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Vishay Siliconix IRFUC20PBF
- Part No.:
- IRFUC20PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IRFUC20PBF.pdf
- Description:
- MOSFET N-CH 600V 2A TO251AA
- Quantity:
- Payment:
- Shipping:
Inventory:2,925
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Product details
Overview
IRFUC20PBF from Vishay Siliconix is a 600 V, 2.0 A N-channel power MOSFET in IPAK (TO-251) through-hole package, featuring 4.4 Ω RDS(on) at VGS = 10 V, 18 nC total gate charge, and repetitive avalanche rating up to 2.0 A - designed for high-voltage DC-DC converters and offline switch-mode power supplies.
For engineers reviewing the IRFUC20PBF datasheet, IRFUC20PBF pinout, IRFUC20PBF application, or IRFUC20PBF equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery performance (trr = 290–580 ns), and real-world mounting guidance for PCB-level thermal management.
Technical Context
This third-generation high-voltage MOSFET uses planar stripe DMOS technology with optimized cell layout for ruggedness and fast switching. Its 600 V VDS rating supports universal-input AC-DC front-ends, while the 3.0 V/ns peak diode recovery dV/dt capability ensures stable operation under high di/dt commutation.
The device integrates a low-Qgd/Qg ratio (8.9/18 nC) for reduced Miller-induced turn-off delay, and its 1.6 V body diode forward voltage (at IS = 2.0 A, TJ = 25 °C) enables efficient synchronous rectification in flyback and resonant topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 400 V DC bus with 50 % margin for surge and ringing in offline SMPS |
| RDS(on) | 4.4 Ω @ VGS = 10 V - determines conduction loss in 2.0 A continuous drain applications |
| Qg | 18 nC - defines gate drive energy requirement and switching speed with 18 Ω external resistor |
| EAS | 74 mJ - enables unclamped inductive switching without snubber in low-duty-cycle flyback designs |
| trr | 290–580 ns - impacts reverse recovery loss and EMI in hard-switched converters |
| RthJC | 3.0 °C/W - allows direct heatsink mounting for >2 W continuous dissipation at TC = 100 °C |
| ID (TC = 100 °C) | 1.3 A - sets practical current limit for through-hole mounted IRFUC20PBF on FR-4 PCB |
Pinout & Package
IRFUC20PBF uses the IPAK (TO-251) through-hole package with three terminals: Gate (G), Drain (D), and Source (S). The drain tab is internally connected to the die backside and serves as primary thermal path; leads are straight (non-gull-wing) for axial insertion and wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Accepts 10 V logic-level drive; threshold VGS(th) = 2.0–4.0 V enables compatibility with standard PWM controllers |
| D | High-side drain connection | Internally bonded to metal tab; must be electrically isolated from heatsink unless referenced to system ground |
| S | Source return node | Common reference for gate drive and current sensing; connects to PCB ground plane for low-inductance return path |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 2.0 A IAR, 4.2 mJ EAR - eliminates need for external clamping in transient-overload conditions |
| Dynamic dV/dt rating | 3.0 V/ns - prevents false turn-on during high dv/dt switching transitions in bridge configurations |
| Fast switching | td(on) = 10 ns, tr = 23 ns - reduces switching losses in 100–500 kHz SMPS designs |
| Through-hole mounting | IPAK (TO-251) straight leads - provides mechanical robustness and higher vibration tolerance vs. surface-mount alternatives |
| Low Qgd/Qg ratio | 8.9/18 nC = 49 % - improves controllability during Miller plateau and reduces risk of shoot-through |
Applications
| AC-DC Adapter | Industrial Motor Drive |
|---|---|
Use Scenario: 36 W universal-input offline flyback converter powering USB-C PD accessories. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 65 kHz with discontinuous conduction mode (DCM). Use Value: 600 V VDS withstands 385 V DC link plus 100 V ringing; 2.0 A ID supports peak currents up to 8.0 A (IDM) during startup. |
Use Scenario: Low-power brushless DC motor controller for HVAC blowers with integrated overcurrent protection. IC Role / Device Role / Timing Role: High-side switch in half-bridge output stage, driven by isolated gate driver with 18 Ω series resistor. Use Value: Repetitive avalanche rating handles inductive kickback during rapid PWM shutdown; 3.0 V/ns dV/dt immunity prevents spurious turn-on during bus transients. |
| LED Driver | Power Factor Correction |
Use Scenario: Constant-current buck-boost LED driver for street lighting with 100–277 V AC input. IC Role / Device Role / Timing Role: Main switching element in active PFC + DC-DC cascade, switching at 100 kHz. Use Value: 4.4 Ω RDS(on) limits conduction loss at 1.3 A continuous drain (TC = 100 °C); 1.6 V VSD minimizes body diode conduction loss during dead-time. |
Use Scenario: Critical-conduction-mode (CrM) boost PFC stage in 150 W server PSU. IC Role / Device Role / Timing Role: Boost switch handling 2.0 A average input current with peak currents exceeding 6 A. Use Value: 74 mJ single-pulse avalanche energy absorbs line surges without failure; trr < 580 ns ensures clean zero-current switching transition. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFRC20PBF | Same silicon die, DPAK (TO-252) surface-mount package; RthJA = 110 °C/W (vs. 50 °C/W for IRFUC20PBF on PCB mount) | Requires reflow-compatible layout; better suited for automated assembly but lower thermal performance without heatsink | Select when board space is constrained and thermal load ≤ 1.5 W; avoid for >1.3 A continuous current without copper pour |
| STP6NK60ZFP | Zener-protected gate; 600 V/1.8 A; lower RDS(on) = 3.5 Ω but higher Qg = 22 nC; TO-220FP package | Higher gate drive power needed; Zener clamp adds robustness against gate oxide damage in noisy environments | Prefer where gate drive noise immunity is critical and thermal design accommodates TO-220FP footprint |
Compared with IRFUC20PBF, IRFRC20PBF trades thermal performance for SMT manufacturability, while STP6NK60ZFP offers enhanced gate protection at the cost of slower switching and larger footprint - making IRFUC20PBF optimal for cost-sensitive, medium-power through-hole designs requiring rugged avalanche behavior.
