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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFU9214PBF

Name: IRFU9214PBF
Brand: Vishay Siliconix
SKU: IRFU9214PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU9214PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU9214PBF.pdf

Description:: MOSFET P-CH 250V 2.7A TO251AA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFU9214PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in IPAK (TO-251) through-hole package, rated for -250 V drain-source voltage, 3.0 Ω R_DS(on) at V_GS = -10 V, and -2.7 A continuous drain current at T_C = 25 °C. It delivers fast switching, fully avalanche-rated ruggedness, and is optimized for high-voltage DC-DC converters and industrial motor control.

For engineers reviewing the IRFU9214PBF datasheet, IRFU9214PBF pinout, IRFU9214PBF application, or IRFU9214PBF equivalent, key selection considerations include its -250 V blocking capability, TO-251 thermal performance (R_thJC = 2.5 °C/W), gate charge profile (Q_g = 14 nC), and body diode recovery characteristics (t_rr = 150–220 ns).

Technical Context

This third-generation Vishay power MOSFET uses advanced silicon processing to achieve low on-resistance per die area while maintaining robust avalanche energy rating (E_AS = 100 mJ) and linear SOA operation up to 100 μs pulses. Its P-channel topology enables high-side switching without level-shifting circuitry in buck regulators and load switches.

The device features a fast intrinsic body diode with t_rr = 150–220 ns and Q_rr = 870–1300 nC, supporting synchronous rectification in flyback topologies. Gate drive requirements are defined by V_GS(th) = -2.0 to -4.0 V and total gate charge of 14 nC at -10 V, enabling compatibility with standard logic-level and microcontroller-driven gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-250 V - Supports high-voltage DC bus isolation in industrial power supplies and motor drives.
R_DS(on)	3.0 Ω @ V_GS = -10 V - Enables <1.5 W conduction loss at -1.7 A, suitable for thermally constrained PCB layouts.
I_D (cont.)	-2.7 A @ T_C = 25 °C - Delivers stable current handling with derating to -1.7 A at 100 °C case temperature.
Q_g	14 nC - Determines gate driver power requirement; compatible with low-current 5 V/3.3 V MCU outputs via appropriate R_g.
E_AS	100 mJ - Withstands unclamped inductive switching events without failure, critical for relay/snubberless designs.
t_rr	150–220 ns - Limits reverse recovery losses in hard-switched topologies; requires careful layout to minimize dV/dt-induced shoot-through.
R_thJC	2.5 °C/W - Enables direct heatsink mounting for >30 W power dissipation with minimal thermal interface resistance.

Pinout & Package

IRFU9214PBF uses the IPAK (TO-251) through-hole package with three terminals: Drain (D), Gate (G), and Source (S). The package features a large exposed drain tab for efficient heat transfer to PCB copper or external heatsink, and straight leads compatible with wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-voltage current path output	Exposed metal tab - electrically connected to drain; must be isolated from other potentials and thermally coupled to heatsink or ground plane.
Gate (G)	Control terminal for channel conduction	High-impedance input requiring <±100 nA leakage; sensitive to ESD; needs low-inductance gate resistor (R_g) for controlled turn-on/off.
Source (S)	Reference node for gate drive and current return	Common connection point for load return path; defines V_GS reference; must maintain low-impedance path to minimize switching noise coupling.

Key Features

Feature	Design Value
Fully avalanche rated	100 mJ single-pulse E_AS - Eliminates need for external snubbers in inductive load switching applications.
P-channel topology	V_GS(th) = -2.0 to -4.0 V - Enables simple high-side switch configuration without bootstrap or isolated gate drive.
Fast switching speed	t_d(on) = 11 ns, t_f = 17 ns - Reduces switching losses in PWM frequencies up to 200 kHz with proper gate drive design.
Low gate charge	Q_g = 14 nC - Minimizes driver power consumption and allows use of low-cost gate drivers in battery-powered systems.
Robust body diode	Q_rr = 870–1300 nC, t_rr = 150–220 ns - Supports freewheeling in flyback and half-bridge configurations with predictable recovery behavior.

Applications

Industrial Motor Control	High-Voltage DC-DC Converters
Use Scenario: Controlling brushed DC motors in factory automation equipment with 200–240 V DC bus. IC Role / Device Role / Timing Role: High-side P-channel switch enabling bidirectional current flow when paired with N-channel low-side devices. Use Value: -250 V V_DS rating ensures margin against bus transients; R_thJC = 2.5 °C/W supports heatsink-free operation at 1.5 A continuous load.	Use Scenario: Primary-side high-voltage switch in isolated flyback converters powering industrial sensors and PLC I/O modules. IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with unclamped inductive turn-off stress. Use Value: 100 mJ E_AS withstands worst-case no-load startup surges; t_rr < 220 ns limits cross-conduction risk during synchronous rectification.
Power Supply OR-ing Circuits	Overvoltage Protection Switches
Use Scenario: Redundant 48 V telecom power supply combining using back-to-back P-MOSFETs to prevent reverse current flow. IC Role / Device Role / Timing Role: Low-loss series pass element with body diode oriented to block reverse current while conducting forward. Use Value: R_DS(on) = 3.0 Ω ensures <1.2 W loss at 2 A; -250 V rating provides safety margin against line surges and hot-swap transients.	Use Scenario: Input protection stage in medical-grade AC/DC adapters where overvoltage must disconnect mains before downstream damage occurs. IC Role / Device Role / Timing Role: Fast-acting crowbar switch triggered by voltage supervisor IC to short input and blow fuse. Use Value: Fast turn-off (t_f = 17 ns) and high dV/dt immunity (-5.0 V/ns) ensure reliable triggering under fast-rising surge conditions.

