Vishay Siliconix IRFU9010
- Part No.:
- IRFU9010
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IRFU9010.pdf
- Description:
- MOSFET P-CH 50V 5.3A TO251AA
- Quantity:
- Payment:

- Shipping:

Inventory:2,563
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Product details
Overview
IRFU9010 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in IPAK (TO-251) package, rated for -50 V drain-source voltage, 0.50 Ω RDS(on) at VGS = -10 V, and -5.3 A continuous drain current at TC = 25 °C. It delivers robust avalanche capability (136 mJ single-pulse), fast switching (td(off) ≤ 20 ns), and high dV/dt immunity (5.8 V/ns), making it suitable for DC/DC converter high-side switches and load switching in telecom power supplies.
For engineers reviewing the IRFU9010 datasheet, IRFU9010 pinout, IRFU9010 application, or IRFU9010 equivalent, key selection considerations include its straight-lead IPAK thermal performance (RthJC = 5.0 °C/W), body diode recovery characteristics (trr = 33–160 ns), gate charge profile (Qg = 9.1 nC max), and compatibility with -10 V gate drive in industrial low-voltage power management circuits.
Technical Context
This device uses Vishay's advanced trench MOSFET process to achieve low on-resistance while maintaining high transconductance (gfs = 1.7 S typ) and stable threshold voltage (-2.0 to -4.0 V). Its design supports repetitive avalanche operation and features integrated body diode with controlled reverse recovery (Qrr = 0.090–0.52 μC).
The IRFU9010 operates as a high-side switch in buck converters and hot-swap controllers, where its negative VGS(th) enables simple level-shifting gate control and its low Ciss (240 pF typ) reduces drive power requirements. Thermal design relies on direct heatsink mounting via the exposed drain pad per TO-251AA mechanical specification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -50 V - Maximum blocking voltage for low-voltage DC bus applications |
| RDS(on) @ VGS = -10 V | 0.50 Ω max - Enables <1.4 W conduction loss at -2.8 A, critical for thermally constrained PCBs |
| Qg | 9.1 nC max - Determines gate driver current requirement (~1.8 mA avg for 500 kHz switching) |
| ID (continuous) | -5.3 A @ TC = 25 °C - Defines maximum steady-state load current with heatsink |
| EAS | 136 mJ - Supports unclamped inductive turn-off without failure in flyback or synchronous rectifier snubbers |
| dV/dt rating | 5.8 V/ns - Ensures noise immunity during fast transient events in motor drive half-bridges |
| tr/tf | 47–71 ns / 35–59 ns - Enables efficient 200–500 kHz switching in isolated DC/DC topologies |
Pinout & Package
IRFU9010 uses the IPAK (TO-251AA) straight-lead package with exposed drain pad for thermal conduction. The package measures 8.89 × 6.35 mm (L × E), has 3 leads, and requires minimum 4.32 mm E1 pad width for heatsink attachment per Vishay drawing 91362.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (left) | Source (S) | Reference node for gate drive; connects to ground or low-side return path |
| Lead 2 (center) | Gate (G) | High-impedance control input; requires <±500 nA leakage budget and 9.1 nC total charge |
| Lead 3 (right) | Drain (D) | Power output terminal; electrically and thermally tied to exposed copper pad on underside |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports reliable operation under inductive switching stress without external clamping |
| Dynamic dV/dt immunity | 5.8 V/ns tolerance prevents false turn-on in noisy high-di/dt environments |
| Low gate charge (Qg) | Reduces driver power loss and simplifies gate resistor selection for 100–500 kHz designs |
| Enhanced body diode recovery | Qrr = 0.22 μC typ enables clean commutation in synchronous rectification |
| TO-251AA thermal interface | Exposed drain pad achieves 5.0 °C/W junction-to-case resistance with proper heatsink contact |
Applications
| DC/DC Converter High-Side Switch | Hot-Swap Controller Load Switch |
|---|---|
Use Scenario: Step-down regulation in telecom shelf power supplies with 12 V input and 5 V/3.3 V outputs. IC Role / Device Role / Timing Role: High-side P-channel switch controlling power delivery to downstream rails; operates in hard-switched mode at 300 kHz. Use Value: Low RDS(on) minimizes conduction loss (<1.5 W at full load), while fast tf reduces switching loss and EMI generation. | Use Scenario: Inrush current limiting during board insertion into live backplane systems. IC Role / Device Role / Timing Role: Controlled turn-on switch placed between input bus and system capacitance; driven by dedicated hot-swap controller. Use Value: Avalanche rating absorbs energy from capacitive load surges; body diode reverse recovery time ensures clean turn-off without voltage overshoot. |
| Motor Drive Half-Bridge Upper Arm | Industrial PLC Output Stage |
Use Scenario: 24 V brushed DC motor control in factory automation modules. IC Role / Device Role / Timing Role: Upper-leg switch in asymmetric half-bridge; commutated with freewheeling diode or synchronous rectifier. Use Value: 5.8 V/ns dV/dt rating prevents spurious turn-on during lower-arm switching transitions, improving reliability. | Use Scenario: Solid-state relay replacement for 24 V DC sensor/actuator outputs in programmable logic controllers. IC Role / Device Role / Timing Role: Load disconnect switch activated by microcontroller GPIO through level shifter. Use Value: -4.0 V VGS(th) max ensures full enhancement with standard 5 V logic, eliminating need for dedicated gate drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFU9110 | VDS = -60 V, RDS(on) = 0.75 Ω @ -10 V, Qg = 12 nC | Higher voltage rating but higher conduction loss; suited for 48 V systems | Select IRFU9110 only when >50 V blocking is required; IRFU9010 offers better efficiency at 12–24 V. |
| SiHFU9010-GE3 | Same die, lead-free/halogen-free construction, identical electrical specs | No functional difference; RoHS-compliant variant for regulated markets | Choose SiHFU9010-GE3 for new designs requiring environmental compliance; IRFU9010 remains viable for legacy production. |
Compared with IRFU9110, the IRFU9010 provides lower on-resistance and gate charge for improved efficiency in 24 V systems, while SiHFU9010-GE3 offers identical performance with RoHS compliance-making IRFU9010 the optimal choice for cost-sensitive, non-regulated 12–24 V industrial power stages.
