My Inquiry
My Account
Vishay Siliconix IRFU420APBF
- Part No.:
- IRFU420APBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IRFU420APBF.pdf
- Description:
- MOSFET N-CH 500V 3.3A TO251AA
- Quantity:
- Payment:
- Shipping:
Inventory:8,405
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFU420APBF from Vishay Siliconix is a 500 V, 3.3 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 3.0 Ω RDS(on) at VGS = 10 V, 17 nC total gate charge, and 140 mJ single-pulse avalanche energy. It serves as a high-voltage switching element in offline SMPS, UPS inverters, and industrial DC-DC converters where ruggedness and controlled dV/dt are critical.
For engineers reviewing the IRFU420APBF datasheet, IRFU420APBF pinout, IRFU420APBF application, or IRFU420APBF equivalent, key selection criteria include its 500 V VDS, 3.0 Ω on-resistance at 10 V drive, 140 mJ unclamped avalanche capability, body diode reverse recovery time of 330–500 ns, and TO-252 thermal performance with RthJC = 1.5 °C/W.
Technical Context
This device uses planar vertical DMOS technology optimized for high-voltage switching with low gate charge (Qg = 17 nC) and enhanced dynamic dV/dt ruggedness. Its fully characterized Ciss/Coss/Crss (340 pF / 53 pF / 2.7 pF at VDS = 25 V) enables predictable snubber design and EMI control in hard-switched topologies.
The integrated body diode supports freewheeling in flyback and forward converters, with specified Qrr = 760–1140 μC and trr = 330–500 ns at IF = 2.5 A, dI/dt = 100 A/μs. Avalanche-rated operation allows reliable energy handling during inductive turn-off transients without external clamping.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Withstands full mains rectified voltage in 230 VAC offline applications without derating. |
| RDS(on) @ VGS = 10 V | 3.0 Ω - Enables <3.3 A continuous conduction at TC = 25 °C with ≤10 W conduction loss. |
| Qg max | 17 nC - Reduces gate driver power requirement and simplifies 5–15 V logic-level drive implementation. |
| EAS | 140 mJ - Supports unclamped inductive switching up to 2.5 A with L = 45 mH and no external snubber. |
| trr & Qrr | 330–500 ns / 760–1140 μC - Defines body diode recovery behavior in discontinuous conduction mode (DCM) flyback designs. |
| RthJC | 1.5 °C/W - Allows 83 W power dissipation with ≤125 °C junction rise above 25 °C case temperature. |
| ID @ TC = 100 °C | 2.1 A - Specifies usable current in thermally constrained PCB layouts with heatsink interface. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Drain tab is electrically connected to pin 2 and thermally coupled to PCB copper area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Pin 1) | Gate terminal | Controls channel conduction; requires ≤±30 V bias; low 4.3 nC Qgs enables fast turn-on with minimal drive effort. |
| D (Pin 2 / Tab) | Drain terminal | High-side switching node; electrically and thermally tied to exposed copper pad; must be isolated from other nets except heat sink. |
| S (Pin 3) | Source terminal | Reference node for gate drive and current sensing; connects to power ground or low-side switch source in half-bridge configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg (17 nC) | Reduces gate drive losses and enables use with low-power microcontroller GPIO or simple bipolar drivers. |
| Specified Coss eff. (28 pF) | Enables accurate soft-switching timing prediction in resonant LLC or ZVS circuits operating up to 400 V. |
| Avalanche-rated (EAS = 140 mJ) | Eliminates need for external RCD clamp in cost-sensitive flyback or forward converter primary switches. |
| Body diode Qrr characterization | Supports reliable synchronous rectification design in secondary side or bidirectional DC-DC topologies. |
| JEDEC TO-252 footprint | Ensures compatibility with standard SMT assembly processes and widely available thermal pad layout guidelines. |
Applications
| Offline AC-DC Power Supply | Uninterruptible Power Supply (UPS) |
|---|---|
Use Scenario: Primary-side switch in 50–150 W universal-input flyback converter. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from bulk capacitor to transformer primary. Use Value: 500 V rating accommodates 375 V DC bus with margin; 140 mJ EAS handles leakage inductance spikes without snubber. |
Use Scenario: Inverter bridge switch in 1 kVA line-interactive UPS output stage. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge driving transformer-coupled H-bridge output. Use Value: 3.3 A continuous current supports 230 VAC output at 4.3 A RMS; body diode trr < 500 ns minimizes cross-conduction loss during dead-time. |
| Industrial DC-DC Converter | High-Voltage Battery Charger |
Use Scenario: Primary switch in 48 V input, 380 V output boost converter for EV auxiliary systems. IC Role / Device Role / Timing Role: Main power transistor regulating high-step-up conversion with fixed-frequency PWM. Use Value: 3.0 Ω RDS(on) limits conduction loss to <1.5 W at 2 A; Qg = 17 nC ensures clean 100 kHz switching with 10 Ω gate resistor. |
Use Scenario: Isolation-stage switch in multi-kW telecom rectifier charging 400 V battery banks. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology managing 500 V bus transitions. Use Value: Specified dV/dt ruggedness (3.4 V/ns) prevents spurious turn-on during fast bus commutation; RthJC = 1.5 °C/W enables direct heatsink mounting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | 500 V, 4.5 A, RDS(on) = 1.4 Ω @ 10 V, Qg = 22 nC, TO-220FP package | Higher current rating but larger through-hole package; higher conduction loss at low current, higher gate drive demand | Prefer when board space allows TO-220 and >3.3 A peak current is required; not drop-in due to footprint and thermal interface differences |
| IXTP50N10P | 100 V, 50 A, RDS(on) = 0.022 Ω, TO-220 package | Lower voltage rating (100 V); unsuitable for 400+ V bus applications; vastly lower RDS(on) but incompatible voltage class | Only viable in low-voltage (<150 V) high-current DC-DC; not a functional substitute for IRFU420APBF's 500 V capability |
Compared with STP5NK50ZFP and IXTP50N10P, the IRFU420APBF offers optimal balance of 500 V rating, DPAK thermal performance, and 17 nC gate charge for compact, medium-power offline converters-neither alternative matches its combination of voltage, package, and drive efficiency.
Availability
IRFU420APBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRFU420APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific characterization.
The IRFU420APBF belongs to Vishay's high-voltage power MOSFET product line designed for robust operation in harsh switching environments including industrial power conversion, UPS systems, and offline SMPS where avalanche capability and dV/dt immunity are essential.
FAQ
What is the maximum continuous drain current for IRFU420APBF at 100 °C case temperature?
The IRFU420APBF supports 2.1 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 3.3 A rating at 25 °C, based on a linear derating factor of 0.67 W/°C and RthJC = 1.5 °C/W. Designers must ensure PCB copper area and heatsinking maintain case temperature ≤100 °C under full load to sustain this current in IRFU420APBF applications.
Does IRFU420APBF have avalanche capability, and how is it rated?
Yes, the IRFU420APBF is fully rated for repetitive and single-pulse avalanche operation. It delivers 140 mJ single-pulse avalanche energy (EAS) under test conditions of L = 45 mH, IAS = 2.5 A, and Rg = 25 Ω, and supports 2.5 A repetitive avalanche current (IAR) with 5.0 mJ per pulse. These values are measured and guaranteed per Vishay's characterization methodology, enabling reliable unclamped inductive switching in flyback and forward converters without external protection.
What is the gate threshold voltage range for IRFU420APBF, and how does it affect drive requirements?
The IRFU420APBF has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.5 V at ID = 250 μA, confirming it is a standard-threshold MOSFET requiring ≥10 V for full enhancement. This means logic-level drivers (e.g., 3.3 V or 5 V) cannot fully turn on the device; a dedicated 10–15 V gate driver is necessary to achieve the specified 3.0 Ω RDS(on). Operating below 10 V results in significantly higher on-resistance and conduction loss in IRFU420APBF circuits.
How does the body diode performance of IRFU420APBF impact its use in flyback converters?
The IRFU420APBF body diode exhibits trr = 330–500 ns and Qrr = 760–1140 μC at IF = 2.5 A and dI/dt = 100 A/μs, directly influencing switching loss and EMI in discontinuous conduction mode (DCM) flyback topologies. Fast recovery reduces voltage overshoot during diode commutation, while low Qrr minimizes tail current conduction loss-critical for efficiency in high-frequency (>100 kHz) IRFU420APBF-based flyback designs.
Is IRFU420APBF RoHS-compliant and halogen-free?
Yes, the IRFU420APBF is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and Vishay's material compliance standard outlined in document 99912. The "PbF" suffix denotes lead-free termination, and the device carries Vishay's green material designation. Full compliance documentation, including test reports and substance declarations, is available via Vishay's website using document number 91274.
IRFU420APBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 340 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-251AA
IRFU420APBF FAQ
1.How can I place an order for IRFU420APBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFU420APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFU420APBF reliable?
The price and inventory of IRFU420APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU420APBF is usually 5 days.
3.What payment methods are accepted for IRFU420APBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU420APBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFU420APBF?
IRFU420APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFU420APBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFU420APBF?
For technical support, including IRFU420APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU420APBF requirements.
6.How does Aetrix verify that IRFU420APBF is sourced from the original manufacturer or authorized distributors?
All IRFU420APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU420APBF meets industry standards.
7.What is the process for return or replacement of IRFU420APBF?
All IRFU420APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU420APBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFU420APBF part is unused and in its original packaging.
Return procedure for IRFU420APBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFU420APBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