Industrial Motor Control

High-Voltage DC-DC Converters

Use Scenario: Controlling brushed DC motors in factory automation equipment with 200–240 V DC bus.

IC Role / Device Role / Timing Role: High-side P-channel switch enabling bidirectional current flow when paired with N-channel low-side devices.

Use Value: -250 V V_DS rating ensures margin against bus transients; R_thJC = 2.5 °C/W supports heatsink-free operation at 1.5 A continuous load.

Use Scenario: Primary-side high-voltage switch in isolated flyback converters powering industrial sensors and PLC I/O modules.

IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with unclamped inductive turn-off stress.

Use Value: 100 mJ E_AS withstands worst-case no-load startup surges; t_rr < 220 ns limits cross-conduction risk during synchronous rectification.

Power Supply OR-ing Circuits

Overvoltage Protection Switches

Use Scenario: Redundant 48 V telecom power supply combining using back-to-back P-MOSFETs to prevent reverse current flow.

IC Role / Device Role / Timing Role: Low-loss series pass element with body diode oriented to block reverse current while conducting forward.

Use Value: R_DS(on) = 3.0 Ω ensures <1.2 W loss at 2 A; -250 V rating provides safety margin against line surges and hot-swap transients.

Use Scenario: Input protection stage in medical-grade AC/DC adapters where overvoltage must disconnect mains before downstream damage occurs.

IC Role / Device Role / Timing Role: Fast-acting crowbar switch triggered by voltage supervisor IC to short input and blow fuse.

Use Value: Fast turn-off (t_f = 17 ns) and high dV/dt immunity (-5.0 V/ns) ensure reliable triggering under fast-rising surge conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9214PbF	Same silicon die, DPAK (TO-252) surface-mount package; R_thJA = 50 °C/W (PCB mount) vs. 110 °C/W for IRFU9214PBF.	Preferred for automated SMT assembly; lower thermal resistance to PCB but higher junction-to-ambient than through-hole IPAK with heatsink.	Select IRFR9214PbF for space-constrained PCBs with adequate copper area; choose IRFU9214PBF for higher power density with discrete heatsinking.
SiHFU9214-GE3	Identical electrical specs and IPAK package; lead-free/halogen-free construction per JEDEC J-STD-609A Class 2a.	Required for RoHS-compliant production; same thermal and switching performance as IRFU9214PBF.	Use SiHFU9214-GE3 when environmental compliance mandates Pb-free/halogen-free materials; otherwise IRFU9214PBF remains functionally identical.

Compared with IRFR9214PbF, IRFU9214PBF offers superior thermal management via through-hole mounting and heatsink integration, while SiHFU9214-GE3 provides identical performance with updated environmental compliance-making IRFU9214PBF optimal for legacy designs prioritizing thermal headroom over RoHS certification.

Availability

IRFU9214PBF is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC converters, and overvoltage protection circuits requiring stable component supply across long-lifecycle embedded programs.

Supply support for IRFU9214PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and automotive environments.

The IRFU9214PBF belongs to Vishay's third-generation high-voltage P-channel power MOSFET family, engineered for ruggedized operation in high-transient industrial power systems and designed to replace older-generation devices with improved avalanche tolerance and thermal efficiency.

FAQ

What is the maximum continuous drain current for IRFU9214PBF at 100 °C case temperature?

The IRFU9214PBF supports -1.7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from -2.7 A at 25 °C reflects thermal limitations of the IPAK package and must be validated with actual board-level thermal measurements under operating conditions.

Does IRFU9214PBF have avalanche capability, and how is it rated?

Yes, the IRFU9214PBF is fully avalanche rated with a single-pulse avalanche energy (E_AS) of 100 mJ under test conditions of L = 27 mH, R_g = 25 Ω, and I_AS = -2.7 A. This rating is confirmed in the datasheet's Absolute Maximum Ratings section and enables reliable operation in inductive switching applications without external snubbers.

What is the gate threshold voltage range for IRFU9214PBF, and how does it affect drive requirements?

The IRFU9214PBF has a gate-source threshold voltage (V_GS(th)) range of -2.0 V to -4.0 V at I_D = -250 μA. This P-channel characteristic means full enhancement occurs at negative gate bias; a -10 V drive ensures low R_DS(on), while logic-level compatibility down to -5 V is possible with increased on-resistance.

Can IRFU9214PBF be used in surface-mount designs?

No - IRFU9214PBF is specifically configured for through-hole mounting in the IPAK (TO-251) package with straight leads. For surface-mount equivalents, consider the IRFR9214PbF in DPAK (TO-252) package, which shares identical electrical specifications but differs in mechanical form factor and thermal path.

What is the typical body diode reverse recovery time for IRFU9214PBF?

The IRFU9214PBF exhibits a body diode reverse recovery time (t_rr) of 150–220 ns under test conditions of T_J = 25 °C, I_F = -1.7 A, and dI/dt = 100 A/μs. This value is critical for minimizing switching losses and preventing shoot-through in synchronous rectifier and half-bridge configurations.

IRFU9214PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 220 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

IRFU9214PBF FAQ

1.How can I place an order for IRFU9214PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU9214PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU9214PBF reliable?

The price and inventory of IRFU9214PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU9214PBF is usually 5 days.

3.What payment methods are accepted for IRFU9214PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU9214PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU9214PBF?

IRFU9214PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU9214PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU9214PBF?

For technical support, including IRFU9214PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU9214PBF requirements.

6.How does Aetrix verify that IRFU9214PBF is sourced from the original manufacturer or authorized distributors?

All IRFU9214PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU9214PBF meets industry standards.

7.What is the process for return or replacement of IRFU9214PBF?

All IRFU9214PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU9214PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU9214PBF part is unused and in its original packaging.

Return procedure for IRFU9214PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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