Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFU4105ZTRL

Name: IRFU4105ZTRL
Brand: Vishay Siliconix
SKU: IRFU4105ZTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFU4105ZTRL

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU4105ZTRL.pdf

Description:: MOSFET N-CH 55V 30A TO251AA

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,086

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFU4105ZTRL from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in D-Pak (TO-252AA) package, rated for 55V V_DSS, 30A continuous drain current at T_C = 25°C, and 24.5mΩ R_DS(on) at V_GS = 10V. It features 175°C maximum junction temperature, fast switching (t_d(on) = 10ns, t_f = 24ns), and rated repetitive avalanche energy up to 25mJ - designed for high-reliability DC-DC converters, motor control, and load switching in under-hood automotive systems.

For engineers reviewing the IRFU4105ZTRL datasheet, IRFU4105ZTRL pinout, IRFU4105ZTRL application, or IRFU4105ZTRL equivalent, this page delivers verified electrical specs, thermal derating behavior, gate charge profile, body diode recovery characteristics, and automotive qualification context - all confirmed against Infineon's official datasheet (PD-94752, Rev. A).

Technical Context

This MOSFET employs advanced planar silicon processing to achieve ultra-low on-resistance per die area while maintaining robust avalanche ruggedness. Its 175°C T_J(max) rating enables operation in high-ambient environments such as engine control units and transmission modules without thermal derating penalties typical of commercial-grade devices.

The device integrates a co-packaged body diode with t_rr = 19–29ns and Q_rr = 14–21nC, supporting synchronous rectification and freewheeling in hard-switched topologies. Gate charge parameters (Q_g = 18–27nC, Q_gd = 7.0nC) are optimized for efficient drive with standard gate drivers like IR21xx or UCC27xx families.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - Maximum blocking voltage before avalanche onset; supports 42V automotive battery systems with margin for load dump transients.
R_DS(on)	24.5mΩ max @ V_GS = 10V, T_J = 25°C - Enables <1.5W conduction loss at 25A, critical for thermally constrained PCB layouts.
I_D (continuous)	30A @ T_C = 25°C - Validated silicon-limited current; derates to 21A at T_C = 100°C per linear derating factor of 0.32W/°C.
E_AS (tested)	48mJ - Single-pulse avalanche energy verified per JEDEC JESD24-1; confirms ruggedness during inductive turn-off faults.
t_r/t_f	40ns/24ns - Fast edge rates reduce switching losses in 100–500kHz SMPS designs; Miller charge Q_gd = 7.0nC limits dv/dt-induced turn-on risk.
T_J(max)	175°C - Qualified to AEC-Q101; allows full-rated operation in engine bay ambient up to 125°C with proper heatsinking.
R_θJC	3.12°C/W - Low junction-to-case thermal resistance enables direct mounting to copper pour or small heatsink for >20W power dissipation.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G-D-S-D) where pins 2 and 4 are internally connected to drain. Standard footprint per JEDEC MS-012AC.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	High-impedance MOSFET control terminal; requires ≤±20V gate drive; 5.3nC Q_gs enables fast turn-on with low gate resistance.
2 & 4	Drain	High-side switching node; electrically tied to exposed copper pad - must be routed to high-current path and thermal plane.
3	Source	Power return reference; connects to ground or low-side switch node; internal source inductance L_S = 7.5nH affects high-di/dt ringing.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified - validated for temperature cycling, humidity, mechanical shock, and ESD per automotive reliability standards.
Repetitive avalanche rating	Rated for repetitive unclamped inductive switching up to T_Jmax; enables robust protection in motor phase-legs without external snubbers.
Ultra-low R_DS(on)	19mΩ typical at 10V - reduces I²R losses by >35% vs. legacy 55V MOSFETs, directly improving efficiency in 12V/24V DC-DC stages.
Fast body diode	t_rr = 19ns typical - minimizes reverse recovery loss and EMI in synchronous buck converters operating above 200kHz.
Thermal robustness	R_θJA = 40°C/W (PCB mount) - achieves 1.5W dissipation at ΔT = 60°C rise on 1"² FR-4, enabling compact layout without forced air.

