Vishay Siliconix IRFU430APBF
- Part No.:
- IRFU430APBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IRFU430APBF.pdf
- Description:
- MOSFET N-CH 500V 5A TO251AA
- Quantity:
- Payment:

- Shipping:

Inventory:391
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFU430APBF from Vishay Siliconix is a 500 V, 5.0 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 1.7 Ω RDS(on) at VGS = 10 V, 24 nC total gate charge, and 130 mJ single-pulse avalanche energy. It serves as a high-voltage switching element in offline SMPS primary-side circuits, UPS inverters, and industrial DC-DC converters.
For engineers reviewing the IRFU430APBF datasheet, IRFU430APBF pinout, IRFU430APBF application, or IRFU430APBF equivalent, key selection criteria include its 500 V VDS rating, 1.7 Ω on-resistance at 10 V drive, 24 nC Qg, body diode recovery time of 410–620 ns, and DPAK thermal performance with RthJC = 1.1 °C/W.
Technical Context
This MOSFET employs planar V-groove silicon technology optimized for high-voltage ruggedness and controlled dV/dt immunity. Its fully characterized Ciss (490 pF), Coss (75 pF), and Crss (4.5 pF) enable predictable snubber design in hard-switched topologies.
The device supports unclamped inductive switching with validated 130 mJ EAS at IAS = 5.0 A and exhibits stable gate threshold voltage (2.0–4.5 V) across –55 to +150 °C, ensuring reliable turn-on in wide-temperature industrial environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Withstands full rectified 340 VAC input with margin for surge and ringing in offline SMPS. |
| RDS(on) | 1.7 Ω @ VGS = 10 V - Delivers ≤8.5 W conduction loss at 5 A DC, enabling thermally constrained PCB layouts. |
| Qg | 24 nC - Enables direct drive from standard 1 A gate drivers without external buffering in 100–500 kHz designs. |
| EAS | 130 mJ - Supports robust operation under inductive fault conditions without external clamping in UPS and motor control. |
| trr | 410–620 ns - Limits reverse recovery losses and EMI generation during synchronous rectification or freewheeling. |
| RthJC | 1.1 °C/W - Allows ≥100 W power dissipation with modest heatsinking, critical for compact high-power density modules. |
Pinout & Package
DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; surface-mount footprint compatible with IPC-7351B standard; recommended copper pad area ≥10.67 mm × 5.69 mm per Vishay AN826.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; low 6.5 nC Qgs enables fast, low-loss turn-on with minimal Miller effect. |
| D (Drain) | High-voltage power terminal | Connected to PCB thermal pad; carries full load current and withstands 500 V transient spikes in flyback/LLC primaries. |
| S (Source) | Reference and return path | Provides Kelvin sense point for current monitoring; ties to power ground plane with low-inductance layout to suppress dV/dt noise. |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg/Qgd ratio | 24 nC / 13 nC = 1.85 - Reduces Miller-induced shoot-through risk and improves controllability in half-bridge configurations. |
| Fully characterized Coss eff. | 51 pF - Enables accurate calculation of turn-off energy loss (Eoff ≈ ½ × Coss eff × VDS²) for efficiency optimization. |
| Avalanche-rated | 130 mJ EAS - Eliminates need for external RCD clamp in cost-sensitive flyback converters operating up to 65 kHz. |
| Body diode Qrr | 1.4–2.1 μC - Predictable reverse recovery charge allows precise snubber sizing and minimizes cross-conduction loss in synchronous rectifiers. |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and Vishay's "Green" material standard (doc# 99912). |
Applications
| Industrial UPS Inverter Stage | Offline Flyback SMPS Primary Switch |
|---|---|
|
Use Scenario: High-efficiency 1 kVA uninterruptible power supply converting 48 VDC battery to 230 VAC output via full-bridge inverter. IC Role / Device Role / Timing Role: High-side switching element in H-bridge leg; switches at 25–50 kHz with 500 V blocking capability during dead-time. Use Value: 130 mJ EAS withstands inductive kickback during short-circuit events; 1.1 °C/W RthJC sustains 85 °C case temperature under continuous 5 A load. |
Use Scenario: 30 W AC/DC adapter for industrial sensors, accepting universal 85–265 VAC input. IC Role / Device Role / Timing Role: Primary-side power switch in discontinuous conduction mode (DCM) flyback topology operating at 65 kHz. Use Value: 24 nC Qg permits direct drive from UC384X controller; 1.7 Ω RDS(on) limits conduction loss to <1.5 W at full load. |
| DC-DC Boost Converter for EV Auxiliary Systems | High-Voltage LED Driver for Street Lighting |
|
Use Scenario: 12 V to 400 V boost converter powering auxiliary 48 V bus in commercial electric vehicles. IC Role / Device Role / Timing Role: Main switching transistor handling 15 A peak current and 400 V output voltage in hard-switched boost stage. Use Value: 500 V VDS provides 100 V safety margin above 400 V rail; 410–620 ns trr ensures clean turn-off with minimal voltage overshoot. |
Use Scenario: Constant-current 150 W LED driver for outdoor streetlights, operating from 277 VAC line with active PFC front-end. IC Role / Device Role / Timing Role: Secondary-side high-voltage switch in buck-derived constant-current regulator stage. Use Value: Low 25 μA IDSS at 500 V ensures negligible leakage current in standby; TO-252 thermal pad enables passive cooling on aluminum housing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | 500 V, 4.5 A, RDS(on) = 1.4 Ω, Qg = 22 nC, TO-220FP package | Higher thermal resistance (RthJC = 2.5 °C/W); requires larger heatsink than DPAK | Preferred where through-hole mounting and higher peak current margin are needed. |
| IXTP50N10P | 100 V, 50 A, RDS(on) = 0.022 Ω, Qg = 90 nC, TO-220 package | Lower voltage rating; unsuitable for >150 V DC bus applications | Only viable in low-voltage, high-current DC-DC stages-not a drop-in replacement. |
Compared with STP5NK50ZFP, IRFU430APBF offers superior thermal performance in surface-mount designs; compared with IXTP50N10P, it delivers essential 500 V isolation for mains-connected systems but trades off conduction loss for voltage capability.
