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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFU9010PBF

Name: IRFU9010PBF
Brand: Vishay Siliconix
SKU: IRFU9010PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU9010PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU9010PBF.pdf

Description:: MOSFET P-CH 50V 5.3A TO251AA

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Product details

Overview

IRFU9010PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in IPAK (TO-251) package, rated for -50 V V_DS, 0.50 Ω R_DS(on) at V_GS = -10 V, and -5.3 A continuous drain current at T_C = 25 °C. It delivers robust avalanche capability (136 mJ single-pulse), fast switching (t_r = 47–71 ns), and high dV/dt immunity (5.8 V/ns), making it suitable for DC/DC converter high-side switches and load disconnect circuits.

For engineers reviewing the IRFU9010PBF datasheet, IRFU9010PBF pinout, IRFU9010PBF application, or IRFU9010PBF equivalent, key selection considerations include its -50 V breakdown voltage, 0.50 Ω on-resistance at -10 V gate drive, TO-251 thermal performance (R_thJC = 5.0 °C/W), repetitive avalanche rating, and compatibility with standard logic-level gate drivers in low-power industrial and consumer power management designs.

Technical Context

This device uses Vishay's advanced trench MOSFET process to achieve low R_DS(on) while maintaining high transconductance (g_fs = 1.1–1.7 S) and stable threshold voltage (V_GS(th) = -2.0 to -4.0 V). Its body diode exhibits t_rr = 33–160 ns and Q_rr = 0.090–0.52 μC under specified conditions, supporting efficient synchronous rectification and inductive load switching.

The IRFU9010PBF operates as a high-side switch in buck converters and reverse polarity protection circuits, leveraging its negative gate threshold and low gate charge (Q_g = 6.1–9.1 nC) for reduced driver loss. Its IPAK package enables through-hole mounting with enhanced thermal coupling to PCB copper, delivering 25 W maximum power dissipation at T_A = 25 °C with proper layout.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-50 V - Maximum blocking voltage for high-side switch applications up to 40 V bus rails
R_DS(on)	0.50 Ω max at V_GS = -10 V - Enables <1.4 W conduction loss at -5.3 A, critical for thermally constrained PCBs
Q_g	9.1 nC max - Determines gate driver current requirement; supports 100 kHz+ switching with ≤100 mA peak drive
I_D (cont.)	-5.3 A at T_C = 25 °C - Specifies safe DC current with heatsink; derates linearly to -3.3 A at 100 °C case temperature
E_AS	136 mJ - Energy-handling capability during unclamped inductive switching, enabling reliable operation without snubbers
dV/dt	5.8 V/ns - High immunity to false turn-on in noisy environments such as motor drives and SMPS
R_thJC	5.0 °C/W max - Thermal resistance from junction to case enables direct heatsink attachment for >15 W sustained power

Pinout & Package

IRFU9010PBF uses the IPAK (TO-251) straight-lead package with exposed drain pad for thermal and electrical connection. The package features three leads: Gate (G), Drain (D), and Source (S), arranged in G-D-S order when viewed from top with marking side up and leads pointing downward.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts -10 V logic-level drive; 3.0 nC gate-source charge enables fast turn-on with minimal driver stress
D	Drain (high-side switch node)	Exposed metal tab connects electrically and thermally to internal drain; must be isolated from other potentials unless referenced to ground
S	Source (return path)	Common reference for gate drive; ties to system ground or floating rail depending on high-side configuration

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports repeated inductive energy dump without degradation; eliminates need for external clamping in many DC/DC topologies
Dynamic dV/dt rated	5.8 V/ns immunity prevents spurious turn-on during fast voltage transients in high-noise power systems
Low gate charge (Q_g)	9.1 nC max reduces switching losses and eases gate driver selection for battery-powered or efficiency-critical designs
Enhanced body diode recovery	t_rr = 33–160 ns and Q_rr = 0.090–0.52 μC enable clean commutation in synchronous rectifier and flyback applications
Simple gate drive	V_GS(th) = -2.0 to -4.0 V allows direct interface with microcontroller GPIO or dedicated level-shifted drivers without complex biasing

