switching device in DC-AC conversion stage handling bidirectional energy flow.

Use Value: Repetitive avalanche rating protects against inductive kickback during battery disconnection; 150 °C max TJ supports sealed enclosure thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFR310Same die, DPAK (TO-252) surface-mount package; identical VDS, RDS(on), Qg, and avalanche ratingsRequires reflow-compatible PCB layout; no through-hole mounting; lower thermal resistance to PCB (RthJA = 50 °C/W vs. 110 °C/W)Select IRFR310 for automated SMT assembly and improved thermal performance on dense boards.
STP3NK60ZFP600 V VDS, 3 A ID, 4.5 Ω RDS(on); SuperMESH™ process yields lower Qg (9 nC) but higher CossBetter voltage margin for 400 V bus designs; higher current capability but larger gate drive demand due to different capacitance profileChoose STP3NK60ZFP when 600 V rating or 3 A continuous current is required; verify gate drive strength for 9 nC Qg.

Compared with IRFU310, IRFR310 offers identical electrical performance in a surface-mount package for higher-density layouts, while STP3NK60ZFP trades higher voltage headroom and current capacity for slightly higher on-resistance and different dynamic capacitance behavior-requiring gate drive redesign.

Availability

IRFU310 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial motor drives, and LED driver power stages requiring stable component supply across extended production lifecycles.

Supply support for IRFU310 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFU310 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for cost-effective, avalanche-tolerant switching in industrial and consumer power conversion systems.

FAQ

What is the maximum continuous drain current for IRFU310 at 100 °C case temperature?

The IRFU310 supports 1.1 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the IPAK package mounted on standard FR-4 PCB. At TC = 25 °C, the rating increases to 1.7 A. Designers must ensure heatsinking or airflow maintains case temperature within this limit to avoid exceeding safe junction temperature (TJ ≤ 150 °C). The linear derating factor is 0.20 W/°C for junction-to-case conduction.

Does IRFU310 have a fully rated avalanche capability, and what does that mean for circuit design?

Yes, IRFU310 is fully repetitive avalanche rated with 2.5 mJ EAR and 1.7 A IAR. This means it can repeatedly absorb inductive energy during switching transitions without damage-critical in flyback, forward, and resonant converters where voltage spikes exceed VDS. Designers may omit external snubbers in many cases, reducing component count and improving efficiency. However, pulse width remains limited by junction temperature rise, as shown in Figure 11 of the datasheet.

What is the gate threshold voltage range for IRFU310, and how does it affect microcontroller compatibility?

The IRFU310 has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C. This ensures reliable turn-on with standard 5 V logic outputs, though full enhancement (low RDS(on)) requires VGS ≥ 10 V. For 3.3 V microcontrollers, gate drive must be boosted or buffered-direct connection risks incomplete turn-on and excessive conduction loss. Always verify VGS = 10 V is applied in final design to achieve the specified 3.6 Ω RDS(on).

How does the body diode performance of IRFU310 impact its use in non-synchronous rectification?

The IRFU310's body diode has a typical reverse recovery time (trr) of 240–540 ns and Qrr of 0.85–1.6 μC, making it suitable for non-synchronous flyback or buck converters operating below 200 kHz. Its 1.6 V forward drop at 1.7 A helps minimize conduction loss during freewheeling, but designers must account for stored charge removal during turn-on to prevent shoot-through in half-bridge configurations. Layout inductance directly impacts observed trr, so compact routing is essential.

Can IRFU310 be used as a direct replacement for IRFR310 in an existing design?

No-IRFU310 and IRFR310 share identical die characteristics but differ in package: IRFU310 uses straight-lead IPAK (TO-251) for through-hole mounting, while IRFR310 uses surface-mount DPAK (TO-252). Substitution requires PCB redesign, including hole placement, pad geometry, and thermal relief. Electrical performance is identical, but thermal resistance to ambient differs significantly (110 °C/W vs. 50 °C/W), affecting power handling in PCB-mounted configurations.

IRFU310 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
400 V
Current - Continuous Drain (Id) @ 25°C:
1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
170 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-251AA

IRFU310 FAQ

1.How can I place an order for IRFU310 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU310 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU310 reliable?

The price and inventory of IRFU310 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU310 is usually 5 days.

3.What payment methods are accepted for IRFU310?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU310 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU310?

IRFU310 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU310 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU310?

For technical support, including IRFU310 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU310 requirements.

6.How does Aetrix verify that IRFU310 is sourced from the original manufacturer or authorized distributors?

All IRFU310 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU310 meets industry standards.

7.What is the process for return or replacement of IRFU310?

All IRFU310 units undergo pre-shipment inspection (PSI). If there is an issue with IRFU310, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU310 part is unused and in its original packaging.

Return procedure for IRFU310:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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