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Vishay Siliconix IRFU9210PBF
- Part No.:
- IRFU9210PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IRFU9210PBF.pdf
- Description:
- MOSFET P-CH 200V 1.9A TO251AA
- Quantity:
- Payment:
- Shipping:
Inventory:2,681
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Product details
Overview
IRFU9210PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in straight-lead IPAK (TO-251) package, rated for -200 V drain-source voltage, 3.0 Ω RDS(on) at VGS = -10 V, and -1.9 A continuous drain current at TC = 25 °C. It supports fast switching, repetitive avalanche operation, and is designed for through-hole mounting in high-voltage DC-DC converters and industrial motor control.
For engineers reviewing the IRFU9210PBF datasheet, IRFU9210PBF pinout, IRFU9210PBF application, or IRFU9210PBF equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery characteristics, gate charge profile, and direct-mount PCB thermal resistance - all confirmed from Vishay's official S26-0614-Rev. E datasheet and package drawings.
Technical Context
This device employs planar V-groove trench technology to achieve low on-resistance while maintaining ruggedness against unclamped inductive switching. Its -200 V VDS rating and -1.9 A ID (TC = 25 °C) support high-side switching in off-line SMPS and battery protection circuits where reverse polarity blocking is required.
The IRFU9210PBF features a built-in body diode with trr = 110–220 ns and Qrr = 0.56–1.1 μC, enabling moderate-frequency synchronous rectification. Its dV/dt immunity of -5.0 V/ns and repetitive avalanche energy of 2.5 mJ allow reliable operation under transient overvoltage conditions without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -200 V - Supports high-side switching in 170 V AC-input rectified rails |
| RDS(on) | 3.0 Ω @ VGS = -10 V - Enables <1.1 W conduction loss at -1.1 A |
| ID (continuous) | -1.9 A @ TC = 25 °C - Requires heatsinking above ~60 °C case temperature |
| Qg | 8.9 nC - Compatible with standard gate drivers delivering ≥1 A peak current |
| tr/tf | 12 ns / 13 ns - Enables >500 kHz switching in hard-switched topologies |
| EAS | 300 mJ (single-pulse) - Absorbs energy during inductive turn-off without failure |
| RthJA (PCB mount) | 50 °C/W - Achieved on 1" square FR-4 board; defines minimum copper area needed |
Pinout & Package
IRFU9210PBF uses the IPAK (TO-251) straight-lead through-hole package with three terminals: Drain (D), Gate (G), and Source (S). The tab is electrically connected to the Drain, requiring isolation when mounted to a heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | High-voltage power output node | Electrically tied to metal tab; must be insulated from chassis/heatsink unless referenced to system ground |
| Gate | Control input | Requires -10 V to fully enhance; threshold range -2.0 to -4.0 V ensures logic-level compatibility with dedicated P-ch drivers |
| Source | Reference node for gate drive and load return | Connected to load ground or positive rail in high-side configuration; carries full load current |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Withstands 2.5 mJ per pulse at IAR = -1.9 A, enabling robustness in inductive load switching without snubber networks |
| P-channel enhancement mode | Eliminates need for high-side level-shifting circuitry in simple high-side switch applications |
| Dynamic dV/dt rating | -5.0 V/ns immunity prevents false turn-on during fast voltage transients across drain-source |
| Fast switching with low Qg | 8.9 nC total gate charge enables efficient operation up to 1 MHz with minimal driver power loss |
| Body diode with controlled Qrr | 0.56–1.1 μC reverse recovery charge reduces switching losses and EMI in freewheeling paths |
Applications
| Industrial Motor Control | High-Voltage DC-DC Converters |
|---|---|
Use Scenario: Controlling direction and braking of 24–48 V brushed DC motors in factory automation systems. IC Role / Device Role / Timing Role: High-side P-channel switch enabling bidirectional current flow and regenerative braking via body diode conduction. Use Value: -200 V rating provides margin against back-EMF spikes; repetitive avalanche capability eliminates need for external clamping diodes. | Use Scenario: Isolated flyback or forward converter primary-side switch in telecom power supplies operating from 375 V DC bus. IC Role / Device Role / Timing Role: High-side synchronous rectifier or auxiliary switch in active clamp circuits requiring negative gate control. Use Value: Low Qg and fast tr/tf reduce switching losses at 200–500 kHz; RDS(on) stability over temperature ensures consistent efficiency across ambient range. |
| Battery Protection Circuits | Off-Line AC-DC Power Supplies |
