Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRFU9014PBF

Part No.:
IRFU9014PBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIRFU9014PBF.pdf
Description:
MOSFET P-CH 60V 5.1A TO251AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:406

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFU9014PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in IPAK (TO-251) through-hole package, rated for -60 V VDS, 0.50 Ω RDS(on) at VGS = -10 V, and -5.1 A continuous drain current at TC = 25 °C. It features repetitive avalanche rating, fast switching (tr = 63 ns), and dynamic dV/dt capability (-4.5 V/ns), enabling use in DC-DC converters and motor control circuits.

For engineers reviewing the IRFU9014PBF datasheet, IRFU9014PBF pinout, IRFU9014PBF application, or IRFU9014PBF equivalent, this device serves as a rugged, low-RDS(on) P-channel switch for industrial power supplies, load switching, and high-side configurations where logic-level gate drive compatibility and PCB-mount thermal performance are critical.

Technical Context

The IRFU9014PBF employs third-generation trench MOSFET technology optimized for low conduction loss and robust avalanche energy handling (EAS = 140 mJ). Its gate threshold voltage range of -2.0 V to -4.0 V supports both standard and logic-level gate drivers, while its body diode exhibits trr = 80–160 ns and Qrr = 0.096–0.19 μC for controlled commutation in synchronous rectification.

Thermal design is enabled by RthJC = 5.0 °C/W (junction-to-case) and RthJA = 50 °C/W (PCB mount), with maximum power dissipation of 2.5 W on a 1" FR-4 board. The device's internal source and drain inductances (LS = 7.5 nH, LD = 4.5 nH) are characterized for accurate switching waveform modeling.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-60 V - Maximum blocking voltage in high-side switch or reverse polarity protection
RDS(on) @ VGS = -10 V0.50 Ω - Low conduction loss enabling <1.3 W I²R loss at -3.1 A continuous operation
ID Continuous @ TC = 25 °C-5.1 A - Sustained current capability with heatsink or copper pour on PCB
Qg12 nC - Gate charge defining driver strength requirement for 100 kHz+ switching
EAS140 mJ - Single-pulse avalanche energy tolerance for inductive load turn-off safety
tr/tf63 ns / 31 ns - Fast edge rates supporting efficient hard-switched topologies
RthJA (PCB mount)50 °C/W - Thermal resistance enabling 2.5 W dissipation on standard 1" FR-4 board

Pinout & Package

IRFU9014PBF uses the IPAK (TO-251) through-hole package with three terminals: Drain (D), Gate (G), and Source (S). The case outline conforms to JEDEC TO-251AA, featuring a single straight lead configuration optimized for wave soldering and mechanical stability in industrial PCBs.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D)High-current output nodeConnected to load or supply rail; electrically tied to metal tab for thermal conduction
Gate (G)Control inputReceives negative voltage relative to source to turn on; requires ≤ ±20 V absolute rating
Source (S)Reference node and current return pathCommon connection point for gate drive reference and load return; forms body diode anode

Key Features

FeatureDesign Value
Repetitive avalanche ratedEnables reliable operation under unclamped inductive switching without external snubbers
Dynamic dV/dt rating-4.5 V/ns immunity prevents false turn-on during high dv/dt transients in motor drives
P-channel enhancement modeSimplifies high-side switching architecture by eliminating bootstrap circuitry
Fast switching with low Qgd5.1 nC gate-drain charge minimizes Miller plateau duration and improves EMI profile
Through-hole IPAK (TO-251)Provides mechanical robustness and superior thermal transfer vs. SO-8 in high-vibration environments

Applications

Industrial Power SupplyReverse Polarity Protection

Use Scenario: Input stage of 24 V/48 V industrial DC power module with overvoltage and surge immunity requirements.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as active OR-ing switch and polarity guard.

Use Value: Leverages -60 V VDS rating and -5.1 A ID to block reverse battery connection while maintaining <0.5 V drop at full load.

Use Scenario: 12 V automotive accessory module requiring fail-safe protection against accidental battery reversal.

IC Role / Device Role / Timing Role: Standalone reverse polarity switch placed between connector and downstream regulator.

Use Value: Uses intrinsic body diode forward voltage (VSD = -5.5 V) and ruggedized avalanche rating to absorb reverse-energy transients without latch-up.

DC Motor ControlLoad Switching

Use Scenario: H-bridge half-bridge leg in brushed DC motor driver for HVAC actuators.

IC Role / Device Role / Timing Role: Upper-leg P-channel switch controlling motor voltage polarity and direction.

Use Value: Achieves <63 ns rise time and 0.50 Ω RDS(on) to minimize conduction loss and enable 20 kHz PWM without excessive heating.

Use Scenario: Programmable 5 V/3.3 V system rail enable in programmable logic controller (PLC) backplane.