Applications

Reverse Polarity Protection	DC/DC Converter High-Side Switch
Use Scenario: Preventing damage from incorrect battery or adapter connection in portable electronics and automotive accessories. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in series with input rail; conducts only when V_IN is correctly polarized. Use Value: Eliminates 0.3–0.7 V diode drop, improving efficiency by up to 5% at 3–5 A loads while supporting -50 V fault tolerance.	Use Scenario: Controlling power delivery in non-isolated buck regulators for FPGA core supplies and telecom line cards. IC Role / Device Role / Timing Role: High-side switch in synchronous buck topology; duty-cycle modulated at 100–500 kHz to regulate output voltage. Use Value: 0.50 Ω R_DS(on) limits conduction loss to <1.4 W at full load, enabling compact thermal design without forced air cooling.
Load Disconnect Switch	Motor Drive Brake Circuit
Use Scenario: Isolating subsystems during sleep mode or fault conditions in industrial PLC I/O modules and smart sensors. IC Role / Device Role / Timing Role: Power FET placed between supply and load; turned off to cut off leakage paths and reduce standby current. Use Value: <250 μA IDSS ensures <10 μA system standby draw per channel, meeting stringent energy-saving requirements.	Use Scenario: Rapidly dissipating stored motor energy during emergency stop or direction reversal in small DC motors and solenoids. IC Role / Device Role / Timing Role: Active clamp switch across motor terminals; activated during PWM off-time to recirculate current via body diode and R_DS(on). Use Value: 136 mJ E_AS rating handles typical motor inductance spikes without failure, extending reliability over mechanical contactors.

Reverse Polarity Protection

DC/DC Converter High-Side Switch

Use Scenario: Preventing damage from incorrect battery or adapter connection in portable electronics and automotive accessories.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in series with input rail; conducts only when V_IN is correctly polarized.

Use Value: Eliminates 0.3–0.7 V diode drop, improving efficiency by up to 5% at 3–5 A loads while supporting -50 V fault tolerance.

Use Scenario: Controlling power delivery in non-isolated buck regulators for FPGA core supplies and telecom line cards.

IC Role / Device Role / Timing Role: High-side switch in synchronous buck topology; duty-cycle modulated at 100–500 kHz to regulate output voltage.

Use Value: 0.50 Ω R_DS(on) limits conduction loss to <1.4 W at full load, enabling compact thermal design without forced air cooling.

Load Disconnect Switch

Motor Drive Brake Circuit

Use Scenario: Isolating subsystems during sleep mode or fault conditions in industrial PLC I/O modules and smart sensors.

IC Role / Device Role / Timing Role: Power FET placed between supply and load; turned off to cut off leakage paths and reduce standby current.

Use Value: <250 μA IDSS ensures <10 μA system standby draw per channel, meeting stringent energy-saving requirements.

Use Scenario: Rapidly dissipating stored motor energy during emergency stop or direction reversal in small DC motors and solenoids.

IC Role / Device Role / Timing Role: Active clamp switch across motor terminals; activated during PWM off-time to recirculate current via body diode and R_DS(on).

Use Value: 136 mJ E_AS rating handles typical motor inductance spikes without failure, extending reliability over mechanical contactors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9010PbF	DPAK (TO-252) surface-mount package; identical electrical specs but lower R_thJC (4.0 °C/W) and higher R_thJA (110 °C/W)	Better suited for automated assembly and high-density layouts; requires thermal pad on PCB for optimal heat transfer	Select IRFR9010PbF for SMT production; IRFU9010PBF for through-hole prototyping or manual repair-friendly designs
SiHFU9010-GE3	Same IPAK package and pinout; Pb-free/halogen-free construction; identical V_DS, R_DS(on), and Q_g specs per Vishay documentation	Complies with RoHS 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1; no reflow restrictions	Choose SiHFU9010-GE3 for new designs requiring full environmental compliance; IRFU9010PBF remains viable for legacy or cost-sensitive builds

Compared with IRFU9010PBF, IRFR9010PbF offers superior thermal resistance to heatsink but demands precise PCB layout for thermal relief, while SiHFU9010-GE3 provides identical performance with enhanced regulatory alignment-making IRFU9010PBF the preferred choice where lead-free conversion is not mandated and through-hole assembly is required.

