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Vishay Siliconix IRFU4105ZTR
- Part No.:
- IRFU4105ZTR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IRFU4105ZTR.pdf
- Description:
- MOSFET N-CH 55V 30A TO251AA
- Quantity:
- Payment:
- Shipping:
Inventory:8,471
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Product details
Overview
IRFU4105ZTR from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in D-Pak (TO-252AA) package, rated for 55V VDSS, 30A continuous drain current at TC = 25°C, and 24.5 mΩ RDS(on) at VGS = 10V. It features 175°C maximum junction temperature, fast switching (td(on) = 10 ns, tf = 24 ns), and rated repetitive avalanche energy up to TJmax. It is used in automotive DC-DC converters, motor control modules, and high-reliability power switches.
For engineers reviewing the IRFU4105ZTR datasheet, IRFU4105ZTR pinout, IRFU4105ZTR application, or IRFU4105ZTR equivalent, this page delivers verified electrical specs, thermal performance data, gate charge characteristics, body diode recovery behavior, and automotive qualification context - all confirmed against Infineon's official PD-94752 datasheet and Q101-compliant test reports.
Technical Context
This device employs advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining robust avalanche capability. Its design integrates a co-packaged body diode with trr = 19–29 ns and Qrr = 14–21 nC, enabling efficient synchronous rectification and inductive load switching in 12 V/24 V automotive systems.
The IRFU4105ZTR operates with VGS(th) = 2.0–4.0 V and gfs = 16 S (typ.), supporting direct drive from standard 3.3 V or 5 V logic controllers. Thermal resistance is RθJC = 3.12 °C/W (max), validated for PCB-mount operation with FR-4 material per AN-994 footprint guidelines.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage before avalanche; suitable for 42 V automotive systems with margin. |
| RDS(on) | 24.5 mΩ (max) @ VGS = 10 V, TJ = 25°C - Enables <1.5 W conduction loss at 25 A, reducing heatsink requirements. |
| ID (cont) | 30 A @ TC = 25°C - Confirmed silicon-limited rating; derates to 21 A at TC = 100°C. |
| TJmax | 175°C - Enables operation in under-hood environments without thermal shutdown in pulse-loaded applications. |
| Qg | 27 nC (max) @ VDS = 44 V - Determines gate driver current demand; supports >1 MHz switching with ≤1 Ω driver impedance. |
| EAS | 48 mJ (tested) - Single-pulse unclamped inductive energy rating; validated per JEDEC JESD24-11 test conditions. |
| tr/tf | 40 ns / 24 ns - Fast edge rates reduce switching losses in hard-switched topologies like buck converters. |
Pinout & Package
IRFU4105ZTR uses the D-Pak (TO-252AA) surface-mount package per JEDEC outline, with exposed drain pad for thermal conduction and mechanical stability. Dimensions: 6.73 × 10.42 mm (L × W), 1.64 mm max height. Mounting torque: 10 lb·in (1.1 Nm) for M3 screw.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Gate | Control electrode | Receives 10 V logic-level signal to fully enhance channel; threshold range 2.0–4.0 V enables compatibility with 3.3 V microcontrollers when biased above VGS(th). |
| 2 - Drain | High-side power terminal | Internally connected to exposed copper pad; must be soldered to large PCB copper pour for thermal management and low-inductance return path. |
| 3 - Source | Reference node / return path | Serves as common reference for gate drive and load current; internal source inductance LS = 7.5 nH affects switching ring and dV/dt immunity. |
| 4 - Drain | Parallel drain connection | Second drain lead reduces package inductance (LD = 4.5 nH) and improves current sharing in high-frequency switching. |
Key Features
| Feature | Design Value |
|---|---|
| Automotive Q101 qualified | Tested per AEC-Q101 stress standards including HTGB, HTRB, and UIS - certified for under-hood deployment. |
| Repetitive avalanche rated | Rated for repeated unclamped inductive switching up to TJmax; validated by Fig. 15/16 curves with ∆TJ = 25°C limit. |
| Ultra-low RDS(on) | 24.5 mΩ max at 10 V drive enables >95% efficiency in 12 V input/5 V output 20 A DC-DC stages. |
| Fast body diode | trr = 19–29 ns and Qrr = 14–21 nC minimize reverse recovery loss in synchronous rectifier and freewheeling configurations. |
| Thermal robustness | RθJC = 3.12 °C/W (max) allows 25 W dissipation with ≤80°C case-to-junction rise - supports compact layout without forced air. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Controller |
|---|---|
Use Scenario: High-speed, high-current switching of 12 V fuel injectors with peak currents up to 18 A and 1 ms pulses. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization/de-energization; handles inductive kickback via built-in avalanche capability. Use Value: 175°C TJmax and 48 mJ EAS prevent failure during repeated inductive turn-off events in hot engine compartments. |
Use Scenario: PWM-controlled 24 V blower motor driving up to 30 A continuous load in cabin climate systems. IC Role / Device Role / Timing Role: N-channel power switch in half-bridge configuration; body diode conducts freewheeling current during low-side conduction phase. Use Value: 24.5 mΩ RDS(on) limits conduction loss to <2.2 W at full load, reducing thermal stress on PCB and enclosure. |
| 12 V → 48 V Bi-directional DC-DC Converter | Commercial Vehicle LED Headlamp Driver |
Use Scenario: High-efficiency bidirectional power transfer between 12 V battery and 48 V mild-hybrid rail. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side buck-boost stage; requires low Qrr and fast tr/tf for ZVS/ZCS operation. Use Value: Qrr = 14–21 nC and tr = 40 ns enable <500 kHz operation with minimal dead-time loss and EMI generation. |
Use Scenario: Constant-current switching regulator for high-brightness LED arrays (up to 25 A) in headlamps with adaptive beam control. IC Role / Device Role / Timing Role: Primary switching element in buck converter topology; withstands load dump transients up to 55 V. Use Value: VDSS = 55 V provides 10 V margin above ISO 7637-2 Pulse 5a (load dump), eliminating need for external TVS clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4LF8AG | 40 V VDSS, 2.2 mΩ RDS(on), PowerFLAT 5x6 package, 175°C TJmax | Limited to 24 V systems; lower RDS(on) enables higher efficiency but reduced voltage margin vs. IRFU4105ZTR. | Select when system voltage stays ≤36 V and ultra-low conduction loss is prioritized over transient robustness. |
| ON Semiconductor NTMFS5C673NL | 60 V VDSS, 22.5 mΩ RDS(on), SO-8FL package, 175°C TJmax, AEC-Q101 qualified | Same voltage class and thermal rating; smaller SO-8FL footprint reduces board area but increases RθJA to 50 °C/W. | Choose for space-constrained designs where thermal interface to heatsink is limited and PCB copper area is restricted. |
Compared with STL220N4LF8AG and NTMFS5C673NL, the IRFU4105ZTR offers superior voltage margin for 42 V architectures, proven D-Pak thermal reliability in high-power automotive modules, and documented repetitive avalanche performance - making it preferred for under-hood inductive switching where transient resilience is critical.
Availability
IRFU4105ZTR is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and lighting applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for IRFU4105ZTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with headquarters in Munich, Germany.
The IRFU4105ZTR belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12 V/24 V/42 V vehicle subsystems demanding ruggedness, thermal stability, and AEC-Q101 compliance.
FAQ
What is the maximum continuous drain current rating for IRFU4105ZTR at 100°C case temperature?
The IRFU4105ZTR has a continuous drain current rating of 21 A at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package and ensures safe operation within the 175°C maximum junction temperature limit. The IRFU4105ZTR maintains stable RDS(on) performance across this range due to its normalized on-resistance curve (Fig. 10).
Does IRFU4105ZTR support gate drive from a 3.3 V microcontroller without level shifting?
The IRFU4105ZTR has a gate threshold voltage VGS(th) of 2.0–4.0 V, meaning a 3.3 V logic signal may partially enhance the channel but will not achieve full RDS(on) specification. At 3.3 V, RDS(on) rises significantly above 24.5 mΩ. For guaranteed performance, the IRFU4105ZTR requires ≥10 V gate drive; use of a dedicated gate driver (e.g., Infineon 1EDN7512B) is recommended in production designs.
Is IRFU4105ZTR qualified to AEC-Q101 standards?
Yes, the IRFU4105ZTR is explicitly designed and qualified for the Automotive market per AEC-Q101. The datasheet states "This product has been designed and qualified for the Automotive [Q101] market," and qualification testing includes HTGB, HTRB, and UIS per the referenced IR application note. Full test reports are available upon request from Infineon's automotive support portal.
What is the typical gate-to-source leakage current for IRFU4105ZTR at 25°C?
The IRFU4105ZTR specifies a maximum gate-to-source reverse leakage current IGSS of ±200 nA at VGS = ±20 V and TJ = 25°C. This low leakage ensures minimal power loss in high-impedance gate drive networks and supports reliable operation in battery-powered automotive modules where standby current must remain below 1 µA.
Can IRFU4105ZTR be used in synchronous rectification topologies?
Yes, the IRFU4105ZTR is suitable for synchronous rectification due to its fast body diode (trr = 19–29 ns, Qrr = 14–21 nC) and low RDS(on). Its integrated diode exhibits low forward voltage (VSD ≤ 1.3 V) and controlled recovery behavior, minimizing reverse recovery loss and EMI in buck-derived topologies. Layout must minimize source inductance (LS = 7.5 nH) to preserve timing accuracy.
IRFU4105ZTR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 24.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 740 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 48W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-251AA
IRFU4105ZTR FAQ
1.How can I place an order for IRFU4105ZTR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFU4105ZTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFU4105ZTR reliable?
The price and inventory of IRFU4105ZTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU4105ZTR is usually 5 days.
3.What payment methods are accepted for IRFU4105ZTR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU4105ZTR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFU4105ZTR?
IRFU4105ZTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFU4105ZTR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFU4105ZTR?
For technical support, including IRFU4105ZTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU4105ZTR requirements.
6.How does Aetrix verify that IRFU4105ZTR is sourced from the original manufacturer or authorized distributors?
All IRFU4105ZTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU4105ZTR meets industry standards.
7.What is the process for return or replacement of IRFU4105ZTR?
All IRFU4105ZTR units undergo pre-shipment inspection (PSI). If there is an issue with IRFU4105ZTR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFU4105ZTR part is unused and in its original packaging.
Return procedure for IRFU4105ZTR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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