IC Role / Device Role / Timing Role: Controlled power gating element activated by microcontroller GPIO.

Use Value: Gate threshold (-2.0 to -4.0 V) ensures clean turn-on with 3.3 V logic-level drivers, reducing BOM count vs. level-shifter solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFU9110PBF-100 V VDS, 0.36 Ω RDS(on), higher Qg (22 nC)Better voltage margin but slower switching; suited for 48 V+ systems with lower frequency operationSelect when higher blocking voltage is required and gate drive strength allows increased Qg.
SiHFU9014-GE3Identical electrical specs; halogen-free, RoHS-compliant packagingNo functional difference; preferred for environmentally regulated industrial deploymentsChoose for compliance-critical designs where Pb-free/halogen-free certification is mandatory.

Compared with IRFU9014PBF, IRFU9110PBF offers higher voltage headroom at the cost of switching speed and driver demand, while SiHFU9014-GE3 delivers identical performance with enhanced environmental compliance-making it a drop-in replacement where regulatory documentation is required.

Availability

IRFU9014PBF is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and reverse polarity protection circuits requiring stable component supply across multi-year production cycles.

Supply support for IRFU9014PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and thermal performance.

The IRFU9014PBF belongs to Vishay's third-generation power MOSFET family, engineered for high-efficiency, high-reliability industrial and automotive-grade power conversion where avalanche robustness and low RDS(on) are critical.

FAQ

What is the maximum continuous drain current for IRFU9014PBF at 100 °C case temperature?

The IRFU9014PBF supports -3.2 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the IPAK package and must be validated with actual PCB layout and ambient conditions. Designers should consult Fig. 9 (Maximum Drain Current vs. Case Temperature) in the Vishay datasheet S26-0614 for precise thermal boundary mapping before finalizing heatsinking.

Does IRFU9014PBF have a specified avalanche energy rating?

Yes, IRFU9014PBF is repetitively avalanche rated with EAS = 140 mJ (single-pulse) and EAR = 2.5 mJ (repetitive), tested under defined conditions (VDD = -25 V, L = 6.3 mH, Rg = 25 Ω). These values confirm suitability for inductive load switching without external clamping, provided pulse width and duty cycle remain within limits shown in Fig. 11 and Fig. 12 of the datasheet.

What is the gate-source threshold voltage range for IRFU9014PBF?

The gate-source threshold voltage (VGS(th)) for IRFU9014PBF is specified from -2.0 V to -4.0 V at VDS = VGS and ID = -250 μA. This range enables compatibility with both standard -10 V gate drivers and logic-level controllers operating down to -3.3 V, making IRFU9014PBF suitable for direct interfacing with microcontrollers in low-voltage industrial systems.

Can IRFU9014PBF be used in surface-mount applications?

No, IRFU9014PBF is specifically the straight-lead (through-hole) version in IPAK (TO-251) package. For surface-mount use, the DPAK (TO-252) variant IRFR9014PbF-BE3 is recommended. Mixing packages risks solder joint reliability and thermal performance-IRFU9014PBF requires wave or hand-soldering into plated-through holes per Vishay's mounting guidelines in document 71197.

What is the typical body diode reverse recovery time of IRFU9014PBF?

The body diode reverse recovery time (trr) of IRFU9014PBF is 80–160 ns under test conditions of TJ = 25 °C, IF = -6.7 A, and dI/dt = 100 A/μs. This parameter is critical for synchronous rectification and freewheeling paths; designers must account for associated Qrr (0.096–0.19 μC) in efficiency calculations and EMI filtering.

IRFU9014PBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
500mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
270 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-251AA

IRFU9014PBF FAQ

1.How can I place an order for IRFU9014PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU9014PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU9014PBF reliable?

The price and inventory of IRFU9014PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU9014PBF is usually 5 days.

3.What payment methods are accepted for IRFU9014PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU9014PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU9014PBF?

IRFU9014PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU9014PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU9014PBF?

For technical support, including IRFU9014PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU9014PBF requirements.

6.How does Aetrix verify that IRFU9014PBF is sourced from the original manufacturer or authorized distributors?

All IRFU9014PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU9014PBF meets industry standards.

7.What is the process for return or replacement of IRFU9014PBF?

All IRFU9014PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU9014PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU9014PBF part is unused and in its original packaging.

Return procedure for IRFU9014PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFU9014PBF Tags

  • IRFU9014PBF
  • IRFU9014PBF PDF
  • IRFU9014PBF Datasheet
  • IRFU9014PBF Specifications
  • IRFU9014PBF Images
  • Vishay Siliconix
  • Vishay Siliconix IRFU9014PBF
  • Buy IRFU9014PBF
  • IRFU9014PBF Price
  • IRFU9014PBF Distributor
  • IRFU9014PBF Supplier
  • IRFU9014PBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER