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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFU9110PBF

Name: IRFU9110PBF
Brand: Vishay Siliconix
SKU: IRFU9110PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU9110PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU9110PBF.pdf

Description:: MOSFET P-CH 100V 3.1A TO251AA

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Product details

Overview

IRFU9110PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in IPAK (TO-251) through-hole package, rated for -100 V drain-source voltage, 1.2 Ω R_DS(on) at V_GS = -10 V, and -3.1 A continuous drain current at T_C = 25 °C. It supports fast switching, repetitive avalanche operation, and is optimized for DC-DC converters, load switching, and high-side power control in industrial power supplies.

For engineers reviewing the IRFU9110PBF datasheet, IRFU9110PBF pinout, IRFU9110PBF application, or IRFU9110PBF equivalent, this device is evaluated for ruggedized P-channel switching where dV/dt immunity, body diode recovery performance, and PCB-mount thermal dissipation up to 2.5 W are critical selection criteria.

Technical Context

This MOSFET employs third-generation trench-gate silicon technology enabling low on-resistance with robust avalanche capability (E_AS = 140 mJ, I_AR = -3.1 A). Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard -10 V gate drive while maintaining noise immunity.

Dynamic characteristics include Q_g = 8.7 nC, Q_gd = 4.1 nC, and fast switching times (t_d(on) = 10 ns, t_f = 17 ns), supporting high-frequency operation in synchronous rectification and PWM-controlled power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Supports input rails up to 80 V DC with safety margin in industrial power systems
R_DS(on)	1.2 Ω @ V_GS = -10 V - Enables <1.1 W conduction loss at -3.1 A, suitable for compact heatsink-free designs
I_D (cont.)	-3.1 A @ T_C = 25 °C - Rated for sustained load switching in 24–48 V distribution networks
Q_g	8.7 nC - Low gate charge reduces driver power requirement and enables efficient 100–500 kHz switching
E_AS	140 mJ - Withstands unclamped inductive energy in relay/snubberless solenoid drivers without failure
dV/dt rating	-5.5 V/ns - Resists false triggering in noisy motor-control or EMI-prone environments
T_J range	-55 °C to +150 °C - Qualified for extended-temperature industrial and automotive under-hood applications

Pinout & Package

IRFU9110PBF uses the IPAK (TO-251AA) through-hole package with gull-wing leads, optimized for wave soldering and mechanical stability in high-vibration environments. Thermal pad on drain side enables direct PCB copper pour heat sinking.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (G)	Gate	Control terminal; requires -10 V for full enhancement; gate leakage ≤ ±100 nA ensures low standby current
Lead 2 (D)	Drain	High-side switch node; connected to internal thermal pad for low R_thJC = 5.0 °C/W to heatsink
Lead 3 (S)	Source	Power return path; body diode anode; V_SD = -5.5 V enables reverse polarity protection

Key Features

Feature	Design Value
Repetitive avalanche rated	Rated for unlimited repetitive -3.1 A avalanche events (I_AR) with pulse width limited by T_J max - eliminates need for external clamping in inductive load circuits
Dynamic dV/dt immunity	Guaranteed -5.5 V/ns - prevents spurious turn-on during fast bus transients in motor drives and UPS systems
Fast body diode recovery	t_rr = 80–160 ns, Q_rr = 0.17–0.30 μC - minimizes switching losses and EMI in freewheeling paths
Pb-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - qualified for green manufacturing and export compliance
PCB-mount power dissipation	2.5 W at T_A = 25 °C on 1" FR-4 - enables cost-effective board-level thermal management without discrete heatsinks