Availability

IRFU9010PBF is available at Aetrix Electronics and suitable for reverse polarity protection, DC/DC converter high-side switching, and load disconnect applications requiring stable component supply across industrial, consumer, and computing markets.

Supply support for IRFU9010PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The IRFU9010PBF belongs to Vishay's industry-standard power MOSFET family designed for medium-voltage, medium-current switching in space-constrained and thermally demanding applications including power supplies, motor controls, and protection circuits.

FAQ

What is the maximum continuous drain current for IRFU9010PBF at 100 °C case temperature?

The IRFU9010PBF supports -3.3 A continuous drain current at T_C = 100 °C, derived from its linear derating factor of 0.20 W/°C and 25 W maximum power dissipation at T_A = 25 °C. This value reflects thermal limitations of the IPAK package under real-world heatsinking conditions and must be validated against actual board layout and ambient airflow.

Does IRFU9010PBF require a gate resistor for safe operation?

Yes, IRFU9010PBF benefits from an external gate resistor (typically 10–100 Ω) to control dI/dt and suppress ringing during switching transitions. While not strictly mandatory for DC operation, a gate resistor is essential in high-frequency or inductive-load applications to prevent oscillation and ensure reliable turn-off, especially given its 9.1 nC total gate charge and 5.9 nC gate-drain charge.

Can IRFU9010PBF be used in place of an N-channel MOSFET in high-side configurations?

Yes, IRFU9010PBF is specifically designed for high-side switching as a P-channel MOSFET, eliminating the need for bootstrap circuitry or level-shifting required by N-channel devices. Its -2.0 to -4.0 V gate threshold allows direct logic-level control from 3.3 V or 5 V microcontrollers when referenced to the source, simplifying design in low-to-medium power applications.

What is the body diode forward voltage of IRFU9010PBF at -5.3 A and 25 °C?

The body diode forward voltage (V_SD) of IRFU9010PBF is -5.5 V maximum at T_J = 25 °C and I_S = -5.3 A with V_GS = 0 V. This relatively high drop reflects its optimized R_DS(on)/Q_rr trade-off and indicates the device is intended for active switching-not freewheeling-so synchronous rectification or external Schottky clamping is recommended for efficiency-critical paths.

Is IRFU9010PBF suitable for avalanche energy handling in unclamped inductive switching?

Yes, IRFU9010PBF is explicitly rated for repetitive avalanche operation with a single-pulse avalanche energy (E_AS) of 136 mJ and repetitive avalanche current (I_AR) of -5.3 A. These ratings are validated per Vishay's test conditions (V_DD = -25 V, L = 9.7 mH, R_g = 25 Ω), confirming suitability for flyback, relay driving, and other inductive load switching without external snubbers.

IRFU9010PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

IRFU9010PBF FAQ

1.How can I place an order for IRFU9010PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU9010PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU9010PBF reliable?

The price and inventory of IRFU9010PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU9010PBF is usually 5 days.

3.What payment methods are accepted for IRFU9010PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU9010PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU9010PBF?

IRFU9010PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU9010PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU9010PBF?

For technical support, including IRFU9010PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU9010PBF requirements.

6.How does Aetrix verify that IRFU9010PBF is sourced from the original manufacturer or authorized distributors?

All IRFU9010PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU9010PBF meets industry standards.

7.What is the process for return or replacement of IRFU9010PBF?

All IRFU9010PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU9010PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU9010PBF part is unused and in its original packaging.

Return procedure for IRFU9010PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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