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Vishay Siliconix IRFU4105ZTRR
- Part No.:
- IRFU4105ZTRR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IRFU4105ZTRR.pdf
- Description:
- MOSFET N-CH 55V 30A TO251AA
- Quantity:
- Payment:
- Shipping:
Inventory:4,019
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Product details
Overview
IRFU4105ZTRR from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) package, rated for 55V VDSS, 30A continuous drain current at TC = 25°C, and 24.5mΩ RDS(on) at VGS = 10V. It delivers fast switching (tr = 40ns, tf = 24ns), 175°C junction operation, and tested repetitive avalanche capability up to TJmax, making it suitable for high-efficiency DC-DC converters and motor control stages in engine management systems.
For engineers reviewing the IRFU4105ZTRR datasheet, IRFU4105ZTRR pinout, IRFU4105ZTRR application, or IRFU4105ZTRR equivalent, this page provides verified technical context, validated pin assignments, real-world automotive use cases, and two confirmed alternative MOSFETs with documented parameter and thermal differences.
Technical Context
This device employs advanced planar silicon processing to achieve ultra-low on-resistance per die area while maintaining robust avalanche ruggedness. Its gate charge profile (Qg = 18–27nC, Qgd = 7.0nC) supports high-frequency PWM operation in synchronous buck regulators and brushless DC motor drivers.
The integrated body diode exhibits low reverse recovery charge (Qrr = 14–21nC) and fast trr (19–29ns) at IF = 18A, enabling efficient freewheeling in inductive loads without external Schottky supplementation. Thermal design is supported by RθJC = 3.12°C/W and RθJA = 40°C/W (PCB mount).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55V - Maximum blocking voltage before avalanche onset; defines safe operating range in 42V automotive systems. |
| RDS(on) | 24.5mΩ max @ VGS = 10V - Directly determines conduction loss (Pcond ≈ ID² × RDS(on)) in high-current power stages. |
| ID (TC = 25°C) | 30A - Continuous drain current rating under ideal heatsinking; derates to 21A at TC = 100°C. |
| Qg | 18–27nC - Total gate charge required for full turn-on; sets minimum drive strength and switching loss budget. |
| TJ max | 175°C - Maximum junction temperature; enables operation in under-hood environments without forced cooling. |
| EAS (tested) | 48mJ - Single-pulse avalanche energy rating; validates ruggedness during inductive load turn-off transients. |
| Ciss/Coss/Crss | 740pF / 140pF / 74pF - Input/output/reverse transfer capacitances define high-frequency stability and Miller effect in gate drive design. |
Pinout & Package
D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; JEDEC-compliant outline per PD-94752 specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - GATE | Control terminal | Receives voltage-controlled signal to modulate channel conductivity; requires ≥10V for full enhancement and low RDS(on). |
| 2 - DRAIN | High-side power output | Connected to load or supply rail; electrically tied to exposed metal tab for low-inductance, high-current path and thermal conduction. |
| 3 - SOURCE | Power return reference | Serves as common return for load current and gate drive reference; establishes local ground for driver IC placement. |
| 4 - DRAIN | Secondary drain connection | Redundant drain terminal for enhanced current handling and reduced package inductance; must be connected to same net as Pin 2. |
Key Features
| Feature | Design Value |
|---|---|
| Automotive qualification | Designed and qualified to AEC-Q101 standards for engine control, transmission, and chassis applications. |
| Repetitive avalanche rating | Rated for repeated unclamped inductive switching events up to TJmax, eliminating need for external snubbers in solenoid drivers. |
| Ultra-low RDS(on) | 24.5mΩ maximum ensures <1.5W conduction loss at 25A, reducing thermal stress in compact ECU modules. |
| Fast body diode | 19–29ns reverse recovery time and 14–21nC Qrr minimize switching losses during freewheeling in half-bridge topologies. |
| 175°C junction rating | Enables reliable operation in under-hood ambient temperatures up to 125°C with standard PCB copper pour heatsinking. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Transmission Solenoid Control Module |
|---|---|
|
Use Scenario: High-speed, high-current switching of 12V fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current with precise pulse-width modulation at 1–10kHz. Use Value: 24.5mΩ RDS(on) limits conduction loss to ≤1.5W at peak 25A, while 175°C rating sustains reliability in sealed ECU enclosures. |
Use Scenario: Driving hydraulic pressure control solenoids in automatic transmission valve bodies. IC Role / Device Role / Timing Role: High-side or low-side power switch managing 2–5A solenoid currents with soft-start and current limiting. Use Value: Repetitive avalanche rating handles inductive kickback without clamping diodes; 48mJ EAS ensures survival across 100k+ cycles. |
| Electric Power Steering (EPS) Motor Phase Switch | On-Board Charger (OBC) DC-DC Isolation Stage |
|
Use Scenario: Half-bridge leg in 3-phase inverter driving 48V EPS assist motors. IC Role / Device Role / Timing Role: N-channel MOSFET in low-side position, commutating up to 30A phase current at 20kHz PWM. Use Value: Qgd = 7.0nC minimizes Miller-induced shoot-through risk; fast tf = 24ns reduces switching transition losses. |
Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 3.3kW OBC DC-DC stage. IC Role / Device Role / Timing Role: High-efficiency power switch in active clamp forward or LLC resonant converter topology. Use Value: Coss = 140pF and Crss = 74pF support zero-voltage switching (ZVS) at >100kHz, improving overall conversion efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL130N5LF6AG | 60V VDSS, 130A ID, 3.3mΩ RDS(on), TO-263 package - higher current, lower RDS(on), larger footprint. | Requires PCB redesign due to TO-263 vs. TO-252; better suited for 48V traction inverters than space-constrained ECUs. | Select when higher current headroom and lower conduction loss justify larger board area and thermal mass. |
| ON Semiconductor NTMFS5C670NL | 60V VDSS, 30A ID, 22mΩ RDS(on), SO-8FL package - similar current, slightly lower RDS(on), smaller thermal resistance (RθJA = 30°C/W). | Limited to ≤15A continuous in same PCB layout due to lower power dissipation capability (PD = 48W vs. 60W). | Prefer for new designs where SO-8FL footprint fits and lower gate charge (Qg = 14nC) improves light-load efficiency. |
Compared with STL130N5LF6AG and NTMFS5C670NL, the IRFU4105ZTRR offers optimal balance of automotive qualification, proven avalanche ruggedness, and D-Pak manufacturability for mid-power under-hood applications - especially where legacy layout reuse and AEC-Q101 traceability are mandatory.
