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Vishay Siliconix IRFZ10PBF
- Part No.:
- IRFZ10PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFZ10PBF.pdf
- Description:
- MOSFET N-CH 60V 10A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,793
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Product details
Overview
IRFZ10PBF from Vishay Siliconix is a 60 V, 10 A N-channel enhancement-mode power MOSFET in TO-220AB package, optimized for medium-power switching applications including DC-DC converters and motor control. It delivers 0.20 Ω RDS(on) at VGS = 10 V, 11 nC total gate charge, and supports 175 °C junction operation with dynamic dV/dt rating up to 4.5 V/ns.
For engineers reviewing the IRFZ10PBF datasheet, IRFZ10PBF pinout, IRFZ10PBF application, or IRFZ10PBF equivalent, key selection criteria include its 43 W power dissipation at TC = 25 °C, unclamped avalanche energy of 47 mJ, fast switching (td(on) = 10 ns, tf = 19 ns), and ease of paralleling due to positive temperature coefficient of RDS(on).
Technical Context
The IRFZ10PBF employs third-generation planar vertical DMOS technology, enabling low conduction loss and robust avalanche capability. Its gate threshold voltage (2.0–4.0 V) ensures compatibility with standard 5 V and 10 V logic-level drivers, while the integrated body diode exhibits 70–140 ns reverse recovery time and 0.20–0.40 μC Qrr under defined test conditions.
Thermal design is supported by RthJC = 3.5 °C/W (junction-to-case) and RthJA ≤ 62 °C/W (junction-to-ambient). The device operates across –55 to +175 °C, with linear derating starting above 25 °C at 0.29 W/°C - critical for high-temperature industrial and automotive auxiliary systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - maximum blocking voltage for 48 V bus and 24 V industrial systems |
| RDS(on) @ VGS = 10 V | 0.20 Ω - enables <1.2 W conduction loss at 7.2 A continuous current |
| Qg | 11 nC - determines gate drive power and switching speed in hard-switched topologies |
| EAS | 47 mJ - supports reliable unclamped inductive switching without external snubbers |
| TJ max | +175 °C - allows operation in sealed enclosures or high-ambient environments |
| dV/dt rating | 4.5 V/ns - mitigates false turn-on in high-noise motor drive and SMPS layouts |
| ID @ TC = 100 °C | 7.2 A - defines real-world thermal-limited current in heatsink-constrained designs |
Pinout & Package
IRFZ10PBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (RthJC = 3.5 °C/W) and mechanical compatibility with universal mounting hardware (6-32 or M3 screw, 1.1 N·m torque).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat sink interface | Electrically connected to metal tab; requires insulating washer if mounted to grounded heatsink |
| Gate | Control terminal for channel formation | High-impedance input requiring <100 nA leakage; sensitive to ESD but simple to drive with 10 V logic |
| Source | Reference node for gate drive and current return | Common connection point for load return, driver ground, and sense resistor placement |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 4.5 V/ns - prevents spurious turn-on during fast voltage transients in half-bridge configurations |
| 175 °C operating temperature | Enables use in sealed industrial drives and automotive under-hood auxiliary circuits without derating penalties |
| Fast switching (tf = 19 ns) | Reduces switching losses in 100–500 kHz DC-DC converters and PWM motor controllers |
| Ease of paralleling | Positive RDS(on) temperature coefficient ensures current sharing stability across multiple devices |
| Simple drive requirements | Threshold voltage range (2.0–4.0 V) supports direct interface with microcontrollers and gate drivers without level-shifting |
Applications
| Brushless DC Motor Control | DC-DC Buck Converter |
|---|---|
Use Scenario: Low-voltage (<48 V) BLDC inverters for fans, pumps, and power tools. IC Role / Device Role / Timing Role: High-side/low-side switching element in 3-phase bridge, handling 7–10 A RMS phase current. Use Value: 0.20 Ω RDS(on) minimizes I²R losses at rated load; 47 mJ EAS absorbs inductive kickback during commutation. |
Use Scenario: Step-down regulator for FPGA core voltage or industrial sensor supply rails. IC Role / Device Role / Timing Role: Synchronous rectifier or main switch operating at 200–300 kHz with 10 A peak current. Use Value: 11 nC Qg enables efficient gate driving with low-power drivers; 19 ns fall time reduces dead-time losses. |
| Industrial Solid-State Relay | LED Constant-Current Driver |
Use Scenario: Replacement for electromechanical relays in PLC output modules and HVAC controls. IC Role / Device Role / Timing Role: Load switch controlling resistive or inductive loads up to 43 W at 25 °C case temperature. Use Value: 175 °C TJ rating ensures reliability in enclosed cabinets; TO-220AB mountability simplifies retrofit into legacy relay footprints. |
Use Scenario: Dimmable constant-current driver for high-brightness LED arrays in signage and lighting fixtures. IC Role / Device Role / Timing Role: PWM-controlled current sink regulating 1–10 A through series-connected LEDs. Use Value: Fast 10 ns turn-on delay and 50 ns rise time support precise dimming resolution; body diode handles freewheeling current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60NF06 | RDS(on) = 0.018 Ω (lower), Qg = 80 nC (higher), VDS = 60 V, TO-220 package | Better conduction efficiency but higher gate drive demand; less suitable for high-frequency switching | Prefer when minimizing conduction loss dominates over switching loss and gate drive capability is ample |
| IRFZ24NPBF | RDS(on) = 0.072 Ω (lower), ID = 17 A, Qg = 21 nC, same TO-220AB package | Higher current rating and lower on-resistance, but larger gate charge increases switching loss at >100 kHz | Choose when upgrading current capacity is required and layout allows for increased gate drive strength |
Compared with STP60NF06 and IRFZ24NPBF, the IRFZ10PBF offers balanced trade-offs: moderate RDS(on) and Qg make it optimal for 50–300 kHz switching where both conduction and switching losses matter, while its proven avalanche ruggedness suits inductive load switching without added protection circuitry.