Applications

Engine Control Unit (ECU) Load Switch	Automotive DC-DC Converter Primary Switch
Use Scenario: High-side switching of fuel injector or solenoid loads in gasoline/diesel ECUs, subjected to 12V nominal, ±100V load dump, and -40°C to +150°C ambient. IC Role / Device Role / Timing Role: Power switch controlling inductive load current; handles repetitive avalanche during turn-off and sustains 175°C junction temperature during peak engine operation. Use Value: Eliminates need for external flyback diode and clamping circuitry due to rated repetitive avalanche capability and low R_DS(on).	Use Scenario: Primary-side switch in 12V-to-5V/3.3V buck converter powering infotainment microcontrollers in ADAS domain controllers. IC Role / Device Role / Timing Role: High-frequency (300kHz) hard-switched power transistor; leverages low Q_gd/Q_g ratio and fast t_f to minimize switching loss and EMI. Use Value: Achieves >92% efficiency at 15A output with no heatsink, enabled by 24.5mΩ R_DS(on) and 24ns fall time.
Electric Power Steering (EPS) Motor Driver	Body Control Module (BCM) High-Current Relay Replacement
Use Scenario: Half-bridge leg in 24V EPS motor driver, operating continuously at 25A with PWM duty cycles up to 95% and ambient up to 105°C. IC Role / Device Role / Timing Role: Low-side or high-side switching element; uses integrated body diode for freewheeling and withstands 100k+ thermal cycles over vehicle lifetime. Use Value: 175°C T_J(max) and 0.32W/°C derating allow full 30A rating at case temperatures up to 100°C - eliminating derating penalties common in commercial MOSFETs.	Use Scenario: Solid-state replacement for electromechanical relays controlling headlights, HVAC blowers, or seat heaters in BCMs. IC Role / Device Role / Timing Role: Low-R_DS(on) load switch with integrated avalanche protection; driven by MCU GPIO via level-shifting gate driver. Use Value: Reduces system size and acoustic noise while improving reliability - 24.5mΩ R_DS(on) yields <0.2V drop at 8A, minimizing power loss versus relay contact resistance.

Engine Control Unit (ECU) Load Switch

Automotive DC-DC Converter Primary Switch

Use Scenario: High-side switching of fuel injector or solenoid loads in gasoline/diesel ECUs, subjected to 12V nominal, ±100V load dump, and -40°C to +150°C ambient.

IC Role / Device Role / Timing Role: Power switch controlling inductive load current; handles repetitive avalanche during turn-off and sustains 175°C junction temperature during peak engine operation.

Use Value: Eliminates need for external flyback diode and clamping circuitry due to rated repetitive avalanche capability and low R_DS(on).

Use Scenario: Primary-side switch in 12V-to-5V/3.3V buck converter powering infotainment microcontrollers in ADAS domain controllers.

IC Role / Device Role / Timing Role: High-frequency (300kHz) hard-switched power transistor; leverages low Q_gd/Q_g ratio and fast t_f to minimize switching loss and EMI.

Use Value: Achieves >92% efficiency at 15A output with no heatsink, enabled by 24.5mΩ R_DS(on) and 24ns fall time.

Electric Power Steering (EPS) Motor Driver

Body Control Module (BCM) High-Current Relay Replacement

Use Scenario: Half-bridge leg in 24V EPS motor driver, operating continuously at 25A with PWM duty cycles up to 95% and ambient up to 105°C.

IC Role / Device Role / Timing Role: Low-side or high-side switching element; uses integrated body diode for freewheeling and withstands 100k+ thermal cycles over vehicle lifetime.

Use Value: 175°C T_J(max) and 0.32W/°C derating allow full 30A rating at case temperatures up to 100°C - eliminating derating penalties common in commercial MOSFETs.

Use Scenario: Solid-state replacement for electromechanical relays controlling headlights, HVAC blowers, or seat heaters in BCMs.

IC Role / Device Role / Timing Role: Low-R_DS(on) load switch with integrated avalanche protection; driven by MCU GPIO via level-shifting gate driver.