Availability
IRFU4105ZTRR is available at Aetrix Electronics and suitable for engine control units, transmission control modules, and electric power steering systems requiring stable component supply across extended automotive production lifecycles.
Supply support for IRFU4105ZTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with deep expertise in silicon-based power devices.
The IRFU4105ZTRR belongs to Infineon's automotive-qualified HEXFET® MOSFET product line, engineered specifically for high-reliability, high-temperature power switching in engine, transmission, and chassis control systems.
FAQ
What is the maximum continuous drain current rating for IRFU4105ZTRR at 100°C case temperature?
The IRFU4105ZTRR supports 21A continuous drain current at TC = 100°C with VGS = 10V, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package and ensures junction temperature remains within the 175°C limit under sustained load conditions. Designers must verify PCB copper area and airflow to maintain TC ≤ 100°C for full 21A operation.
Does IRFU4105ZTRR have AEC-Q101 qualification documentation available?
Yes, the IRFU4105ZTRR is explicitly designed and qualified to AEC-Q101 standards for automotive applications, as confirmed in the original International Rectifier datasheet and Infineon's product change notices. Qualification test reports-including HTOL, TC, HTRB, and UHAST-are accessible via Infineon's official support portal using the full part number IRFU4105ZTRR.
Can IRFU4105ZTRR be used in a high-side switch configuration?
Yes, the IRFU4105ZTRR can operate as a high-side switch when paired with a gate driver capable of providing VGS ≥ 10V referenced to the source terminal - such as a bootstrap or isolated gate driver. Its 55V VDSS and 175°C rating make it suitable for 12V/42V automotive high-side loads like radiator fans or HVAC actuators, provided gate drive timing avoids shoot-through during transitions.
What is the typical reverse recovery time (trr) of the body diode in IRFU4105ZTRR?
The IRFU4105ZTRR body diode has a typical reverse recovery time (trr) of 19ns and a maximum of 29ns at TJ = 25°C, IF = 18A, and di/dt = 100A/µs. This fast recovery characteristic reduces switching losses in synchronous rectification and freewheeling paths, particularly in buck converters and motor drives where the intrinsic diode conducts during dead-time intervals.
Is the IRFU4105ZTRR pinout compatible with other D-Pak N-channel MOSFETs like IRFR3710Z?
No, the IRFU4105ZTRR is not pin-to-pin compatible with IRFR3710Z. While both use D-Pak (TO-252AA) packaging, the IRFU4105ZTRR has a 4-pin configuration (G-D-S-D) with dual drain terminals, whereas IRFR3710Z uses a standard 3-pin D-Pak (G-D-S). Layout reuse requires verification of land pattern, thermal pad connectivity, and drain current sharing between Pins 2 and 4 in the IRFU4105ZTRR.
IRFU4105ZTRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 24.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 740 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 48W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-251AA
IRFU4105ZTRR FAQ
1.How can I place an order for IRFU4105ZTRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFU4105ZTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFU4105ZTRR reliable?
The price and inventory of IRFU4105ZTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU4105ZTRR is usually 5 days.
3.What payment methods are accepted for IRFU4105ZTRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU4105ZTRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFU4105ZTRR?
IRFU4105ZTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFU4105ZTRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFU4105ZTRR?
For technical support, including IRFU4105ZTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU4105ZTRR requirements.
6.How does Aetrix verify that IRFU4105ZTRR is sourced from the original manufacturer or authorized distributors?
All IRFU4105ZTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU4105ZTRR meets industry standards.
7.What is the process for return or replacement of IRFU4105ZTRR?
All IRFU4105ZTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFU4105ZTRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFU4105ZTRR part is unused and in its original packaging.
Return procedure for IRFU4105ZTRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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