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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFZ10

Name: IRFZ10
Brand: Vishay Siliconix
SKU: IRFZ10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ10

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFZ10.pdf

Description:: MOSFET N-CH 60V 10A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFZ10 from Vishay Siliconix is a 60 V, 10 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.20 Ω R_DS(on) at V_GS = 10 V, 11 nC total gate charge, and 175 °C maximum junction temperature-designed for DC-DC converters, motor control, and industrial switching applications.

For engineers reviewing the IRFZ10 datasheet, IRFZ10 pinout, IRFZ10 application, or IRFZ10 equivalent, key selection criteria include its unclamped avalanche energy rating (47 mJ), fast switching performance (10 ns turn-on delay, 19 ns fall time), rugged dV/dt capability (4.5 V/ns), and RoHS-compliant lead-free variant IRFZ10PbF.

Technical Context

The IRFZ10 operates as a voltage-controlled unidirectional switch with gate-driven channel conduction, optimized for hard-switched topologies requiring low conduction loss and robust transient handling. Its dynamic dV/dt rating and integral body diode support inductive load commutation without external snubbing in many cases.

Thermal design leverages the TO-220AB package's 3.5 °C/W junction-to-case resistance and flat-mounting interface (0.50 °C/W case-to-sink), enabling stable operation up to 7.2 A continuous drain current at 100 °C case temperature under natural convection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before avalanche; suitable for 48 V bus systems with margin
R_DS(on)	0.20 Ω @ V_GS = 10 V - Enables ≤1.2 W conduction loss at 6 A DC load
Q_g	11 nC - Determines gate drive power and switching speed with standard 24 Ω driver
E_AS	47 mJ - Supports single-pulse inductive energy absorption without failure
T_J(max)	+175 °C - Allows high-temperature ambient operation with derated current
dV/dt	4.5 V/ns - Resists false turn-on during fast voltage transients across drain-source
I_D (T_C=100°C)	7.2 A - Continuous safe operating current with heatsink at elevated case temperature

Pinout & Package

Package: TO-220AB - Through-hole, single-ended, isolated tab (drain-connected), rated for ≤50 W power dissipation with standard heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Voltage-controlled input; requires ≥2.0 V threshold, ≤±20 V absolute max; low 3.1 nC Q_gs eases drive
D (Drain)	High-side current path	Connected to package tab; electrically tied to heat sink; carries full load current and avalanche energy
S (Source)	Reference node	Common return for gate drive and load; internal source inductance (7.5 nH) affects diode recovery behavior

Key Features

Feature	Design Value
Dynamic dV/dt rating	4.5 V/ns - Prevents spurious turn-on during fast voltage transitions in inductive switching
Fast switching	10 ns t_d(on), 19 ns t_f - Reduces switching losses in PWM frequencies up to 100 kHz
Ease of paralleling	Positive R_DS(on) temperature coefficient - Ensures current sharing stability across multiple devices
Simple drive requirements	10 V logic-level gate drive - Compatible with standard microcontroller GPIO or dedicated gate drivers
Ruggedized device design	47 mJ E_AS, 175 °C T_J - Withstands repetitive unclamped inductive switching stress in industrial environments

Applications

DC-DC Buck Converter	Brushed DC Motor Driver
Use Scenario: Step-down regulation from 48 V input to 12 V/5 V output in telecom power supplies. IC Role / Device Role: High-side synchronous rectifier switch controlling duty-cycle-dependent energy transfer. Use Value: 0.20 Ω R_DS(on) minimizes conduction loss at 6–10 A loads; 11 nC Q_g enables efficient 200 kHz switching with low gate drive loss.	Use Scenario: H-bridge half-bridge leg driving 24 V, 5 A brushed motors in factory automation actuators. IC Role / Device Role: Low-side switching element handling bidirectional current and reverse EMF during direction reversal. Use Value: Integral body diode with 70–140 ns t_rr and 0.40 μC Q_rr supports freewheeling with controlled recovery; 4.5 V/ns dV/dt prevents shoot-through.
Industrial Lighting Ballast	AC-DC PFC Pre-regulator
Use Scenario: High-frequency resonant ballast for HID lamps in warehouse lighting systems. IC Role / Device Role: Main switching transistor in half-bridge topology operating at 50–100 kHz. Use Value: 175 °C T_J(max) ensures reliability under sealed fixture thermal conditions; 3.5 °C/W R_thJC simplifies heatsink sizing.	Use Scenario: Boost switch in active PFC stage for 85–265 V AC input, 300 W output industrial SMPS. IC Role / Device Role: Unidirectional power switch conducting during boost phase, blocking during flyback. Use Value: 60 V V_DS provides margin above 400 V DC bus; 47 mJ E_AS absorbs line surge-induced avalanche stress.

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down regulation from 48 V input to 12 V/5 V output in telecom power supplies.

IC Role / Device Role: High-side synchronous rectifier switch controlling duty-cycle-dependent energy transfer.

Use Value: 0.20 Ω R_DS(on) minimizes conduction loss at 6–10 A loads; 11 nC Q_g enables efficient 200 kHz switching with low gate drive loss.

Use Scenario: H-bridge half-bridge leg driving 24 V, 5 A brushed motors in factory automation actuators.

IC Role / Device Role: Low-side switching element handling bidirectional current and reverse EMF during direction reversal.

Use Value: Integral body diode with 70–140 ns t_rr and 0.40 μC Q_rr supports freewheeling with controlled recovery; 4.5 V/ns dV/dt prevents shoot-through.

Industrial Lighting Ballast

AC-DC PFC Pre-regulator

Use Scenario: High-frequency resonant ballast for HID lamps in warehouse lighting systems.

IC Role / Device Role: Main switching transistor in half-bridge topology operating at 50–100 kHz.

Use Value: 175 °C T_J(max) ensures reliability under sealed fixture thermal conditions; 3.5 °C/W R_thJC simplifies heatsink sizing.

Use Scenario: Boost switch in active PFC stage for 85–265 V AC input, 300 W output industrial SMPS.

IC Role / Device Role: Unidirectional power switch conducting during boost phase, blocking during flyback.

Use Value: 60 V V_DS provides margin above 400 V DC bus; 47 mJ E_AS absorbs line surge-induced avalanche stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	60 V, 60 A, R_DS(on) = 0.018 Ω, Q_g = 95 nC, TO-220	Higher current rating but significantly higher gate charge; requires stronger driver	Prefer when >10 A continuous current needed and gate drive capability supports 95 nC
IRFZ24N	55 V, 17 A, R_DS(on) = 0.07 Ω, Q_g = 27 nC, TO-220AB	Lower V_DS, lower R_DS(on), higher Q_g; same package footprint	Choose for 24 V systems needing lower on-resistance where 55 V rating suffices

Compared with STP60NF06 and IRFZ24N, the IRFZ10 offers balanced trade-offs: moderate current (10 A), low gate charge (11 nC), and proven ruggedness for 48 V industrial switching-making it optimal where driver strength, thermal margin, and avalanche tolerance outweigh raw current density.

Availability

IRFZ10 is available at Aetrix Electronics and suitable for DC-DC converters, brushed DC motor drivers, and industrial lighting ballasts requiring stable component supply and long-term manufacturability.

Supply support for IRFZ10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRFZ10 belongs to Vishay's third-generation power MOSFET family, engineered for cost-effective, high-reliability switching in commercial and industrial power conversion-prioritizing dynamic ruggedness, ease of use, and thermal stability over ultra-low R_DS(on).

FAQ

What is the maximum continuous drain current for IRFZ10 at 100 °C case temperature?

The IRFZ10 supports 7.2 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This value reflects linear derating from 10 A at 25 °C using the 0.29 W/°C factor. Designers must ensure heatsink thermal resistance keeps case temperature ≤100 °C under worst-case load and ambient conditions to maintain this current rating. The IRFZ10's 3.5 °C/W R_thJC enables predictable thermal modeling for such designs.

Does IRFZ10 have a built-in body diode, and what are its key recovery parameters?

Yes, the IRFZ10 integrates a parasitic body diode inherent to its N-channel MOSFET structure. Key recovery specs include reverse recovery time (t_rr) of 70–140 ns and reverse recovery charge (Q_rr) of 0.20–0.40 μC at T_J = 25 °C, I_F = 10 A, and di/dt = 100 A/μs. These values impact efficiency and EMI in freewheeling paths; the IRFZ10's moderate Q_rr makes it suitable for non-synchronous buck or half-bridge topologies where external Schottky diodes aren't required.

Is IRFZ10 compatible with 5 V logic-level gate drive?

No, the IRFZ10 is not a logic-level MOSFET. Its gate-source threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, but full enhancement requires V_GS = 10 V to achieve the specified 0.20 Ω R_DS(on). At 5 V, R_DS(on) increases significantly-typically >0.5 Ω-leading to excessive conduction loss. For 5 V drive, consider logic-level alternatives like IRLZ series. The IRFZ10 must be driven with ≥10 V to perform as specified in its datasheet.

What is the unclamped inductive switching (UIS) capability of IRFZ10?

The IRFZ10 is rated for 47 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = 25 V, starting T_J = 25 °C, L = 1.8 mH, R_g = 25 Ω, and I_AS = 7.2 A. This UIS rating confirms its ability to absorb inductive energy safely during switching events without destruction, a critical feature for relay drivers, solenoid controls, and motor phase switching where back-EMF is unclamped. Repetitive UIS requires thermal management verification.

How does the IRFZ10PbF variant differ from the base IRFZ10 part number?

The IRFZ10PbF is the lead-free (RoHS-compliant) version of the IRFZ10, identical in electrical and thermal specifications, packaging (TO-220AB), and pinout. The "PbF" suffix denotes termination finish free of lead per EU RoHS Directive 2011/65/EU. Both share the same Vishay document number 90363 and revision history. No derating or layout changes are needed when substituting IRFZ10PbF for legacy IRFZ10 in new designs or manufacturing transitions.

IRFZ10 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFZ10 FAQ

1.How can I place an order for IRFZ10 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ10 reliable?

The price and inventory of IRFZ10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ10 is usually 5 days.

3.What payment methods are accepted for IRFZ10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ10?

IRFZ10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ10?

For technical support, including IRFZ10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ10 requirements.

6.How does Aetrix verify that IRFZ10 is sourced from the original manufacturer or authorized distributors?

All IRFZ10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ10 meets industry standards.

7.What is the process for return or replacement of IRFZ10?

All IRFZ10 units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ10 part is unused and in its original packaging.

Return procedure for IRFZ10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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