Availability
IRFZ10PBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, and solid-state relay replacement requiring stable component supply and long-term lifecycle support.
Supply support for IRFZ10PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability across industrial and automotive markets.
The IRFZ10PBF belongs to Vishay's third-generation power MOSFET family, engineered for cost-effective, high-reliability switching in commercial and industrial power systems where avalanche capability and temperature resilience are essential.
FAQ
What is the maximum continuous drain current for IRFZ10PBF at 100 °C case temperature?
The IRFZ10PBF supports 7.2 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 10 A rating at 25 °C, based on a linear derating factor of 0.29 W/°C and RthJC = 3.5 °C/W. Designers must verify heatsink performance to maintain TC ≤ 100 °C under full load to sustain this current in the IRFZ10PBF.
Does IRFZ10PBF have avalanche capability, and how is it rated?
Yes, the IRFZ10PBF is rated for single-pulse unclamped inductive switching with EAS = 47 mJ under test conditions of VDD = 25 V, IAS = 7.2 A, L = 1.8 mH, and Rg = 25 Ω. This ruggedness enables reliable operation in flyback, buck-boost, and motor drive circuits without external avalanche clamps - a key differentiator confirmed in the datasheet's Fig. 12c and Absolute Maximum Ratings section for the IRFZ10PBF.
What is the gate threshold voltage range for IRFZ10PBF, and how does it affect drive compatibility?
The IRFZ10PBF has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 μA. This allows reliable turn-on with standard 5 V logic outputs and full enhancement with 10 V gate drive. Unlike logic-level MOSFETs, it is not optimized for 3.3 V microcontroller direct drive; a gate driver or level shifter is recommended for robust operation below 4.5 V, as verified in the Specifications table for the IRFZ10PBF.
Can IRFZ10PBF be used in parallel configurations, and what design considerations apply?
Yes, the IRFZ10PBF is designed for easy paralleling due to its positive temperature coefficient of RDS(on), which promotes inherent current sharing as junction temperature rises. To ensure balance, use matched gate resistors (≤ 1 Ω difference), symmetrical PCB layout with equal trace lengths, and common-source routing. These practices are validated in Vishay's application guidance and directly supported by the "Ease of paralleling" feature listed in the IRFZ10PBF datasheet.
What is the body diode reverse recovery performance of IRFZ10PBF, and why does it matter?
The IRFZ10PBF body diode exhibits trr = 70–140 ns and Qrr = 0.20–0.40 μC at TJ = 25 °C, IF = 10 A, and di/dt = 100 A/μs. These values impact efficiency and EMI in synchronous rectification and freewheeling paths. Lower Qrr reduces switching loss and voltage overshoot during diode turn-off - a critical parameter confirmed in the "Drain-Source Body Diode Characteristics" section of the IRFZ10PBF datasheet.
IRFZ10PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 200mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 43W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFZ10PBF FAQ
1.How can I place an order for IRFZ10PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ10PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ10PBF reliable?
The price and inventory of IRFZ10PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ10PBF is usually 5 days.
3.What payment methods are accepted for IRFZ10PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ10PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ10PBF?
IRFZ10PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ10PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ10PBF?
For technical support, including IRFZ10PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ10PBF requirements.
6.How does Aetrix verify that IRFZ10PBF is sourced from the original manufacturer or authorized distributors?
All IRFZ10PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ10PBF meets industry standards.
7.What is the process for return or replacement of IRFZ10PBF?
All IRFZ10PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ10PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ10PBF part is unused and in its original packaging.
Return procedure for IRFZ10PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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