Applications

Industrial Power Supply	DC Motor Control
Use Scenario: High-side switch in 24 V/48 V offline power supplies for PLC I/O modules and sensor interfaces. IC Role / Device Role / Timing Role: P-channel MOSFET configured as active-high load switch controlling +24 V rail sequencing and fault isolation. Use Value: R_DS(on) = 1.2 Ω limits conduction loss to <1.1 W at full load; avalanche rating handles transformer reset energy without snubbers.	Use Scenario: Directional H-bridge half-bridge upper switch in brushed DC motor drivers for factory automation actuators. IC Role / Device Role / Timing Role: High-side P-channel switch enabling bidirectional current flow with logic-level gate control. Use Value: Fast t_f = 17 ns and low Q_gd = 4.1 nC reduce shoot-through risk and improve PWM efficiency above 20 kHz.
Reverse Polarity Protection	Load Switching in Telecom
Use Scenario: Input protection circuit in 48 V telecom power entry modules preventing damage from accidental battery reversal. IC Role / Device Role / Timing Role: P-channel MOSFET placed between input connector and downstream DC-DC converter, operating in linear mode during fault. Use Value: V_SD = -5.5 V and ruggedized body diode withstand reverse-bias stress; -100 V rating covers surge transients per IEC 61000-4-5.	Use Scenario: Hot-swap controller front-end switch in modular server power distribution units (PDUs). IC Role / Device Role / Timing Role: Inrush-limited high-side switch managing sequential power-up of blade servers and storage subsystems. Use Value: Repetitive avalanche capability absorbs energy from capacitive loads during hot-plug insertion; TO-251 mechanical robustness resists vibration-induced solder fatigue.

Industrial Power Supply

DC Motor Control

Use Scenario: High-side switch in 24 V/48 V offline power supplies for PLC I/O modules and sensor interfaces.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as active-high load switch controlling +24 V rail sequencing and fault isolation.

Use Value: R_DS(on) = 1.2 Ω limits conduction loss to <1.1 W at full load; avalanche rating handles transformer reset energy without snubbers.

Use Scenario: Directional H-bridge half-bridge upper switch in brushed DC motor drivers for factory automation actuators.

IC Role / Device Role / Timing Role: High-side P-channel switch enabling bidirectional current flow with logic-level gate control.

Use Value: Fast t_f = 17 ns and low Q_gd = 4.1 nC reduce shoot-through risk and improve PWM efficiency above 20 kHz.

Reverse Polarity Protection

Load Switching in Telecom

Use Scenario: Input protection circuit in 48 V telecom power entry modules preventing damage from accidental battery reversal.

IC Role / Device Role / Timing Role: P-channel MOSFET placed between input connector and downstream DC-DC converter, operating in linear mode during fault.

Use Value: V_SD = -5.5 V and ruggedized body diode withstand reverse-bias stress; -100 V rating covers surge transients per IEC 61000-4-5.

Use Scenario: Hot-swap controller front-end switch in modular server power distribution units (PDUs).

IC Role / Device Role / Timing Role: Inrush-limited high-side switch managing sequential power-up of blade servers and storage subsystems.

Use Value: Repetitive avalanche capability absorbs energy from capacitive loads during hot-plug insertion; TO-251 mechanical robustness resists vibration-induced solder fatigue.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFU9014PBF	V_DS = -60 V, R_DS(on) = 0.32 Ω @ -10 V, lower voltage rating but 3.7× lower on-resistance	Better suited for 24 V systems requiring minimal conduction loss; not rated for 48 V+ bus transients	Select when system V_IN ≤ 40 V and thermal budget demands sub-0.5 W conduction loss at full load
SiHFU9110-GE3	Identical electrical specs and TO-251 package; Pb-free/halogen-free construction per JEDEC J-STD-609A Class 2a	No functional difference; preferred for RoHS-compliant production with traceable green materials	Choose for new designs requiring documented halogen-free status and supply chain transparency

Compared with IRFU9110PBF, IRFU9014PBF trades off voltage headroom for significantly lower R_DS(on), while SiHFU9110-GE3 delivers identical performance with enhanced environmental compliance-neither is pin-compatible with IRFU9110PBF due to differing lead finish and marking, though both share identical TO-251 footprint and thermal profile.