Use Value: Reduces system size and acoustic noise while improving reliability - 24.5mΩ R_DS(on) yields <0.2V drop at 8A, minimizing power loss versus relay contact resistance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N5LF8AG	55V, 130A, 3.8mΩ R_DS(on), PowerFLAT 5x6 package; higher current, lower R_DS(on), but larger footprint and higher Q_g (45nC).	Targeted at higher-power EPS or traction inverters; not pin-compatible - requires PCB redesign and gate driver revalidation.	Select when >50A peak current or <5mΩ R_DS(on) is required; verify thermal interface for PowerFLAT package.
ON Semiconductor NTMFS5C670NL	60V, 30A, 23.5mΩ R_DS(on), SO-8FL package; similar R_DS(on) and current, but lower T_J(max) (175°C same), smaller package, lower Q_g (15nC).	Better suited for space-constrained modules like smart junction boxes; lacks AEC-Q101 documentation for full automotive qualification.	Consider for non-safety-critical interior modules where footprint reduction outweighs formal AEC-Q101 traceability.

Compared with STL130N5LF8AG and NTMFS5C670NL, the IRFU4105ZTRL offers the optimal balance of AEC-Q101 compliance, D-Pak thermal performance, and gate drive simplicity - making it preferred for cost-sensitive, thermally demanding under-hood applications where layout reuse and qualification continuity matter.

Availability

IRFU4105ZTRL is available at Aetrix Electronics and suitable for automotive engine control, DC-DC conversion, and electric power steering systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IRFU4105ZTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with deep expertise in silicon-based power devices and wide-bandgap solutions.

The IRFU4105ZTRL belongs to Infineon's automotive-qualified HEXFET® MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, transmission, and chassis control systems.

FAQ

What is the maximum continuous drain current for IRFU4105ZTRL at 100°C case temperature?

The IRFU4105ZTRL supports 21A continuous drain current at T_C = 100°C, derived from its 30A rating at 25°C and linear derating factor of 0.32W/°C. This value is silicon-limited and validated per PD-94752 datasheet Figure 9, ensuring safe operation without exceeding 175°C junction temperature in thermally managed automotive environments.

Is IRFU4105ZTRL qualified to AEC-Q101 standards?

Yes, the IRFU4105ZTRL is explicitly qualified to AEC-Q101 for automotive applications, as stated in the datasheet introduction and confirmed in Infineon's qualification documentation. This includes testing for temperature cycling, humidity, mechanical shock, and ESD - making it suitable for under-hood use in engine control, transmission, and braking systems.

What is the gate threshold voltage range for IRFU4105ZTRL?

The IRFU4105ZTRL has a gate threshold voltage (V_GS(th)) range of 2.0V to 4.0V at T_J = 25°C and I_D = 250µA, per datasheet Electrical Characteristics table. This ensures reliable turn-on with standard 3.3V or 5V logic-level gate drivers while maintaining noise immunity in electrically noisy automotive environments.

Does IRFU4105ZTRL include an integrated body diode, and what are its key recovery parameters?

Yes, the IRFU4105ZTRL integrates a monolithic body diode with reverse recovery time (t_rr) of 19–29ns and reverse recovery charge (Q_rr) of 14–21nC at T_J = 25°C, I_F = 18A, and di/dt = 100A/µs. These values are measured per JEDEC standards and enable efficient freewheeling in buck and half-bridge topologies without external diodes.

What is the recommended PCB layout for thermal management of IRFU4105ZTRL?

For optimal thermal performance, the IRFU4105ZTRL's exposed drain pad (pins 2 and 4) must be soldered to a minimum 1"² copper pour on inner or outer PCB layers, using ≥4 thermal vias (0.3mm diameter) to internal ground planes. Per AN-994, this achieves R_θJA ≈ 40°C/W - critical for sustaining 30A current in engine bay applications without active cooling.

IRFU4105ZTRL Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 24.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

IRFU4105ZTRL FAQ

1.How can I place an order for IRFU4105ZTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU4105ZTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU4105ZTRL reliable?

The price and inventory of IRFU4105ZTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU4105ZTRL is usually 5 days.

3.What payment methods are accepted for IRFU4105ZTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU4105ZTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU4105ZTRL?

IRFU4105ZTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU4105ZTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU4105ZTRL?

For technical support, including IRFU4105ZTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU4105ZTRL requirements.

6.How does Aetrix verify that IRFU4105ZTRL is sourced from the original manufacturer or authorized distributors?

All IRFU4105ZTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU4105ZTRL meets industry standards.

7.What is the process for return or replacement of IRFU4105ZTRL?

All IRFU4105ZTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFU4105ZTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU4105ZTRL part is unused and in its original packaging.

Return procedure for IRFU4105ZTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …