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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFUC20

Name: IRFUC20
Brand: Vishay Siliconix
SKU: IRFUC20
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFUC20

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFUC20.pdf

Description:: MOSFET N-CH 600V 2A TO251AA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFUC20 from Vishay Siliconix is a 600 V, 2.0 A N-channel power MOSFET in straight-lead (through-hole) IPAK (TO-251) package, featuring 4.4 Ω R_DS(on) at V_GS = 10 V, 18 nC total gate charge, and repetitive avalanche rating up to 2.0 A - designed for offline switch-mode power supplies, AC-DC adapters, and industrial motor control interfaces.

For engineers reviewing the IRFUC20 datasheet, IRFUC20 pinout, IRFUC20 application, or IRFUC20 equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics, and through-hole mounting guidance specific to the IRFUC20 variant - not the surface-mount IRFRC20.

Technical Context

The IRFUC20 implements a third-generation silicon process optimized for high-voltage switching with ruggedized avalanche capability. Its 600 V V_DS rating and 74 mJ single-pulse avalanche energy support unclamped inductive load handling in flyback and forward converters.

It features a fast-switching profile (10 ns turn-on delay, 25 ns fall time), low Q_gd/Q_g ratio (8.9/18 nC), and peak dV/dt immunity of 3.0 V/ns - enabling stable operation in high-noise, high-dV/dt environments like mains-connected power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports direct rectified AC line input (e.g., 400 V DC bus) without cascading devices
R_DS(on)	4.4 Ω @ V_GS = 10 V - enables <2 W conduction loss at 1.2 A continuous drain current
I_D (continuous)	2.0 A @ T_C = 25 °C - defines maximum steady-state current with heatsink at case temperature
Q_g	18 nC - determines gate driver power requirement and switching speed under 10 V drive
E_AS	74 mJ - allows safe energy absorption during inductive turn-off transients without external snubbers
V_SD	1.6 V @ I_S = 2.0 A - body diode forward voltage impacts synchronous rectification efficiency and reverse recovery losses
R_thJC	3.0 °C/W - junction-to-case thermal resistance enables precise heatsink sizing for 42 W P_D dissipation

Pinout & Package

IRFUC20 uses the IPAK (TO-251) straight-lead through-hole package with gull-wing leads and exposed drain pad on the bottom surface. Mounting requires vertical PCB insertion and wave soldering; thermal performance depends on copper area under the drain tab.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 3.0 nC Q_gs enables fast turn-on with low gate resistance
D (Drain)	High-side power output	Connected to high-voltage rail; electrically tied to exposed metal tab for thermal conduction
S (Source)	Power return reference	Common node for gate drive return and current sensing; referenced to system ground in low-side switch configuration

Key Features

Feature	Design Value
Repetitive avalanche rated	2.0 A I_AR, 4.2 mJ E_AR - eliminates need for external clamping in overcurrent fault conditions
Dynamic dV/dt rating	3.0 V/ns - prevents false turn-on during fast voltage transients in high-side switching topologies
Through-hole (straight lead)	IPAK (TO-251) package - provides mechanical robustness and higher vibration tolerance than surface-mount alternatives
Fast switching	10 ns t_d(on), 25 ns t_f - reduces switching losses in 50–100 kHz SMPS designs
Body diode trr	290–580 ns - enables use in freewheeling paths where reverse recovery must be managed

Applications

AC-DC Adapter Primary Switch	Flyback Converter Main Switch
Use Scenario: 36 W offline adapter converting 85–265 V AC to 12 V DC using discontinuous conduction mode (DCM) flyback topology. IC Role / Device Role / Timing Role: High-side primary-side switch controlling energy transfer into transformer during gate-driven ON period. Use Value: 600 V V_DS withstands reflected output voltage plus leakage spike; 4.4 Ω R_DS(on) limits conduction loss at 1.2 A peak current.	Use Scenario: Isolated 24 V/2 A industrial power supply with universal input and reinforced insulation. IC Role / Device Role / Timing Role: Primary-side power switch operating at 65 kHz with zero-voltage switching assistance. Use Value: Repetitive avalanche rating absorbs leakage inductance energy during demagnetization; 18 nC Q_g ensures clean gate drive with standard 1 A peak drivers.
Motor Control Interface	Industrial Relay Driver
Use Scenario: 24 V DC brushed motor H-bridge half-bridge stage driving 1.5 A stall current loads. IC Role / Device Role / Timing Role: Low-side switching element commutating motor current with PWM duty cycle control. Use Value: 2.0 A continuous rating handles motor surge; 1.6 V V_SD minimizes body diode conduction loss during dead-time freewheeling.	Use Scenario: Solid-state replacement for electromechanical relays in PLC output modules switching 120 V AC loads. IC Role / Device Role / Timing Role: High-voltage interface switch isolating control logic from AC mains via optocoupler-driven gate. Use Value: 74 mJ E_AS safely clamps inductive kickback from relay coils; straight-lead IPAK ensures long-term mechanical reliability under thermal cycling.

AC-DC Adapter Primary Switch

Flyback Converter Main Switch

Use Scenario: 36 W offline adapter converting 85–265 V AC to 12 V DC using discontinuous conduction mode (DCM) flyback topology.

IC Role / Device Role / Timing Role: High-side primary-side switch controlling energy transfer into transformer during gate-driven ON period.

Use Value: 600 V V_DS withstands reflected output voltage plus leakage spike; 4.4 Ω R_DS(on) limits conduction loss at 1.2 A peak current.

Use Scenario: Isolated 24 V/2 A industrial power supply with universal input and reinforced insulation.

IC Role / Device Role / Timing Role: Primary-side power switch operating at 65 kHz with zero-voltage switching assistance.

Use Value: Repetitive avalanche rating absorbs leakage inductance energy during demagnetization; 18 nC Q_g ensures clean gate drive with standard 1 A peak drivers.

Motor Control Interface

Industrial Relay Driver

Use Scenario: 24 V DC brushed motor H-bridge half-bridge stage driving 1.5 A stall current loads.

IC Role / Device Role / Timing Role: Low-side switching element commutating motor current with PWM duty cycle control.

Use Value: 2.0 A continuous rating handles motor surge; 1.6 V V_SD minimizes body diode conduction loss during dead-time freewheeling.

Use Scenario: Solid-state replacement for electromechanical relays in PLC output modules switching 120 V AC loads.

IC Role / Device Role / Timing Role: High-voltage interface switch isolating control logic from AC mains via optocoupler-driven gate.

Use Value: 74 mJ E_AS safely clamps inductive kickback from relay coils; straight-lead IPAK ensures long-term mechanical reliability under thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFRC20	Same die, DPAK (TO-252) surface-mount package; 42 W P_D at T_C = 25 °C vs. 2.5 W at T_A = 25 °C for IRFUC20	Requires reflow-compatible PCB layout; unsuitable for through-hole assembly or high-vibration environments	Select IRFRC20 only when automated SMT production and board space constraints favor surface-mount mounting.
STP6NK60Z	600 V, 6 A, 1.2 Ω R_DS(on), SuperFET II technology; higher current, lower R_DS(on), but 45 nC Q_g and no specified avalanche rating	Better for higher-power (>50 W) applications; lacks documented repetitive avalanche capability for unclamped inductive loads	Choose STP6NK60Z when higher current and lower conduction loss are critical, and external clamping is acceptable.

Compared with IRFUC20, IRFRC20 offers identical electrical performance in a surface-mount package ideal for compact layouts but sacrifices mechanical robustness and through-hole compatibility; STP6NK60Z delivers superior current handling and lower on-resistance but lacks the IRFUC20's validated repetitive avalanche endurance - making IRFUC20 uniquely suited for cost-sensitive, vibration-prone, or unclamped inductive applications requiring proven ruggedness.

Availability

IRFUC20 is available at Aetrix Electronics and suitable for offline AC-DC adapters, flyback converters, and industrial relay drivers requiring stable component supply across extended production lifecycles.

Supply support for IRFUC20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFUC20 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for rugged, cost-effective switching in offline power conversion and industrial control systems where through-hole mounting and avalanche tolerance are essential.

FAQ

What is the maximum continuous drain current for IRFUC20 at 100 °C case temperature?

The IRFUC20 supports 1.3 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the IPAK (TO-251) package under sustained power dissipation. At 25 °C case temperature, the rating rises to 2.0 A. Designers must size heatsinks or PCB copper accordingly to maintain T_C ≤ 100 °C for reliable 1.3 A operation. The IRFUC20 datasheet specifies linear derating factor of 0.33 W/°C above 25 °C.

Does IRFUC20 have a specified body diode reverse recovery time (t_rr)?

Yes, the IRFUC20 datasheet specifies t_rr = 290–580 ns at T_J = 25 °C, I_F = 2.0 A, and dI/dt = 100 A/μs. This parameter is critical for estimating switching losses in freewheeling paths and designing snubber networks. The wide range reflects process variation and test condition sensitivity. The IRFUC20's body diode also has Q_rr = 0.67–1.3 μC, directly influencing recovery-related losses in hard-switched topologies.

Is IRFUC20 pin-compatible with IRFRC20?

No, IRFUC20 is not pin-compatible with IRFRC20. Although both share identical die and electrical specifications, IRFUC20 uses the IPAK (TO-251) straight-lead through-hole package, while IRFRC20 uses the DPAK (TO-252) surface-mount package. Their lead configurations, footprints, and mounting methods differ fundamentally - IRFUC20 requires vertical PCB insertion and wave soldering, whereas IRFRC20 is reflow-soldered. Substituting one for the other demands full PCB redesign.

What is the gate-source threshold voltage (V_GS(th)) range for IRFUC20?

The IRFUC20 has a gate-source threshold voltage range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This means the device begins conducting significantly between 2.0 V and 4.0 V, confirming it is a standard-threshold MOSFET requiring ≥10 V gate drive for full enhancement. Logic-level variants (e.g., IRFUC20L) would specify lower thresholds; the IRFUC20 is not logic-level compatible without level-shifting circuitry.

Can IRFUC20 be used in avalanche mode repeatedly without degradation?

Yes, the IRFUC20 is explicitly rated for repetitive avalanche operation: I_AR = 2.0 A and E_AR = 4.2 mJ, with pulse width limited by maximum junction temperature. This capability is validated per Figure 11 in the datasheet and enables reliable operation in circuits with unclamped inductive loads - such as relay drivers or transformer-coupled gate drives - without external avalanche clamps. However, each avalanche event must remain within the specified energy limit and thermal boundaries to avoid cumulative degradation of the IRFUC20.

IRFUC20 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.4Ohm @ 1.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

IRFUC20 FAQ

1.How can I place an order for IRFUC20 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFUC20 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFUC20 reliable?

The price and inventory of IRFUC20 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFUC20 is usually 5 days.

3.What payment methods are accepted for IRFUC20?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFUC20 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFUC20?

IRFUC20 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFUC20 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFUC20?

For technical support, including IRFUC20 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFUC20 requirements.

6.How does Aetrix verify that IRFUC20 is sourced from the original manufacturer or authorized distributors?

All IRFUC20 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFUC20 meets industry standards.

7.What is the process for return or replacement of IRFUC20?

All IRFUC20 units undergo pre-shipment inspection (PSI). If there is an issue with IRFUC20, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFUC20 part is unused and in its original packaging.

Return procedure for IRFUC20:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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