Availability

IRFU9110PBF is available at Aetrix Electronics and suitable for industrial power supplies, DC motor controllers, reverse polarity protection circuits, and telecom load switching requiring stable component supply across multi-year production cycles.

Supply support for IRFU9110PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The IRFU9110PBF belongs to Vishay's third-generation high-voltage P-channel power MOSFET family, engineered for ruggedized switching in space-constrained, thermally challenging power conversion systems where avalanche endurance and dV/dt immunity are mandatory.

FAQ

What is the maximum continuous drain current rating for IRFU9110PBF at 100 °C case temperature?

The IRFU9110PBF is rated for -2.0 A continuous drain current at T_C = 100 °C, reflecting its thermal derating factor of 0.20 W/°C from the 25 °C rating of -3.1 A. This value is confirmed in the Absolute Maximum Ratings table and applies under steady-state PCB-mount conditions with adequate copper area. Designers must verify junction temperature using R_thJA = 50 °C/W (PCB mount) to ensure T_J remains below 150 °C.

Does IRFU9110PBF support logic-level gate drive?

No, IRFU9110PBF is not a logic-level MOSFET. Its gate threshold voltage range is -2.0 V to -4.0 V, and it is specified for full enhancement at V_GS = -10 V. While it may partially turn on at -5 V, R_DS(on) is not guaranteed in that region. For true logic-level operation, consider alternatives like IRFU9014PBF (V_GS(th) = -1.0 to -2.5 V) or dedicated logic-level P-channel devices.

What is the body diode forward voltage of IRFU9110PBF and how does it affect reverse recovery?

The IRFU9110PBF body diode exhibits V_SD = -5.5 V at I_S = -3.1 A and T_J = 25 °C. Its reverse recovery time t_rr is 80–160 ns with Q_rr = 0.17–0.30 μC, indicating a moderately fast, soft-recovery intrinsic diode. This performance supports efficient freewheeling in buck converters and reduces voltage spikes during commutation, but designers should still account for diode losses in high-duty-cycle applications.

Can IRFU9110PBF be used in avalanche mode for energy clamping?

Yes, IRFU9110PBF is explicitly rated for repetitive avalanche operation with I_AR = -3.1 A and E_AR = 2.5 mJ per pulse, and single-pulse E_AS = 140 mJ. These ratings are validated per test conditions in Figure 12 and require strict adherence to pulse width and duty cycle limits to avoid exceeding T_J(max) = 150 °C. It is suitable for unclamped inductive switching in relay drivers and solenoid controls without external snubbers.

What is the thermal resistance from junction to ambient for IRFU9110PBF in standard PCB mounting?

When mounted on a 1" square FR-4 PCB, the IRFU9110PBF has R_thJA = 50 °C/W. This value assumes recommended minimum pad layout per Application Note 826 and defines the maximum power dissipation of 2.5 W at T_A = 25 °C. For higher power, designers must add thermal vias or external heatsinking, as the DPAK variant (IRFR9110PBF) offers lower R_thJC = 5.0 °C/W but IRFU9110PBF's TO-251 package relies on PCB copper for thermal transfer.

IRFU9110PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

IRFU9110PBF FAQ

1.How can I place an order for IRFU9110PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU9110PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU9110PBF reliable?

The price and inventory of IRFU9110PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU9110PBF is usually 5 days.

3.What payment methods are accepted for IRFU9110PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU9110PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU9110PBF?

IRFU9110PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU9110PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU9110PBF?

For technical support, including IRFU9110PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU9110PBF requirements.

6.How does Aetrix verify that IRFU9110PBF is sourced from the original manufacturer or authorized distributors?

All IRFU9110PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU9110PBF meets industry standards.

7.What is the process for return or replacement of IRFU9110PBF?

All IRFU9110PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU9110PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU9110PBF part is unused and in its original packaging.

Return procedure for IRFU9110PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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