Availability
IRFU9010 is available at Aetrix Electronics and suitable for DC/DC converters, hot-swap controllers, and industrial PLC output stages requiring stable component supply across long-lifecycle embedded programs.
Supply support for IRFU9010 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The IRFU9010 belongs to Vishay's "TrenchFET" Gen II P-channel power MOSFET family, engineered for high-efficiency, low-noise switching in space-constrained industrial and telecom power systems.
FAQ
What is the maximum continuous drain current rating for IRFU9010 at 100 °C case temperature?
The IRFU9010 supports -3.3 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the IPAK package; designers must ensure adequate heatsinking to maintain junction temperature below 150 °C under sustained load. The linear derating factor is 0.20 W/°C above 25 °C case temperature.
Does IRFU9010 have a specified avalanche energy rating, and how is it tested?
Yes, IRFU9010 is rated for 136 mJ single-pulse avalanche energy (EAS) under test conditions of VDD = -25 V, starting TJ = 25 °C, L = 9.7 mH, Rg = 25 Ω, and peak IL = -5.3 A. This rating confirms capability to absorb inductive switching energy without failure, validated per JEDEC JESD24-11 methodology.
What is the gate-source threshold voltage range for IRFU9010, and why does it matter for logic-level drive?
The IRFU9010 has a VGS(th) range of -2.0 V to -4.0 V at TJ = 25 °C. This wide threshold enables reliable turn-on with standard 5 V logic-level signals (since |VGS| > |VGS(th)|), but designers must verify sufficient overdrive (≥ -10 V recommended) to achieve the specified 0.50 Ω RDS(on) and avoid operating in the linear region.
How does the body diode performance of IRFU9010 compare to standard rectifiers in synchronous rectification?
The IRFU9010 body diode exhibits trr = 33–160 ns and Qrr = 0.090–0.52 μC, significantly faster than general-purpose rectifiers. This enables efficient synchronous rectification in buck converters, reducing reverse recovery losses and EMI. However, its VSD = -5.5 V at -5.3 A means it is not optimized for low forward drop-external Schottky diodes may be preferred for ultra-low-loss designs.
Is IRFU9010 pin-compatible with IRFR9010, and what is the key mechanical difference?
No, IRFU9010 is not pin-compatible with IRFR9010. IRFU9010 uses the IPAK (TO-251) straight-lead package with three inline leads and an exposed drain pad on the bottom, while IRFR9010 uses the DPAK (TO-252) surface-mount package with gull-wing leads. The footprint, soldering method, and thermal mounting approach differ fundamentally-PCB layout and assembly processes are not interchangeable.
IRFU9010 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 500mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 240 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-251AA
IRFU9010 FAQ
1.How can I place an order for IRFU9010 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFU9010 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFU9010 reliable?
The price and inventory of IRFU9010 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU9010 is usually 5 days.
3.What payment methods are accepted for IRFU9010?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU9010 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFU9010?
IRFU9010 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFU9010 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFU9010?
For technical support, including IRFU9010 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU9010 requirements.
6.How does Aetrix verify that IRFU9010 is sourced from the original manufacturer or authorized distributors?
All IRFU9010 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU9010 meets industry standards.
7.What is the process for return or replacement of IRFU9010?
All IRFU9010 units undergo pre-shipment inspection (PSI). If there is an issue with IRFU9010, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFU9010 part is unused and in its original packaging.
Return procedure for IRFU9010:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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