Availability
IRFU430APBF is available at Aetrix Electronics and suitable for industrial UPS inverters, offline flyback SMPS, and high-voltage LED drivers requiring stable component supply and long-term manufacturing continuity.
Supply support for IRFU430APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFU430APBF belongs to Vishay's high-voltage Power MOSFET family engineered for rugged, high-efficiency switching in offline power conversion and uninterruptible power systems.
FAQ
What is the maximum continuous drain current for IRFU430APBF at 100 °C case temperature?
The IRFU430APBF supports 3.2 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and must be verified against actual board layout and heatsinking in the target application. The IRFU430APBF maintains safe operation up to 150 °C junction temperature under pulsed conditions.
Does IRFU430APBF have avalanche capability, and how is it rated?
Yes, the IRFU430APBF is fully rated for repetitive and single-pulse avalanche operation. It delivers 130 mJ single-pulse avalanche energy (EAS) at IAS = 5.0 A and 11 mJ repetitive avalanche energy (EAR) under defined test conditions. These values are measured per JEDEC standards and documented in the datasheet's Absolute Maximum Ratings section for the IRFU430APBF.
What is the gate threshold voltage range for IRFU430APBF, and how does it vary with temperature?
The IRFU430APBF has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.5 V at TJ = 25 °C, with a positive temperature coefficient of +0.60 V/°C. As junction temperature rises, VGS(th) increases-reaching ~4.5 V at 150 °C-ensuring inherent current limiting and improved short-circuit robustness. This behavior is confirmed in Figure 12d of the IRFU430APBF datasheet.
Can IRFU430APBF be driven directly by a microcontroller GPIO pin?
No, the IRFU430APBF requires a minimum VGS of 10 V for full enhancement and low RDS(on); typical 3.3 V or 5 V GPIO outputs cannot achieve its rated 1.7 Ω on-resistance. A dedicated gate driver (e.g., TC4427) or level-shifting circuit is required to deliver the 10 V drive and source/sink the 24 nC Qg. Driving the IRFU430APBF with insufficient gate voltage results in excessive conduction loss and thermal runaway.
What is the body diode forward voltage of IRFU430APBF, and under what conditions is it specified?
The IRFU430APBF body diode forward voltage (VSD) is 1.5 V maximum at TJ = 25 °C, IS = 5.0 A, and VGS = 0 V. This parameter is critical for freewheeling and synchronous rectification analysis. At elevated temperatures (e.g., 150 °C), VSD decreases slightly (~1.3 V), as shown in Figure 6 of the IRFU430APBF datasheet.
IRFU430APBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.7Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 490 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-251AA
IRFU430APBF FAQ
1.How can I place an order for IRFU430APBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFU430APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFU430APBF reliable?
The price and inventory of IRFU430APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU430APBF is usually 5 days.
3.What payment methods are accepted for IRFU430APBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU430APBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFU430APBF?
IRFU430APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFU430APBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFU430APBF?
For technical support, including IRFU430APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU430APBF requirements.
6.How does Aetrix verify that IRFU430APBF is sourced from the original manufacturer or authorized distributors?
All IRFU430APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU430APBF meets industry standards.
7.What is the process for return or replacement of IRFU430APBF?
All IRFU430APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU430APBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFU430APBF part is unused and in its original packaging.
Return procedure for IRFU430APBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFU430APBF Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