Availability
IRFUC20PBF is available at Aetrix Electronics and suitable for AC-DC adapters, industrial motor drives, and LED drivers requiring stable component supply across extended production lifecycles.
Supply support for IRFUC20PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFUC20PBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedness, fast switching, and cost-effective implementation in offline power conversion systems.
FAQ
What is the maximum continuous drain current for IRFUC20PBF at 100 °C case temperature?
The IRFUC20PBF supports 1.3 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects linear derating from 2.0 A at 25 °C using the 0.33 W/°C factor. Designers must ensure PCB copper area and airflow maintain case temperature below 100 °C to sustain this current without exceeding junction temperature limits.
Does IRFUC20PBF have avalanche capability, and how is it rated?
Yes, IRFUC20PBF is repetitively avalanche rated: IAR = 2.0 A and EAR = 4.2 mJ under defined pulse conditions (pulse width limited by max junction temperature). It also supports single-pulse avalanche energy of 74 mJ (EAS) at IAS = 2.0 A. These ratings are validated per JEDEC test methods and enable reliable operation in inductive switching circuits without external snubbers.
What is the gate threshold voltage range for IRFUC20PBF, and how does it affect drive requirements?
The gate-source threshold voltage VGS(th) for IRFUC20PBF is 2.0–4.0 V at VDS = VGS and ID = 250 μA. This range confirms compatibility with standard 10 V gate drivers, ensuring full enhancement above 4.0 V. Logic-level variants are not offered in this family - a 10 V drive is required to achieve the specified 4.4 Ω RDS(on).
How does the body diode performance of IRFUC20PBF impact its use in synchronous rectification?
The IRFUC20PBF body diode has VSD = 1.6 V at IS = 2.0 A and TJ = 25 °C, with trr = 290–580 ns and Qrr = 0.67–1.3 μC. While not optimized for ultra-fast recovery, this performance is acceptable in low-frequency flyback or forward converters where synchronous FET timing can accommodate the recovery window. For high-frequency designs (>300 kHz), dedicated low-Qrr MOSFETs are recommended.
What thermal resistance values apply to IRFUC20PBF in typical PCB mounting?
In standard 1" square FR-4 PCB mounting (per note "e"), IRFUC20PBF has RthJA = 50 °C/W and RthJC = 3.0 °C/W. The low junction-to-case resistance enables effective heatsinking via the drain tab, while the 50 °C/W ambient rating supports ~2.5 W dissipation at TA = 25 °C before reaching TJ = 150 °C. Layout must include ≥10 cm² copper pour under the tab for rated performance.
IRFUC20PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.4Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-251AA
IRFUC20PBF FAQ
1.How can I place an order for IRFUC20PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFUC20PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFUC20PBF reliable?
The price and inventory of IRFUC20PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFUC20PBF is usually 5 days.
3.What payment methods are accepted for IRFUC20PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFUC20PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFUC20PBF?
IRFUC20PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFUC20PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFUC20PBF?
For technical support, including IRFUC20PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFUC20PBF requirements.
6.How does Aetrix verify that IRFUC20PBF is sourced from the original manufacturer or authorized distributors?
All IRFUC20PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFUC20PBF meets industry standards.
7.What is the process for return or replacement of IRFUC20PBF?
All IRFUC20PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFUC20PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFUC20PBF part is unused and in its original packaging.
Return procedure for IRFUC20PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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