Use Scenario: Reverse polarity and overcurrent protection in 12–24 V lead-acid or LiFePO4 battery packs. IC Role / Device Role / Timing Role: Series-connected P-MOSFET acting as ideal diode replacement with ultra-low forward drop. Use Value: VGS(th) of -2.0 to -4.0 V allows direct control by microcontroller GPIO; body diode VSD = -5.8 V limits reverse leakage during fault conditions. | Use Scenario: High-side switch in auxiliary power supply (APS) or bias winding regulator for main controller ICs in 115/230 V AC-input SMPS. IC Role / Device Role / Timing Role: Standby power switch isolating auxiliary circuitry during no-load conditions. Use Value: -200 V VDS withstands peak rectified line voltage (≈325 V) with safety margin; 50 °C/W RthJA (PCB mount) enables compact layout without dedicated heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9210PBF | DPAK (TO-252) surface-mount package; identical electrical specs except RthJC = 5.0 °C/W vs. 4.5 °C/W for IRFU9210PBF | Suitable for automated SMT assembly; requires different footprint and reflow profile | Select IRFR9210PBF only if board design uses surface-mount layout and thermal management relies on PCB copper area rather than heatsink attachment. |
| SiHFU9210-GE3 | Same IPAK package and pinout; Pb-free/halogen-free construction; identical VDS, RDS(on), Qg, and avalanche ratings | No functional difference; qualified to RoHS and JEDEC MSL-1 standards | Choose SiHFU9210-GE3 for new designs requiring lead-free compliance and extended moisture sensitivity level assurance. |
Compared with IRFU9210PBF, IRFR9210PBF offers identical performance in a surface-mount package for space-constrained layouts, while SiHFU9210-GE3 provides identical functionality with enhanced environmental compliance - both require no circuit redesign but differ in assembly process and regulatory qualification.
Availability
IRFU9210PBF is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC conversion, and battery protection applications requiring stable component supply, long-term lifecycle support, and traceable sourcing from Vishay-authorized channels.
Supply support for IRFU9210PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.
The IRFU9210PBF belongs to Vishay's high-voltage P-channel Power MOSFET family, engineered for robust high-side switching in industrial, automotive, and telecom power systems where avalanche tolerance and thermal stability are critical.
FAQ
What is the maximum continuous drain current for IRFU9210PBF at 100 °C case temperature?
The IRFU9210PBF supports -1.2 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the IPAK package; designers must ensure junction temperature remains ≤150 °C using appropriate heatsinking or PCB copper area, especially when operating near maximum power dissipation.
Does IRFU9210PBF have a built-in body diode, and what are its key recovery parameters?
Yes, the IRFU9210PBF integrates a body diode with VSD = -5.8 V at IS = -1.9 A and TJ = 25 °C. Its reverse recovery time trr is 110–220 ns, and reverse recovery charge Qrr is 0.56–1.1 μC under specified test conditions. These values enable predictable freewheeling behavior in hard-switched topologies without requiring external Schottky diodes.
Can IRFU9210PBF be driven directly by a 3.3 V microcontroller GPIO pin?
No - the IRFU9210PBF has a gate threshold voltage range of -2.0 to -4.0 V and requires -10 V for full enhancement (RDS(on) = 3.0 Ω). A 3.3 V GPIO cannot provide sufficient negative gate drive; a dedicated P-channel gate driver or level-shifter circuit is required to generate the necessary -10 V relative to source potential.
What is the thermal resistance from junction to ambient for IRFU9210PBF when mounted on a 1" square PCB?
When mounted on a 1" square FR-4 PCB, the IRFU9210PBF exhibits RthJA = 50 °C/W, as stated in the Thermal Resistance Ratings table. This value assumes standard board construction and defines the minimum copper pour area needed to maintain safe junction temperatures under continuous operation at rated current.
Is IRFU9210PBF suitable for avalanche energy handling in inductive load switching?
Yes - the IRFU9210PBF is explicitly rated for repetitive avalanche operation with IAR = -1.9 A and EAR = 2.5 mJ per pulse. Its single-pulse avalanche energy rating is 300 mJ. These capabilities allow safe operation during inductive turn-off events in relay drivers, solenoid controls, and motor H-bridge circuits without external protection components.
IRFU9210PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 170 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-251AA
IRFU9210PBF FAQ
1.How can I place an order for IRFU9210PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFU9210PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFU9210PBF reliable?
The price and inventory of IRFU9210PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU9210PBF is usually 5 days.
3.What payment methods are accepted for IRFU9210PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU9210PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFU9210PBF?
IRFU9210PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFU9210PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFU9210PBF?
For technical support, including IRFU9210PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU9210PBF requirements.
6.How does Aetrix verify that IRFU9210PBF is sourced from the original manufacturer or authorized distributors?
All IRFU9210PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU9210PBF meets industry standards.
7.What is the process for return or replacement of IRFU9210PBF?
All IRFU9210PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU9210PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFU9210PBF part is unused and in its original packaging.
Return procedure for IRFU9210PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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